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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IMT40R015M2HXTMA1

    IMT40R015M2HXTMA1

    SIC-MOS

    Infineon Technologies

    		 1,942 -
    RFQ
    		IMT40R015M2HXTMA1

    Datenblatt

         		CoolSiC™ 8-PowerSFN Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 400 V 11.7A (Ta), 111A (Tc) 15V, 18V 19.1mOhm @ 27.1A, 18V 5.6V @ 9.7mA 62 nC @ 18 V +23V, -7V 2730 pF @ 200 V - 3.8W (Ta), 341W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8-2
    GAN039-650NTBJ

    GAN039-650NTBJ

    GAN CASCODE FETS

    Nexperia USA Inc.

    		 948 -
    RFQ

    -

    		 - 12-BESOP (0.370", 9.40mm Width), Exposed Pad Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 650 V 58.5A (Ta) 10V 39mOhm @ 32A, 10V 4.6V @ 1mA 26 nC @ 10 V ±20V 1980 pF @ 400 V - 250W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount CCPAK1212i
    R6086YNZ4C13

    R6086YNZ4C13

    NCH 600V 86A, TO-247, POWER MOSF

    Rohm Semiconductor

    		 521 -
    RFQ
    		R6086YNZ4C13

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 86A (Tc) 10V, 12V 44mOhm @ 17A, 12V 6V @ 4.6mA 110 nC @ 10 V ±30V 5100 pF @ 100 V - 781W (Tc) 150°C (TJ) - - Through Hole TO-247G
    IPDQ60R016CM8XTMA1

    IPDQ60R016CM8XTMA1

    IPDQ60R016CM8XTMA1

    Infineon Technologies

    		 720 -
    RFQ

    -

    		 CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 135A (Tc) 10V 16mOhm @ 62.5A, 10V 4.7V @ 1.48mA 171 nC @ 10 V ±20V 7545 pF @ 400 V - 625W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22
    SCT3080KRHRC15

    SCT3080KRHRC15

    1200V, 31A, 4-PIN THD, TRENCH-ST

    Rohm Semiconductor

    		 440 -
    RFQ
    		SCT3080KRHRC15

    Datenblatt

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 31A (Tc) 18V 104mOhm @ 10A, 18V 5.6V @ 5mA 60 nC @ 18 V +22V, -4V 785 pF @ 800 V - 165W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
    IPDQ60R022S7AXTMA1

    IPDQ60R022S7AXTMA1

    MOSFET

    Infineon Technologies

    		 750 -
    RFQ
    		IPDQ60R022S7AXTMA1

    Datenblatt

         		CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 12V 22mOhm @ 23A, 12V 4.5V @ 1.44mA 150 nC @ 12 V ±20V 5640 pF @ 300 V - 416W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22-1
    NVHL060N090SC1

    NVHL060N090SC1

    SICFET N-CH 900V 46A TO247-3

    onsemi

    		 383 -
    RFQ
    		NVHL060N090SC1

    Datenblatt

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 900 V 46A (Tc) 15V 84mOhm @ 20A, 15V 4.3V @ 5mA 87 nC @ 15 V +19V, -10V 1770 pF @ 450 V - 221W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-3
    SCT3060ARHRC15

    SCT3060ARHRC15

    650V, 39A, 4-PIN THD, TRENCH-STR

    Rohm Semiconductor

    		 446 -
    RFQ
    		SCT3060ARHRC15

    Datenblatt

         		- TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 39A (Tc) 18V 78mOhm @ 13A, 18V 5.6V @ 6.67mA 58 nC @ 18 V +22V, -4V 852 pF @ 500 V - 165W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
    NSF080120L4A0Q

    NSF080120L4A0Q

    NSF080120L4A0/SOT8071/TO247-4L

    Nexperia USA Inc.

    		 446 -
    RFQ
    		NSF080120L4A0Q

    Datenblatt

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 35A (Tc) 15V, 18V 120mOhm @ 20A, 15V 2.9V @ 2mA 52 nC @ 15 V +22V, -10V 1335 pF @ 800 V - 183W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247
    AIMZA75R040M1HXKSA1

    AIMZA75R040M1HXKSA1

    IGBT

    Infineon Technologies

    		 229 -
    RFQ
    		AIMZA75R040M1HXKSA1

    Datenblatt

         		CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 44A (Tj) 15V, 20V 37mOhm @ 16.6A, 20V 5.6V @ 6mA 34 nC @ 18 V +23V, -5V 1135 pF @ 500 V - 185W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4
    IMZA65R033M2HXKSA1

