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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    FDD8874

    FDD8874

    MOSFET N-CH 30V 116A D-PAK

    onsemi

    		 2,216 -
    RFQ
    		FDD8874

    Datenblatt

         		PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta), 116A (Tc) 4.5V, 10V 5.1mOhm @ 35A, 10V 2.5V @ 250µA 72 nC @ 10 V ±20V 2990 pF @ 15 V - 110W (Tc) -55°C ~ 155°C (TJ) - - Surface Mount TO-252AA
    RFD4N06LSM9A

    RFD4N06LSM9A

    MOSFET N-CH 60V 4A TO252AA

    Fairchild Semiconductor

    		 67,132 -
    RFQ
    		RFD4N06LSM9A

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 4A (Tc) 5V 600mOhm @ 1A, 5V 2.5V @ 250µA 8 nC @ 10 V ±10V - - 30W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
    CPH3456-TL-W

    CPH3456-TL-W

    MOSFET N-CH 20V 3.5A 3CPH

    onsemi

    		 3,005 -
    RFQ
    		CPH3456-TL-W

    Datenblatt

         		- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 3.5A (Ta) 1.8V, 4.5V 71mOhm @ 1.5A, 4.5V 1.3V @ 1mA 2.8 nC @ 4.5 V ±12V 260 pF @ 10 V - 1W (Ta) 150°C (TJ) - - Surface Mount 3-CPH
    HUF76129D3ST

    HUF76129D3ST

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 42,200 -
    RFQ
    		HUF76129D3ST

    Datenblatt

         		UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 4.5V, 10V 16mOhm @ 20A, 10V 3V @ 250µA 46 nC @ 10 V ±20V 1425 pF @ 25 V - 105W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    HUF76437S3ST

    HUF76437S3ST

    MOSFET N-CH 60V 71A D2PAK

    Fairchild Semiconductor

    		 17,682 -
    RFQ
    		HUF76437S3ST

    Datenblatt

         		UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 71A (Tc) 4.5V, 10V 14mOhm @ 71A, 10V 3V @ 250µA 71 nC @ 10 V ±16V 2230 pF @ 25 V - 155W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
    STD4815NT4G

    STD4815NT4G

    MOSFET N-CH 30V 35A DPAK

    onsemi

    		 12,500 -
    RFQ

    -

    		 * - Bulk Obsolete - - - - - - - - - - - - - - - - -
    NTLJS4D7N03HTAG

    NTLJS4D7N03HTAG

    MOSFET N-CH 25V 11.6A 6PQFN

    onsemi

    		 6,379 -
    RFQ

    -

    		 - 6-PowerWDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 11.6A (Ta) 4.5V, 10V 4.1mOhm @ 10A, 10V 2.1V @ 250µA 14 nC @ 10 V ±20V 851 pF @ 15 V - 860mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-PQFN (2x2)
    FQB11N40TM

    FQB11N40TM

    MOSFET N-CH 400V 11.4A D2PAK

    Fairchild Semiconductor

    		 8,000 -
    RFQ
    		FQB11N40TM

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 400 V 11.4A (Tc) 10V 480mOhm @ 5.7A, 10V 5V @ 250µA 35 nC @ 10 V ±30V 1400 pF @ 25 V - 3.13W (Ta), 147W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    IRLR210ATM

    IRLR210ATM

    MOSFET N-CH 200V 2.7A DPAK

    Fairchild Semiconductor

    		 7,500 -
    RFQ
    		IRLR210ATM

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 200 V 2.7A (Tc) 5V 1.5Ohm @ 1.35A, 5V 2V @ 250µA 9 nC @ 5 V ±20V 240 pF @ 25 V - 2.5W (Ta), 21W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    HUF75637P3

    HUF75637P3

    MOSFET N-CH 100V 44A TO220-3

    Fairchild Semiconductor

    		 5,595 -
    RFQ
    		HUF75637P3

    Datenblatt

         		UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 44A (Tc) 10V 30mOhm @ 44A, 10V 4V @ 250µA 108 nC @ 20 V ±20V 1700 pF @ 25 V - 155W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
    IPL65R1K5C6SATMA1

