FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
IPA60R099C7XKSA1

IPA60R099C7XKSA1

MOSFET N-CH 600V 12A TO220-FP

Infineon Technologies

117 -
RFQ
IPA60R099C7XKSA1

Datenblatt

CoolMOS™ C7 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 99mOhm @ 9.7A, 10V 4V @ 490µA 42 nC @ 10 V ±20V 1819 pF @ 400 V - 33W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
MCBS220N04YHE3-TP

MCBS220N04YHE3-TP

N-CHANNEL MOSFET,TO-263-7

Micro Commercial Co

1,600 -
RFQ
MCBS220N04YHE3-TP

Datenblatt

- TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 220A (Tc) 6V, 10V 1.1mOhm @ 20A, 10V 4V @ 250µA 132 nC @ 10 V ±20V 7967 pF @ 25 V - 188W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-263-7
NTPF150N65S3HF

NTPF150N65S3HF

MOSFET N-CH 650V 24A TO220FP

onsemi

856 -
RFQ
NTPF150N65S3HF

Datenblatt

FRFET®, SuperFET® III TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 150mOhm @ 12A, 10V 5V @ 540µA 43 nC @ 10 V ±30V 1985 pF @ 400 V - 192W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
STWA40N60M2

STWA40N60M2

MOSFET N-CHANNEL 600V 34A TO247

STMicroelectronics

585 -
RFQ
STWA40N60M2

Datenblatt

MDmesh™ M2 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 34A (Tc) 10V - - - ±25V - - - - - - Through Hole TO-247 Long Leads
NTHL120N60S5Z

NTHL120N60S5Z

MOSFET N-CH 600V 22A TO3PN

onsemi

449 -
RFQ
NTHL120N60S5Z

Datenblatt

SuperFET® V TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tj) 10V 120mOhm @ 11.5A, 10V 4V @ 2.2mA 40 nC @ 10 V ±20V 2088 pF @ 400 V - 160W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
S2M0160120K

S2M0160120K

MOSFET SILICON CARBIDE SIC 1200V

SMC Diode Solutions

294 -
RFQ
S2M0160120K

Datenblatt

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 17A (Tc) 20V 196mOhm @ 10A, 20V 4V @ 2.5mA 26.5 nC @ 20 V +20V, -5V 513 pF @ 1000 V - 130W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
IPDD60R102G7XTMA1

IPDD60R102G7XTMA1

MOSFET N-CH 600V 23A HDSOP-10

Infineon Technologies

1,615 -
RFQ
IPDD60R102G7XTMA1

Datenblatt

CoolMOS™ G7 10-PowerSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 23A (Tc) 10V 102mOhm @ 7.8A, 10V 4V @ 390µA 34 nC @ 10 V ±20V 1320 pF @ 400 V - 139W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-10-1
FCA20N60-F109

FCA20N60-F109

MOSFET N-CH 600V 20A TO3PN

onsemi

440 -
RFQ
FCA20N60-F109

Datenblatt

SuperFET™ TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 190mOhm @ 10A, 10V 5V @ 250µA 98 nC @ 10 V ±30V 3080 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3PN
PSMP075N15NS1_T0_00601

PSMP075N15NS1_T0_00601

150V N-CHANNEL ENHANCEMENT MODE

Panjit International Inc.

1,754 -
RFQ
PSMP075N15NS1_T0_00601

Datenblatt

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 150 V 125A (Tc) 7V, 10V 7.5mOhm @ 50A, 10V 4V @ 250µA 97 nC @ 10 V ±20V 6511 pF @ 75 V - 258.6W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB-L
NVMTS6D0N15MC

NVMTS6D0N15MC

PTNG 150V IN CEBU DFNW 8X8 FOR A

onsemi

2,787 -
RFQ
NVMTS6D0N15MC

Datenblatt

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 18A (Ta), 128A (Tc) 10V 6.4mOhm @ 69A, 10V 4.5V @ 379µA 58 nC @ 10 V ±20V 4815 pF @ 75 V - 5W (Ta), 237W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFNW (8.3x8.4)
IMT65R163M1HXUMA1

