TomatoElecBestellverfolgung TomatoElecMein Konto
    Beliebte Suche DS2401X1#U GRM188R61E105KA12D AP7340D-18FS4-7 CMPA601C025F CGHV96100F2 CGHV96130F AP3012KTR-E1 SMBJ43A-13-F DMN4034SSS-13 FMMT495QTA
    TomatoElec

    Verfügbar 24/7 unter

    0755-82798135
    TomatoElec TomatoElec
    Alle Kategorien
    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

    Alles zurücksetzen
    Alle anwenden
    Ergebnis

    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    SI2310A

    SI2310A

    60V 3A 90MR@10V,3A 1.38W 3V@250A

    UMW

    		 2,580 -
    RFQ
    		SI2310A

    Datenblatt

         		UMW TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 60 V 3A (Ta) 4.5V, 10V 80mOhm @ 3A, 10V 3V @ 250µA 10 nC @ 4.5 V ±20V 780 pF @ 25 V - 1.38W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
    AM1922NE

    AM1922NE

    MOSFET N-CH 20V 1.5A SC70-6

    Analog Power Inc.

    		 2,495 -
    RFQ
    		AM1922NE

    Datenblatt

         		- 6-TSSOP, SC-88, SOT-363 Bulk Active N-Channel MOSFET (Metal Oxide) 20 V 1.6A (Ta) 2.5V, 4.5V 88mOhm @ 1.6A, 4.5V 300mV @ 250µA 1 nC @ 5 V 8V - - 300mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SC-70-6
    BS170-D75Z

    BS170-D75Z

    MOSFET N-CH 60V 500MA TO92-3

    onsemi

    		 1,786 -
    RFQ
    		BS170-D75Z

    Datenblatt

         		- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 60 V 500mA (Ta) 10V 5Ohm @ 200mA, 10V 3V @ 1mA - ±20V 40 pF @ 10 V - 830mW (Ta) -55°C ~ 150°C (TJ) - - Through Hole TO-92-3
    NTB18N06G

    NTB18N06G

    MOSFET N-CH 60V 15A D2PAK

    onsemi

    		 8,596 -
    RFQ
    		NTB18N06G

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 15A (Tc) 10V 90mOhm @ 7.5A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 450 pF @ 25 V - 48.4W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    IPI084N06L3GXKSA1

    IPI084N06L3GXKSA1

    MOSFET N-CH 60V 50A TO262-3

    Infineon Technologies

    		 6,054 -
    RFQ
    		IPI084N06L3GXKSA1

    Datenblatt

         		OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 8.4mOhm @ 50A, 10V 2.2V @ 34µA 29 nC @ 4.5 V ±20V 4900 pF @ 30 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3-1
    NDF08N50ZG

    NDF08N50ZG

    MOSFET N-CH 500V 8.5A TO220FP

    onsemi

    		 2,485 -
    RFQ
    		NDF08N50ZG

    Datenblatt

         		- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 8.5A (Tc) 10V 850mOhm @ 3.6A, 10V 4.5V @ 100µA 46 nC @ 10 V ±30V 1095 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    UPA2450CTL(1)-E1-A

    UPA2450CTL(1)-E1-A

    SMALL SIGNAL N-CHANNEL MOSFET

    Renesas Electronics Corporation

    		 318,000 -
    RFQ
    		UPA2450CTL(1)-E1-A

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    FQU2N90TU

    FQU2N90TU

    MOSFET N-CH 900V 1.7A IPAK

    Fairchild Semiconductor

    		 223,140 -
    RFQ
    		FQU2N90TU

    Datenblatt

         		QFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 900 V 1.7A (Tc) 10V 7.2Ohm @ 850mA, 10V 5V @ 250µA 15 nC @ 10 V ±30V 500 pF @ 25 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
    FDMS0352S

    FDMS0352S

    POWER FIELD-EFFECT TRANSISTOR

    Fairchild Semiconductor

    		 182,000 -
    RFQ
    		FDMS0352S

    Datenblatt

         		PowerTrench® 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 26A (Ta), 42A (Tc) 4.5V, 10V 2.4mOhm @ 25A, 10V 3V @ 1mA 90 nC @ 10 V ±20V 6120 pF @ 15 V - 2.5W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6), Power56
    FSS275-TL-E

