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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    TSM190N08CZ C0G

    TSM190N08CZ C0G

    MOSFET N-CHANNEL 75V 190A TO220

    Taiwan Semiconductor Corporation

    		 3,980 -
    RFQ
    		TSM190N08CZ C0G

    Datenblatt

         		- TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 75 V 190A (Tc) 10V 4.2mOhm @ 90A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 8600 pF @ 30 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    IPI111N15N3GAKSA1

    IPI111N15N3GAKSA1

    MOSFET N-CH 150V 83A TO262-3

    Infineon Technologies

    		 500 -
    RFQ
    		IPI111N15N3GAKSA1

    Datenblatt

         		OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 150 V 83A (Tc) 8V, 10V 11.1mOhm @ 83A, 10V 4V @ 160µA 55 nC @ 10 V ±20V 3230 pF @ 75 V - 214W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
    BUK762R6-60E,118

    BUK762R6-60E,118

    MOSFET N-CH 60V 120A D2PAK

    Nexperia USA Inc.

    		 4,795 -
    RFQ
    		BUK762R6-60E,118

    Datenblatt

         		TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.6mOhm @ 25A, 10V 4V @ 1mA 140 nC @ 10 V ±20V 10170 pF @ 25 V - 324W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK
    IAUMN10S5N016GAUMA1

    IAUMN10S5N016GAUMA1

    MOSFET_(75V 120V(

    Infineon Technologies

    		 1,965 -
    RFQ
    		IAUMN10S5N016GAUMA1

    Datenblatt

         		OptiMOS™ 5 4-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 220A (Tj) 6V, 10V 1.6mOhm @ 100A, 10V 3.8V @ 230µA 190 nC @ 10 V ±20V 13570 pF @ 50 V - 325W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HSOG-4-1
    R6049YNX3C16

    R6049YNX3C16

    NCH 600V 49A, TO-220AB, POWER MO

    Rohm Semiconductor

    		 991 -
    RFQ
    		R6049YNX3C16

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 49A (Tc) 10V, 12V 82mOhm @ 11A, 12V 6V @ 2.9mA 65 nC @ 10 V ±30V 2940 pF @ 100 V - 448W (Tc) 150°C (TJ) - - Through Hole TO-220AB
    R6022YNZ4C13

    R6022YNZ4C13

    NCH 600V 22A, TO-247, POWER MOSF

    Rohm Semiconductor

    		 600 -
    RFQ
    		R6022YNZ4C13

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V, 12V 165mOhm @ 6.5A, 12V 6V @ 1.8mA 33 nC @ 10 V ±30V 1400 pF @ 100 V - 205W (Tc) 150°C (TJ) - - Through Hole TO-247G
    IAUA210N10S5N024AUMA1

    IAUA210N10S5N024AUMA1

    MOSFET_(75V 120V( PG-HSOF-5

    Infineon Technologies

    		 3,600 -
    RFQ
    		IAUA210N10S5N024AUMA1

    Datenblatt

         		OptiMOS™ 5-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 210A (Tj) 6V, 10V 2.4mOhm @ 100A, 10V 3.8V @ 150µA 119 nC @ 10 V ±20V 8696 pF @ 50 V - 238W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-5-4
    DI280N10TL

    DI280N10TL

    MOSFET TOLL N 100V 0.002OHM 175C

    Diotec Semiconductor

    		 1,892 -
    RFQ
    		DI280N10TL

    Datenblatt

         		- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 280A (Tc) 10V 2mOhm @ 50A, 10V 4.2V @ 250µA 122 nC @ 10 V ±20V 8150 pF @ 50 V - 425mW (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TOLL
    IPP039N10N5AKSA1

    IPP039N10N5AKSA1

    MOSFET N-CH 100V 100A TO220-3

    Infineon Technologies

    		 500 -
    RFQ
    		IPP039N10N5AKSA1

    Datenblatt

         		OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 6V, 10V 3.9mOhm @ 50A, 10V 3.8V @ 125µA 95 nC @ 10 V ±20V 7000 pF @ 50 V - 188W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
    PJD75N04V-AU_L2_002A1

    PJD75N04V-AU_L2_002A1

    40V N-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 3,000 -
    RFQ
    		PJD75N04V-AU_L2_002A1

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 28.2A (Ta), 181A (Tc) 7V, 10V 2.1mOhm @ 20A, 10V 3.5V @ 50µA 63 nC @ 10 V ±20V 4691 pF @ 25 V - 3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252AA
    PJD80N04S-AU_L2_002A1

