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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IPZA60R037CM8XKSA1

    IPZA60R037CM8XKSA1

    IPZA60R037CM8XKSA1

    Infineon Technologies

    		 195 -
    RFQ

    -

    		 CoolMOS™ TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 64A (Tj) 10V 37mOhm @ 27A, 10V 4.7V @ 680µA 79 nC @ 10 V ±20V 3458 pF @ 400 V - 329W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-4-U02
    IPT65R040CFD7XTMA1

    IPT65R040CFD7XTMA1

    MOSFET N-CH 650V 8HSOF

    Infineon Technologies

    		 2,000 -
    RFQ
    		IPT65R040CFD7XTMA1

    Datenblatt

         		CoolMOS™ CFD7 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V - - - - - - - - - - - - Surface Mount PG-HSOF-8-2
    SCT3105KRHRC15

    SCT3105KRHRC15

    1200V, 24A, 4-PIN THD, TRENCH-ST

    Rohm Semiconductor

    		 440 -
    RFQ
    		SCT3105KRHRC15

    Datenblatt

         		- TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 24A (Tc) 18V 137mOhm @ 7.6A, 18V 5.6V @ 3.81mA 51 nC @ 18 V +22V, -4V 574 pF @ 800 V - 134W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
    IMTA65R040M2HXTMA1

    IMTA65R040M2HXTMA1

    SILICON CARBIDE MOSFET

    Infineon Technologies

    		 150 -
    RFQ
    		IMTA65R040M2HXTMA1

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    NVMFS5C604NWFT1G

    NVMFS5C604NWFT1G

    NFET SO8FL 60V 287A 1.2MO

    onsemi

    		 1,500 -
    RFQ
    		NVMFS5C604NWFT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10 V 40A (Ta), 287A (Tc) 4.5V, 10V 1.2mOhm @ 50A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 6400 pF @ 25 V - 3.9W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
    TK31V60W,LVQ

    TK31V60W,LVQ

    MOSFET N-CH 600V 30.8A 4DFN

    Toshiba Semiconductor and Storage

    		 2,455 -
    RFQ
    		TK31V60W,LVQ

    Datenblatt

         		DTMOSIV 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 98mOhm @ 15.4A, 10V 3.7V @ 1.5mA 86 nC @ 10 V ±30V 3000 pF @ 300 V - 240W (Tc) 150°C (TJ) - - Surface Mount 4-DFN-EP (8x8)
    IMT65R057M1HXUMA1

    IMT65R057M1HXUMA1

    SILICON CARBIDE MOSFET

    Infineon Technologies

    		 1,983 -
    RFQ
    		IMT65R057M1HXUMA1

    Datenblatt

         		CoolSiC™ 8-PowerSFN Tape & Reel (TR) Active - SiCFET (Silicon Carbide) 650 V - 18V - - - - - - - - - - Surface Mount PG-HSOF-8-2
    PSMNR90-80CSFJ

    PSMNR90-80CSFJ

    PSMNR90-80CSF/SOT8005A/CCPAK12

    Nexperia USA Inc.

    		 250 -
    RFQ
    		PSMNR90-80CSFJ

    Datenblatt

         		- 12-BESOP (0.370", 9.40mm Width), Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 505A (Tc) 10V 0.9mOhm @ 25A, 10V 4V @ 1mA 463 nC @ 10 V ±20V 32115 pF @ 40 V - 1.55kW (Tc) -55°C ~ 175°C (TJ) - - Surface Mount CCPAK1212i
    PSMNR90-80ASFJ

    PSMNR90-80ASFJ

    PSMNR90-80ASF/SOT8000A/CCPAK12

    Nexperia USA Inc.

    		 250 -
    RFQ
    		PSMNR90-80ASFJ

    Datenblatt

         		- 12-BESOP (0.370", 9.40mm Width), Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 505A (Tc) 10V 0.85mOhm @ 25A, 10V 4V @ 1mA 463 nC @ 10 V ±20V 32115 pF @ 40 V - 1.55kW (Tc) -55°C ~ 175°C (TJ) - - Surface Mount CCPAK1212
    SIHK055N60EF-T1GE3

    SIHK055N60EF-T1GE3

    E SERIES POWER MOSFET WITH FAST

    Vishay Siliconix

    		 2,040 -
    RFQ
    		SIHK055N60EF-T1GE3

    Datenblatt

         		EF 8-PowerBSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 58mOhm @ 16A, 10V 5V @ 250µA 90 nC @ 10 V ±30V 3667 pF @ 100 V - 236W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK®10 x 12
    PSMN1R0-100CSFJ

    PSMN1R0-100CSFJ

    PSMN1R0-100CSF/SOT8005A/CCPAK1

    Nexperia USA Inc.

