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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IXFX120N30P3

    IXFX120N30P3

    MOSFET N-CH 300V 120A PLUS247-3

    Littelfuse Inc.

    		 240 -
    RFQ
    		IXFX120N30P3

    Datenblatt

         		HiPerFET™, Polar3™ TO-247-3 Variant Tube Active N-Channel MOSFET (Metal Oxide) 300 V 120A (Tc) 10V 27mOhm @ 60A, 10V 5V @ 4mA 150 nC @ 10 V ±20V 8630 pF @ 25 V - 1130W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS247™-3
    IMBG40R011M2HXTMA1

    IMBG40R011M2HXTMA1

    SIC-MOS

    Infineon Technologies

    		 1,000 -
    RFQ
    		IMBG40R011M2HXTMA1

    Datenblatt

         		CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 400 V 13.4A (Ta), 133A (Tc) 15V, 18V 14.4mOhm @ 37.1A, 18V 5.6V @ 13.3mA 85 nC @ 18 V +23V, -7V 3770 pF @ 200 V - 3.8W (Ta), 429W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-11
    NTH4L018N075SC1

    NTH4L018N075SC1

    SIC MOS TO247-4L 750V

    onsemi

    		 400 -
    RFQ
    		NTH4L018N075SC1

    Datenblatt

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 140A (Tc) 15V, 18V 18mOhm @ 66A, 18V 4.3V @ 22mA 262 nC @ 18 V +22V, -8V 5010 pF @ 375 V - 500W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
    NVH4L060N090SC1

    NVH4L060N090SC1

    -

    onsemi

    		 1,349 -
    RFQ
    		NVH4L060N090SC1

    Datenblatt

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 900 V 46A (Tc) 15V, 18V 84mOhm @ 20A, 15V 4.3V @ 5mA 87 nC @ 15 V +22V, -8V 1770 pF @ 450 V - 221W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
    NVH4L045N065SC1

    NVH4L045N065SC1

    SIC MOS TO247-4L 650V

    onsemi

    		 422 -
    RFQ
    		NVH4L045N065SC1

    Datenblatt

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 55A (Tc) 15V, 18V 50mOhm @ 25A, 18V 4.3V @ 8mA 105 nC @ 18 V +22V, -8V 1870 pF @ 325 V - 187W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
    SCTW60N120G2

    SCTW60N120G2

    DISCRETE

    STMicroelectronics

    		 600 -
    RFQ
    		SCTW60N120G2

    Datenblatt

         		- TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 1200 V 60A (Tc) 18V 52mOhm @ 30A, 18V 5V @ 1mA 94 nC @ 8 V +18V, -5V 1969 pF @ 800 V - 389W (Tc) -55°C ~ 200°C (TJ) - - Through Hole HiP247™
    AIMZA75R027M1HXKSA1

    AIMZA75R027M1HXKSA1

    IGBT

    Infineon Technologies

    		 216 -
    RFQ
    		AIMZA75R027M1HXKSA1

    Datenblatt

         		CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 60A (Tj) 15V, 20V 25mOhm @ 24.5A, 20V 5.6V @ 8.8mA 49 nC @ 18 V +23V, -5V 1668 pF @ 500 V - 234W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4
    IPDQ60R020CFD7XTMA1

    IPDQ60R020CFD7XTMA1

    HIGH POWER_NEW

    Infineon Technologies

    		 750 -
    RFQ
    		IPDQ60R020CFD7XTMA1

    Datenblatt

         		CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 112A (Tc) 10V 20mOhm @ 42.4A, 10V 4.5V @ 2.12mA 186 nC @ 10 V ±20V 7395 pF @ 400 V - 543W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22-1
    SICW025N120H-BP

    SICW025N120H-BP

    SIC MOSFET,TO-247AB

    Micro Commercial Co

    		 360 -
    RFQ
    		SICW025N120H-BP

    Datenblatt

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 86A (Tc) 20V 33mOhm @ 40A, 20V 4.5V @ 50mA 305 nC @ 20 V +25V, -10V 4909 pF @ 800 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AB
    IMZC120R022M2HXKSA1

    IMZC120R022M2HXKSA1

    IMZC120R022M2HXKSA1

    Infineon Technologies

    		 240 -
    RFQ
    		IMZC120R022M2HXKSA1

    Datenblatt

         		CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 80A (Tc) 15V, 18V 22mOhm @ 32A, 18V 5.1V @ 10.1mA 71 nC @ 18 V +23V, -7V 2330 pF @ 800 V - 329W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-17
    SICW025N120H4-BP