    PJD80N04S-AU_L2_002A1

    40V N-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 3,000 -
    RFQ
    		PJD80N04S-AU_L2_002A1

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 28A (Ta), 190A (Tc) 4.5V, 10V 2.1mOhm @ 20A, 10V 2.3V @ 50µA 75 nC @ 10 V ±20V 4973 pF @ 25 V - 3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252AA
    NTMJS0D9N04CTWG

    NTMJS0D9N04CTWG

    MOSFET N-CH 40V 52A/342A 8LFPAK

    onsemi

    		 2,988 -
    RFQ
    		NTMJS0D9N04CTWG

    Datenblatt

         		- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 52A (Ta), 342A (Tc) 10V 0.81mOhm @ 50A, 10V 4V @ 250µA 117 nC @ 10 V 20V 7400 pF @ 20 V - 4.2W (Ta), 180W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-LFPAK
    NVD5C632NLT4G

    NVD5C632NLT4G

    MOSFET N-CH 60V 29A/155A DPAK

    onsemi

    		 1,786 -
    RFQ
    		NVD5C632NLT4G

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 29A (Ta), 155A (Tc) 4.5V, 10V 2.5mOhm @ 50A, 10V 2.1V @ 250µA 78 nC @ 10 V ±20V 5700 pF @ 25 V - 4W (Ta), 115W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK
    GAN140-650FBEZ

    GAN140-650FBEZ

    650 V, 140 MOHM GALLIUM NITRIDE

    Nexperia USA Inc.

    		 2,327 -
    RFQ
    		GAN140-650FBEZ

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 650 V 17A (Tc) 6V 140mOhm @ 5A, 6V 2.5V @ 17.2mA 3.5 nC @ 6 V +7V, -1.4V 125 pF @ 400 V - 113W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount, Wettable Flank DFN5060-5
    AUIRF7736M2TR

    AUIRF7736M2TR

    MOSFET N-CH 40V 22A DIRECTFET

    Infineon Technologies

    		 3,844 -
    RFQ
    		AUIRF7736M2TR

    Datenblatt

         		HEXFET® DirectFET™ Isometric M4 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 22A (Ta), 108A (Tc) 10V 3mOhm @ 65A, 10V 4V @ 150µA 108 nC @ 10 V ±20V 4267 pF @ 25 V - 2.5W (Ta), 63W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DirectFET™ Isometric M4
    IPA90R500C3XKSA2

    IPA90R500C3XKSA2

    MOSFET N-CH 900V 11A TO220

    Infineon Technologies

    		 1,915 -
    RFQ
    		IPA90R500C3XKSA2

    Datenblatt

         		CoolMOS™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 900 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 3.5V @ 740µA 68 nC @ 10 V ±20V 1700 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
    TSM60NE180CIT C0G

    TSM60NE180CIT C0G

    600V, 13A, SINGLE N-CHANNEL HIGH

    Taiwan Semiconductor Corporation

    		 2,000 -
    RFQ

    -

    		 - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V, 12V 165mOhm @ 4.3A, 12V 6V @ 1.8mA 34 nC @ 10 V ±30V 1417 pF @ 300 V - 63W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220TL
    TSM600NA25CIT C0G

    TSM600NA25CIT C0G

    250V 22A SINGLE N-CHAN

    Taiwan Semiconductor Corporation

    		 3,897 -
    RFQ
    		TSM600NA25CIT C0G

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 250 V 22A (Tc) 10V 60mOhm @ 11A, 10V 4.2V @ 250µA 71 nC @ 10 V ±30V 3086 pF @ 125 V - 78W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220TL
    IPP020N06NAKSA1

    IPP020N06NAKSA1

    MOSFET N-CH 60V 29A/120A TO220-3

    Infineon Technologies

    		 662 -
    RFQ
    		IPP020N06NAKSA1

    Datenblatt

         		OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 29A (Ta), 120A (Tc) 6V, 10V 2mOhm @ 100A, 10V 2.8V @ 143µA 106 nC @ 10 V ±20V 7800 pF @ 30 V - 3W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
    GS-065-004-6-L-MR

    GS-065-004-6-L-MR

    GS-065-004-6-L-MR

    Infineon Technologies Canada Inc.

    		 357 -
    RFQ

    -

    		 - 8-PowerVDFN Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 700 V 4.6A (Tc) 6V 455mOhm @ 1.2A, 6V 2.6V @ 1mA 0.8 nC @ 6 V +7V, -10V 26 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount 8-PDFN (5x6)
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