FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
RLD03N06CLESM9A

RLD03N06CLESM9A

N-CHANNEL POWER MOSFET

Harris Corporation

2,500 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - - - -
FDMS5361L-F085

FDMS5361L-F085

FDMS5361 - N-CHANNEL POWERTRENCH

Fairchild Semiconductor

2,390 -
RFQ
FDMS5361L-F085

Datenblatt

PowerTrench® 8-PowerVDFN Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 35A (Tc) 4.5V, 10V 15mOhm @ 16.5A, 10V 3V @ 250µA 44 nC @ 10 V ±20V 1980 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount Power56
FQPF3N60

FQPF3N60

MOSFET N-CH 600V 2A TO220F

Fairchild Semiconductor

2,360 -
RFQ
FQPF3N60

Datenblatt

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 3.6Ohm @ 1A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 450 pF @ 25 V - 34W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
2SK1587-T1-AZ

2SK1587-T1-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

2,000 -
RFQ
2SK1587-T1-AZ

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
HUF76139S3ST

HUF76139S3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,950 -
RFQ
HUF76139S3ST

Datenblatt

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 7.5mOhm @ 75A, 10V 3V @ 250µA 78 nC @ 10 V ±20V 2700 pF @ 25 V - 165W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount TO-263AB
RFP45N02L

RFP45N02L

N-CHANNEL POWER MOSFET

Harris Corporation

1,871 -
RFQ
RFP45N02L

Datenblatt

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 20 V 45A (Tc) 5V 22mOhm @ 45A, 5V 2V @ 250µA 60 nC @ 10 V ±10V 1300 pF @ 15 V - 90W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
RFD16N02L

RFD16N02L

16A, 20V, 0.022 OHM, N-CHANNEL L

Harris Corporation

1,793 -
RFQ
RFD16N02L

Datenblatt

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 20 V 16A (Tc) 5V 22mOhm @ 16A, 5V 2V @ 250µA 60 nC @ 10 V ±10V 1300 pF @ 20 V - 90W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
IRF712S2497

IRF712S2497

1.7A, 400V, 5OHM, N-CHANNEL,

Harris Corporation

1,600 -
RFQ

-

* - Bulk Active - - - - - - - - - - - - - - - - -
FQB5N40TM

FQB5N40TM

MOSFET N-CH 400V 4.5A D2PAK

Fairchild Semiconductor

1,425 -
RFQ
FQB5N40TM

Datenblatt

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 400 V 4.5A (Tc) 10V 1.6Ohm @ 2.25A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 460 pF @ 25 V - 3.13W (Ta), 70W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
MCP87090T-U/MF

MCP87090T-U/MF

MOSFET N-CH 25V 64A 8PDFN

Microchip Technology

1,340 -
RFQ
MCP87090T-U/MF

Datenblatt

- 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 64A (Tc) 4.5V, 10V 10.5mOhm @ 10V 1.7V @ 250µA 10 nC @ 4.5 V +10V, -8V 580 pF @ 12.5 V - 2.2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-PDFN (5x6)
FQI3N30TU

FQI3N30TU

MOSFET N-CH 300V 3.2A I2PAK

Fairchild Semiconductor

1,146 -
RFQ
FQI3N30TU

Datenblatt

QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 300 V 3.2A (Tc) 10V 2.2Ohm @ 1.6A, 10V 5V @ 250µA 7 nC @ 10 V ±30V 230 pF @ 25 V - 3.13W (Ta), 55W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262 (I2PAK)
STL12N3LLH5

STL12N3LLH5

MOSFET N-CH 30V 12A POWERFLAT

STMicroelectronics

2,668 -
RFQ
STL12N3LLH5

Datenblatt

STripFET™ V 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12A (Tc) 4.5V, 10V 9mOhm @ 6A, 10V 2.5V @ 250µA 12 nC @ 4.5 V ±22V 1500 pF @ 25 V - 2W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerFlat™ (3.3x3.3)
NTHD3101FT1G

NTHD3101FT1G

MOSFET P-CH 20V 3.2A CHIPFET

onsemi

3,000 -
RFQ
NTHD3101FT1G

Datenblatt

- 8-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 3.2A (Tj) 1.8V, 4.5V 80mOhm @ 3.2A, 4.5V 1.5V @ 250µA 7.4 nC @ 4.5 V ±8V 680 pF @ 10 V Schottky Diode (Isolated) 1.1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount ChipFET™
NDF08N50ZH

NDF08N50ZH

MOSFET N-CH 500V 8.5A TO220FP

onsemi

5,775 -
RFQ
NDF08N50ZH

Datenblatt

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 8.5A (Tc) 10V 850mOhm @ 3.6A, 10V 4.5V @ 100µA 46 nC @ 10 V ±30V 1095 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-2 Full Pack
IRL3103STRLPBF

IRL3103STRLPBF

MOSFET N-CH 30V 64A D2PAK

Infineon Technologies

6,445 -
RFQ
IRL3103STRLPBF

Datenblatt

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 64A (Tc) 4.5V, 10V 12mOhm @ 34A, 10V 1V @ 250µA 33 nC @ 4.5 V ±16V 1650 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
SPS04N60C3AKMA1

SPS04N60C3AKMA1

N-CHANNEL POWER MOSFET

Infineon Technologies

101,415 -
RFQ
SPS04N60C3AKMA1

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
NDP4060

NDP4060

MOSFET N-CH 60V 15A TO220-3

Fairchild Semiconductor

86,239 -
RFQ
NDP4060

Datenblatt

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 15A (Tc) 10V 100mOhm @ 7.5A, 10V 4V @ 250µA 17 nC @ 10 V ±20V 450 pF @ 25 V - 50W (Tc) -65°C ~ 175°C (TJ) - - Through Hole TO-220-3
NTD4804N-35G

NTD4804N-35G

MOSFET N-CH 30V 14.5A/124A IPAK

onsemi

4,900 -
RFQ
NTD4804N-35G

Datenblatt

- TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14.5A (Ta), 124A (Tc) 4.5V, 11.5V 4mOhm @ 30A, 10V 2.5V @ 250µA 40 nC @ 4.5 V ±20V 4490 pF @ 12 V - 1.43W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
FQPF9N25CRDTU

FQPF9N25CRDTU

8.8A, 250V, N-CHANNEL, MOSFET

Fairchild Semiconductor

42,981 -
RFQ
FQPF9N25CRDTU

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
HUFA75623S3ST

HUFA75623S3ST

MOSFET N-CH 100V 22A D2PAK

Fairchild Semiconductor

32,730 -
RFQ
HUFA75623S3ST

Datenblatt

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 100 V 22A (Tc) 10V 64mOhm @ 22A, 10V 4V @ 250µA 52 nC @ 20 V ±20V 790 pF @ 25 V - 85W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
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