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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    RQA0005AQS#H1

    RQA0005AQS#H1

    RQA0005 - N-CHANNEL POWER MOSFET

    Renesas

    		 5,436 -
    RFQ
    		RQA0005AQS#H1

    Datenblatt

         		- - Bulk Obsolete - - - - - - - - - - - - - - - - -
    IRFU1010ZPBF

    IRFU1010ZPBF

    MOSFET N-CH 55V 42A IPAK

    International Rectifier

    		 4,825 -
    RFQ
    		IRFU1010ZPBF

    Datenblatt

         		HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 7.5mOhm @ 42A, 10V 4V @ 100µA 95 nC @ 10 V ±20V 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK (TO-251AA)
    G01N20LE

    G01N20LE

    N200V,RD(MAX)<850M@10V,RD(MAX)<9

    Goford Semiconductor

    		 4,704 -
    RFQ
    		G01N20LE

    Datenblatt

         		TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 1.7A (Tc) 4.5V, 10V 700mOhm @ 1A, 10V 2.5V @ 250µA 12 nC @ 10 V ±20V 580 pF @ 25 V - 1.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
    GSFD4N65

    GSFD4N65

    MOSFET, N-CH, SINGLE, 4.00A, 650

    Good-Ark Semiconductor

    		 4,210 -
    RFQ
    		GSFD4N65

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 4A (Tc) 10V 2.7Ohm @ 2A, 10V 4V @ 250µA 12.5 nC @ 10 V ±30V 430 pF @ 25 V - 77W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    HUF75829D3

    HUF75829D3

    MOSFET N-CH 150V 18A IPAK

    Fairchild Semiconductor

    		 4,067 -
    RFQ
    		HUF75829D3

    Datenblatt

         		UltraFET™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 150 V 18A (Tc) 10V 110mOhm @ 18A, 10V 4V @ 250µA 70 nC @ 20 V ±20V 1080 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    FSS273-TL-E-SY

    FSS273-TL-E-SY

    MOSFET N-CH

    Sanyo

    		 4,000 -
    RFQ

    -

    		 * - Bulk Active - - - - - - - - - - - - - - - - -
    HUF76437S3S

    HUF76437S3S

    MOSFET N-CH 60V 71A D2PAK

    Fairchild Semiconductor

    		 3,205 -
    RFQ
    		HUF76437S3S

    Datenblatt

         		UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 71A (Tc) 4.5V, 10V 14mOhm @ 71A, 10V 3V @ 250µA 71 nC @ 10 V ±16V 2230 pF @ 25 V - 155W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
    PJS6403_S1_00001

    PJS6403_S1_00001

    30V P-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 3,000 -
    RFQ
    		PJS6403_S1_00001

    Datenblatt

         		- SOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 6.4A (Ta) 4.5V, 10V 32mOhm @ 4A, 10V 2.5V @ 250µA 7.8 nC @ 4.5 V ±20V 870 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6
    SFM9014TF

    SFM9014TF

    MOSFET P-CH 60V 1.8A SOT223-4

    Fairchild Semiconductor

    		 2,900 -
    RFQ
    		SFM9014TF

    Datenblatt

         		- TO-261-4, TO-261AA Bulk Obsolete P-Channel MOSFET (Metal Oxide) 60 V 1.8A (Ta) 10V 500mOhm @ 900mA, 10V 4V @ 250µA 11 nC @ 10 V ±30V 350 pF @ 25 V - 2.8W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223-4
    FSS273-TL-E

    FSS273-TL-E

    N-CHANNEL MOSFET

    onsemi

    		 2,000 -
    RFQ

    -

    		 - 8-SOIC (0.173", 4.40mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 45 V 8A (Ta) - 22mOhm @ 8A, 10V - 40 nC @ 10 V - 2225 pF @ 20 V - 2.4W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
    ZVN3320ASTOA