    IMZA65R033M2HXKSA1

    IMZA65R033M2HXKSA1

    Infineon Technologies

    		 390 -
    RFQ
    		IMZA65R033M2HXKSA1

    Datenblatt

         		CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 53A (Tc) 15V, 20V 30mOhm @ 27.9A, 20V 5.6V @ 5.7mA 34 nC @ 18 V +23V, -7V 1214 pF @ 400 V - 194W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-8
    IMBG40R015M2HXTMA1

    IMBG40R015M2HXTMA1

    SIC-MOS

    Infineon Technologies

    		 939 -
    RFQ
    		IMBG40R015M2HXTMA1

    Datenblatt

         		CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 400 V 11.7A (Ta), 111A (Tc) 15V, 18V 19.1mOhm @ 27.1A, 18V 5.6V @ 9.7mA 62 nC @ 18 V +23V, -7V 2730 pF @ 200 V - 3.8W (Ta), 341W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-11
    SCT3060ARC15

    SCT3060ARC15

    650V, 39A, 4-PIN THD, TRENCH-STR

    Rohm Semiconductor

    		 427 -
    RFQ
    		SCT3060ARC15

    Datenblatt

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 39A (Tj) 18V 78mOhm @ 13A, 18V 5.6V @ 6.67mA 58 nC @ 18 V +22V, -4V 852 pF @ 500 V - 165W 175°C (TJ) - - Through Hole TO-247-4L
    SCT3080KRC15

    SCT3080KRC15

    1200V, 31A, 4-PIN THD, TRENCH-ST

    Rohm Semiconductor

    		 365 -
    RFQ
    		SCT3080KRC15

    Datenblatt

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 31A (Tj) 18V 104mOhm @ 10A, 18V 5.6V @ 5mA 60 nC @ 18 V +22V, -4V 785 pF @ 800 V - 165W 175°C (TJ) - - Through Hole TO-247-4L
    NVHL040N65S3HF

    NVHL040N65S3HF

    SUPERFER3 FRFET AUTOMOTIVE 40MOH

    onsemi

    		 430 -
    RFQ
    		NVHL040N65S3HF

    Datenblatt

         		SuperFET® III, FRFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 65A (Tc) 10V 40mOhm @ 32.5A, 10V 5V @ 2.1mA 157 nC @ 10 V ±30V 6655 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    NTH4L030N120M3S

    NTH4L030N120M3S

    SILICON CARBIDE (SIC) MOSFET EL

    onsemi

    		 422 -
    RFQ
    		NTH4L030N120M3S

    Datenblatt

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 73A (Tc) 18V 39mOhm @ 30A, 18V 4.4V @ 15mA 107 nC @ 18 V +22V, -10V 2430 pF @ 800 V - 313W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
    NVH040N65S3F

    NVH040N65S3F

    SF3 FRFET AUTO 40MOHM TO-247

    onsemi

    		 412 -
    RFQ
    		NVH040N65S3F

    Datenblatt

         		SuperFET® III TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 65A (Tc) 10V 40mOhm @ 32.5A, 10V 5V @ 2.1mA 153 nC @ 10 V ±30V 5875 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    SICW025N065H-BP

    SICW025N065H-BP

    SIC MOSFET,TO-247AB

    Micro Commercial Co

    		 360 -
    RFQ

    -

    		 - TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 107A (Tc) 18V 30mOhm @ 50A, 18V 4.5V @ 50mA 275 nC @ 18 V +22V, -10V 5740 pF @ 400 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AB
    STH12N120K5-2AG

    STH12N120K5-2AG

    AUTOMOTIVE-GRADE N-CHANNEL 1200

    STMicroelectronics

    		 998 -
    RFQ
    		STH12N120K5-2AG

    Datenblatt

         		MDmesh™ K5 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1200 V 12A (Tc) 10V 690mOhm @ 6A, 10V 5V @ 100µA 44.2 nC @ 10 V ±30V 1370 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount H2PAK-2
    S2M0040120D-1

    S2M0040120D-1

    MOSFET SILICON CARBIDE SIC 1200V

    SMC Diode Solutions

    		 299 -
    RFQ
    		S2M0040120D-1

    Datenblatt

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 55A (Tj) 20V 52mOhm @ 40A, 20V 4V @ 10mA 92.1 nC @ 20 V +20V, -5V 1904 pF @ 1000 V - 348W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AD
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