    IPL65R1K5C6SATMA1

    MOSFET N-CH 650V 3A THIN-PAK

    Infineon Technologies

    		 4,878 -
    RFQ
    		IPL65R1K5C6SATMA1

    Datenblatt

         		CoolMOS™ C6 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 650 V 3A (Tc) 10V 1.5Ohm @ 1A, 10V 3.5V @ 100µA 11 nC @ 10 V ±20V 225 pF @ 100 V - 26.6W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-TSON-8-2
    ISL9N327AD3ST

    ISL9N327AD3ST

    N-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 5,000 -
    RFQ
    		ISL9N327AD3ST

    Datenblatt

         		UltraFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 4.5V, 10V 27mOhm @ 20A, 10V 3V @ 250µA 26 nC @ 10 V ±20V 910 pF @ 15 V - 50W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
    NDS9400

    NDS9400

    P-CHANNEL POWER MOSFET

    Fairchild Semiconductor

    		 5,000 -
    RFQ
    		NDS9400

    Datenblatt

         		- 8-SOIC (0.154", 3.90mm Width) Bulk Active P-Channel MOSFET (Metal Oxide) - 2.5A - - - - - - - 2W - - - Surface Mount 8-SOIC
    NTB8N50

    NTB8N50

    N-CHANNEL POWER MOSFET

    onsemi

    		 4,250 -
    RFQ
    		NTB8N50

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    NTDV20N06LT4G-VF01

    NTDV20N06LT4G-VF01

    MOSFET N-CH 60V 20A DPAK

    onsemi

    		 3,254 -
    RFQ

    -

    		 - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 20A (Ta) 10V 46mOhm @ 10A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 1015 pF @ 25 V - 1.88W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
    BUK7509-55A,127

    BUK7509-55A,127

    NEXPERIA BUK7509-55A - 75A, 55V,

    NXP Semiconductors

    		 3,370 -
    RFQ
    		BUK7509-55A,127

    Datenblatt

         		TrenchMOS™ TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 9mOhm @ 25A, 10V 4V @ 1mA 62 nC @ 0 V ±20V 3271 pF @ 25 V - 211W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-220AB
    FDMC7664

    FDMC7664

    MOSFET N-CH 30V 18.8A/24A 8MLP

    onsemi

    		 7,635 -
    RFQ
    		FDMC7664

    Datenblatt

         		PowerTrench® 8-PowerWDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 18.8A (Ta), 24A (Tc) 4.5V, 10V 4.2mOhm @ 18.8A, 10V 3V @ 250µA 76 nC @ 10 V ±20V 4865 pF @ 15 V - 2.3W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-MLP (3.3x3.3)
    IPB50CN10NGATMA1

    IPB50CN10NGATMA1

    MOSFET N-CH 100V 20A TO263-3

    Infineon Technologies

    		 2,414 -
    RFQ
    		IPB50CN10NGATMA1

    Datenblatt

         		OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100 V 20A (Tc) 10V 50mOhm @ 20A, 10V 4V @ 20µA 16 nC @ 10 V ±20V 1090 pF @ 50 V - 44W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
    AUIRFC8407TR

    AUIRFC8407TR

    AUTOMOTIVE POWER MOSFET

    Infineon Technologies

    		 2,064 -
    RFQ

    -

    		 * - Bulk Active - - - - - - - - - - - - - - - - -
    IRF7421D1TRPBF

    IRF7421D1TRPBF

    MOSFET N-CH 30V 5.8A 8SO

    Infineon Technologies

    		 1,389 -
    RFQ
    		IRF7421D1TRPBF

    Datenblatt

         		FETKY™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 5.8A (Ta) 4.5V, 10V 35mOhm @ 4.1A, 10V 1V @ 250µA 27 nC @ 10 V ±20V 510 pF @ 25 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
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