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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    NVD5484NLT4G

    NVD5484NLT4G

    MOSFET N-CH 60V 10.7A/54A DPAK-3

    onsemi

    		 3,165 -
    RFQ
    		NVD5484NLT4G

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 10.7A (Ta), 54A (Tc) 4.5V, 10V 17mOhm @ 25A, 10V 2.5V @ 250µA 48 nC @ 10 V ±20V 1410 pF @ 25 V - 3.9W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK-3
    G2002A

    G2002A

    N200V, 2A,RD<540M@10V,VTH1.0V~3.

    Goford Semiconductor

    		 1,225 -
    RFQ
    		G2002A

    Datenblatt

         		TrenchFET® SOT-23-6 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 200 V 2A (Tc) 4.5V, 10V 540mOhm @ 1A, 10V 3V @ 250µA 16 nC @ 10 V ±20V 733 pF @ 100 V - 2.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6L
    NVMFS5832NLWFT3G

    NVMFS5832NLWFT3G

    MOSFET N-CH 40V 21A 5DFN

    onsemi

    		 20,000 -
    RFQ
    		NVMFS5832NLWFT3G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 21A (Ta) 4.5V, 10V 4.2mOhm @ 20A, 10V 2.4V @ 250µA 51 nC @ 10 V ±20V 2700 pF @ 25 V - 3.7W (Ta), 127W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
    RJK03M8DNS-00#J5

    RJK03M8DNS-00#J5

    MOSFET N-CH 30V 30A 8HWSON

    Renesas Electronics Corporation

    		 305,000 -
    RFQ
    		RJK03M8DNS-00#J5

    Datenblatt

         		- 8-PowerWDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta) - 5.2mOhm @ 15A, 10V - 14.5 nC @ 4.5 V - 2590 pF @ 10 V - 20W (Tc) 150°C (TJ) - - Surface Mount 8-HWSON (3.3x3.3)
    FQD1N50TM

    FQD1N50TM

    MOSFET N-CH 500V 1.1A DPAK

    Fairchild Semiconductor

    		 241,289 -
    RFQ
    		FQD1N50TM

    Datenblatt

         		QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 500 V 1.1A (Tc) 10V 9Ohm @ 550mA, 10V 5V @ 250µA 5.5 nC @ 10 V ±30V 150 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    RJK0352DSP-00#J0

    RJK0352DSP-00#J0

    MOSFET N-CH 30V 18A 8SOP

    Renesas Electronics Corporation

    		 182,500 -
    RFQ
    		RJK0352DSP-00#J0

    Datenblatt

         		- 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta) - 5.6mOhm @ 9A, 10V - 16 nC @ 4.5 V - 2440 pF @ 10 V - 2W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
    FDW262P

    FDW262P

    MOSFET P-CH 20V 4.5A 8TSSOP

    Fairchild Semiconductor

    		 168,330 -
    RFQ
    		FDW262P

    Datenblatt

         		PowerTrench® 8-TSSOP (0.173", 4.40mm Width) Bulk Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.5A (Ta) 1.8V, 4.5V 47mOhm @ 4.5A, 4.5V 1.5V @ 250µA 18 nC @ 4.5 V ±8V 1193 pF @ 10 V - 1.3W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
    IRLML6302TRPBF

    IRLML6302TRPBF

    MOSFET P-CH 20V 780MA SOT23

    Infineon Technologies

    		 151,535 -
    RFQ
    		IRLML6302TRPBF

    Datenblatt

         		HEXFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 780mA (Ta) 2.7V, 4.5V 600mOhm @ 610mA, 4.5V 1.5V @ 250µA 3.6 nC @ 4.45 V ±12V 97 pF @ 15 V - 540mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount Micro3™/SOT-23
    FDMS8674

    FDMS8674

    MOSFET N-CH 30V 17A/21A 8PQFN

    Fairchild Semiconductor

    		 147,879 -
    RFQ
    		FDMS8674

    Datenblatt

         		PowerTrench® 8-PowerTDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta), 21A (Tc) 4.5V, 10V 5mOhm @ 17A, 10V 3V @ 250µA 37 nC @ 10 V ±20V 2320 pF @ 15 V - 2.5W (Ta), 78W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
    NTD4809NHT4G

