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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IMT65R083M1HXUMA1

    IMT65R083M1HXUMA1

    SILICON CARBIDE MOSFET

    Infineon Technologies

    		 1,726 -
    RFQ
    		IMT65R083M1HXUMA1

    Datenblatt

         		CoolSiC™ 8-PowerSFN Tape & Reel (TR) Active - SiCFET (Silicon Carbide) 650 V - 18V - - - - - - - - - - Surface Mount PG-HSOF-8-2
    SIHP050N60E-GE3

    SIHP050N60E-GE3

    MOSFET N-CH 600V 51A TO220AB

    Vishay Siliconix

    		 926 -
    RFQ
    		SIHP050N60E-GE3

    Datenblatt

         		E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 51A (Tc) 10V 50mOhm @ 23A, 10V 5V @ 250µA 130 nC @ 10 V ±30V 3459 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    IPDQ60R037CM8XTMA1

    IPDQ60R037CM8XTMA1

    IPDQ60R037CM8XTMA1

    Infineon Technologies

    		 750 -
    RFQ

    -

    		 CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 65A (Tj) 10V 37mOhm @ 27A, 10V 4.7V @ 680µA 79 nC @ 10 V ±20V 3459 pF @ 400 V - 338W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22
    IMDQ75R060M1HXUMA1

    IMDQ75R060M1HXUMA1

    IMDQ75R060M1HXUMA1

    Infineon Technologies

    		 705 -
    RFQ
    		IMDQ75R060M1HXUMA1

    Datenblatt

         		CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 34A (Tc) 15V, 20V 55mOhm @ 11.1A, 20V 5.6V @ 4mA 23 nC @ 18 V +20V, -2V 779 pF @ 500 V - 167W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HDSOP-22-1
    NTBLS1D5N10MCTXG

    NTBLS1D5N10MCTXG

    MOSFET - POWER, SINGLE, N-CHANNE

    onsemi

    		 1,415 -
    RFQ
    		NTBLS1D5N10MCTXG

    Datenblatt

         		- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 32A (Ta), 312A (Tc) 10V 1.5mOhm @ 80A, 10V 4V @ 799µA 131 nC @ 10 V ±20V 10100 pF @ 50 V - 3.4W (Ta), 322W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-HPSOF
    IPDQ60T040S7AXTMA1

    IPDQ60T040S7AXTMA1

    AUTOMOTIVE_COOLMOS

    Infineon Technologies

    		 750 -
    RFQ
    		IPDQ60T040S7AXTMA1

    Datenblatt

         		CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 54A (Tc) 12V 40mOhm @ 13A, 12V 4.5V @ 780µA 83 nC @ 12 V ±20V 3128 pF @ 300 V - 272W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22-1
    TSM60NE084CIT C0G

    TSM60NE084CIT C0G

    600V, 21A, SINGLE N-CHANNEL HIGH

    Taiwan Semiconductor Corporation

    		 2,000 -
    RFQ

    -

    		 - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V, 12V 82mOhm @ 7A, 12V 6V @ 2.9mA 69 nC @ 10 V ±30V 2930 pF @ 300 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220TL
    IMLT65R050M2HXTMA1

    IMLT65R050M2HXTMA1

    SILICON CARBIDE MOSFET

    Infineon Technologies

    		 315 -
    RFQ
    		IMLT65R050M2HXTMA1

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    IPB029N15NM6ATMA1

    IPB029N15NM6ATMA1

    TRENCH >=100V

    Infineon Technologies

    		 1,830 -
    RFQ
    		IPB029N15NM6ATMA1

    Datenblatt

         		OptiMOS™ 6 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 24A (Ta), 165A (Tc) 8V, 15V 2.8mOhm @ 100A, 15V 4V @ 276µA 137 nC @ 10 V ±20V 9900 pF @ 75 V - 3.8W (Ta), 395W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
    NTBL060N065SC1

    NTBL060N065SC1

    M2 650V SIC MOSFET 60MOHM WITH T

    onsemi

    		 1,998 -
    RFQ
    		NTBL060N065SC1

    Datenblatt

         		- 8-PowerSFN Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 46A (Tc) 15V, 18V 70mOhm @ 20A, 18V 4.3V @ 6.5mA 74 nC @ 18 V +22V, -8V 1473 pF @ 325 V - 170W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-HPSOF
    PSMN1R8-80SSFJ

    PSMN1R8-80SSFJ

    NEXTPOWER 80/100V MOSFETS

    Nexperia USA Inc.

