FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
FQI5N30TU

FQI5N30TU

MOSFET N-CH 300V 5.4A I2PAK

Fairchild Semiconductor

2,849 -
RFQ
FQI5N30TU

Datenblatt

QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 300 V 5.4A (Tc) 10V 900mOhm @ 2.7A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 430 pF @ 25 V - 3.13W (Ta), 70W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262 (I2PAK)
1N60L

1N60L

TO-252 N-CHANNEL POWER MOSFET

UMW

2,469 -
RFQ
1N60L

Datenblatt

UMW TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 600 V 1A (Tj) 10V 11Ohm @ 500mA, 10V 4V @ 250µA 4.8 nC @ 10 V ±30V 150 pF @ 25 V - - 150°C (TJ) - - Surface Mount TO-252 (DPAK)
RFP8N20

RFP8N20

N-CHANNEL POWER MOSFET

Harris Corporation

2,366 -
RFQ
RFP8N20

Datenblatt

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 8A (Tc) 10V 500mOhm @ 4A, 10V 4V @ 1mA - ±20V 750 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
1N65L

1N65L

TO-252 N-CHANNEL POWER MOSFET

UMW

2,358 -
RFQ
1N65L

Datenblatt

UMW TO-252-3, DPAK (2 Leads + Tab), SC-63 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 650 V 1A (Tj) 10V 11Ohm @ 500mA, 10V 4V @ 250µA 4.8 nC @ 10 V ±30V 150 pF @ 25 V - - 150°C (TJ) - - Surface Mount TO-252 (DPAK)
FQPF5N50

FQPF5N50

MOSFET N-CH 500V 3A TO220F

Fairchild Semiconductor

1,999 -
RFQ
FQPF5N50

Datenblatt

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 3A (Tc) 10V 1.8Ohm @ 1.5A, 10V 5V @ 250µA 17 nC @ 10 V ±30V 610 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
AO4435

AO4435

SOP-8 MOSFETS ROHS

UMW

1,995 -
RFQ
AO4435

Datenblatt

UMW 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 30 V 12A (Ta) 4.5V, 10V 20mOhm @ 7A, 10V 3V @ 250µA 29 nC @ 4.5 V ±20V 1690 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
FQD16N15TM

FQD16N15TM

MOSFET N-CH 150V 11.8A DPAK

Fairchild Semiconductor

1,947 -
RFQ
FQD16N15TM

Datenblatt

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 150 V 11.8A (Tc) 10V 160mOhm @ 5.9A, 10V 4V @ 250µA 30 nC @ 10 V ±25V 910 pF @ 25 V - 2.5W (Ta), 55W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
RJK0352DSP-WS#J0

RJK0352DSP-WS#J0

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

1,850 -
RFQ
RJK0352DSP-WS#J0

Datenblatt

* - Bulk Active - - - - - - - - - - - - - - - - -
FQP2NA90

FQP2NA90

MOSFET N-CH 900V 2.8A TO220-3

Fairchild Semiconductor

1,789 -
RFQ
FQP2NA90

Datenblatt

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 900 V 2.8A (Tc) 10V 5.8Ohm @ 1.4A, 10V 5V @ 250µA 20 nC @ 10 V ±30V 680 pF @ 25 V - 107W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
FDP5N50

FDP5N50

MOSFET N-CH 500V 5A TO220-3

Fairchild Semiconductor

1,761 -
RFQ
FDP5N50

Datenblatt

UniFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.4Ohm @ 2.5A, 10V 5V @ 250µA 15 nC @ 10 V ±30V 640 pF @ 25 V - 85W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
FDPF12N35

FDPF12N35

MOSFET N-CH 350V 12A TO220F

Fairchild Semiconductor

1,458 -
RFQ
FDPF12N35

Datenblatt

UniFET™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 350 V 12A (Tc) 10V 380mOhm @ 6A, 10V 5V @ 250µA 25 nC @ 10 V ±30V 1110 pF @ 25 V - 31.3W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
FQPF19N10L

