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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IMDQ75R027M1HXUMA1

    IMDQ75R027M1HXUMA1

    IMDQ75R027M1HXUMA1

    Infineon Technologies

    		 708 -
    RFQ
    		IMDQ75R027M1HXUMA1

    Datenblatt

         		CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 64A (Tj) 15V, 20V 25mOhm @ 24.5A, 20V 5.6V @ 8.8mA 49 nC @ 18 V +20V, -2V 1668 pF @ 500 V - 273W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HDSOP-22-1
    NVH4L070N120M3S

    NVH4L070N120M3S

    SILICON CARBIDE (SIC) MOSFET-ELI

    onsemi

    		 222 -
    RFQ
    		NVH4L070N120M3S

    Datenblatt

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 34A (Tc) 18V 87mOhm @ 15A, 18V 4.4V @ 7mA 57 nC @ 18 V +22V, -10V 1230 pF @ 800 V - 160W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
    PJMK040N60EC_T0_00201

    PJMK040N60EC_T0_00201

    600V/ 40M / 71A/ EASY TO DRIVER

    Panjit International Inc.

    		 690 -
    RFQ
    		PJMK040N60EC_T0_00201

    Datenblatt

         		- - Tube Active - - - - - - - - - - - - - - - - -
    AOK065V65X2

    AOK065V65X2

    MOSFET N-CH 650V 40.3A TO247

    Alpha & Omega Semiconductor Inc.

    		 225 -
    RFQ
    		AOK065V65X2

    Datenblatt

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 40.3A (Tc) 15V 85mOhm @ 10A, 15V 3.5V @ 10mA 58.8 nC @ 15 V +15V, -5V 1762 pF @ 400 V - 187.5W (Ta) -55°C ~ 175°C (TJ) - - Through Hole TO-247
    DIW170SIC070

    DIW170SIC070

    SIC MOSFET, TO-247-3L, N, 70A, 1

    Diotec Semiconductor

    		 150 -
    RFQ
    		DIW170SIC070

    Datenblatt

         		- TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1700 V 70A (Tc) 20V 22.3mOhm @ 40A, 20V 4V @ 10mA 80 nC @ 18 V +20V, -5V 6000 pF @ 1200 V - 416W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247
    IPQC60R017S7XTMA1

    IPQC60R017S7XTMA1

    MOSFET

    Infineon Technologies

    		 750 -
    RFQ
    		IPQC60R017S7XTMA1

    Datenblatt

         		CoolMOS™ S7 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 12V 17mOhm @ 29A, 12V 4.5V @ 1.89mA 196 nC @ 12 V ±20V 7370 pF @ 300 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22
    IPDQ60R017S7XTMA1

    IPDQ60R017S7XTMA1

    MOSFET

    Infineon Technologies

    		 695 -
    RFQ
    		IPDQ60R017S7XTMA1

    Datenblatt

         		CoolMOS™ S7 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 12V 17mOhm @ 29A, 12V 4.5V @ 1.89mA 196 nC @ 12 V ±20V 7370 pF @ 300 V - 500W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22-1
    SIHG64N65E-GE3

    SIHG64N65E-GE3

    MOSFET N-CH 650V 64A TO247AC

    Vishay Siliconix

    		 481 -
    RFQ
    		SIHG64N65E-GE3

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 64A (Tc) 10V 47mOhm @ 32A, 10V 4V @ 250µA 369 nC @ 10 V ±30V 7497 pF @ 100 V - 520W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
    SCT4026DWATL

    SCT4026DWATL

    750V, 51A, 7-PIN SMD, TRENCH-STR

    Rohm Semiconductor

    		 946 -
    RFQ
    		SCT4026DWATL

    Datenblatt

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 51A (Tc) 18V 34mOhm @ 29A, 18V 4.8V @ 15.4mA 94 nC @ 18 V +21V, -4V 2320 pF @ 500 V - - 175°C (TJ) - - Surface Mount TO-263-7LA
    AIMBG75R027M1HXTMA1

    AIMBG75R027M1HXTMA1

    AIMBG75R027M1HXTMA1

    Infineon Technologies

    		 1,183 -
    RFQ

    -

    		 CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 64A (Tj) 15V, 20V 25mOhm @ 24.5A, 20V 5.6V @ 8.8mA 49 nC @ 18 V +23V, -5V 1668 pF @ 500 V - 273W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-7
    AOK065V120X2Q

    AOK065V120X2Q

    1200V SILICON CARBIDE MOSFET

    Alpha & Omega Semiconductor Inc.

