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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    RX3R05BBHC16

    RX3R05BBHC16

    NCH 150V 50A, TO-220AB, POWER MO

    Rohm Semiconductor

    		 500 -
    RFQ
    		RX3R05BBHC16

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 150 V 50A (Tc) 6V, 10V 29mOhm @ 25A, 10V 4V @ 1mA 37 nC @ 10 V ±20V 2150 pF @ 75 V - 89W (Tc) 150°C (TJ) - - Through Hole TO-220AB
    MCTK105N60FH-TP

    MCTK105N60FH-TP

    N-CHANNEL MOSFET,TOLL-8L-KS

    Micro Commercial Co

    		 4,000 -
    RFQ
    		MCTK105N60FH-TP

    Datenblatt

         		- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 17.5A (Tc) 10V 105mOhm @ 15.3A, 10V 5V @ 2.1mA 57 nC @ 10 V ±30V 2240 pF @ 100 V - 107W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TOLL-8L-KS
    R6061YNXC7G

    R6061YNXC7G

    NCH 600V 26A, TO-220FM, POWER MO

    Rohm Semiconductor

    		 970 -
    RFQ
    		R6061YNXC7G

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 26A (Tc) 10V, 12V 60mOhm @ 13A, 12V 6V @ 3.5mA 76 nC @ 10 V ±30V 3700 pF @ 100 V - 100W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    ISC035N10NM5LF2ATMA1

    ISC035N10NM5LF2ATMA1

    ISC035N10NM5LF2ATMA1 MOSFET

    Infineon Technologies

    		 4,675 -
    RFQ
    		ISC035N10NM5LF2ATMA1

    Datenblatt

         		OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 19A (Ta), 164A (Tc) 10V 3.5mOhm @ 50A, 10V 3.9V @ 115µA 88 nC @ 10 V ±20V 7200 pF @ 50 V - 3W (Ta), 217W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TDSON-8 FL
    NTMTS0D7N04CLTXG

    NTMTS0D7N04CLTXG

    MOSFET N-CH 40V 67A/433A 8DFNW

    onsemi

    		 3,000 -
    RFQ
    		NTMTS0D7N04CLTXG

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 67A (Ta), 433A (Tc) 4.5V, 10V 0.63mOhm @ 50A, 10V 2.5V @ 250µA 205 nC @ 10 V ±20V 12238 pF @ 25 V - 4.9W (Ta), 205W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-DFNW (8.3x8.4)
    IPA65R125C7XKSA1

    IPA65R125C7XKSA1

    MOSFET N-CH 650V 10A TO220-FP

    Infineon Technologies

    		 322 -
    RFQ
    		IPA65R125C7XKSA1

    Datenblatt

         		CoolMOS™ C7 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 10A (Tc) 10V 125mOhm @ 8.9A, 10V 4V @ 440µA 35 nC @ 10 V ±20V 1670 pF @ 400 V - 32W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
    MSC360SMA120SCT/R

    MSC360SMA120SCT/R

    MOSFET SIC 1200 V 360 MOHM PSMT

    Microchip Technology

    		 1,300 -
    RFQ

    -

    		 - TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active N-Channel SiC (Silicon Carbide Junction Transistor) 1200 V 11A (Tc) 20V 450mOhm @ 5A, 20V 3.14V @ 250µA 21 nC @ 20 V +23V, -10V 255 pF @ 1000 V - 71W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-268
    MSC360SMA120SDT/R

    MSC360SMA120SDT/R

    MOSFET SIC 1200 V 360 MOHM TO-26

    Microchip Technology

    		 795 -
    RFQ
    		MSC360SMA120SDT/R

    Datenblatt

         		mSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 12A (Tc) 18V, 20V 450mOhm @ 5A, 20V 5V @ 250µA 21 nC @ 20 V +23V, -10V 258 pF @ 1.2 kV - 92W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
    IPI60R165CPXKSA1

    IPI60R165CPXKSA1

    HIGH POWER_LEGACY

    Infineon Technologies

    		 500 -
    RFQ
    		IPI60R165CPXKSA1

    Datenblatt

         		CoolMOS® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 165mOhm @ 12A, 10V 3.5V @ 790µA 52 nC @ 10 V ±20V 2000 pF @ 100 V - 192W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3-1
    IPZA60R099P7XKSA1

    IPZA60R099P7XKSA1

    MOSFET N-CH 600V 31A TO247-4

    Infineon Technologies

    		 240 -
    RFQ
    		IPZA60R099P7XKSA1

    Datenblatt

         		CoolMOS™ P7 TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 31A (Tc) 10V 99mOhm @ 10.5A, 10V 4V @ 530µA 45 nC @ 10 V ±20V 1952 pF @ 400 V - 117W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-4
    NVMFS5C612NT1G

