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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IMT40R036M2HXTMA1

    IMT40R036M2HXTMA1

    SIC-MOS

    Infineon Technologies

    		 2,000 -
    RFQ
    		IMT40R036M2HXTMA1

    Datenblatt

         		CoolSiC™ 8-PowerSFN Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 400 V 7.6A (Ta), 50A (Tc) 15V, 18V 45.7mOhm @ 11.1A, 18V 5.6V @ 4mA 26 nC @ 18 V +23V, -7V 1170 pF @ 200 V - 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8-2
    FDH210N08

    FDH210N08

    MOSFET N-CH 75V TO247-3

    onsemi

    		 560 -
    RFQ
    		FDH210N08

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 75 V 210A (Tc) 10V - - - ±20V - - 462W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3
    AIMBG75R090M1HXTMA1

    AIMBG75R090M1HXTMA1

    AIMBG75R090M1HXTMA1

    Infineon Technologies

    		 980 -
    RFQ

    -

    		 CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 24A (Tj) 15V, 20V 83mOhm @ 7.4A, 20V 5.6V @ 2.6mA 15 nC @ 18 V +23V, -5V 542 pF @ 500 V - 128W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-7
    NTMTS0D4N04CTXG

    NTMTS0D4N04CTXG

    MOSFET N-CH 40V 79.8A/558A 8DFNW

    onsemi

    		 2,889 -
    RFQ
    		NTMTS0D4N04CTXG

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 79.8A (Ta), 558A (Tc) 10V 0.45mOhm @ 50A, 10V 4V @ 250µA 251 nC @ 10 V ±20V 16500 pF @ 20 V - 5W (Ta), 244W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-DFNW (8.3x8.4)
    NTMTSC4D2N10GTXG

    NTMTSC4D2N10GTXG

    100V MVSOA IN DFNW8(PQFN8X8) PAC

    onsemi

    		 2,670 -
    RFQ
    		NTMTSC4D2N10GTXG

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 21A (Ta), 178A (Tc) 10V 4.2mOhm @ 88A, 10V 4V @ 450µA 159 nC @ 10 V ±20V 10450 pF @ 50 V - 3.9W (Ta), 267W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount, Wettable Flank 8-TDFNW (8.3x8.4)
    R6024ENZ4C13

    R6024ENZ4C13

    MOSFET N-CH 600V 24A TO247

    Rohm Semiconductor

    		 594 -
    RFQ
    		R6024ENZ4C13

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V, 15V 165mOhm @ 24A, 15V - 70 nC @ 15 V ±20V - - 245W (Tc) - - - Through Hole TO-247
    SIHH125N60EF-T1GE3

    SIHH125N60EF-T1GE3

    MOSFET N-CH 600V 23A PPAK 8 X 8

    Vishay Siliconix

    		 3,000 -
    RFQ
    		SIHH125N60EF-T1GE3

    Datenblatt

         		EF 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 23A (Tc) 10V 125mOhm @ 12A, 10V 5V @ 250µA 47 nC @ 10 V ±30V 1533 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 8 x 8
    AOTL66810

    AOTL66810

    DESC: MOSFET N-CH 80V 65A TOLLA

    Alpha & Omega Semiconductor Inc.

    		 1,790 -
    RFQ
    		AOTL66810

    Datenblatt

         		AlphaSGT™ 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 65A (Ta), 420A (Tc) 8V, 10V 1.25mOhm @ 20A, 10V 3.6V @ 250µA 245 nC @ 10 V ±20V 13000 pF @ 40 V - 10W (Ta), 425W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TOLLA
    RX3L18BBGC16

    RX3L18BBGC16

    NCH 60V 180A, TO-220AB, POWER MO

    Rohm Semiconductor

    		 954 -
    RFQ
    		RX3L18BBGC16

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 180A (Tc) 4.5V, 10V 1.84mOhm @ 90A, 10V 2.5V @ 1mA 160 nC @ 10 V ±20V 11000 pF @ 30 V - 192W (Tc) 150°C (TJ) - - Through Hole TO-220AB
    FCH190N65F-F155

    FCH190N65F-F155

    MOSFET N-CH 650V 20.6A TO247

    onsemi

    		 387 -
    RFQ
    		FCH190N65F-F155

    Datenblatt

         		FRFET®, SuperFET® II TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 20.6A (Tc) 10V 190mOhm @ 10A, 10V 5V @ 2mA 78 nC @ 10 V ±20V 3225 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    MSC090SMA070SCT/R

