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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    S3M0016120B

    S3M0016120B

    MOSFET SILICON CARBIDE SIC 1200V

    SMC Diode Solutions

    		 300 -
    RFQ
    		S3M0016120B

    Datenblatt

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 106A (Tc) 18V 23mOhm @ 75A, 18V 4V @ 30mA 287 nC @ 18 V +22V, -8V 5251 pF @ 1000 V - 576W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
    IMZA65R010M2HXKSA1

    IMZA65R010M2HXKSA1

    IMZA65R010M2HXKSA1

    Infineon Technologies

    		 400 -
    RFQ
    		IMZA65R010M2HXKSA1

    Datenblatt

         		CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 144A (Tc) 15V, 20V 9.1mOhm @ 92.1A, 20V 5.6V @ 18.7mA 112 nC @ 18 V +23V, -7V 4001 pF @ 400 V - 440W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-8
    E4M0025075J2-TR

    E4M0025075J2-TR

    MOSFETS 3055 PF 281W 3.8V 114 NC

    Wolfspeed, Inc.

    		 524 -
    RFQ
    		E4M0025075J2-TR

    Datenblatt

         		E TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 84A (Tc) 15V 34mOhm @ 33.5A, 15V 3.8V @ 9.22mA 114 nC @ 15 V +19V, -8V 3055 pF @ 500 V - 281W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
    E4M0025075K1

    E4M0025075K1

    MOSFETS AUTOMOTIVE 262W 3.8V NC

    Wolfspeed, Inc.

    		 286 -
    RFQ
    		E4M0025075K1

    Datenblatt

         		E TO-247-4 Bulk Active N-Channel SiCFET (Silicon Carbide) 750 V 80A (Tc) 15V 34mOhm @ 33.5A, 15V 3.8V @ 9.22mA 119 nC @ 15 V +19V, -8V 3055 pF @ 500 V - 262W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
    AIMBG120R020M1XTMA1

    AIMBG120R020M1XTMA1

    SIC_DISCRETE

    Infineon Technologies

    		 864 -
    RFQ
    		AIMBG120R020M1XTMA1

    Datenblatt

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 104A (Tc) 18V, 20V 25mOhm @ 43A, 20V 5.1V @ 15mA 82 nC @ 20 V +23V, -5V 2667 pF @ 800 V - 468W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-7-12
    IMZC120R012M2HXKSA1

    IMZC120R012M2HXKSA1

    IMZC120R012M2HXKSA1

    Infineon Technologies

    		 215 -
    RFQ
    		IMZC120R012M2HXKSA1

    Datenblatt

         		CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 129A (Tc) 15V, 18V 12mOhm @ 57A, 18V 5.1V @ 17.8mA 124 nC @ 18 V +23V, -7V 4050 pF @ 800 V - 480W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-17
    APT1201R2BFLLG

    APT1201R2BFLLG

    MOSFET N-CH 1200V 12A TO247

    Microchip Technology

    		 274 -
    RFQ
    		APT1201R2BFLLG

    Datenblatt

         		POWER MOS 7® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 12A (Tc) - 1.25Ohm @ 6A, 10V 5V @ 1mA 100 nC @ 10 V - 2540 pF @ 25 V - - - - - Through Hole TO-247 [B]
    IXFX32N80Q3

    IXFX32N80Q3

    MOSFET N-CH 800V 32A PLUS247-3

    Littelfuse Inc.

    		 600 -
    RFQ
    		IXFX32N80Q3

    Datenblatt

         		HiPerFET™, Q3 Class TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 800 V 32A (Tc) 10V 270mOhm @ 16A, 10V 6.5V @ 4mA 140 nC @ 10 V ±30V 6940 pF @ 25 V - 1000W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS247™-3
    G3F18MT12J-TR

    G3F18MT12J-TR

    1200V 18M TO-263-7 G3F SIC MOSFE

    GeneSiC Semiconductor

    		 800 -
    RFQ

    -

    		 - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 122A (Tc) 18V 25mOhm @ 45A, 18V 4.3V @ 35mA 212 nC @ 18 V +22V, -10V 4962 pF @ 800 V - 526W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
    C3M0021120K1

    C3M0021120K1

    MOSFET N-CH 1200V 104A TO247-4L

    Wolfspeed, Inc.

    		 869 -
    RFQ
    		C3M0021120K1

    Datenblatt

         		- TO-247-4 Bulk Active N-Channel SiCFET (Silicon Carbide) 1200 V 104A (Tc) 15V 29mOhm @ 62.1A, 15V 3.8V @ 17.1mA 177 nC @ 15 V +19V, -8V 5100 pF @ 1000 V - 405W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
    AOM020V120X2Q

    AOM020V120X2Q

    1200V SILICON CARBIDE MOSFET

    Alpha & Omega Semiconductor Inc.

