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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    SFR9024TF

    SFR9024TF

    P-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 1,750 -
    RFQ
    		SFR9024TF

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active P-Channel MOSFET (Metal Oxide) 60 V 7.8A (Tc) 10V 280mOhm @ 3.9A, 10V 4V @ 250µA 19 nC @ 10 V ±30V 600 pF @ 25 V - 2.5W (Ta), 32W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    NTMFS4983NBFT1G

    NTMFS4983NBFT1G

    MOSFET N-CH 30V 22A/106A 5DFN

    onsemi

    		 3,597 -
    RFQ

    -

    		 * - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
    NTMS4939NR2G

    NTMS4939NR2G

    MOSFET N-CH 30V 8A 8SOIC

    onsemi

    		 5,856 -
    RFQ
    		NTMS4939NR2G

    Datenblatt

         		- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8A (Ta) 4.5V, 10V 8.4mOhm @ 7.5A, 10V 2.5V @ 250µA 25 nC @ 10 V ±20V 2000 pF @ 25 V - 800mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    RJK03B9DNS-00#J5

    RJK03B9DNS-00#J5

    N-CHANNEL POWER MOSFET

    Renesas Electronics Corporation

    		 175,000 -
    RFQ

    -

    		 * - Bulk Active - - - - - - - - - - - - - - - - -
    RJK0368DPA-00#J0

    RJK0368DPA-00#J0

    MOSFET N-CH 30V 20A 8WPAK

    Renesas Electronics Corporation

    		 61,026 -
    RFQ
    		RJK0368DPA-00#J0

    Datenblatt

         		- 8-PowerWDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 20A (Ta) - 14.3mOhm @ 10A, 10V 2.5V @ 1mA 6.2 nC @ 4.5 V - 730 pF @ 10 V - 25W (Tc) 150°C (TJ) - - Surface Mount 8-WPAK
    SPP02N60C3XKSA1

    SPP02N60C3XKSA1

    LOW POWER_LEGACY

    Infineon Technologies

    		 8,488 -
    RFQ
    		SPP02N60C3XKSA1

    Datenblatt

         		CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 1.8A (Tc) 10V 3Ohm @ 1.1A, 10V 3.9V @ 80µA 12.5 nC @ 10 V ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
    UPA2593T1H-T1-AT

    UPA2593T1H-T1-AT

    N-CHANNEL POWER MOSFET

    Renesas Electronics Corporation

    		 19,183 -
    RFQ
    		UPA2593T1H-T1-AT

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    FDU5N50NZTU

    FDU5N50NZTU

    MOSFET N-CH 500V 4A DPAK3

    onsemi

    		 6,871 -
    RFQ
    		FDU5N50NZTU

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 500 V 4A (Tc) 10V 1.5Ohm @ 2A, 10V 5V @ 250µA 12 nC @ 10 V ±25V 440 pF @ 25 V - 62W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251 (IPAK)
    SPB03N60C3ATMA1

    SPB03N60C3ATMA1

    MOSFET N-CH 650V 3.2A TO263-3

    Infineon Technologies

    		 6,891 -
    RFQ
    		SPB03N60C3ATMA1

    Datenblatt

         		CoolMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 650 V 3.2A (Tc) 10V 1.4Ohm @ 2A, 10V 3.9V @ 135µA 17 nC @ 10 V ±20V 400 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3-2
    03N06L

    03N06L

    N60V,RD(MAX)<100M@10V,RD(MAX)<12

    Goford Semiconductor

    		 6,330 -
    RFQ
    		03N06L

    Datenblatt

         		TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 3A (Tc) 4.5V, 10V 80mOhm @ 2A, 10V 1.2V @ 250µA 14.6 nC @ 10 V ±20V 458 pF @ 30 V - 1.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
    NTMFS4C35NT1G

    NTMFS4C35NT1G

    MOSFET N-CH 30V 12.4A 5DFN

    onsemi

    		 3,844 -
    RFQ
    		NTMFS4C35NT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12.4A (Ta) 4.5V, 10V 3.2mOhm @ 30A, 10V 2.2V @ 250µA 15 nC @ 4.5 V ±20V 2300 pF @ 15 V - 780mW (Ta), 33W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    SSF3912

