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0755-82798135FETs, MOSFETs
FETs und MOSFETs
TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.
Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.
Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.
| Foto | Hersteller-Teilenr. | Verfügbarkeit | Preis | Menge | Datenblatt | Serie | Verpackung/Gehäuse | Verpackung | Produktstatus | FET-Typ | Technologie | Drain-Source-Spannung (Vdss) | Strom - Dauer-Drain (Id) @ 25 °C | Antriebsspannung (Max Rds Ein, Min Rds Ein) | Rds Ein (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate-Ladung (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Leistungsverlust (Max) | Betriebstemperatur | Klasse | Qualifizierung | Montageart | Lieferant Gerätepaket |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NCV81342CBATXGMOSFET |
1,000 | - |
|
- |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IPD030N03LF2SATMA1MOSFET N-CH 30V 160A DPAK |
2,000 | - |
|
Datenblatt |
StrongIRFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 24A (Ta), 99A (Tc) | 4.5V, 10V | 3.05mOhm @ 60A, 10V | 2.35V @ 40µA | 50 nC @ 10 V | ±20V | 2200 pF @ 15 V | - | 3W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-34 |
|
|
APT60M75L2FLLGMOSFET N-CH 600V 73A 264 MAX |
82 | - |
|
Datenblatt |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 73A (Tc) | 10V | 75mOhm @ 36.5A, 10V | 5V @ 5mA | 195 nC @ 10 V | ±30V | 8930 pF @ 25 V | - | 893W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | 264 MAX™ [L2] |
|
C3M0016120K1MOSFET N-CH 1200V 125A TO247-4L |
325 | - |
|
Datenblatt |
- | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 125A (Tc) | 15V | 22mOhm @ 80.28A, 15V | 3.8V @ 22.08mA | 223 nC @ 15 V | +19V, -8V | 6922 pF @ 1000 V | - | 483W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
|
|
APL502B2GMOSFET N-CH 500V 58A T-MAX |
106 | - |
|
Datenblatt |
- | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 58A (Tc) | 15V | 90mOhm @ 29A, 12V | 4V @ 2.5mA | - | ±30V | 9000 pF @ 25 V | - | 730W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
|
DIW120SIC022-AQSIC MOSFET, TO-247-3L, N, 120A, |
150 | - |
|
Datenblatt |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 120A (Tc) | 18V | 22.3mOhm @ 75A, 18V | 4V @ 23.5mA | 269 nC @ 18 V | +18V, -4V | 4817 pF @ 1000 V | - | 340W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247 |
|
DIF120SIC022-AQSIC MOSFET, TO-247-4L, N, 120A, |
150 | - |
|
Datenblatt |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 120A (Tc) | 18V | 22.3mOhm @ 75A, 18V | 4V @ 23.5mA | 269 nC @ 18 V | +18V, -4V | 4817 pF @ 1000 V | - | 340W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
|
TW015Z120C,S1FG3 1200V SIC-MOSFET TO-247-4L 1 |
68 | - |
|
Datenblatt |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 100A (Tc) | 18V | 21mOhm @ 50A, 18V | 5V @ 11.7mA | 158 nC @ 18 V | +25V, -10V | 6000 pF @ 800 V | - | 431W (Tc) | 175°C | - | - | Through Hole | TO-247-4L(X) |
|
IXFN55N120SKSIC AND MULTICHIP DISCRETE |
182 | - |
|
Datenblatt |
- | SOT-227-4, miniBLOC | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 54A (Tc) | 15V | 42mOhm @ 40A, 15V | 3.6V @ 12mA | 107 nC @ 15 V | +15V, -4V | 3360 pF @ 1000 V | - | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SOT-227B |
|
DIW120SIC023-AQMOSFET TO-247-3L N 130A 1200V |
705 | - |
|
Datenblatt |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 125A (Tc) | 18V | 23mOhm @ 75A, 18V | 2.9V @ 250µA | 45 nC @ 18 V | - | 6150 pF @ 1000 V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247 |
|
DF17MR12W1M1HFB68BPSA1LOW POWER EASY |
33 | - |
|
Datenblatt |
EasyPACK™ | Module | Tray | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 45A (Tj) | 15V, 18V | 16.2mOhm @ 50A, 18V | 5.15V @ 20mA | 149 nC @ 18 V | +20V, -7V | 4400 pF @ 800 V | - | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
|
CDA04N30X1CGANFET 40V 30A .004 OHM 4DAPT |
88 | - |
|
- |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
CDA10N30X1CGANFET 100V 30A .009 OHM 4DAPT |
100 | - |
|
- |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
CDA10N05X2CGANFET 100V 5A .030 OHM 4DAPT |
100 | - |
|
- |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
CDA20N18X3CGANFET 200V 18A .025 OHM 4DAPT |
64 | - |
|
- |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
EPC7004BCGAN FET HEMT100V30A COTS 4FSMD-B |
41 | - |
|
Datenblatt |
- | 4-SMD, No Lead | Tray | Active | N-Channel | GaNFET (Gallium Nitride) | 100 V | 30A (Tc) | 5V | 13mOhm @ 30A, 5V | 2.5V @ 7mA | 7 nC @ 5 V | +6V, -4V | 797 pF @ 50 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-SMD |
|
EPC7001BCGAN FET HEMT 40V30A COTS 4FSMD-B |
146 | - |
|
- |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
EPC7002ACGAN FET HEMT 40V 8A COTS 4FSMD-A |
89 | - |
|
- |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
EPC7007BSHGAN FET HEMT 200V 18A 4UB |
50 | - |
|
Datenblatt |
eGaN®, FSMD-B | 4-SMD, No Lead | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 5V | 28mOhm @ 18A, 5V | 2.5V @ 3mA | 7 nC @ 5 V | +6V, -4V | 900 pF @ 100 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 4-SMD |
|
EPC7001BSHGAN FET HEMT 40V 30A 4FSMD-B |
50 | - |
|
- |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
