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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    NVMSD6N303R2G

    NVMSD6N303R2G

    MOSFET N-CH 30V 6A 8SOIC

    onsemi

    		 3,168 -
    RFQ

    -

    		 - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6A (Ta) - 32mOhm @ 6A, 10V 2.5V @ 250µA 30 nC @ 10 V - 950 pF @ 24 V Schottky Diode (Isolated) - -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount 8-SOIC
    2SK3492-TL-E

    2SK3492-TL-E

    GENERAL PURPOSE TRANSISTOR

    onsemi

    		 17,500 -
    RFQ
    		2SK3492-TL-E

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    2SJ659-DL-E

    2SJ659-DL-E

    PCH 4V DRIVE SERIES

    onsemi

    		 15,000 -
    RFQ
    		2SJ659-DL-E

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    BS170-D74Z

    BS170-D74Z

    MOSFET N-CH 60V 500MA TO92-3

    onsemi

    		 12,635 -
    RFQ
    		BS170-D74Z

    Datenblatt

         		- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Cut Tape (CT) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 500mA (Ta) 10V 5Ohm @ 200mA, 10V 3V @ 1mA - ±20V 40 pF @ 10 V - 830mW (Ta) -55°C ~ 150°C (TJ) - - Through Hole TO-92-3
    RFP2P10

    RFP2P10

    P-CHANNEL POWER MOSFET

    Harris Corporation

    		 11,516 -
    RFQ
    		RFP2P10

    Datenblatt

         		- TO-220-3 Bulk Active P-Channel MOSFET (Metal Oxide) 100 V 2A (Tc) 10V 3.5Ohm @ 1A, 10V 4V @ 1mA - ±20V 150 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    ATP203-TL-H

    ATP203-TL-H

    MOSFET N-CH 30V 75A ATPAK

    onsemi

    		 7,137 -
    RFQ

    -

    		 - ATPAK (2 Leads+Tab) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Ta) 4.5V, 10V 8.2mOhm @ 38A, 10V - 44 nC @ 10 V ±20V 2750 pF @ 10 V - 50W (Tc) 150°C (TJ) - - Surface Mount ATPAK
    HUF75307D3

    HUF75307D3

    MOSFET N-CH 55V 15A IPAK

    Harris Corporation

    		 7,768 -
    RFQ
    		HUF75307D3

    Datenblatt

         		UltraFET™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 15A (Tc) 10V 90mOhm @ 15A, 10V 4V @ 250µA 20 nC @ 20 V ±20V 250 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    NTMFS4122NT1G

    NTMFS4122NT1G

    MOSFET N-CH 30V 9.1A 5DFN

    onsemi

    		 7,228 -
    RFQ
    		NTMFS4122NT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.1A (Ta) 4.5V, 10V 6mOhm @ 14A, 10V 2.5V @ 250µA 30 nC @ 4.5 V ±20V 2310 pF @ 24 V - 900mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    FQPF30N06L

    FQPF30N06L

    MOSFET N-CH 60V 22.5A TO220F

    onsemi

    		 8,185 -
    RFQ
    		FQPF30N06L

    Datenblatt

         		QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 22.5A (Tc) 5V, 10V 35mOhm @ 11.3A, 10V 2.5V @ 250µA 20 nC @ 5 V ±20V 1040 pF @ 25 V - 38W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220F-3
    IPU95R2K0P7AKMA1

    IPU95R2K0P7AKMA1

    MOSFET N-CH 950V 4A TO251-3

    Infineon Technologies

    		 9,514 -
    RFQ
    		IPU95R2K0P7AKMA1

    Datenblatt

         		CoolMOS™ P7 TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 950 V 4A (Tc) 10V 2Ohm @ 1.7A, 10V 3.5V @ 80µA 10 nC @ 10 V ±20V 330 pF @ 400 V - 37W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
    ATP203-TL-H

    ATP203-TL-H

    MOSFET N-CH 30V 75A ATPAK

    Sanyo

    		 6,000 -
    RFQ
    		ATP203-TL-H

    Datenblatt

         		- ATPAK (2 Leads+Tab) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Ta) 4.5V, 10V 8.2mOhm @ 38A, 10V - 44 nC @ 10 V ±20V 2750 pF @ 10 V - 50W (Tc) 150°C (TJ) - - Surface Mount ATPAK
    RF1S15N06SM

    RF1S15N06SM

    N-CHANNEL POWER MOSFET

    Harris Corporation

    		 4,894 -
    RFQ
    		RF1S15N06SM

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 15A - - - - - - - - - - - Surface Mount TO-263AB
    NTTFS4840NTAG

    NTTFS4840NTAG

    MOSFET N-CH 30V 4.6A/26A 8WDFN

    onsemi

    		 5,016 -
    RFQ
    		NTTFS4840NTAG

    Datenblatt

         		- 8-PowerWDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 4.6A (Ta), 26A (Tc) 4.5V, 11.5V 24mOhm @ 20A, 10V 3V @ 250µA 10.8 nC @ 10 V ±20V 580 pF @ 15 V - 840mW (Ta), 27.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-WDFN (3.3x3.3)
    NTB75N03RT4G

    NTB75N03RT4G

    MOSFET N-CH 25V 9.7A/75A D2PAK

    onsemi

    		 2,538 -
    RFQ
    		NTB75N03RT4G

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 9.7A (Ta), 75A (Tc) 4.5V, 10V 8mOhm @ 20A, 10V 2V @ 250µA 13.2 nC @ 10 V ±20V 1333 pF @ 20 V - 1.25W (Ta), 74.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
    HUF76409D3

    HUF76409D3

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 3,600 -
    RFQ
    		HUF76409D3

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 4.5V, 10V 63mOhm @ 18A, 10V 3V @ 250µA 15 nC @ 10 V ±16V 485 pF @ 25 V - 49W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    FDS4465-G

    FDS4465-G

    MOSFET P-CH 20V 8SOIC

    onsemi

    		 3,642 -
    RFQ
    		FDS4465-G

    Datenblatt

         		PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 13.5A (Ta) 1.8V, 4.5V 8.5mOhm @ 13.5A, 4.5V 1.5V @ 250µA 120 nC @ 4.5 V ±8V 8237 pF @ 10 V - 1.2W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount 8-SOIC
    2SJ557(0)T1B-AT

    2SJ557(0)T1B-AT

    SMALL SIGNAL P-CHANNEL MOSFET

    Renesas Electronics Corporation

    		 3,000 -
    RFQ
    		2SJ557(0)T1B-AT

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    G2003A

    G2003A

    N190V, 3A,RD<540M@10V,VTH1.0V~3.

    Goford Semiconductor

    		 2,880 -
    RFQ
    		G2003A

    Datenblatt

         		TrenchFET® TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 190 V 3A (Tc) 4.5V, 10V 540mOhm @ 2A, 10V 3V @ 250µA 12 nC @ 10 V ±20V 580 pF @ 25 V - 1.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
    HUFA76432S3ST

    HUFA76432S3ST

    MOSFET N-CH 60V 59A D2PAK

    Fairchild Semiconductor

    		 2,829 -
    RFQ
    		HUFA76432S3ST

    Datenblatt

         		UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 59A (Tc) 4.5V, 10V 17mOhm @ 59A, 10V 3V @ 250µA 53 nC @ 10 V ±16V 1765 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
    NIF9N05CLT3G-SY

    NIF9N05CLT3G-SY

    2.6 A, 52 V, N-CHANNEL, LOGIC LE

    Sanyo

    		 2,650 -
    RFQ
    		NIF9N05CLT3G-SY

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
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