    NTD4809NHT4G

    MOSFET N-CH 30V 9.6A/58A DPAK

    onsemi

    		 6,584 -
    RFQ
    		NTD4809NHT4G

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.6A (Ta), 58A (Tc) 4.5V, 11.5V 9mOhm @ 30A, 10V 2.5V @ 250µA 15 nC @ 4.5 V ±20V 2155 pF @ 12 V - 1.3W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
    FQPF12P10

    FQPF12P10

    MOSFET P-CH 100V 8.2A TO220F

    Fairchild Semiconductor

    		 96,000 -
    RFQ
    		FQPF12P10

    Datenblatt

         		QFET® TO-220-3 Full Pack Tube Obsolete P-Channel MOSFET (Metal Oxide) 100 V 8.2A (Tc) 10V 290mOhm @ 4.1A, 10V 4V @ 250µA 27 nC @ 10 V ±30V 800 pF @ 25 V - 38W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220F-3
    FQPF30N06

    FQPF30N06

    MOSFET N-CH 60V 21A TO220F

    Fairchild Semiconductor

    		 80,000 -
    RFQ
    		FQPF30N06

    Datenblatt

         		QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 21A (Tc) 10V 40mOhm @ 10.5A, 10V 4V @ 250µA 25 nC @ 10 V ±25V 945 pF @ 25 V - 39W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220F-3
    FDP6030L

    FDP6030L

    MOSFET N-CH 30V 48A TO220-3

    Fairchild Semiconductor

    		 60,736 -
    RFQ
    		FDP6030L

    Datenblatt

         		PowerTrench® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 48A (Ta) 4.5V, 10V 13mOhm @ 26A, 10V 3V @ 250µA 18 nC @ 5 V ±20V 1250 pF @ 15 V - 52W (Tc) -65°C ~ 175°C (TJ) - - Through Hole TO-220-3
    NTTFS4C55NTAG

    NTTFS4C55NTAG

    MOSFET N-CH 30V 75A 8WDFN

    onsemi

    		 5,427 -
    RFQ

    -

    		 - 8-PowerWDFN Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - Surface Mount 8-WDFN (3.3x3.3)
    IRFD110

    IRFD110

    1A, 100V, 0.600 OHM, N-CHANNEL

    Harris Corporation

    		 43,868 -
    RFQ
    		IRFD110

    Datenblatt

         		- 4-DIP (0.300", 7.62mm) Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 1A (Ta) 10V 540mOhm @ 600mA, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) - - Through Hole 4-DIP, Hexdip, HVMDIP
    RJK0212DPA-00#J5A

    RJK0212DPA-00#J5A

    MOSFET N-CH WPAK

    Renesas Electronics Corporation

    		 27,000 -
    RFQ
    		RJK0212DPA-00#J5A

    Datenblatt

         		- 8-PowerVDFN Bulk Obsolete - - - - - - - - - - - - - - - Surface Mount WPAK(3)
    MMSF7P03HDR2G

    MMSF7P03HDR2G

    MOSFET P-CH 30V 7A 8SOIC

    onsemi

    		 5,383 -
    RFQ
    		MMSF7P03HDR2G

    Datenblatt

         		- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 7A (Ta) 4.5V, 10V 35mOhm @ 5.3A, 10V 1V @ 250µA 75.8 nC @ 6 V ±20V 1680 pF @ 24 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    NTMKE4890NT1G

    NTMKE4890NT1G

    N-CHANNEL POWER MOSFET

    onsemi

    		 21,000 -
    RFQ
    		NTMKE4890NT1G

    Datenblatt

         		* - Bulk Active - - - - - - - - - - - - - - - - -
    NTD6414AN-1G

    NTD6414AN-1G

    MOSFET N-CH 100V 32A IPAK

    onsemi

    		 8,636 -
    RFQ
    		NTD6414AN-1G

    Datenblatt

         		- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 32A (Tc) 10V 37mOhm @ 32A, 10V 4V @ 250µA 40 nC @ 10 V ±20V 1450 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
    FDS7082N3

    FDS7082N3

    MOSFET N-CH 30V 17.5A 8SO

    Fairchild Semiconductor

    		 13,304 -
    RFQ
    		FDS7082N3

    Datenblatt

         		PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 17.5A (Ta) 4.5V, 10V 6mOhm @ 17.5A, 10V 3V @ 250µA 53 nC @ 10 V ±20V 2271 pF @ 15 V - 3W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
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