FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
IMZA75R140M1HXKSA1

IMZA75R140M1HXKSA1

SILICON CARBIDE MOSFET

Infineon Technologies

235 -
RFQ
IMZA75R140M1HXKSA1

Datenblatt

CoolSiC™ TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 750 V 16A (Tj) 15V, 20V 129mOhm @ 4.7A, 20V 5.6V @ 1.7mA 13 nC @ 18 V +23V, -5V 351 pF @ 500 V - 86W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-4
DMTH10H1M7STLW-13

DMTH10H1M7STLW-13

MOSFET BVDSS: 61V~100V POWERDI10

Diodes Incorporated

1,422 -
RFQ
DMTH10H1M7STLW-13

Datenblatt

- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 250A (Tc) 10V 2mOhm @ 30A, 10V 4V @ 250µA 147 nC @ 10 V ±20V 9871 pF @ 50 V - 6W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount POWERDI1012-8
MCTL160N15Y-TP

MCTL160N15Y-TP

N-CHANNEL MOSFET, TOLL-8L

Micro Commercial Co

3,975 -
RFQ
MCTL160N15Y-TP

Datenblatt

- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 160A (Tc) 6V, 10V 6.5mOhm @ 30A, 10V 4V @ 250µA 157 nC @ 10 V ±25V 9440 pF @ 75 V - 357W (Tj) -55°C ~ 150°C (TJ) - - Surface Mount TOLL-8L
NVH4L110N65S3F

NVH4L110N65S3F

SUPERFET3 FRFET AUTOMOTIVE 110MO

onsemi

448 -
RFQ
NVH4L110N65S3F

Datenblatt

SuperFET® III, FRFET® TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 110mOhm @ 15A, 10V 5V @ 740µA 59 nC @ 10 V ±30V 2530 pF @ 400 V - 240W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-4L
STH60N099DM9-2AG

STH60N099DM9-2AG

MOSFET N-CH 600V 29A D2PAK

STMicroelectronics

3,248 -
RFQ
STH60N099DM9-2AG

Datenblatt

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 27A (Tc) 10V 99mOhm @ 13.5A, 10V 4.5V @ 250µA 44 nC @ 10 V ±30V 2140 pF @ 400 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
SIJK140E-T1-GE3

SIJK140E-T1-GE3

N-CHANNEL 40 V (D-S) 175 C MOSFE

Vishay Siliconix

1,500 -
RFQ
SIJK140E-T1-GE3

Datenblatt

TrenchFET® Gen V 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 140A (Ta), 795A (Tc) 10V 0.47mOhm @ 20A, 10V 3.5V @ 250µA 470 nC @ 10 V ±20V 18510 pF @ 20 V - 17W (Ta), 536W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK®10 x 12
R8019KNXC7G

R8019KNXC7G

800V 19A, TO-220FM, HIGH-SPEED S

Rohm Semiconductor

1,000 -
RFQ
R8019KNXC7G

Datenblatt

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 19A (Tc) 10V 265mOhm @ 9.5A, 10V 4.5V @ 7mA 65 nC @ 10 V ±20V 2100 pF @ 100 V - 83W (Tc) 150°C (TJ) - - Through Hole TO-220FM
IQFH36N04NM6ATMA1

IQFH36N04NM6ATMA1

IQFH36N04NM6ATMA1

Infineon Technologies

2,507 -
RFQ

-

OptiMOS™ 6 12-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 66A (Ta), 656A (Tc) 6V, 10V 0.36mOhm @ 100A, 10V 2.8V @ 1.05mA 309 nC @ 10 V ±20V 18600 pF @ 20 V - 3W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSON-12-1
S2M0120120D

S2M0120120D

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions

264 -
RFQ
S2M0120120D

Datenblatt

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 21A (Tc) 20V 150mOhm @ 13.3A, 20V 4V @ 3.3mA 29.6 nC @ 20 V +20V, -5V 652 pF @ 1000 V - 156W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AD
IMBG120R181M2HXTMA1

IMBG120R181M2HXTMA1

SIC DISCRETE

Infineon Technologies

128 -
RFQ
IMBG120R181M2HXTMA1

Datenblatt

CoolSiC™ Gen 2 TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 14.9A (Tc) 15V, 18V 181.4mOhm @ 3.9A, 18V 5.1V @ 1.2mA 9.7 nC @ 18 V +23V, -10V 350 pF @ 800 V - 94W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-12
SIHK155N60E-T1-GE3