    		 240 -
    RFQ
    		AOK065V120X2Q

    Datenblatt

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 40.3A (Tc) 15V 85mOhm @ 10A, 15V 3.5V @ 10mA 62.3 nC @ 15 V +15V, -5V 1716 pF @ 800 V - 187.5W (Tj) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247
    NVH4L040N65S3F

    NVH4L040N65S3F

    MOSFET N-CH 650V 65A TO247-4

    onsemi

    		 448 -
    RFQ
    		NVH4L040N65S3F

    Datenblatt

         		SuperFET® III, FRFET® TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 65A (Tc) - 40mOhm @ 32.5A, 10V 5V @ 2.1mA 160 nC @ 10 V ±30V 5665 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
    G3F40MT12J-TR

    G3F40MT12J-TR

    1200V 40M TO-263-7 G3F SIC MOSFE

    GeneSiC Semiconductor

    		 800 -
    RFQ

    -

    		 - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 59A (Tc) 18V 53mOhm @ 20A, 18V 4.3V @ 16mA 86 nC @ 18 V +22V, -10V 2023 pF @ 800 V - 270W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
    E4M0045075K1

    E4M0045075K1

    MOSFETS AUTOMOTIVE 139W 3.8V NC

    Wolfspeed, Inc.

    		 254 -
    RFQ
    		E4M0045075K1

    Datenblatt

         		E TO-247-4 Bulk Active N-Channel SiCFET (Silicon Carbide) 750 V 42A (Tc) 15V 60mOhm @ 17.6A, 15V 3.8V @ 4.84mA 65 nC @ 15 V +19V, -8V 1606 pF @ 500 V - 139W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
    IMW65R026M2HXKSA1

    IMW65R026M2HXKSA1

    IMW65R026M2HXKSA1

    Infineon Technologies

    		 390 -
    RFQ
    		IMW65R026M2HXKSA1

    Datenblatt

         		CoolSiC™ TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 64A (Tc) 15V, 20V 24mOhm @ 34.5A, 20V 5.6V @ 7mA 42 nC @ 18 V +23V, -7V 1499 pF @ 400 V - 227W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-3-40
    S3M0040120J

    S3M0040120J

    MOSFET SILICON CARBIDE SIC 1200V

    SMC Diode Solutions

    		 300 -
    RFQ
    		S3M0040120J

    Datenblatt

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 76A (Tc) 18V 52mOhm @ 40A, 18V 4V @ 16mA 143 nC @ 18 V +20V, -8V 2844 pF @ 1000 V - 600W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
    TSG65N110CE RVG

    TSG65N110CE RVG

    650V, 18A, PDFN88, E-MODE GAN TR

    Taiwan Semiconductor Corporation

    		 3,000 -
    RFQ
    		TSG65N110CE RVG

    Datenblatt

         		* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    AIMDQ75R027M1HXUMA1

    AIMDQ75R027M1HXUMA1

    AIMDQ75R027M1HXUMA1

    Infineon Technologies

    		 671 -
    RFQ

    -

    		 CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 64A (Tj) 15V, 20V 25mOhm @ 24.5A, 20V 5.6V @ 8.8mA 49 nC @ 18 V +23V, -5V 1668 pF @ 500 V - 273W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
    G3F40MT12K

    G3F40MT12K

    1200V 40M TO-247-4 G3F SIC MOSFE

    GeneSiC Semiconductor

    		 552 -
    RFQ

    -

    		 - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 55A (Tc) 18V 53mOhm @ 20A, 18V 4.3V @ 16mA 86 nC @ 18 V +22V, -10V 2023 pF @ 800 V - 234W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
    AOK033V120X2

    AOK033V120X2

    1200V SILICON CARBIDE MOSFET

    Alpha & Omega Semiconductor Inc.

    		 208 -
    RFQ
    		AOK033V120X2

    Datenblatt

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 68A (Tc) 15V 43mOhm @ 20A, 15V 2.8V @ 17.5mA 104 nC @ 15 V +15V, -5V 2908 pF @ 800 V - 300W (Ta) -55°C ~ 175°C (TJ) - - Through Hole TO-247
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