IMT65R163M1HXUMA1

SILICON CARBIDE MOSFET

Infineon Technologies

1,579 -
RFQ
IMT65R163M1HXUMA1

Datenblatt

CoolSiC™ 8-PowerSFN Tape & Reel (TR) Active - SiCFET (Silicon Carbide) 650 V - 18V - - - - - - - - - - Surface Mount PG-HSOF-8-2
IPTC012N06NM5ATMA1

IPTC012N06NM5ATMA1

TRENCH 40<-<100V

Infineon Technologies

1,658 -
RFQ
IPTC012N06NM5ATMA1

Datenblatt

OptiMOS™ 5 16-PowerSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 41A (Ta), 311A (Tc) 6V, 10V 1.2mOhm @ 100A, 10V 3.3V @ 143µA 133 nC @ 10 V ±20V 10000 pF @ 30 V - 3.8W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HDSOP-16-U01
SIHH186N60EF-T1GE3

SIHH186N60EF-T1GE3

MOSFET N-CH 600V 16A PPAK 8 X 8

Vishay Siliconix

4,665 -
RFQ
SIHH186N60EF-T1GE3

Datenblatt

EF 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 193mOhm @ 9.5A, 10V 5V @ 250µA 32 nC @ 10 V ±30V 1081 pF @ 100 V - 114W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 8 x 8
SIHA100N60E-GE3

SIHA100N60E-GE3

MOSFET N-CH 600V 30A TO220

Vishay Siliconix

905 -
RFQ
SIHA100N60E-GE3

Datenblatt

E TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 100mOhm @ 13A, 10V 5V @ 250µA 50 nC @ 10 V ±30V 1851 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
IMT40R045M2HXTMA1

IMT40R045M2HXTMA1

SIC-MOS

Infineon Technologies

2,000 -
RFQ
IMT40R045M2HXTMA1

Datenblatt

CoolSiC™ 8-PowerSFN Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 400 V 6.8A (Ta), 43A (Tc) 15V, 18V 56.2mOhm @ 8.9A, 18V 5.6V @ 3.2mA 21 nC @ 18 V +23V, -7V 910 pF @ 200 V - 3.8W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8-2
NTMTS1D5N08H

NTMTS1D5N08H

T8-80V IN PQFN88 FOR INDU

onsemi

2,970 -
RFQ
NTMTS1D5N08H

Datenblatt

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 36A (Ta), 255A (Tc) 6V, 10V 1.5mOhm @ 90A, 10V 4V @ 490µA 125 nC @ 10 V ±20V 8220 pF @ 40 V - 4.2W (Ta), 208W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFNW (8.3x8.4)
IPDQ65R080CFD7AXTMA1

IPDQ65R080CFD7AXTMA1

AUTOMOTIVE_COOLMOS

Infineon Technologies

430 -
RFQ
IPDQ65R080CFD7AXTMA1

Datenblatt

CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 36A (Tc) 10V 80mOhm @ 12.5A, 10V 4.5V @ 630µA 50 nC @ 10 V ±20V 2513 pF @ 400 V - 223W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22-1
XP8NA1R2TL

XP8NA1R2TL

MOSFET N-CH 80V 300A TOLL

YAGEO XSEMI

994 -
RFQ
XP8NA1R2TL

Datenblatt

XP8NA1R2 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 300A (Tc) 10V 1.2mOhm @ 100A, 10V 5V @ 250µA 424 nC @ 10 V ±20V 25120 pF @ 60 V - 3.75W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TOLL
GAN140-650EBEZ

GAN140-650EBEZ

650 V, 140 MOHM GALLIUM NITRIDE

Nexperia USA Inc.

2,429 -
RFQ
GAN140-650EBEZ

Datenblatt

- 8-VDFN Exposed Pad Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 650 V 17A (Tc) 6V 140mOhm @ 5A, 6V 2.5V @ 17.2mA 3.5 nC @ 6 V +7V, -1.4V 125 pF @ 400 V - 113W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount, Wettable Flank DFN8080-8
STFU23N80K5

STFU23N80K5

MOSFET N-CH 800V 16A TO220FP

STMicroelectronics

619 -
RFQ
STFU23N80K5

Datenblatt

MDmesh™ K5 TO-220-3 Full Pack Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 16A (Tc) 10V 280mOhm @ 8A, 10V 5V @ 100µA 33 nC @ 10 V ±30V 1000 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
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