SIHK155N60E-T1-GE3

E SERIES POWER MOSFET POWERPAK 1

Vishay Siliconix

4,000 -
RFQ
SIHK155N60E-T1-GE3

Datenblatt

E 8-PowerBSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 155mOhm @ 10A, 10V 5V @ 250µA 36 nC @ 10 V ±30V 1514 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK®10 x 12
NVMTS1D0N04CLTXG

NVMTS1D0N04CLTXG

T6 40V LL AIZU SINGLE NCH PQFN 8

onsemi

3,000 -
RFQ
NVMTS1D0N04CLTXG

Datenblatt

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 51.3A (Ta), 291A (Tc) 4.5V, 10V 1mOhm @ 50A, 10V 3V @ 210µA 122 nC @ 10 V ±20V 7408 pF @ 25 V - 4.7W (Ta), 153W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFNW (8.3x8.4)
MCTL80N20Y-TP

MCTL80N20Y-TP

N-CHANNEL MOSFET,TOLL-8L

Micro Commercial Co

3,964 -
RFQ
MCTL80N20Y-TP

Datenblatt

- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 80A (Tc) 10V 13mOhm @ 30A, 10V 4V @ 250µA 144 nC @ 10 V ±20V 10387 pF @ 25 V - 250W (Tj) -55°C ~ 150°C (TJ) - - Surface Mount TOLL-8L
IPT60T065S7XTMA1

IPT60T065S7XTMA1

HIGH POWER_NEW

Infineon Technologies

1,930 -
RFQ
IPT60T065S7XTMA1

Datenblatt

CoolMOS™ 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Tc) 12V 65mOhm @ 8A, 12V 4.5V @ 470µA 51 nC @ 12 V ±20V 1932 pF @ 300 V - 167W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HSOF-8-2
IMBG40R045M2HXTMA1

IMBG40R045M2HXTMA1

SIC-MOS

Infineon Technologies

945 -
RFQ
IMBG40R045M2HXTMA1

Datenblatt

CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 400 V 6.8A (Ta), 43A (Tc) 15V, 18V 56.2mOhm @ 8.9A, 18V 5.6V @ 3.2mA 21 nC @ 18 V +23V, -7V 910 pF @ 200 V - 3.8W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-7-11
NVMFS5C404NWFAFT1G

NVMFS5C404NWFAFT1G

MOSFET N-CH 40V 53A/378A 5DFN

onsemi

760 -
RFQ
NVMFS5C404NWFAFT1G

Datenblatt

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 53A (Ta), 378A (Tc) 10V 0.7mOhm @ 50A, 10V 4V @ 250µA 128 nC @ 10 V ±20V 8400 pF @ 25 V - 3.9W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 5-DFNW (4.9x5.9) (8-SOFL-WF)
SIHH155N60EF-T1GE3

SIHH155N60EF-T1GE3

EF SERIES POWER MOSFET WITH FAST

Vishay Siliconix

6,000 -
RFQ
SIHH155N60EF-T1GE3

Datenblatt

EF 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 155mOhm @ 10A, 10V 5V @ 250µA 38 nC @ 10 V ±30V 1465 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 8 x 8
SIHH150N60E-T1-GE3

SIHH150N60E-T1-GE3

E SERIES POWER MOSFET POWERPAK 8

Vishay Siliconix

6,000 -
RFQ
SIHH150N60E-T1-GE3

Datenblatt

E 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 155mOhm @ 10A, 10V 5V @ 250µA 36 nC @ 10 V ±30V 1514 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 8 x 8
SIHK155N60EF-T1GE3

SIHK155N60EF-T1GE3

EF SERIES POWER MOSFET WITH FAST

Vishay Siliconix

4,000 -
RFQ
SIHK155N60EF-T1GE3

Datenblatt

EF 8-PowerBSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 52mOhm @ 10A, 10V 5V @ 250µA 38 nC @ 10 V ±20V 1465 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK®10 x 12
TK22V65X5,LQ

TK22V65X5,LQ

PB-F POWER MOSFET TRANSISTOR DFN

Toshiba Semiconductor and Storage

2,500 -
RFQ
TK22V65X5,LQ

Datenblatt

DTMOSIV-H 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Ta) 10V 170mOhm @ 11A, 10V 4.5V @ 1.1mA 50 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C - - Surface Mount 4-DFN-EP (8x8)
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