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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    G700P06LL

    G700P06LL

    MOSFET, P-CH,-60V,-5A,RD(MAX)<75

    Goford Semiconductor

    		 2,619 -
    RFQ
    		G700P06LL

    Datenblatt

         		TrenchFET® SOT-23-6 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 60 V 5A (Tc) 4.5V, 10V 75mOhm @ 3.2A, 10V 3V @ 250µA 15.8 nC @ 10 V ±20V 1456 pF @ 30 V - 3.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6L
    SI2305A

    SI2305A

    20V 4.2A [email protected],4.2A 1.38W 50

    UMW

    		 2,267 -
    RFQ
    		SI2305A

    Datenblatt

         		UMW TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 20 V 4.2A (Ta) 2.5V, 4.5V 40mOhm @ 4.2A, 4.5V - 10.6 nC @ 4.5 V ±12V 740 pF @ 15 V - 1.38W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
    IRF7805TRPBF

    IRF7805TRPBF

    PFET, 30V, 0.011OHM, 1OXIDE SEMI

    International Rectifier

    		 1,900 -
    RFQ
    		IRF7805TRPBF

    Datenblatt

         		HEXFET® 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V 11mOhm @ 7A, 4.5V 3V @ 250µA 31 nC @ 5 V ±12V - - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IPU80R1K2P7AKMA1

    IPU80R1K2P7AKMA1

    MOSFET N-CH 800V 4.5A TO251-3

    Infineon Technologies

    		 2,772 -
    RFQ
    		IPU80R1K2P7AKMA1

    Datenblatt

         		CoolMOS™ P7 TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 800 V 4.5A (Tc) 10V 1.2Ohm @ 1.7A, 10V 3.5V @ 80µA 11 nC @ 10 V ±20V 300 pF @ 500 V - 37W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
    IRFR3711TRLPBF

    IRFR3711TRLPBF

    HEXFET N-CHANNEL POWER MOSFET

    International Rectifier

    		 1,417 -
    RFQ
    		IRFR3711TRLPBF

    Datenblatt

         		HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 20 V 100A (Tc) 4.5V, 10V 6.5mOhm @ 15A, 10V 3V @ 250µA 44 nC @ 4.5 V ±20V 2980 pF @ 10 V - 2.5W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
    SI2301A

    SI2301A

    20V 2.8A 400MW [email protected],2A 1V@

    UMW

    		 1,303 -
    RFQ
    		SI2301A

    Datenblatt

         		UMW TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 20 V 2.8A (Ta) 2.5V, 4.5V 70mOhm @ 2.8A, 4.5V 1V @ 250µA 10 nC @ 4.5 V ±12V 405 pF @ 10 V - 400mW (Ta) 150°C (TJ) - - Surface Mount SOT-23
    FDU8880

    FDU8880

    MOSFET N-CH 30V 13A/58A IPAK

    Fairchild Semiconductor

    		 260,800 -
    RFQ
    		FDU8880

    Datenblatt

         		PowerTrench® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 58A (Tc) 4.5V, 10V 10mOhm @ 35A, 10V 2.5V @ 250µA 31 nC @ 10 V ±20V 1260 pF @ 15 V - 55W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    FDJ129P

    FDJ129P

    MOSFET P-CH 20V 4.2A SC75-6 FLMP

    Fairchild Semiconductor

    		 242,889 -
    RFQ
    		FDJ129P

    Datenblatt

         		PowerTrench® SC-75-6 FLMP Bulk Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.2A (Ta) 2.5V, 4.5V 70mOhm @ 4.2A, 4.5V 1.5V @ 250µA 6 nC @ 4.5 V ±12V 780 pF @ 10 V - 1.6W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SC75-6 FLMP
    FDS4488

    FDS4488

    0.0079A, 30V, N-CHANNEL MOSFET

    Fairchild Semiconductor

    		 117,757 -
    RFQ
    		FDS4488

    Datenblatt

         		PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 7.9A (Ta) 4.5V, 10V 22mOhm @ 7.9A, 10V 3V @ 250µA 13 nC @ 5 V ±25V 927 pF @ 15 V - 1W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount 8-SOIC
    IPS80R1K2P7AKMA1

