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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    STWA60N043DM9

    STWA60N043DM9

    N-CHANNEL 600 V, 38 MOHM TYP., 5

    STMicroelectronics

    		 144 -
    RFQ
    		STWA60N043DM9

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 56A (Tc) 10V 43mOhm @ 28A, 10V 4.5V @ 250µA 78.6 nC @ 10 V ±30V 4675 pF @ 400 V - 312W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 Long Leads
    STW69N65M5

    STW69N65M5

    MOSFET N-CH 650V 58A TO247

    STMicroelectronics

    		 477 -
    RFQ
    		STW69N65M5

    Datenblatt

         		MDmesh™ V TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 58A (Tc) 10V 45mOhm @ 29A, 10V 5V @ 250µA 143 nC @ 10 V ±25V 6420 pF @ 100 V - 330W (Tc) 150°C (TJ) - - Through Hole TO-247-3
    MXB12R600DPHFC

    MXB12R600DPHFC

    MOSFET N-CH 600V 15A

    IXYS

    		 243 -
    RFQ
    		MXB12R600DPHFC

    Datenblatt

         		- ISOPLUSi5-PAK™ Tube Active N-Channel MOSFET (Metal Oxide) 650 V 13A (Tc) - - - - - - - - - - - Through Hole ISOPLUS i4-PAC™
    IPDQ65R029CFD7XTMA1

    IPDQ65R029CFD7XTMA1

    HIGH POWER_NEW

    Infineon Technologies

    		 734 -
    RFQ
    		IPDQ65R029CFD7XTMA1

    Datenblatt

         		CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 85A (Tc) 10V 29mOhm @ 35.8A, 10V 4.5V @ 1.79mA 139 nC @ 10 V ±20V 7149 pF @ 400 V - 463W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22-1
    NVH4L095N065SC1

    NVH4L095N065SC1

    SILICON CARBIDE (SIC) MOSFET, NC

    onsemi

    		 445 -
    RFQ
    		NVH4L095N065SC1

    Datenblatt

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 31A (Tc) 15V, 18V 105mOhm @ 12A, 18V 4.3V @ 4mA 50 nC @ 18 V +22V, -8V 956 pF @ 325 V - 129W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
    IMZA75R040M1HXKSA1

    IMZA75R040M1HXKSA1

    SILICON CARBIDE MOSFET

    Infineon Technologies

    		 235 -
    RFQ
    		IMZA75R040M1HXKSA1

    Datenblatt

         		CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 44A (Tj) 15V, 20V 37mOhm @ 16.6A, 20V 5.6V @ 6mA 34 nC @ 18 V +23V, -5V 1135 pF @ 500 V - 185W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4
    AIMCQ120R060M1TXTMA1

    AIMCQ120R060M1TXTMA1

    SIC_DISCRETE

    Infineon Technologies

    		 850 -
    RFQ

    -

    		 CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 44A (Tc) 18V, 20V 75mOhm @ 13A, 20V 5.1V @ 4.3mA 32 nC @ 20 V +25V, -10V 880 pF @ 800 V - 259W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
    G3F60MT06D

    G3F60MT06D

    650V 55M TO-247-3 G3F SIC MOSFET

    GeneSiC Semiconductor

    		 600 -
    RFQ

    -

    		 - - Tube Active - - - - - - - - - - - - - - - - -
    SCT4062KWATL

    SCT4062KWATL

    1200V, 24A, 7-PIN SMD, TRENCH-ST

    Rohm Semiconductor

    		 999 -
    RFQ
    		SCT4062KWATL

    Datenblatt

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 24A (Tc) 18V 81mOhm @ 12A, 18V 4.8V @ 6.45mA 64 nC @ 18 V +21V, -4V 1498 pF @ 800 V - - 175°C (TJ) - - Surface Mount TO-263-7LA
    SCT4045DWAHRTL

    SCT4045DWAHRTL

    750V, 31A, 7-PIN SMD, TRENCH-STR

    Rohm Semiconductor

    		 990 -
    RFQ
    		SCT4045DWAHRTL

    Datenblatt

         		- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 31A (Tc) 18V 59mOhm @ 17A, 18V 4.8V @ 8.89mA 63 nC @ 18 V +21V, -4V 1460 pF @ 500 V - - 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7LA
    SCT4062KWAHRTL

