TomatoElecBestellverfolgung TomatoElecMein Konto
    Beliebte Suche AP3012KTR-E1 SMBJ43A-13-F DMN4034SSS-13 FMMT495QTA BZX84-B36-QR SD103AW-7-F DFLU1200-7 AP2210K-ADJTRG1 DDZ7V5CS-7 RS1MWF-7
    TomatoElec

    Verfügbar 24/7 unter

    0755-82798135
    TomatoElec TomatoElec
    Alle Kategorien
    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

    Alles zurücksetzen
    Alle anwenden
    Ergebnis

    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    STP14NK50Z

    STP14NK50Z

    MOSFET N-CH 500V 14A TO220AB

    STMicroelectronics

    		 915 -
    RFQ
    		STP14NK50Z

    Datenblatt

         		SuperMESH™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 380mOhm @ 6A, 10V 4.5V @ 100µA 92 nC @ 10 V ±30V 2000 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    SIHG22N60EF-GE3

    SIHG22N60EF-GE3

    MOSFET N-CH 600V 19A TO247AC

    Vishay Siliconix

    		 793 -
    RFQ
    		SIHG22N60EF-GE3

    Datenblatt

         		EF TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 182mOhm @ 11A, 10V 4V @ 250µA 96 nC @ 10 V ±30V 1423 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
    IMWH170R650M1XKSA1

    IMWH170R650M1XKSA1

    IMWH170R650M1XKSA1

    Infineon Technologies

    		 425 -
    RFQ

    -

    		 CoolSiC™ TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1700 V 7.5A (Tc) 12V, 15V 580mOhm @ 1.5A, 15V 5.7V @ 1.7mA 8.1 nC @ 12 V 15V, 12V 337 pF @ 1000 V - 88W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO247-3-U04
    NVMFS6H800NWFT1G

    NVMFS6H800NWFT1G

    MOSFET N-CH 80V 28A/203A 5DFN

    onsemi

    		 1,500 -
    RFQ
    		NVMFS6H800NWFT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 28A (Ta), 203A (Tc) 10V 2.1mOhm @ 50A, 10V 4V @ 330µA 85 nC @ 10 V ±20V 5530 pF @ 40 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 5-DFNW (4.9x5.9) (8-SOFL-WF)
    IQD009N06NM5ATMA1

    IQD009N06NM5ATMA1

    TRENCH 40<-<100V

    Infineon Technologies

    		 4,943 -
    RFQ
    		IQD009N06NM5ATMA1

    Datenblatt

         		OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 42A (Ta), 445A (Tc) 6V, 10V 0.9mOhm @ 50A, 10V 3.3V @ 163µA 150 nC @ 10 V ±20V 12000 pF @ 30 V - 3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSON-8-9
    TK5R0A15Q5,S4X

    TK5R0A15Q5,S4X

    150V UMOS10-HSD TO-220SIS 5MOHM

    Toshiba Semiconductor and Storage

    		 380 -
    RFQ
    		TK5R0A15Q5,S4X

    Datenblatt

         		U-MOSX-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 150 V 76A (Ta), 76A (Tc) 8V, 10V 5mOhm @ 38A, 10V 4.5V @ 2.2mA 96 nC @ 10 V ±20V 7820 pF @ 75 V - 53W (Tc) 175°C - - Through Hole TO-220SIS
    SIHG150N60E-GE3

    SIHG150N60E-GE3

    E SERIES POWER MOSFET TO-247AC,

    Vishay Siliconix

    		 900 -
    RFQ
    		SIHG150N60E-GE3

    Datenblatt

         		E TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 155mOhm @ 10A, 10V 5V @ 250µA 36 nC @ 10 V ±30V 1514 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
    EPC2308

    EPC2308

    TRANS GAN 150V .006OHM 7QFN

    EPC

    		 8,791 -
    RFQ

    -

    		 eGaN® 7-PowerWQFN Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 150 V 48A (Ta) 5V 6mOhm @ 15A, 5V 2.5V @ 5mA 13.8 nC @ 5 V +6V, -4V 2103 pF @ 75 V - - -40°C ~ 150°C (TJ) - - Surface Mount 7-QFN (3x5)
    IPB60R105CFD7ATMA1

    IPB60R105CFD7ATMA1

    MOSFET N-CH 600V 21A TO263-3

    Infineon Technologies

    		 848 -
    RFQ
    		IPB60R105CFD7ATMA1

    Datenblatt

         		CoolMOS™ CFD7 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 105mOhm @ 9.3A, 10V 4.5V @ 470µA 42 nC @ 10 V ±20V 1752 pF @ 400 V - 106W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3-2
    MCACL320N04YQ-TP