    SICW025N120H4-BP

    SIC MOSFET,TO-247-4

    Micro Commercial Co

    		 350 -
    RFQ
    		SICW025N120H4-BP

    Datenblatt

         		- TO-247-4 Bulk Active N-Channel SiCFET (Silicon Carbide) 1200 V 86A (Tc) 20V 33mOhm @ 40A, 20V 4.5V @ 50mA 305 nC @ 20 V +20V, -5V 4909 pF @ 800 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
    STWA65N023M9

    STWA65N023M9

    N-CHANNEL 650 V, 19.9 MOHM TYP.,

    STMicroelectronics

    		 626 -
    RFQ
    		STWA65N023M9

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 95A (Tc) 10V 23mOhm @ 48A, 10V 4.2V @ 250µA 230 nC @ 10 V ±30V 8844 pF @ 400 V - 463W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 Long Leads
    C3M0120100J-TR

    C3M0120100J-TR

    SIC, MOSFET, 120M, 1000V, TO-263

    Wolfspeed, Inc.

    		 780 -
    RFQ
    		C3M0120100J-TR

    Datenblatt

         		C3M™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Last Time Buy N-Channel SiCFET (Silicon Carbide) 1000 V 22A (Tc) 15V 155mOhm @ 15A, 15V 3.5V @ 3mA 18 nC @ 15 V +15V, -4V 414 pF @ 600 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK-7
    E3M0075120J2-TR

    E3M0075120J2-TR

    75m, 1200V SiC FET, TO-263-7 XL

    Wolfspeed, Inc.

    		 498 -
    RFQ
    		E3M0075120J2-TR

    Datenblatt

         		E TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 34A (Tc) 15V 97.5mOhm @ 17.9A, 15V 3.8V @ 5mA 52 nC @ 15 V +19V, -8V 1480 pF @ 1000 V - 172W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
    C3M0060065J-TR

    C3M0060065J-TR

    SIC, MOSFET, 60M, 650V, TO-263-7

    Wolfspeed, Inc.

    		 409 -
    RFQ
    		C3M0060065J-TR

    Datenblatt

         		C3M™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 36A (Tc) 15V 79mOhm @ 13.2A, 15V 3.6V @ 5mA 46 nC @ 15 V +15V, -4V 1020 pF @ 600 V - 136W (Tc) -40°C ~ 175°C (TJ) - - Surface Mount TO-263-7
    G3R40MT12J-TR

    G3R40MT12J-TR

    1200V 40M TO-263-7 G3R SIC MOSFE

    GeneSiC Semiconductor

    		 630 -
    RFQ
    		G3R40MT12J-TR

    Datenblatt

         		G3R™, LoRing™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 66A (Tc) 15V, 18V 45mOhm @ 35A, 18V 2.7V @ 18mA 88 nC @ 15 V +22V, -10V 2897 pF @ 800 V - 330W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
    IMDQ75R020M1HXUMA1

    IMDQ75R020M1HXUMA1

    IMDQ75R020M1HXUMA1

    Infineon Technologies

    		 750 -
    RFQ
    		IMDQ75R020M1HXUMA1

    Datenblatt

         		CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 81A (Tj) 15V, 20V 18mOhm @ 32.5A, 20V 5.6V @ 11.7mA 67 nC @ 18 V +20V, -2V 2217 pF @ 500 V - 326W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HDSOP-22-1
    NVBG060N090SC1

    NVBG060N090SC1

    SIC MOS N-CH 900V 5.8A D2PAK-7

    onsemi

    		 2,081 -
    RFQ
    		NVBG060N090SC1

    Datenblatt

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 900 V 5.8A (Ta), 44A (Tc) 15V 84mOhm @ 20A, 15V 4.3V @ 5mA 88 nC @ 15 V +19V, -10V 1800 pF @ 450 V - 3.6W (Ta), 211W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK-7
    NSF040120D7A0J

    NSF040120D7A0J

    NSF040120D7A0/SOT8070/TO263-7L

    Nexperia USA Inc.

    		 800 -
    RFQ

    -

    		 - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    AIMBG75R020M1HXTMA1

    AIMBG75R020M1HXTMA1

    AIMBG75R020M1HXTMA1

    Infineon Technologies

    		 424 -
    RFQ

    -

    		 CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 81A (Tj) 15V, 20V 18mOhm @ 34.1A, 20V 5.6V @ 12.2mA 70 nC @ 18 V +23V, -5V 2326 pF @ 500 V - 326W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-7
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