    SCT4062KWAHRTL

    1200V, 24A, 7-PIN SMD, TRENCH-ST

    Rohm Semiconductor

    		 956 -
    RFQ

    -

    		 - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 24A (Tc) 18V 81mOhm @ 12A, 18V 4.8V @ 6.45mA 64 nC @ 18 V +21V, -4V 1498 pF @ 800 V - 93W 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7LA
    MSC080SMA120SCT/R

    MSC080SMA120SCT/R

    MOSFET SIC 1200 V 80 MOHM PSMT

    Microchip Technology

    		 1,300 -
    RFQ

    -

    		 - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    MSC080SMA120SDT/R

    MSC080SMA120SDT/R

    MOSFET SIC 1200 V 80 MOHM TO-263

    Microchip Technology

    		 800 -
    RFQ
    		MSC080SMA120SDT/R

    Datenblatt

         		mSiC™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Bulk Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 35A (Tc) 20V 100mOhm @ 15A, 20V 2.8V @ 1mA 64 nC @ 20 V +23V, -10V 838 pF @ 1000 V - 182W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-268
    G3F60MT06K

    G3F60MT06K

    650V 55M TO-247-4 G3F SIC MOSFET

    GeneSiC Semiconductor

    		 600 -
    RFQ

    -

    		 - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 42A (Tc) 15V, 18V 75mOhm @ 15A, 18V 4.3V @ 7mA 45 nC @ 18 V +22V, -10V 1322 pF @ 400 V - 140W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4
    AIMZH120R160M1TXKSA1

    AIMZH120R160M1TXKSA1

    SIC_DISCRETE

    Infineon Technologies

    		 207 -
    RFQ
    		AIMZH120R160M1TXKSA1

    Datenblatt

         		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 17A (Tc) 18V, 20V 200mOhm @ 5A, 20V 5.1V @ 1.5mA 14 nC @ 20 V +23V, -5V 350 pF @ 800 V - 109W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-4-11
    IMZC120R040M2HXKSA1

    IMZC120R040M2HXKSA1

    IMZC120R040M2HXKSA1

    Infineon Technologies

    		 240 -
    RFQ
    		IMZC120R040M2HXKSA1

    Datenblatt

         		CoolSiC™ TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 48A (Tc) 15V, 18V 40mOhm @ 18A, 18V 5.1V @ 5.5mA 39 nC @ 18 V +23V, -7V 1310 pF @ 800 V - 218W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4-17
    G3F45MT06J-TR

    G3F45MT06J-TR

    650V 40M TO-263-7 G3F SIC MOSFET

    GeneSiC Semiconductor

    		 800 -
    RFQ

    -

    		 - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 56A (Tc) 15V, 18V 54mOhm @ 20A, 18V 4.3V @ 8mA 55 nC @ 18 V +22V, -10V 1640 pF @ 400 V - 187W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
    G3F65MT12J-TR

    G3F65MT12J-TR

    1200V 65M TO-263-7 G3F SIC MOSFE

    GeneSiC Semiconductor

    		 800 -
    RFQ

    -

    		 - TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 37A (Tc) 18V 86mOhm @ 15A, 18V 4.3V @ 10mA 55 nC @ 18 V +22V, -10V 1298 pF @ 800 V - 171W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
    R6061YNZ4C13

    R6061YNZ4C13

    NCH 600V 61A, TO-247, POWER MOSF

    Rohm Semiconductor

    		 588 -
    RFQ
    		R6061YNZ4C13

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 61A (Tc) 10V, 12V 60mOhm @ 13A, 12V 6V @ 3.5mA 76 nC @ 10 V ±30V 3700 pF @ 100 V - 568W (Tc) 150°C (TJ) - - Through Hole TO-247
    IPT60T022S7XTMA1

    IPT60T022S7XTMA1

    HIGH POWER_NEW

    Infineon Technologies

    		 218 -
    RFQ
    		IPT60T022S7XTMA1

    Datenblatt

         		CoolMOS™ 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 23A (Tj) 12V 22mOhm @ 23A, 12V 4.5V @ 1.43mA 150 nC @ 12 V ±20V 5640 pF @ 300 V - 390W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HSOF-8-2
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