    ZVN3320ASTOA

    MOSFET N-CH 200V 0.1A TO92-3

    Diodes Incorporated

    		 1,427 -
    RFQ

    -

    		 * - Cut Tape (CT) Obsolete - - - - - - - - - - - - - - - - -
    PHK31NQ03LT,518

    PHK31NQ03LT,518

    NEXPERIA PHK31NQ03LT - 30.4A, 30

    NXP Semiconductors

    		 85,693 -
    RFQ
    		PHK31NQ03LT,518

    Datenblatt

         		TrenchMOS™ 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 30.4A (Tc) 4.5V, 10V 4.4mOhm @ 25A, 10V 2.15V @ 1mA 33 nC @ 4.5 V ±20V 4235 pF @ 12 V - 6.9W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    FQPF7N65CYDTU

    FQPF7N65CYDTU

    MOSFET N-CH 650V 7A TO220F-3

    onsemi

    		 5,995 -
    RFQ
    		FQPF7N65CYDTU

    Datenblatt

         		QFET® TO-220-3 Full Pack, Formed Leads Tube Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 1.4Ohm @ 3.5A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 1245 pF @ 25 V - 52W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3 (Y-Forming)
    FQPF5P20

    FQPF5P20

    MOSFET P-CH 200V 3.4A TO220F

    onsemi

    		 9,747 -
    RFQ
    		FQPF5P20

    Datenblatt

         		QFET® TO-220-3 Full Pack Bulk Obsolete P-Channel MOSFET (Metal Oxide) 200 V 3.4A (Tc) 10V 1.4Ohm @ 1.7A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 430 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    CPH3355-TL-W

    CPH3355-TL-W

    MOSFET P-CH 30V 2.5A 3CPH

    onsemi

    		 4,751 -
    RFQ

    -

    		 - TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 2.5A (Ta) 4V, 10V 156mOhm @ 1A, 10V 2.6V @ 1mA 3.9 nC @ 10 V ±20V 172 pF @ 10 V - 1W (Ta) 150°C (TJ) - - Surface Mount 3-CPH
    NVD4804NT4G

    NVD4804NT4G

    MOSFET N-CH 30V 14.5A/124A DPAK

    onsemi

    		 8,514 -
    RFQ
    		NVD4804NT4G

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14.5A (Ta), 124A (Tc) 4.5V, 11.5V 4mOhm @ 30A, 11.5V 2.5V @ 250µA 40 nC @ 4.5 V ±20V 4490 pF @ 12 V - 1.43W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK
    PJS6413_S1_00001

    PJS6413_S1_00001

    20V P-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 10,565 -
    RFQ
    		PJS6413_S1_00001

    Datenblatt

         		- SOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 4.4A (Ta) 1.8V, 4.5V 82mOhm @ 4.4A, 4.5V 1.2V @ 250µA 7 nC @ 10 V ±12V 522 pF @ 10 V - 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6
    NTLUS4C16NTBG

    NTLUS4C16NTBG

    MOSFET N-CH 30V 6.1A 6UDFN

    onsemi

    		 2,317 -
    RFQ

    -

    		 µCool™ 6-PowerUFDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6.1A (Ta) 1.8V, 10V 11.4mOhm @ 8A, 10V 1.1V @ 250µA 7.5 nC @ 4.5 V ±12V 690 pF @ 15 V - 650mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-UDFN (1.6x1.6)
    SSFL6912

    SSFL6912

    MOSFET, N-CH, SINGLE, 5A, 60V, S

    Good-Ark Semiconductor

    		 10,050 -
    RFQ
    		SSFL6912

    Datenblatt

         		- TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 5A (Ta) 4.5V, 10V 75mOhm @ 5A, 10V 2.5V @ 250µA 8 nC @ 10 V ±20V 540 pF @ 30 V - 1.79W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
    RJK1028DSP-00#J5

    RJK1028DSP-00#J5

    N-CHANNEL POWER MOSFET

    Renesas Electronics Corporation

    		 7,350 -
    RFQ
    		RJK1028DSP-00#J5

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
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