    		 1,771 -
    RFQ
    		PSMN1R8-80SSFJ

    Datenblatt

         		- SOT-1235 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 270A (Tc) 7V, 10V 1.8mOhm @ 25A, 10V 4V @ 1mA 222 nC @ 10 V ±20V 15319 pF @ 40 V - 341W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK88 (SOT1235)
    PSMN2R0-100SSFJ

    PSMN2R0-100SSFJ

    NEXTPOWER 80/100V MOSFETS

    Nexperia USA Inc.

    		 1,754 -
    RFQ
    		PSMN2R0-100SSFJ

    Datenblatt

         		- SOT-1235 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 267A (Tc) 7V, 10V 2.07mOhm @ 25A, 10V 4V @ 1mA 242 nC @ 10 V ±20V 16140 pF @ 50 V - 341W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK88 (SOT1235)
    SIHH085N60EF-T1GE3

    SIHH085N60EF-T1GE3

    EF SERIES POWER MOSFET WITH FAST

    Vishay Siliconix

    		 5,665 -
    RFQ
    		SIHH085N60EF-T1GE3

    Datenblatt

         		EF 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 85mOhm @ 17A, 10V 5V @ 250µA 63 nC @ 10 V ±30V 2733 pF @ 100 V - 184W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 8 x 8
    SIHK085N60EF-T1GE3

    SIHK085N60EF-T1GE3

    EF SERIES POWER MOSFET WITH FAST

    Vishay Siliconix

    		 2,000 -
    RFQ
    		SIHK085N60EF-T1GE3

    Datenblatt

         		EF 8-PowerBSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 85mOhm @ 17A, 10V 5V @ 250µA 63 nC @ 10 V ±30V 2733 pF @ 100 V - 184W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK®10 x 12
    GS-065-014-6-L-MR

    GS-065-014-6-L-MR

    GS-065-014-6-L-MR

    Infineon Technologies Canada Inc.

    		 241 -
    RFQ

    -

    		 - 8-PowerVDFN Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 700 V 15.2A (Tc) 6V 138mOhm @ 4A, 6V 2.6V @ 3mA 2.7 nC @ 6 V +7V, -10V 85 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount 8-PDFN (5x6)
    AIMBG75R060M1HXTMA1

    AIMBG75R060M1HXTMA1

    AIMBG75R060M1HXTMA1

    Infineon Technologies

    		 2,497 -
    RFQ

    -

    		 CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 34A (Tj) 15V, 20V 55mOhm @ 11.1A, 20V 5.6V @ 4mA 23 nC @ 18 V +23V, -5V 779 pF @ 500 V - 167W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-7
    AOT66518L

    AOT66518L

    MOSFET N-CH 150V 30A/120A TO220

    Alpha & Omega Semiconductor Inc.

    		 831 -
    RFQ
    		AOT66518L

    Datenblatt

         		AlphaSGT™ TO-220-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 30A (Ta), 120A (Tc) 8V, 10V 5mOhm @ 20A, 10V 3.7V @ 250µA 115 nC @ 10 V ±20V 6460 pF @ 75 V - 10W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
    AOB66914L

    AOB66914L

    N

    Alpha & Omega Semiconductor Inc.

    		 800 -
    RFQ
    		AOB66914L

    Datenblatt

         		AlphaSGT™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 45A (Ta), 120A (Tc) 6V, 10V 3.5mOhm @ 20A, 6V 3.5V @ 250µA 220 nC @ 10 V ±20V 12500 pF @ 50 V - 10W (Ta), 375W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
    IPZ60R060C7XKSA1

    IPZ60R060C7XKSA1

    MOSFET N-CH 600V 35A TO247-4

    Infineon Technologies

    		 229 -
    RFQ
    		IPZ60R060C7XKSA1

    Datenblatt

         		CoolMOS™ C7 TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 60mOhm @ 15.9A, 10V 4V @ 800µA 68 nC @ 10 V ±20V 2850 pF @ 400 V - 162W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-4
    IMW65R050M2HXKSA1

    IMW65R050M2HXKSA1

    SILICON CARBIDE MOSFET

    Infineon Technologies

    		 207 -
    RFQ
    		IMW65R050M2HXKSA1

    Datenblatt

         		CoolSiC™ Gen 2 TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 38A (Tc) 15V, 20V 46mOhm @ 18.2A, 20V 5.6V @ 3.7mA 22 nC @ 18 V +23V, -7V 790 pF @ 400 V - 153W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-3-40
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