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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    AOM033V120X2Q

    AOM033V120X2Q

    1200V SILICON CARBIDE MOSFET

    Alpha & Omega Semiconductor Inc.

    		 150 -
    RFQ
    		AOM033V120X2Q

    Datenblatt

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 68A (Tc) 15V 43mOhm @ 20A, 15V 2.8V @ 17.5mA 104 nC @ 15 V +18V, -8V 2908 pF @ 800 V - 300W (Tj) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
    NVHL045N065SC1

    NVHL045N065SC1

    SIC MOS TO247-3L 650V

    onsemi

    		 442 -
    RFQ
    		NVHL045N065SC1

    Datenblatt

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 66A (Tc) 15V, 18V 50mOhm @ 25A, 18V 4.3V @ 8mA 105 nC @ 18 V +22V, -8V 1870 pF @ 325 V - 291W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-3
    E4M0045075J2-TR

    E4M0045075J2-TR

    MOSFETS 1606 PF 172W 3.8V 62 NC

    Wolfspeed, Inc.

    		 426 -
    RFQ
    		E4M0045075J2-TR

    Datenblatt

         		E TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 46A (Tc) 15V 60mOhm @ 17.6A, 15V 3.8V @ 4.84mA 62 nC @ 15 V +19V, -8V 1606 pF @ 500 V - 172W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
    IXFK420N10T

    IXFK420N10T

    MOSFET N-CH 100V 420A TO264AA

    Littelfuse Inc.

    		 224 -
    RFQ
    		IXFK420N10T

    Datenblatt

         		HiPerFET™, Trench TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 100 V 420A (Tc) 10V 2.6mOhm @ 60A, 10V 5V @ 8mA 670 nC @ 10 V ±20V 47000 pF @ 25 V - 1670W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-264AA (IXFK)
    G3F34MT12J-TR

    G3F34MT12J-TR

    1200V 34M TO-263-7 G3F SIC MOSFE

    GeneSiC Semiconductor

    		 800 -
    RFQ

    -

    		 - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 68A (Tc) 18V 45mOhm @ 26A, 18V 4.3V @ 18mA 104 nC @ 18 V +22V, -10V 2418 pF @ 800 V - 300W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
    G3F25MT06J-TR

    G3F25MT06J-TR

    650V 20M TO-263-7 G3F SIC MOSFET

    GeneSiC Semiconductor

    		 800 -
    RFQ

    -

    		 - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 108A (Tc) 15V, 18V 27.5mOhm @ 35A, 18V 4.3V @ 15mA 108 nC @ 18 V +22V, -10V 2939 pF @ 400 V - 343W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
    SICW028N120A4-BP

    SICW028N120A4-BP

    MOSFET N-CH 1200 V 80A TO247-4

    Micro Commercial Co

    		 1,800 -
    RFQ
    		SICW028N120A4-BP

    Datenblatt

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 80A (Tc) 16V, 20V 30mOhm @ 40A, 20V 3V @ 15mA 168 nC @ 18 V +22V, -5V 3570 pF @ 1000 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
    G3F34MT12K

    G3F34MT12K

    1200V 34M TO-247-4 G3F SIC MOSFE

    GeneSiC Semiconductor

    		 600 -
    RFQ

    -

    		 - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 63A (Tc) 18V 45mOhm @ 26A, 18V 4.3V @ 18mA 104 nC @ 18 V +22V, -10V 2418 pF @ 800 V - 263W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
    AIMDQ75R020M1HXUMA1

    AIMDQ75R020M1HXUMA1

    AIMDQ75R020M1HXUMA1

    Infineon Technologies

    		 670 -
    RFQ

    -

    		 CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 81A (Tj) 15V, 20V 18mOhm @ 32.5A, 20V 5.6V @ 11.7mA 67 nC @ 18 V +23V, -5V 2217 pF @ 500 V - 326W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
    AOM033V120X2

    AOM033V120X2

    1200V SILICON CARBIDE MOSFET

    Alpha & Omega Semiconductor Inc.

