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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    AO3401A

    AO3401A

    30V 4.1A 65MR@10V,4.2A 350MW 1.3

    UMW

    		 2,393 -
    RFQ
    		AO3401A

    Datenblatt

         		UMW TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 30 V 4.2A (Ta) 2.5V, 10V 50mOhm @ 4.2A, 10V 1.3V @ 250µA 9.4 nC @ 4.5 V ±12V 954 pF @ 15 V - 1.4W (Ta) 150°C (TJ) - - Surface Mount SOT-23
    SI6463DQ

    SI6463DQ

    P-CHANNEL MOSFET

    Fairchild Semiconductor

    		 2,350 -
    RFQ
    		SI6463DQ

    Datenblatt

         		PowerTrench® 8-TSSOP (0.173", 4.40mm Width) Bulk Active P-Channel MOSFET (Metal Oxide) 20 V 8.8A (Ta) 2.5V, 4.5V 12.5mOhm @ 8.8A, 4.5V 1.5V @ 250µA 66 nC @ 4.5 V ±12V 5045 pF @ 10 V - 600mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
    G800N06H

    G800N06H

    N60V, 3A,RD<80M@10V,VTH0.7V~1.2V

    Goford Semiconductor

    		 2,325 -
    RFQ
    		G800N06H

    Datenblatt

         		TrenchFET® TO-261-4, TO-261AA Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 60 V 3A (Tc) 4.5V, 10V 80mOhm @ 3A, 10V 1.2V @ 250µA 6 nC @ 4.5 V ±20V 457 pF @ 30 V - 1.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
    AO3400A

    AO3400A

    30V 5.8A 35MR@10V,5.8A 1.4W 1.4V

    UMW

    		 2,265 -
    RFQ
    		AO3400A

    Datenblatt

         		UMW TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 30 V 5.8A (Ta) 2.5V, 10V 28mOhm @ 5.8A, 10V 1.4V @ 250µA 12 nC @ 4.5 V ±12V 1050 pF @ 15 V - 1.4W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
    SSW2N60BTM

    SSW2N60BTM

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 2,263 -
    RFQ
    		SSW2N60BTM

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 5Ohm @ 1A, 10V 4V @ 250µA 17 nC @ 10 V ±30V 490 pF @ 25 V - 3.13W (Ta), 54W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
    HUF76121D3S

    HUF76121D3S

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 2,192 -
    RFQ
    		HUF76121D3S

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 4.5V, 10V 23mOhm @ 20A, 10V 3V @ 250µA 30 nC @ 10 V ±20V 850 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    IPD30N06S2L23ATMA1

    IPD30N06S2L23ATMA1

    MOSFET N-CH 55V 30A TO252-3

    Infineon Technologies

    		 8,384 -
    RFQ
    		IPD30N06S2L23ATMA1

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 4.5V, 10V 23mOhm @ 22A, 10V 2V @ 50µA 42 nC @ 10 V ±20V 1091 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
    NTD20N06L-001

    NTD20N06L-001

    MOSFET N-CH 60V 20A IPAK

    onsemi

    		 3,261 -
    RFQ
    		NTD20N06L-001

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 20A (Ta) 5V 48mOhm @ 10A, 5V 2V @ 250µA 32 nC @ 5 V ±15V 990 pF @ 25 V - 1.36W (Ta), 60W (Tj) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    NTD4854N-1G

    NTD4854N-1G

    MOSFET N-CH 25V 15.7A/128A IPAK

    onsemi

    		 1,800 -
    RFQ
    		NTD4854N-1G

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 25 V 15.7A (Ta), 128A (Tc) 4.5V, 10V 3.6mOhm @ 30A, 10V 2.5V @ 250µA 49.2 nC @ 4.5 V ±20V 4600 pF @ 12 V - 1.43W (Ta), 93.75W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    RFP2N12

    RFP2N12

    N-CHANNEL, MOSFET

    Harris Corporation

    		 1,550 -
    RFQ
    		RFP2N12

    Datenblatt

         		- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 120 V 2A (Tc) 10V 1.75Ohm @ 2A, 10V 4V @ 250µA - ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    IPS031N03LGAKMA1

    IPS031N03LGAKMA1

    LV POWER MOS

    Infineon Technologies

    		 5,156 -
    RFQ
    		IPS031N03LGAKMA1

    Datenblatt

         		OptiMOS™ 3 TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 3.1mOhm @ 30A, 10V 2.2V @ 250µA 51 nC @ 10 V ±20V 5300 pF @ 15 V - 94W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO251-3-11
    IRFR422

    IRFR422

    N-CHANNEL POWER MOSFET

    Harris Corporation

    		 1,139 -
    RFQ
    		IRFR422

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 2.2A (Tc) 10V 4Ohm @ 1.3A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    NTD4909NA-35G

    NTD4909NA-35G

    MOSFET N-CH 30V 8.8A/41A IPAK

    onsemi

    		 5,996 -
    RFQ

    -

    		 - TO-251-3 Stub Leads, IPAK Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.8A (Ta), 41A (Tc) - 8mOhm @ 30A, 10V 2.2V @ 250µA 17.5 nC @ 10 V - 1314 pF @ 15 V - - - - - Through Hole IPAK
    3SK222-T2-A

    3SK222-T2-A

    N-CHANNEL POWER MOSFET

    Renesas Electronics Corporation

    		 195,000 -
    RFQ
    		3SK222-T2-A

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    SSI4N60BTU

    SSI4N60BTU

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 50,126 -
    RFQ
    		SSI4N60BTU

    Datenblatt

         		- TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 2.5Ohm @ 2A, 10V 4V @ 250µA 29 nC @ 10 V ±30V 920 pF @ 25 V - 3.13W (Ta), 100W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262 (I2PAK)
    IRFR430BTF

    IRFR430BTF

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 49,950 -
    RFQ
    		IRFR430BTF

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 3.5A (Tc) 10V 1.5Ohm @ 1.75A, 10V 4V @ 250µA 33 nC @ 10 V ±30V 1050 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    HUFA75332S3ST

    HUFA75332S3ST

    MOSFET N-CH 55V 60A D2PAK

    Fairchild Semiconductor

    		 44,255 -
    RFQ
    		HUFA75332S3ST

    Datenblatt

         		UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 55 V 60A (Tc) 10V 19mOhm @ 60A, 10V 4V @ 250µA 85 nC @ 20 V ±20V 1300 pF @ 25 V - 145W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
    MTAJ3055EL

    MTAJ3055EL

    NFET T0220FP JPN

    onsemi

    		 36,786 -
    RFQ

    -

    		 * - Bulk Active - - - - - - - - - - - - - - - - -
    SS07N70AKMA1

    SS07N70AKMA1

    MOSFET N-CH

    Infineon Technologies

    		 4,514 -
    RFQ

    -

    		 - - Bulk Obsolete - - - - - - - - - - - - - - - - -
    FQP5N50C

    FQP5N50C

    MOSFET N-CH 500V 5A TO220-3

    Fairchild Semiconductor

    		 35,032 -
    RFQ
    		FQP5N50C

    Datenblatt

         		QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.4Ohm @ 2.5A, 10V 4V @ 250µA 24 nC @ 10 V ±30V 625 pF @ 25 V - 73W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
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