FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
RJK03B9DPA-00#J5A

RJK03B9DPA-00#J5A

MOSFET N-CH 30V 30A 8WPAK

Renesas Electronics Corporation

3,000 -
RFQ
RJK03B9DPA-00#J5A

Datenblatt

- 8-PowerWDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta) - 10.6mOhm @ 15A, 10V - 7.4 nC @ 4.5 V - 1110 pF @ 10 V - 25W (Tc) 150°C (TJ) - - Surface Mount 8-WPAK
RJK0395DPA-00#J5A

RJK0395DPA-00#J5A

MOSFET N-CH 30V 30A 8WPAK

Renesas Electronics Corporation

3,000 -
RFQ
RJK0395DPA-00#J5A

Datenblatt

- 8-WFDFN Exposed Pad Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta) - 7.7mOhm @ 15A, 10V - 11 nC @ 4.5 V - 1670 pF @ 10 V - 30W (Tc) 150°C (TJ) - - Surface Mount 8-WPAK
RJK0395DPA-00#J53

RJK0395DPA-00#J53

MOSFET N-CH 30V 30A 8WPAK

Renesas Electronics Corporation

3,000 -
RFQ
RJK0395DPA-00#J53

Datenblatt

- 8-PowerWDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta) - 7.7mOhm @ 15A, 10V - 11 nC @ 4.5 V - 1670 pF @ 10 V - 30W (Tc) - - - Surface Mount 8-WPAK
FDS9435A

FDS9435A

MOSFET P-CH 30V 5.3A 8SOIC

UMW

2,990 -
RFQ
FDS9435A

Datenblatt

* - Cut Tape (CT) Active - - - - - - - - - - - - - - - - -
G170P02D2

G170P02D2

P-20V,-16A,RD(MAX)<[email protected],VTH

Goford Semiconductor

2,970 -
RFQ
G170P02D2

Datenblatt

TrenchFET® 6-UDFN Exposed Pad Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 20 V 16A (Tc) 2.5V, 4.5V 17mOhm @ 6A, 4.5V 1V @ 250µA 30 nC @ 10 V ±8V 2179 pF @ 10 V - 18W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 6-DFN (2x2)
FQI2N90TU

FQI2N90TU

MOSFET N-CH 900V 2.2A I2PAK

Fairchild Semiconductor

2,930 -
RFQ
FQI2N90TU

Datenblatt

QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 900 V 2.2A (Tc) 10V 7.2Ohm @ 1.1A, 10V 5V @ 250µA 15 nC @ 10 V ±30V 500 pF @ 25 V - 3.13W (Ta), 85W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262 (I2PAK)
RJK03B7DPA-WS#J53

RJK03B7DPA-WS#J53

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

2,890 -
RFQ
RJK03B7DPA-WS#J53

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
NDB4060

NDB4060

MOSFET N-CH 60V 15A D2PAK

Fairchild Semiconductor

2,827 -
RFQ
NDB4060

Datenblatt

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 15A (Tc) 10V 100mOhm @ 7.5A, 10V 4V @ 250µA 17 nC @ 10 V ±20V 450 pF @ 25 V - 50W (Tc) -65°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
ND2012L-TR1

ND2012L-TR1

SMALL SIGNAL N-CHANNEL MOSFET

Siliconix

2,765 -
RFQ
ND2012L-TR1

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
RJK0395DPA-WS#J53

RJK0395DPA-WS#J53

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

2,690 -
RFQ
RJK0395DPA-WS#J53

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
2SK4070-ZK-E2-AY

2SK4070-ZK-E2-AY

N-CHANNEL MOSFET

NEC Corporation

2,500 -
RFQ
2SK4070-ZK-E2-AY

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 1A (Tc) 10V 11Ohm @ 500mA, 10V 3.5V @ 1mA 5 nC @ 10 V ±30V 110 pF @ 10 V - 1W (Ta), 22W (Tc) 150°C - - Surface Mount TO-252 (MP-3ZK)
BUZ100S

BUZ100S

N-CHANNEL POWER MOSFET

Infineon Technologies

2,483 -
RFQ
BUZ100S

Datenblatt

SIPMOS® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 77A (Tc) 10V 15mOhm @ 55A, 10V 4V @ 130µA 100 nC @ 10 V ±20V 2375 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
RJK03B8DPA-WS#J53

RJK03B8DPA-WS#J53

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

2,475 -
RFQ
RJK03B8DPA-WS#J53

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
RJK03B9DPA-WS#J53

RJK03B9DPA-WS#J53

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

2,465 -
RFQ
RJK03B9DPA-WS#J53

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
HUF76419D3STR4921

HUF76419D3STR4921

20A, 60V, 0.043OHM, N CHANNEL ,

Fairchild Semiconductor

2,175 -
RFQ
HUF76419D3STR4921

Datenblatt

UltraFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 4.5V, 10V 37mOhm @ 20A, 10V 3V @ 250µA 27.5 nC @ 10 V ±16V 900 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
FQPF14N15

FQPF14N15

MOSFET N-CH 150V 9.8A TO220F

Fairchild Semiconductor

1,856 -
RFQ
FQPF14N15

Datenblatt

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 150 V 9.8A (Tc) 10V 210mOhm @ 4.9A, 10V 4V @ 250µA 23 nC @ 10 V ±25V 715 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220F-3
FQI17N08TU

FQI17N08TU

MOSFET N-CH 80V 16.5A I2PAK

Fairchild Semiconductor

1,354 -
RFQ
FQI17N08TU

Datenblatt

QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 80 V 16.5A (Tc) 10V 115mOhm @ 8.25A, 10V 4V @ 250µA 15 nC @ 10 V ±25V 450 pF @ 25 V - 3.13W (Ta), 65W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262 (I2PAK)
SPD30N08S2-22

SPD30N08S2-22

MOSFET N-CH 75V 30A TO252-3

Infineon Technologies

2,859 -
RFQ
SPD30N08S2-22

Datenblatt

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 75 V 30A (Tc) 10V 21.5mOhm @ 25A, 10V 4V @ 80µA 57 nC @ 10 V ±20V 1950 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
NTB75N03RT4

NTB75N03RT4

MOSFET N-CH 25V 9.7A/75A D2PAK

onsemi

7,359 -
RFQ
NTB75N03RT4

Datenblatt

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 9.7A (Ta), 75A (Tc) 4.5V, 10V 8mOhm @ 20A, 10V 2V @ 250µA 13.2 nC @ 10 V ±20V 1333 pF @ 20 V - 1.25W (Ta), 74.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
SFR9110TF

SFR9110TF

MOSFET P-CH 100V 2.8A DPAK

Fairchild Semiconductor

122,386 -
RFQ
SFR9110TF

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 100 V 2.8A (Tc) 10V 1.2Ohm @ 1.4A, 10V 4V @ 250µA 10 nC @ 10 V ±30V 335 pF @ 25 V - 2.5W (Ta), 20W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
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