    FSS275-TL-E

    MOSFET N-CH 60V 6A 8SOP

    onsemi

    		 176,988 -
    RFQ
    		FSS275-TL-E

    Datenblatt

         		- 8-SOIC (0.173", 4.40mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 6A (Ta) - 43mOhm @ 3A, 10V - 21 nC @ 10 V - 1100 pF @ 20 V - 1.9W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
    FDD6035AL

    FDD6035AL

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 152,926 -
    RFQ
    		FDD6035AL

    Datenblatt

         		PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta), 46A (Tc) 4.5V, 10V 12mOhm @ 12A, 10V 3V @ 250µA 18 nC @ 5 V ±20V 1230 pF @ 15 V - 1.5W (Ta), 56W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
    2SK4098FS

    2SK4098FS

    MOSFET N-CH 600V 6A TO220F-3FS

    onsemi

    		 8,262 -
    RFQ
    		2SK4098FS

    Datenblatt

         		- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 10V 1.1Ohm @ 3.5A, 10V - 23.5 nC @ 10 V ±30V 600 pF @ 30 V - 2W 150°C - - Through Hole TO-220F-3FS
    FSS275-TL-E-SA

    FSS275-TL-E-SA

    MOSFET N-CH

    Sanyo

    		 66,000 -
    RFQ

    -

    		 * - Bulk Active - - - - - - - - - - - - - - - - -
    MTA15N06

    MTA15N06

    N-CHANNEL POWER MOSFET

    onsemi

    		 33,266 -
    RFQ
    		MTA15N06

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    FDS6680S

    FDS6680S

    MOSFET N-CH 30V 11.5A 8SOIC

    Fairchild Semiconductor

    		 30,138 -
    RFQ
    		FDS6680S

    Datenblatt

         		PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11.5A (Ta) 4.5V, 10V 11mOhm @ 11.5A, 10V 3V @ 250µA 24 nC @ 5 V ±20V 2010 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    FDP8880

    FDP8880

    POWER FIELD-EFFECT TRANSISTOR, 1

    Fairchild Semiconductor

    		 28,800 -
    RFQ
    		FDP8880

    Datenblatt

         		PowerTrench® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta), 54A (Tc) 4.5V, 10V 11.6mOhm @ 40A, 10V 2.5V @ 250µA 29 nC @ 10 V ±20V 1240 pF @ 15 V - 55W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
    HUF76409D3ST

    HUF76409D3ST

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 26,462 -
    RFQ
    		HUF76409D3ST

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 4.5V, 10V 63mOhm @ 18A, 10V 3V @ 250µA 15 nC @ 10 V ±16V 485 pF @ 25 V - 49W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
    FDD6780A

    FDD6780A

    16.4A, 25V, 0.0086OHM, N-CHANNEL

    Fairchild Semiconductor

    		 26,410 -
    RFQ
    		FDD6780A

    Datenblatt

         		PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 25 V 16.4A (Ta), 30A (Tc) 4.5V, 10V 8.6mOhm @ 16.4A, 10V 3V @ 250µA 24 nC @ 10 V ±20V 1235 pF @ 13 V - 3.7W (Ta), 32.6W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
    FDS9400A

    FDS9400A

    MOSFET P-CH 30V 3.4A 8SOIC

    Fairchild Semiconductor

    		 26,104 -
    RFQ
    		FDS9400A

    Datenblatt

         		PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active P-Channel MOSFET (Metal Oxide) 30 V 3.4A (Ta) 4.5V, 10V 130mOhm @ 1A, 10V 3V @ 250µA 3.5 nC @ 5 V ±25V 205 pF @ 15 V - 2.5W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount 8-SOIC
    BSC882N03MSG

    BSC882N03MSG

    N-CHANNEL POWER MOSFET

    Infineon Technologies

    		 23,996 -
    RFQ
    		BSC882N03MSG

    Datenblatt

         		OptiMOS™ 3 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 34 V 22A (Ta), 100A (Tc) 4.5V, 10V 2.6mOhm @ 30A, 10V 2V @ 250µA 55 nC @ 10 V ±20V 4300 pF @ 15 V - 2.5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TSDSON-8
    Total 36284 Record«Prev1... 428429430431432433434435...1815Next»
    TomatoElec

    Suche

     TomatoElec

    Produkte

     TomatoElec

    Telefon

     TomatoElec

    Benutzer
    TomatoElec
    [email protected]
    0755-82798135