    MCACL320N04YQ-TP

    MOSFET N-CH 40 320A DFN5060

    Micro Commercial Co

    		 9,981 -
    RFQ
    		MCACL320N04YQ-TP

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 320A (Tc) 6V, 10V 1.1mOhm @ 75A, 10V 3V @ 1mA 88 nC @ 10 V ±20V 6914 pF @ 25 V - 230W (Tj) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN5060
    NVMFS6H818NLWFT1G

    NVMFS6H818NLWFT1G

    MOSFET N-CH 80V 22A/135A 5DFN

    onsemi

    		 3,000 -
    RFQ
    		NVMFS6H818NLWFT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 22A (Ta), 135A (Tc) 4.5V, 10V 3.2mOhm @ 20A, 10V 2V @ 190µA 64 nC @ 10 V ±20V 3844 pF @ 40 V - 3.8W (Ta), 140W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 5-DFNW (4.9x5.9) (8-SOFL-WF)
    NVMFS4C01NWFT1G

    NVMFS4C01NWFT1G

    MOSFET N-CH 30V 49A/319A 5DFN

    onsemi

    		 1,500 -
    RFQ
    		NVMFS4C01NWFT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 49A (Ta), 319A (Tc) 4.5V, 10V 0.9mOhm @ 30A, 10V 2.2V @ 250µA 139 nC @ 10 V ±20V 10144 pF @ 15 V - 3.84W (Ta), 161W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
    CDMSJ22029-650 SL

    CDMSJ22029-650 SL

    SUPER JUNCTION MOSFETS

    Central Semiconductor Corp

    		 497 -
    RFQ
    		CDMSJ22029-650 SL

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 29A (Tc) 10V 130mOhm @ 10.8A, 10V 4V @ 250µA 51 nC @ 10 V 30V 1920 pF @ 400 V - 33W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    IMT65R260M1HXUMA1

    IMT65R260M1HXUMA1

    SILICON CARBIDE MOSFET

    Infineon Technologies

    		 1,870 -
    RFQ
    		IMT65R260M1HXUMA1

    Datenblatt

         		CoolSiC™ 8-PowerSFN Tape & Reel (TR) Active - SiCFET (Silicon Carbide) 650 V - 18V - - - - - - - - - - Surface Mount PG-HSOF-8-2
    R6020YNX3C16

    R6020YNX3C16

    NCH 600V 20A, TO-220AB, POWER MO

    Rohm Semiconductor

    		 973 -
    RFQ
    		R6020YNX3C16

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V, 12V 185mOhm @ 6A, 12V 6V @ 1.65mA 28 nC @ 10 V ±30V 1200 pF @ 100 V - 182W (Tc) 150°C (TJ) - - Through Hole TO-220AB
    IPT65R099CFD7XTMA1

    IPT65R099CFD7XTMA1

    MOSFET N-CH 650V 8HSOF

    Infineon Technologies

    		 1,995 -
    RFQ
    		IPT65R099CFD7XTMA1

    Datenblatt

         		CoolMOS™ CFD7 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V - - - - - - - - - - - - Surface Mount PG-HSOF-8-2
    SIRS4400DP-T1-RE3

    SIRS4400DP-T1-RE3

    N-CHANNEL 40 V (D-S) MOSFET POWE

    Vishay Siliconix

    		 5,998 -
    RFQ
    		SIRS4400DP-T1-RE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 77A (Ta), 440A (Tc) 4.5V, 10V 0.69mOhm @ 20A, 10V 2.3V @ 250µA 295 nC @ 10 V ±20V 13730 pF @ 20 V - 7.4W (Ta), 240W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    ISC046N13NM6ATMA1

    ISC046N13NM6ATMA1

    TRENCH >=100V

    Infineon Technologies

    		 3,656 -
    RFQ
    		ISC046N13NM6ATMA1

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    TSM60NE110CIT C0G

    TSM60NE110CIT C0G

    600V, 17A, SINGLE N-CHANNEL HIGH

    Taiwan Semiconductor Corporation

    		 2,000 -
    RFQ

    -

    		 - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) 10V, 12V 100mOhm @ 5.6A, 12V 6V @ 2.5mA 55 nC @ 10 V ±30V 2330 pF @ 300 V - 73W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220TL
    S2M0160120D

    S2M0160120D

    MOSFET SILICON CARBIDE SIC 1200V

    SMC Diode Solutions

    		 285 -
    RFQ
    		S2M0160120D

    Datenblatt

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 17A (Tc) 20V 196mOhm @ 10A, 20V 4V @ 2.5mA 26.5 nC @ 20 V +20V, -5V 513 pF @ 1000 V - 130W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AD
    Total 36284 Record«Prev1... 298299300301302303304305...1815Next»
    TomatoElec

    Suche

     TomatoElec

    Produkte

     TomatoElec

    Telefon

     TomatoElec

    Benutzer
    TomatoElec
    [email protected]
    0755-82798135