FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

Alles zurücksetzen
Alle anwenden
Ergebnis

FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
2SJ557-T1B-A

2SJ557-T1B-A

SMALL SIGNAL P-CHANNEL MOSFET

Renesas Electronics Corporation

177,000 -
RFQ
2SJ557-T1B-A

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
FQD7N10TM

FQD7N10TM

MOSFET N-CH 100V 5.8A DPAK

Fairchild Semiconductor

173,355 -
RFQ
FQD7N10TM

Datenblatt

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 100 V 5.8A (Tc) 10V 350mOhm @ 2.9A, 10V 4V @ 250µA 7.5 nC @ 10 V ±25V 250 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
FDV045P20L

FDV045P20L

MOSFET P-CH 20V 1.15A SOT23-3

onsemi

7,262 -
RFQ
FDV045P20L

Datenblatt

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 1.15A (Ta) 1.8V, 4.5V 108mOhm @ 1.15A, 4.5V 1.5V @ 250µA 10 nC @ 4.5 V ±8V 1220 pF @ 10 V - 1.6W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
RJK03B8DPA-00#J53

RJK03B8DPA-00#J53

MOSFET N-CH 30V 30A 8WPAK

Renesas Electronics Corporation

114,786 -
RFQ
RJK03B8DPA-00#J53

Datenblatt

- 8-PowerWDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta) - 9.3mOhm @ 15A, 10V - 9 nC @ 4.5 V - 1330 pF @ 10 V - 28W (Tc) - - - Surface Mount 8-WPAK
RJK0397DPA-00#J53

RJK0397DPA-00#J53

MOSFET N-CH 30V 30A 8WPAK

Renesas Electronics Corporation

113,485 -
RFQ
RJK0397DPA-00#J53

Datenblatt

- 8-PowerWDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta) - 10.1mOhm @ 15A, 10V - 7.4 nC @ 4.5 V - 1110 pF @ 10 V - 25W (Tc) - - - Surface Mount 8-WPAK
NDF10N60ZH

NDF10N60ZH

MOSFET N-CH 600V 10A TO220FP

onsemi

2,182 -
RFQ
NDF10N60ZH

Datenblatt

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 750mOhm @ 5A, 10V 4.5V @ 100µA 68 nC @ 10 V ±30V 1645 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-2 Full Pack
2SK3617-S-TL-E

2SK3617-S-TL-E

NCH 4V DRIVE SERIES

onsemi

60,200 -
RFQ
2SK3617-S-TL-E

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
FDJ127P

FDJ127P

MOSFET P-CH 20V 4.1A SC75-6 FLMP

Fairchild Semiconductor

42,459 -
RFQ
FDJ127P

Datenblatt

PowerTrench® SC-75-6 FLMP Bulk Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.1A (Ta) 1.8V, 4.5V 60mOhm @ 4.1A, 4.5V 1.5V @ 250µA 10 nC @ 4.5 V ±8V 780 pF @ 10 V - 1.6W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SC75-6 FLMP
NTMS4700NR2

NTMS4700NR2

MOSFET N-CH 30V 8.6A 8SOIC

onsemi

3,127 -
RFQ
NTMS4700NR2

Datenblatt

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.6A (Ta) 4.5V, 10V 7.2mOhm @ 13A, 10V 3V @ 250µA 24 nC @ 4.5 V ±20V 1600 pF @ 24 V - 860mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
FQD5N50TF

FQD5N50TF

MOSFET N-CH 500V 3.5A DPAK

Fairchild Semiconductor

28,688 -
RFQ
FQD5N50TF

Datenblatt

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 500 V 3.5A (Tc) 10V 1.8Ohm @ 1.75A, 10V 5V @ 250µA 17 nC @ 10 V ±30V 610 pF @ 25 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
BUZ100S-E3045A

BUZ100S-E3045A

N-CHANNEL POWER MOSFET

Infineon Technologies

28,500 -
RFQ
BUZ100S-E3045A

Datenblatt

- - Bulk Active - - - - - - - - - - - - - - - - -
NTTFS3A08PZTWG

NTTFS3A08PZTWG

MOSFET P-CH 20V 9A 8WDFN

onsemi

7,088 -
RFQ
NTTFS3A08PZTWG

Datenblatt

- 8-PowerWDFN Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 9A (Ta) 2.5V, 4.5V 6.7mOhm @ 12A, 4.5V 1V @ 250µA 56 nC @ 4.5 V ±8V 5000 pF @ 10 V - 840mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-WDFN (3.3x3.3)
2SK2260-O-TD-E

2SK2260-O-TD-E

NCH 10V DRIVE SERIES

onsemi

23,000 -
RFQ
2SK2260-O-TD-E

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
IPF05N03LAG

IPF05N03LAG

N-CHANNEL POWER MOSFET

Infineon Technologies

22,500 -
RFQ
IPF05N03LAG

Datenblatt

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 25 V 50A (Tc) 4.5V, 10V 5.1mOhm @ 30A, 10V 2V @ 50µA 25 nC @ 5 V ±20V 3110 pF @ 15 V - 94W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-23
FQU3N60TU

FQU3N60TU

MOSFET N-CH 600V 2.4A IPAK

Fairchild Semiconductor

21,754 -
RFQ
FQU3N60TU

Datenblatt

QFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.4A (Tc) 10V 3.6Ohm @ 1.2A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 450 pF @ 25 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
RJK03B9DPA-00#J53

RJK03B9DPA-00#J53

MOSFET N-CH 30V 30A 8WPAK

Renesas Electronics Corporation

21,000 -
RFQ
RJK03B9DPA-00#J53

Datenblatt

- 8-PowerWDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta) - 10.6mOhm @ 15A, 10V - 7.4 nC @ 4.5 V - 1110 pF @ 10 V - 25W (Tc) 150°C (TJ) - - Surface Mount 8-WPAK
HUF76113T3ST

HUF76113T3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

19,318 -
RFQ
HUF76113T3ST

Datenblatt

- TO-261-4, TO-261AA Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 4.7A (Ta) 4.5V, 10V 31mOhm @ 4.7A, 10V 3V @ 250µA 20.5 nC @ 10 V ±20V 625 pF @ 25 V - 1.1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223-4
BSP299L6327HUSA1

BSP299L6327HUSA1

MOSFET N-CH 500V 400MA SOT223-4

Infineon Technologies

8,061 -
RFQ
BSP299L6327HUSA1

Datenblatt

SIPMOS® TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 500 V 400mA (Ta) 10V 4Ohm @ 400mA, 10V 4V @ 1mA - ±20V 400 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT223-4-21
FDPF680N10T

FDPF680N10T

MOSFET N-CH 100V 12A TO220F

onsemi

9,042 -
RFQ
FDPF680N10T

Datenblatt

PowerTrench® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 12A (Tc) 10V 68mOhm @ 6A, 10V 4.5V @ 250µA 17 nC @ 10 V ±20V 1000 pF @ 50 V - 24W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
RJK03B7DPA-00#J53

RJK03B7DPA-00#J53

MOSFET N-CH 30V 30A 8WPAK

Renesas Electronics Corporation

12,000 -
RFQ
RJK03B7DPA-00#J53

Datenblatt

- 8-PowerWDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta) - 7.8mOhm @ 15A, 10V - 11 nC @ 4.5 V - 1670 pF @ 10 V - 30W (Tc) - - - Surface Mount 8-WPAK
Total 36284 Record«Prev1... 433434435436437438439440...1815Next»
TomatoElec

Suche

TomatoElec

Produkte

TomatoElec

Telefon

TomatoElec

Benutzer