    		 250 -
    RFQ
    		PSMN1R0-100CSFJ

    Datenblatt

         		- 12-BESOP (0.370", 9.40mm Width), Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 460A (Tc) 10V 1.04mOhm @ 25A, 10V 4V @ 1mA 539 nC @ 10 V ±20V 33624 pF @ 50 V - 1.55kW (Tc) -55°C ~ 175°C (TJ) - - Surface Mount CCPAK1212i
    E4M0060075K1

    E4M0060075K1

    MOSFETS AUTOMOTIVE 126W 3.8V NC

    Wolfspeed, Inc.

    		 440 -
    RFQ
    		E4M0060075K1

    Datenblatt

         		E TO-247-4 Bulk Active N-Channel SiCFET (Silicon Carbide) 750 V 35A (Tc) 15V 78mOhm @ 13.4A, 15V 3.8V @ 3.67mA 52 nC @ 15 V +19V, -8V 1203 pF @ 500 V - 126W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
    NTH4L032N065M3S

    NTH4L032N065M3S

    SIC MOS TO247-4L 32MOHM 650V M3S

    onsemi

    		 618 -
    RFQ

    -

    		 - TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 50A (Tc) 15V, 18V 44mOhm @ 15A, 18V 4V @ 7.5mA 55 nC @ 18 V +22V, -8V 1410 pF @ 400 V - 187W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
    PJMK074N60FRCH_T0_00201

    PJMK074N60FRCH_T0_00201

    600V/ 74M / 53A/ FAST RECOVERY Q

    Panjit International Inc.

    		 1,500 -
    RFQ
    		PJMK074N60FRCH_T0_00201

    Datenblatt

         		- - Tube Active - - - - - - - - - - - - - - - - -
    STWA67N60M6

    STWA67N60M6

    MOSFET N-CH 600V 52A TO247

    STMicroelectronics

    		 555 -
    RFQ
    		STWA67N60M6

    Datenblatt

         		MDmesh™ M6 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 52A (Tc) 10V 49mOhm @ 26A, 10V 4.75V @ 250µA 72.5 nC @ 10 V ±25V 3400 pF @ 100 V - 330W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247 Long Leads
    TSG65N190CR RVG

    TSG65N190CR RVG

    650V, 11A, PDFN56, E-MODE GAN TR

    Taiwan Semiconductor Corporation

    		 2,999 -
    RFQ
    		TSG65N190CR RVG

    Datenblatt

         		* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    TSM60NE069PW C0G

    TSM60NE069PW C0G

    600V, 51A, SINGLE N-CHANNEL HIGH

    Taiwan Semiconductor Corporation

    		 295 -
    RFQ
    		TSM60NE069PW C0G

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 51A (Tc) 10V, 12V 60mOhm @ 17A, 12V 6V @ 3.5mA 86 nC @ 10 V ±30V 3566 pF @ 300 V - 417W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247
    AIMDQ75R060M1HXUMA1

    AIMDQ75R060M1HXUMA1

    AUTOMOTIVE_SICMOS

    Infineon Technologies

    		 738 -
    RFQ

    -

    		 CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 34A (Tc) 15V, 20V 78mOhm @ 11.1A, 18V 5.6V @ 4mA 23 nC @ 18 V +23V, -5V 779 pF @ 500 V - 167W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
    E3M0160120J2-TR

    E3M0160120J2-TR

    160m 1200V SiC FET, TO-263-7 XL

    Wolfspeed, Inc.

    		 763 -
    RFQ
    		E3M0160120J2-TR

    Datenblatt

         		E TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 18A (Tc) 15V 208mOhm @ 8.5A, 15V 3.8V @ 2.33mA 28 nC @ 15 V +19V, -8V 730 pF @ 1000 V - 104W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
    NVHL050N65S3F

    NVHL050N65S3F

    SF3 FRFET AUTO 50MOHM TO-247

    onsemi

    		 450 -
    RFQ
    		NVHL050N65S3F

    Datenblatt

         		SuperFET® III, FRFET® TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 58A (Tc) 10V 50mOhm @ 29A, 10V 5V @ 1.7mA 123 nC @ 10 V ±30V 5404 pF @ 400 V - 403W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
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