    SSF3912

    MOSFET, N-CH, SINGLE, 6.5A, 30V,

    Good-Ark Semiconductor

    		 6,000 -
    RFQ
    		SSF3912

    Datenblatt

         		- SOT-23-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 6.5A (Tc) 4.5V, 10V 24mOhm @ 6A, 10V 2.5V @ 250µA 8 nC @ 4.5 V ±20V 500 pF @ 25 V - 1.56W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6L
    AMR472N

    AMR472N

    MOSFET N-CH 100V 59A DFN5X6

    Analog Power Inc.

    		 5,957 -
    RFQ
    		AMR472N

    Datenblatt

         		- 8-PowerVDFN Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 17A (Ta), 59A (Tc) 4.5V, 10V 12mOhm @ 8A, 10V 1V @ 250µA 19 nC @ 4.5 V ±20V 1213 pF @ 50 V - 5W (Ta), 63W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (5.2x5.55)
    G7P03L

    G7P03L

    P30V,RD(MAX)<23M@-10V,RD(MAX)<34

    Goford Semiconductor

    		 4,199 -
    RFQ
    		G7P03L

    Datenblatt

         		TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 7A (Tc) 4.5V, 10V 23mOhm @ 3A, 10V 2.5V @ 250µA 29 nC @ 10 V ±20V 1500 pF @ 15 V - 1.9W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
    IRLU3802PBF

    IRLU3802PBF

    HEXFET POWER MOSFET

    International Rectifier

    		 4,178 -
    RFQ
    		IRLU3802PBF

    Datenblatt

         		HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 12 V 84A (Tc) 2.8V, 4.5V 8.5mOhm @ 15A, 4.5V 1.9V @ 250µA 41 nC @ 5 V ±12V 2490 pF @ 6 V - 88W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    IRLR3802PBF

    IRLR3802PBF

    MOSFET N-CH 12V 84A DPAK

    International Rectifier

    		 3,740 -
    RFQ
    		IRLR3802PBF

    Datenblatt

         		HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 12 V 84A (Tc) - 8.5mOhm @ 15A, 4.5V 1.9V @ 250µA 41 nC @ 5 V ±12V 2490 pF @ 6 V - 88W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA
    GSFC0603

    GSFC0603

    MOSFET, P-CH, SINGLE, -3A, -60V,

    Good-Ark Semiconductor

    		 3,559 -
    RFQ
    		GSFC0603

    Datenblatt

         		- TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 60 V 3A (Ta) 4.5V, 10V 95mOhm @ 2A, 10V 2.5V @ 250µA 15 nC @ 10 V ±20V 1178 pF @ 30 V - 1.56W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
    IRFR3709ZTRRPBF

    IRFR3709ZTRRPBF

    MOSFET N-CH 30V 86A DPAK

    Infineon Technologies

    		 4,548 -
    RFQ
    		IRFR3709ZTRRPBF

    Datenblatt

         		HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 86A (Tc) 4.5V, 10V 6.5mOhm @ 15A, 10V 2.25V @ 250µA 26 nC @ 4.5 V ±20V 2330 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
    SI2308A

    SI2308A

    60V 2A 1.25W 160MR@10V,2A 3V@250

    UMW

    		 2,965 -
    RFQ
    		SI2308A

    Datenblatt

         		UMW TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 60 V 3A (Ta) 4.5V, 10V 80mOhm @ 3A, 10V 3V @ 250µA 10 nC @ 10 V ±20V 240 pF @ 25 V - 1.25W (Ta) 150°C (TJ) - - Surface Mount SOT-23
    G1002L

    G1002L

    N100V,RD(MAX)<250M@10V,VTH1.2V~2

    Goford Semiconductor

    		 2,934 -
    RFQ
    		G1002L

    Datenblatt

         		TrenchFET® TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 100 V 2A (Tc) 4.5V, 10V 250mOhm @ 2A, 10V 2V @ 250µA 10 nC @ 10 V ±20V 413 pF @ 50 V - 1.3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
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