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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    RJK0366DSP-00#J0

    RJK0366DSP-00#J0

    MOSFET N-CH 30V 11A 8SOP

    Renesas Electronics Corporation

    		 22,500 -
    RFQ
    		RJK0366DSP-00#J0

    Datenblatt

         		- 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) - 11.7mOhm @ 5.5A, 10V - 6.8 nC @ 4.5 V - 1010 pF @ 10 V - - - - - Surface Mount 8-SOP
    FQU10N20TU

    FQU10N20TU

    MOSFET N-CH 200V 7.6A IPAK

    Fairchild Semiconductor

    		 21,774 -
    RFQ
    		FQU10N20TU

    Datenblatt

         		QFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 200 V 7.6A (Tc) 10V 360mOhm @ 3.8A, 10V 5V @ 250µA 18 nC @ 10 V ±30V 670 pF @ 25 V - 2.5W (Ta), 51W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
    GSFR0603

    GSFR0603

    MOSFET, P-CH, SINGLE, -3.3A, -60

    Good-Ark Semiconductor

    		 12,855 -
    RFQ
    		GSFR0603

    Datenblatt

         		- SOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 3.3A (Ta) 4.5V, 10V 96mOhm @ 2A, 10V 2.5V @ 250µA 15 nC @ 10 V ±20V 1080 pF @ 30 V - 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6L
    HUF76633S3ST

    HUF76633S3ST

    MOSFET N-CH 100V 39A D2PAK

    Fairchild Semiconductor

    		 12,500 -
    RFQ
    		HUF76633S3ST

    Datenblatt

         		UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 100 V 39A (Tc) 4.5V, 10V 35mOhm @ 39A, 10V 3V @ 250µA 67 nC @ 10 V ±16V 1820 pF @ 25 V - 145W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
    NTMFS4C58NT1G

    NTMFS4C58NT1G

    MOSFET N-CH 30V 52A 5DFN

    onsemi

    		 10,500 -
    RFQ

    -

    		 - 8-PowerTDFN, 5 Leads Bulk Obsolete - - - - - - - - - - - - - - - Surface Mount 5-DFN (5x6) (8-SOFL)
    NTP85N03G

    NTP85N03G

    MOSFET N-CH 28V 85A TO220AB

    onsemi

    		 6,810 -
    RFQ
    		NTP85N03G

    Datenblatt

         		- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 28 V 85A (Tc) 4.5V, 10V 6.8mOhm @ 40A, 10V 3V @ 250µA 29 nC @ 4.5 V ±20V 2150 pF @ 24 V - 80W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    IRF711

    IRF711

    N-CHANNEL POWER MOSFET

    Harris Corporation

    		 6,031 -
    RFQ
    		IRF711

    Datenblatt

         		- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 350 V 2A (Tc) 10V 3.6Ohm @ 1.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 135 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    IRFS634B_FP001

    IRFS634B_FP001

    MOSFET N-CH 250V 8.1A TO220F

    Fairchild Semiconductor

    		 6,000 -
    RFQ
    		IRFS634B_FP001

    Datenblatt

         		- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 8.1A (Tc) 10V 450mOhm @ 4.05A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1000 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    SSFL0954

    SSFL0954

    MOSFET, N-CH, SINGLE, 1.7A, 100V

    Good-Ark Semiconductor

    		 6,000 -
    RFQ
    		SSFL0954

    Datenblatt

         		- TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 1.7A (Tc) 4.5V, 10V 310mOhm @ 1A, 10V 2.5V @ 250µA 18 nC @ 10 V ±20V 800 pF @ 25 V - 1.76W (Tc) -50°C ~ 150°C (TJ) - - Surface Mount SOT-223
    RFD7N10LE

    RFD7N10LE

    N-CHANNEL POWER MOSFET

    Harris Corporation

    		 5,942 -
    RFQ
    		RFD7N10LE

    Datenblatt

         		- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 7A (Tc) 5V 300mOhm @ 7A, 5V 2V @ 250µA 150 nC @ 10 V +10V, -8V 360 pF @ 25 V - 47W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
    HUF76121S3ST

    HUF76121S3ST

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 4,000 -
    RFQ
    		HUF76121S3ST

    Datenblatt

         		UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 47A (Tc) 4.5V, 10V 21mOhm @ 47A, 10V 3V @ 250µA 30 nC @ 10 V ±20V 850 pF @ 25 V - 75W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    HUF76413D3

    HUF76413D3

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 3,600 -
    RFQ
    		HUF76413D3

    Datenblatt

         		UltraFET® TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 4.5V, 10V 49mOhm @ 20A, 10V 3V @ 250µA 20 nC @ 10 V ±16V 645 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    ZXMN2AM832TA

    ZXMN2AM832TA

    MOSFET 2N-CH 20V 2.9A 8MLP

    Diodes Incorporated

    		 3,302 -
    RFQ

    -

    		 * - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    FQU4N25TU

    FQU4N25TU

    MOSFET N-CH 250V 3A IPAK

    Fairchild Semiconductor

    		 3,247 -
    RFQ
    		FQU4N25TU

    Datenblatt

         		QFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 250 V 3A (Tc) 10V 1.75Ohm @ 1.5A, 10V 5V @ 250µA 5.6 nC @ 10 V ±30V 200 pF @ 25 V - 2.5W (Ta), 37W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
    2SK3105-T1B-A

    2SK3105-T1B-A

    SMALL SIGNAL FET

    Renesas Electronics Corporation

    		 3,000 -
    RFQ
    		2SK3105-T1B-A

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    G220P02D2

    G220P02D2

    P-20V,-8A,RD(MAX)<[email protected],VTH-

    Goford Semiconductor

    		 2,965 -
    RFQ
    		G220P02D2

    Datenblatt

         		TrenchFET® 6-UDFN Exposed Pad Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 20 V 8A (Tc) 4.5V, 10V 20mOhm @ 6A, 10V 1.2V @ 250µA 14 nC @ 10 V ±12V 1873 pF @ 10 V - 3.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 6-DFN (2x2)
    IRLML9303TR

    IRLML9303TR

    MOSFET P-CH 30V 2.3A SOT23

    UMW

    		 2,876 -
    RFQ
    		IRLML9303TR

    Datenblatt

         		* TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 30 V 2.3A (Ta) 4.5V, 10V 165mOhm @ 2.3A, 10V 2.4V @ 10µA - ±20V - - 1.25W (Ta) -55°C ~ 155°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
    BSS308PE

    BSS308PE

    MOSFET P-CH 30V 2A SOT23

    UMW

    		 2,750 -
    RFQ
    		BSS308PE

    Datenblatt

         		* TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 30 V 2A (Ta) 4.5V, 10V 80mOhm @ 2A, 10V 2V @ 11µA - ±20V - - 500mW (Ta) -55°C ~ 155°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
    G7K2N20LLE

    G7K2N20LLE

    N-PH,200V, ESD,2A,RD<0.7@10V,VTH

    Goford Semiconductor

    		 2,648 -
    RFQ
    		G7K2N20LLE

    Datenblatt

         		TrenchFET® SOT-23-6 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 200 V 2A (Tc) 4.5V, 10V 700mOhm @ 1A, 10V 2.5V @ 250µA 11 nC @ 10 V ±20V 531 pF @ 100 V - 1.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6L
    IRFS640A

    IRFS640A

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 2,576 -
    RFQ
    		IRFS640A

    Datenblatt

         		- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 9.8A (Tc) 10V 180mOhm @ 4.9A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 1500 pF @ 25 V - 43W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
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