    MSC090SMA070SCT/R

    MOSFET SIC 700 V 90 MOHM PSMT

    Microchip Technology

    		 1,300 -
    RFQ

    -

    		 - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    MSC090SMA070SDT/R

    MSC090SMA070SDT/R

    MOSFET SIC 700 V 90 MOHM TO-263-

    Microchip Technology

    		 800 -
    RFQ
    		MSC090SMA070SDT/R

    Datenblatt

         		mSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 700 V 34A (Tc) 18V, 20V 112mOhm @ 15A, 20V 5V @ 750µA 41 nC @ 20 V +23V, -10V 806 pF @ 700 V - 156W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
    TSM60NE084PW C0G

    TSM60NE084PW C0G

    600V, 42A, SINGLE N-CHANNEL HIGH

    Taiwan Semiconductor Corporation

    		 300 -
    RFQ
    		TSM60NE084PW C0G

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 42A (Tc) 10V, 12V 80mOhm @ 14A, 12V 6V @ 2.9mA 68 nC @ 10 V ±30V 2939 pF @ 300 V - 357W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247
    TP65H100G4LSGB-TR

    TP65H100G4LSGB-TR

    Hi Volt FETs

    Transphorm

    		 2,960 -
    RFQ

    -

    		 SuperGaN® 8-VDFN Exposed Pad Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 650 V 18.9A (Tc) 10V 110mOhm @ 12A, 10V 4.1V @ 1.8mA 14.4 nC @ 10 V ±20V 818 pF @ 400 V - 65.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (8x8)
    R6027YNZ4C13

    R6027YNZ4C13

    NCH 600V 27A, TO-247G, POWER MOS

    Rohm Semiconductor

    		 597 -
    RFQ
    		R6027YNZ4C13

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 27A (Tc) 10V, 12V 135mOhm @ 7A, 12V 6V @ 2mA 40 nC @ 10 V ±30V 1670 pF @ 100 V - 245W (Tc) 150°C (TJ) - - Through Hole TO-247G
    IPF129N20NM6ATMA1

    IPF129N20NM6ATMA1

    IPF129N20NM6ATMA1

    Infineon Technologies

    		 864 -
    RFQ
    		IPF129N20NM6ATMA1

    Datenblatt

         		OptiMOS™ 6 TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 11A (Ta), 87A (Tc) 10V, 15V 12mOhm @ 65A, 15V 4.5V @ 129µA 56 nC @ 10 V ±20V 3800 pF @ 100 V - 3.8W (Ta), 234W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-3
    AIMDQ75R090M1HXUMA1

    AIMDQ75R090M1HXUMA1

    AIMDQ75R090M1HXUMA1

    Infineon Technologies

    		 750 -
    RFQ

    -

    		 CoolSiC™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 24A (Tj) 15V, 20V 83mOhm @ 7.4A, 20V 5.6V @ 2.6mA 15 nC @ 18 V +23V, -5V 542 pF @ 500 V - 128W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22
    GS-065-011-1-L-MR

    GS-065-011-1-L-MR

    GS-065-011-1-L-MR

    Infineon Technologies Canada Inc.

    		 136 -
    RFQ

    -

    		 - 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 6V 190mOhm @ 3.2A, 6V 2.6V @ 2.4mA 2.2 nC @ 6 V +7V, -10V 70 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount 8-PDFN (5x6)
    IPDQ65R060CFD7AXTMA1

    IPDQ65R060CFD7AXTMA1

    AUTOMOTIVE_COOLMOS

    Infineon Technologies

    		 390 -
    RFQ
    		IPDQ65R060CFD7AXTMA1

    Datenblatt

         		CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 45A (Tc) 10V 60mOhm @ 16.4A, 10V 4.5V @ 820µA 65 nC @ 10 V ±20V 3288 pF @ 400 V - 272W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22-1
    NTBL075N065SC1

    NTBL075N065SC1

    M2 650V SIC MOSFET 75MOHM WITH T

    onsemi

    		 1,979 -
    RFQ
    		NTBL075N065SC1

    Datenblatt

         		- 8-PowerSFN Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 37A (Tj) 15V, 18V 85mOhm @ 15A, 18V 4.3V @ 5mA 59 nC @ 18 V +22V, -8V 1191 pF @ 325 V - 139W (Tj) -55°C ~ 175°C (TJ) - - Surface Mount 8-HPSOF
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