    NVMFS5C612NT1G

    NFET SO8FL 60V 235A 1.5MO

    onsemi

    		 1,500 -
    RFQ
    		NVMFS5C612NT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 34A (Ta), 225A (Tc) 10V 1.65mOhm @ 50A, 10V 4V @ 250µA 62 nC @ 10 V ±20V 4900 pF @ 25 V - 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
    NTPF125N65S3H

    NTPF125N65S3H

    POWER MOSFET, N-CHANNEL, SUPERFE

    onsemi

    		 970 -
    RFQ
    		NTPF125N65S3H

    Datenblatt

         		SuperFET® III TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tj) 10V 125mOhm @ 12A, 10V 4V @ 2.1mA 44 nC @ 10 V ±30V 2200 pF @ 400 V - 37W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    IPBE65R145CFD7AATMA1

    IPBE65R145CFD7AATMA1

    AUTOMOTIVE PG-TO263-7

    Infineon Technologies

    		 934 -
    RFQ
    		IPBE65R145CFD7AATMA1

    Datenblatt

         		CoolMOS™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 17A (Tc) 10V 145mOhm @ 8.5A, 10V 4.5V @ 420µA 36 nC @ 10 V ±20V 1694 pF @ 400 V - 98W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-TO263-7-11
    IPW65R150CFDFKSA2

    IPW65R150CFDFKSA2

    MOSFET N-CH 650V 22.4A TO247-3

    Infineon Technologies

    		 192 -
    RFQ
    		IPW65R150CFDFKSA2

    Datenblatt

         		CoolMOS™ CFD2 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 22.4A (Tc) 10V 150mOhm @ 9.3A, 10V 4.5V @ 900µA 86 nC @ 10 V ±20V 2340 pF @ 100 V - 195.3W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-41
    TP65H150G4LSG

    TP65H150G4LSG

    GAN FET N-CH 650V PQFN

    Transphorm

    		 2,674 -
    RFQ
    		TP65H150G4LSG

    Datenblatt

         		- 3-PowerTDFN Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 650 V 13A (Tc) 10V 180mOhm @ 8.5A, 10V 4.8V @ 500µA 8 nC @ 10 V ±20V 598 pF @ 400 V - 52W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 3-PQFN (8x8)
    IPDQ65R099CFD7AXTMA1

    IPDQ65R099CFD7AXTMA1

    AUTOMOTIVE_COOLMOS

    Infineon Technologies

    		 460 -
    RFQ
    		IPDQ65R099CFD7AXTMA1

    Datenblatt

         		CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 29A (Tc) 10V 99mOhm @ 9.7A, 10V 4.5V @ 480µA 39 nC @ 10 V ±20V 1942 pF @ 400 V - 186W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-HDSOP-22-1
    S1M1000170K

    S1M1000170K

    MOSFET SILICON CARBIDE SIC 1700V

    SMC Diode Solutions

    		 300 -
    RFQ
    		S1M1000170K

    Datenblatt

         		- TO-247-4 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1700 V 5.2A (Tc) 20V 1.3Ohm @ 2A, 20V 4V @ 500µA 10 nC @ 20 V +25V, -10V 160 pF @ 1000 V - 81W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4
    EPC2307

    EPC2307

    TRANS GAN 200V .010OHM 7QFN

    EPC

    		 2,839 -
    RFQ

    -

    		 eGaN® 7-PowerWQFN Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 200 V 48A (Ta) 5V 10mOhm @ 16A, 5V 2.5V @ 4mA 10.6 nC @ 5 V +6V, -4V 1401 pF @ 100 V - - -40°C ~ 150°C (TJ) - - Surface Mount 7-QFN (3x5)
    NVMFS5C410NLWFAFT1G

    NVMFS5C410NLWFAFT1G

    MOSFET N-CH 40V 50A/330A 5DFN

    onsemi

    		 966 -
    RFQ
    		NVMFS5C410NLWFAFT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Ta), 330A (Tc) 4.5V, 10V 0.82mOhm @ 50A, 10V 2V @ 250µA 143 nC @ 10 V ±20V 8862 pF @ 25 V - 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 5-DFN (5x6) (8-SOFL)
    MCACL330N04YHE3-TP

    MCACL330N04YHE3-TP

    MOSFET N-CH 40 330A DFN5060-C

    Micro Commercial Co

    		 10,000 -
    RFQ
    		MCACL330N04YHE3-TP

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 330A (Tc) 6V, 10V 1mOhm @ 75A, 10V 4V @ 250µA 133 nC @ 10 V ±20V 8098 pF @ 30 V - 187.5W (Tj) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN5060-C
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