    IPS80R1K2P7AKMA1

    MOSFET N-CH 800V 4.5A TO251-3

    Infineon Technologies

    		 3,425 -
    RFQ
    		IPS80R1K2P7AKMA1

    Datenblatt

         		CoolMOS™ P7 TO-251-3 Stub Leads, IPAK Bulk Obsolete N-Channel MOSFET (Metal Oxide) 800 V 4.5A (Tc) 10V 1.2Ohm @ 1.7A, 10V 3.5V @ 80µA 11 nC @ 10 V ±20V 300 pF @ 500 V - 37W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3-342
    FDMS8692

    FDMS8692

    MOSFET N-CH 30V 12A/28A 8PQFN

    Fairchild Semiconductor

    		 62,002 -
    RFQ
    		FDMS8692

    Datenblatt

         		PowerTrench® 8-PowerTDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta), 28A (Tc) 4.5V, 10V 9mOhm @ 12A, 10V 3V @ 250µA 21 nC @ 10 V ±20V 1265 pF @ 15 V - 2.5W (Ta), 41W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
    FDT461N

    FDT461N

    MOSFET N-CH 100V 540MA SOT223-4

    Fairchild Semiconductor

    		 47,000 -
    RFQ
    		FDT461N

    Datenblatt

         		PowerTrench® TO-261-4, TO-261AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 100 V 540mA (Ta) 4.5V, 10V 2Ohm @ 540mA, 10V 2V @ 250µA 4 nC @ 10 V ±20V 74 pF @ 25 V - 1.13W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223-4
    2SK2530-TL-E

    2SK2530-TL-E

    MOSFET N-CH 250V

    Sanyo

    		 41,300 -
    RFQ
    		2SK2530-TL-E

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    HUFA76407D3ST

    HUFA76407D3ST

    MOSFET N-CH 60V 12A TO252AA

    Fairchild Semiconductor

    		 33,519 -
    RFQ
    		HUFA76407D3ST

    Datenblatt

         		UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 12A (Tc) 4.5V, 10V 92mOhm @ 13A, 10V 3V @ 250µA 11.3 nC @ 10 V ±16V 350 pF @ 25 V - 38W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
    FQD8N25TF

    FQD8N25TF

    MOSFET N-CH 250V 6.2A DPAK

    Fairchild Semiconductor

    		 33,444 -
    RFQ
    		FQD8N25TF

    Datenblatt

         		QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 250 V 6.2A (Tc) 10V 550mOhm @ 3.1A, 10V 5V @ 250µA 15 nC @ 10 V ±30V 530 pF @ 25 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    2SJ166(1)-T1B-A

    2SJ166(1)-T1B-A

    P-CHANNEL, MOSFET

    Renesas Electronics Corporation

    		 32,196 -
    RFQ
    		2SJ166(1)-T1B-A

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    FDS6694

    FDS6694

    MOSFET N-CH 30V 12A 8SOIC

    Fairchild Semiconductor

    		 28,954 -
    RFQ
    		FDS6694

    Datenblatt

         		PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta) 4.5V, 10V 11mOhm @ 12A, 10V 3V @ 250µA 19 nC @ 5 V ±20V 1293 pF @ 15 V - 2.5W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount 8-SOIC
    2SK2530-TL-E-ON

    2SK2530-TL-E-ON

    MOSFET N-CH 250V

    onsemi

    		 27,300 -
    RFQ

    -

    		 * - Bulk Active - - - - - - - - - - - - - - - - -
    RJK03M6DNS-00#J5

    RJK03M6DNS-00#J5

    MOSFET N-CH 30V 16A 8HWSON

    Renesas Electronics Corporation

    		 25,000 -
    RFQ
    		RJK03M6DNS-00#J5

    Datenblatt

         		- 8-PowerWDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta) - 9.2mOhm @ 8A, 10V - 7.1 nC @ 4.5 V - 1190 pF @ 10 V - 12.5W (Tc) 150°C (TJ) - - Surface Mount 8-HWSON (3.3x3.3)
    HUF76139S3STK

    HUF76139S3STK

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 24,000 -
    RFQ
    		HUF76139S3STK

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 7.5mOhm @ 75A, 10V 3V @ 250µA 78 nC @ 10 V ±20V 2700 pF @ 25 V - 165W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount TO-263AB
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