FQPF19N10L

MOSFET N-CH 100V 13.6A TO220F

Fairchild Semiconductor

1,448 -
RFQ
FQPF19N10L

Datenblatt

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 13.6A (Tc) 5V, 10V 100mOhm @ 6.8A, 10V 2V @ 250µA 18 nC @ 5 V ±20V 870 pF @ 25 V - 38W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220F-3
FQD3N60TF

FQD3N60TF

MOSFET N-CH 600V 2.4A DPAK

Fairchild Semiconductor

1,338 -
RFQ
FQD3N60TF

Datenblatt

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.4A (Tc) 10V 3.6Ohm @ 1.2A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 450 pF @ 25 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
PMCM4401VNEAZ

PMCM4401VNEAZ

MOSFET N-CH 12V 4.7A 4WLCSP

Nexperia USA Inc.

112,495 -
RFQ
PMCM4401VNEAZ

Datenblatt

- 4-XFBGA, WLCSP Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12 V 4.7A (Ta) 1.5V, 4.5V 42mOhm @ 3A, 4.5V 900mV @ 250µA 9 nC @ 4.5 V ±8V 335 pF @ 6 V - 400mW (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 4-WLCSP (0.78x0.78)
FDMS8025S

FDMS8025S

MOSFET N-CH 30V 24A/49A 8PQFN

Fairchild Semiconductor

89,079 -
RFQ
FDMS8025S

Datenblatt

PowerTrench®, SyncFET™ 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 24A (Ta), 49A (Tc) 4.5V, 10V 2.8mOhm @ 24A, 10V 3V @ 1mA 47 nC @ 10 V ±20V 3000 pF @ 15 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
PMCM4401UNEZ

PMCM4401UNEZ

MOSFET N-CH 20V 4WLCSP

Nexperia USA Inc.

45,109 -
RFQ

-

- 4-XFBGA, WLCSP Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 5.4A (Tj) 2.5V, 4.5V - - 6.2 nC @ 4.5 V ±8V - - 400mW 150°C (TJ) - - Surface Mount 4-WLCSP (0.78x0.78)
2N7000-D74Z

2N7000-D74Z

MOSFET N-CH 60V 200MA TO92-3

onsemi

17,217 -
RFQ
2N7000-D74Z

Datenblatt

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) 4.5V, 10V 5Ohm @ 500mA, 10V 3V @ 1mA - ±20V 50 pF @ 25 V - 400mW (Ta) -55°C ~ 150°C (TJ) - - Through Hole TO-92-3
PMCM4401VPEZ

PMCM4401VPEZ

MOSFET P-CH 12V 3.9A 4WLCSP

Nexperia USA Inc.

13,158 -
RFQ
PMCM4401VPEZ

Datenblatt

- 4-XFBGA, WLCSP Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 12 V 3.9A (Ta) 1.8V, 4.5V 65mOhm @ 3A, 4.5V 900mV @ 250µA 10 nC @ 4.5 V ±8V 415 pF @ 6 V - 400mW (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 4-WLCSP (0.78x0.78)
SSFN4906

SSFN4906

MOSFET, N-CH, SINGLE, 35.00A, 40

Good-Ark Semiconductor

12,000 -
RFQ
SSFN4906

Datenblatt

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 35A (Tc) 4.5V, 10V 9mOhm @ 8A, 10V 2.5V @ 250µA 30 nC @ 10 V ±20V 2200 pF @ 25 V - 44W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PPAK (3.1x3.05)
SSF6910

SSF6910

MOSFET, N-CH, SINGLE, 6.80A, 60V

Good-Ark Semiconductor

11,481 -
RFQ
SSF6910

Datenblatt

- TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 6.8A (Tc) 4.5V, 10V 60mOhm @ 6A, 10V 2.5V @ 250µA 21 nC @ 10 V ±20V 1300 pF @ 25 V - 5.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
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