    		 234 -
    RFQ
    		AOM033V120X2

    Datenblatt

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 68A (Tc) 15V 43mOhm @ 20A, 15V 2.8V @ 17.5mA 104 nC @ 15 V +15V, -5V 2908 pF @ 800 V - 300W (Ta) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
    S3M0025120K

    S3M0025120K

    MOSFET SILICON CARBIDE SIC 1200V

    SMC Diode Solutions

    		 240 -
    RFQ
    		S3M0025120K

    Datenblatt

         		- TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 77A (Tc) 18V 32mOhm @ 48A, 18V 4V @ 20mA 175 nC @ 18 V +22V, -8V 3519 pF @ 1000 V - 517W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
    GAN039-650NBBHP

    GAN039-650NBBHP

    650 V, 33 MOHM GALLIUM NITRIDE (

    Nexperia USA Inc.

    		 935 -
    RFQ

    -

    		 - 12-BESOP (0.370", 9.40mm Width), Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 60A (Tc) 10V 39mOhm @ 32A, 10V 4.8V @ 1mA 30 nC @ 10 V ±20V 1500 pF @ 400 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount CCPAK1212
    NVH4L023N065M3S

    NVH4L023N065M3S

    SIC MOS TO247-4L 23MOHM 650V M3S

    onsemi

    		 450 -
    RFQ

    -

    		 - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 67A (Tc) 15V, 18V 33mOhm @ 20A, 18V 4V @ 10mA 69 nC @ 18 V +22V, -8V 1952 pF @ 400 V - 245W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
    IMZA75R020M1HXKSA1

    IMZA75R020M1HXKSA1

    SILICON CARBIDE MOSFET

    Infineon Technologies

    		 237 -
    RFQ
    		IMZA75R020M1HXKSA1

    Datenblatt

         		CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 75A (Tj) 15V, 20V 18mOhm @ 32.5A, 20V 5.6V @ 11.7mA 67 nC @ 18 V +23V, -5V 2217 pF @ 500 V - 278W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4
    G3F25MT06K

    G3F25MT06K

    650V 20M TO-247-4 G3F SIC MOSFET

    GeneSiC Semiconductor

    		 595 -
    RFQ

    -

    		 - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 100A (Tc) 15V, 18V 27.5mOhm @ 35A, 18V 4.3V @ 15mA 108 nC @ 18 V +22V, -10V 2939 pF @ 400 V - 294W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
    NVBG040N120M3S

    NVBG040N120M3S

    SILICON CARBIDE (SIC) MOSFET-ELI

    onsemi

    		 760 -
    RFQ
    		NVBG040N120M3S

    Datenblatt

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 57A (Tc) 18V 54mOhm @ 20A, 18V 4.4V @ 10mA 75 nC @ 18 V +22V, -10V 1700 pF @ 800 V - 263W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK-7
    AIMZHN120R040M1TXKSA1

    AIMZHN120R040M1TXKSA1

    SIC_DISCRETE

    Infineon Technologies

    		 240 -
    RFQ
    		AIMZHN120R040M1TXKSA1

    Datenblatt

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 55A (Tc) 18V, 20V 50mOhm @ 20A, 20V 5.1V @ 6.4mA 43 nC @ 20 V +23V, -5V 1264 pF @ 800 V - 268W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4-14
    G3F25MT12J-TR

    G3F25MT12J-TR

    1200V 25M TO-263-7 G3F SIC MOSFE

    GeneSiC Semiconductor

    		 800 -
    RFQ

    -

    		 - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 87A (Tc) 18V 34mOhm @ 34A, 18V 4.3V @ 24mA 128 nC @ 18 V +22V, -10V 3325 pF @ 800 V - 362W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
    IMT40R011M2HXTMA1

    IMT40R011M2HXTMA1

    SIC-MOS

    Infineon Technologies

    		 1,927 -
    RFQ
    		IMT40R011M2HXTMA1

    Datenblatt

         		CoolSiC™ 8-PowerSFN Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 400 V 13.4A (Ta), 144A (Tc) 15V, 18V 14.4mOhm @ 37.1A, 18V 5.6V @ 13.3mA 85 nC @ 18 V +23V, -7V 3770 pF @ 200 V - 3.8W (Ta), 429W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8-2
    SCT3030ARC15

    SCT3030ARC15

    650V, 70A, 4-PIN THD, TRENCH-STR

    Rohm Semiconductor

    		 386 -
    RFQ
    		SCT3030ARC15

    Datenblatt

         		- TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 70A (Tc) 18V 39mOhm @ 27A, 18V 5.6V @ 13.3mA 104 nC @ 18 V +22V, -4V 1526 pF @ 500 V - 262W 175°C (TJ) - - Through Hole TO-247-4L
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