    		 217 -
    RFQ
    		AOM020V120X2Q

    Datenblatt

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 89A (Tc) 15V 28mOhm @ 27A, 15V 2.8V @ 27mA 166 nC @ 15 V +15V, -5V 5180 pF @ 800 V - 348W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
    TW030Z120C,S1F

    TW030Z120C,S1F

    G3 1200V SIC-MOSFET TO-247-4L 3

    Toshiba Semiconductor and Storage

    		 105 -
    RFQ
    		TW030Z120C,S1F

    Datenblatt

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 60A (Tc) 18V 41mOhm @ 30A, 18V 5V @ 13mA 82 nC @ 18 V +25V, -10V 2925 pF @ 800 V - 249W (Tc) 175°C - - Through Hole TO-247-4L(X)
    G3F18MT12K

    G3F18MT12K

    1200V 18M TO-247-4 G3F SIC MOSFE

    GeneSiC Semiconductor

    		 595 -
    RFQ

    -

    		 - - Tube Active - - - - - - - - - - - - - - - - -
    E3M0032120J2-TR

    E3M0032120J2-TR

    32m, 1200V SiC FET, TO-263-7 XL

    Wolfspeed, Inc.

    		 729 -
    RFQ
    		E3M0032120J2-TR

    Datenblatt

         		E TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 74A (Tc) 15V 43mOhm @ 38.9A, 15V 3.8V @ 10.7mA 108 nC @ 15 V +19V, -8V 3460 pF @ 1000 V - 341W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
    SCTH100N65G2-7AG

    SCTH100N65G2-7AG

    SICFET N-CH 650V 95A H2PAK-7

    STMicroelectronics

    		 876 -
    RFQ
    		SCTH100N65G2-7AG

    Datenblatt

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 95A (Tc) 18V 26mOhm @ 50A, 18V 5V @ 5mA 162 nC @ 18 V +22V, -10V 3315 pF @ 520 V - 360W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount H2PAK-7
    C3M0025065J1-TR

    C3M0025065J1-TR

    SIC, MOSFET 25 M, 650V TO-263-7X

    Wolfspeed, Inc.

    		 780 -
    RFQ
    		C3M0025065J1-TR

    Datenblatt

         		C3M™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 80A (Tc) 15V 34mOhm @ 33.5A, 15V 3.6V @ 9.22mA 109 nC @ 15 V +19V, -8V 2980 pF @ 400 V - 271W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount TO-263-7
    NVHL015N065SC1

    NVHL015N065SC1

    SIC MOS TO247-3L 650V

    onsemi

    		 447 -
    RFQ
    		NVHL015N065SC1

    Datenblatt

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 163A (Tc) 15V, 18V 18mOhm @ 75A, 12V 4.3V @ 25mA 283 nC @ 18 V +22V, -8V 4790 pF @ 325 V - 643W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-3
    E3M0021120J2-TR

    E3M0021120J2-TR

    21m, 1200V SiC FET, TO-263-7 XL

    Wolfspeed, Inc.

    		 488 -
    RFQ
    		E3M0021120J2-TR

    Datenblatt

         		E TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 114A (Tc) 15V 29mOhm @ 62.12A, 15V 3.8V @ 17.1mA 169 nC @ 15 V +19V, -8V 5100 pF @ 1000 V - 500W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
    AIMZA75R008M1HXKSA1

    AIMZA75R008M1HXKSA1

    AUTOMOTIVE_SICMOS

    Infineon Technologies

    		 240 -
    RFQ
    		AIMZA75R008M1HXKSA1

    Datenblatt

         		CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 750 V 163A (Tc) 15V, 20V 7.2mOhm @ 90.3A, 20V 5.6V @ 32.4mA 178 nC @ 18 V +23V, -5V 6137 pF @ 500 V - 517W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4-U02
    IMZA75R008M1HXKSA1

    IMZA75R008M1HXKSA1

    SILICON CARBIDE MOSFET

    Infineon Technologies

    		 240 -
    RFQ
    		IMZA75R008M1HXKSA1

    Datenblatt

         		CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 750 V 163A (Tc) 15V, 20V 7.2mOhm @ 90.3A, 20V 5.6V @ 32.4mA 178 nC @ 500 V +23V, -5V 6137 pF @ 500 V - 517W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-U02
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