TomatoElecBestellverfolgung TomatoElecMein Konto
    Beliebte Suche AP3012KTR-E1 SMBJ43A-13-F DMN4034SSS-13 FMMT495QTA BZX84-B36-QR SD103AW-7-F DFLU1200-7 AP2210K-ADJTRG1 DDZ7V5CS-7 RS1MWF-7
    TomatoElec

    Verfügbar 24/7 unter

    0755-82798135
    TomatoElec TomatoElec
    Alle Kategorien
    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

    Alles zurücksetzen
    Alle anwenden
    Ergebnis

    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    R6022YNX3C16

    R6022YNX3C16

    NCH 600V 22A, TO-220AB, POWER MO

    Rohm Semiconductor

    		 995 -
    RFQ
    		R6022YNX3C16

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V, 12V 165mOhm @ 6.5A, 12V 6V @ 1.8mA 33 nC @ 10 V ±30V 1400 pF @ 100 V - 205W (Tc) 150°C (TJ) - - Through Hole TO-220AB
    XP60SL115DR

    XP60SL115DR

    MOSFET N-CH 600V 28A TO262

    YAGEO XSEMI

    		 990 -
    RFQ
    		XP60SL115DR

    Datenblatt

         		XP60SL115D TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 115mOhm @ 9.6A, 10V 5V @ 250µA 145 nC @ 10 V ±20V 5120 pF @ 100 V - 2W (Ta), 178W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262
    IPB80N06S2H5ATMA2

    IPB80N06S2H5ATMA2

    MOSFET N-CH 55V 80A TO263-3

    Infineon Technologies

    		 875 -
    RFQ
    		IPB80N06S2H5ATMA2

    Datenblatt

         		OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 5.2mOhm @ 80A, 10V 4V @ 230µA 155 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
    IPB80N04S204ATMA2

    IPB80N04S204ATMA2

    MOSFET N-CH 40V 80A TO263-3

    Infineon Technologies

    		 6,388 -
    RFQ
    		IPB80N04S204ATMA2

    Datenblatt

         		OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.4mOhm @ 80A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 5300 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
    IQD016N08NM5CGATMA1

    IQD016N08NM5CGATMA1

    OPTIMOS 6 POWER-TRANSISTOR

    Infineon Technologies

    		 4,824 -
    RFQ
    		IQD016N08NM5CGATMA1

    Datenblatt

         		OptiMOS™ 5 9-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 31A (Ta), 323A (Tc) 6V, 10V 1.57mOhm @ 50A, 10V 3.8V @ 159µA 133 nC @ 10 V ±20V 9200 pF @ 40 V - 3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TTFN-9-U02
    STB9NK60ZT4

    STB9NK60ZT4

    MOSFET N-CH 600V 7A D2PAK

    STMicroelectronics

    		 845 -
    RFQ
    		STB9NK60ZT4

    Datenblatt

         		SuperMESH™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 950mOhm @ 3.5A, 10V 4.5V @ 100µA 53 nC @ 10 V ±30V 1110 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
    STW25N60M2-EP

    STW25N60M2-EP

    MOSFET N-CHANNEL 600V 18A TO247

    STMicroelectronics

    		 560 -
    RFQ
    		STW25N60M2-EP

    Datenblatt

         		MDmesh™ M2-EP TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 188mOhm @ 9A, 10V 4.75V @ 250µA 29 nC @ 10 V ±25V 1090 pF @ 100 V - 150W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    IQD020N10NM5CGATMA1

    IQD020N10NM5CGATMA1

    OPTIMOS 6 POWER-TRANSISTOR

    Infineon Technologies

    		 4,942 -
    RFQ
    		IQD020N10NM5CGATMA1

    Datenblatt

         		OptiMOS™ 5 9-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 26A (Ta), 273A (Tc) 6V, 10V 2.05mOhm @ 50A, 10V 3.8V @ 159µA 134 nC @ 10 V ±20V 9500 pF @ 50 V - 3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TTFN-9-U02
    XP8NA2R2CXT

    XP8NA2R2CXT

    MOSFET N-CH 80V 35A 168A PMPAK

    YAGEO XSEMI

    		 1,000 -
    RFQ
    		XP8NA2R2CXT

    Datenblatt

         		XP8NA2R2C 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 35A (Ta), 168A (Tc) 6V, 10V 2.2mOhm @ 20A, 10V 4V @ 250µA 179 nC @ 10 V ±20V 9328 pF @ 60 V - 5W (Ta), 113.6W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PMPAK® 5 x 6
    TP65H300G4LSGB-TR

    TP65H300G4LSGB-TR

    GANFET N-CH 650V 6.5A QFN8X8

    Transphorm

    		 2,893 -
    RFQ
    		TP65H300G4LSGB-TR

    Datenblatt

         		SuperGaN® 8-VDFN Exposed Pad Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 650 V 6.5A (Tc) 6V 312mOhm @ 6.5A, 6V 2.8V @ 500µA 8.8 nC @ 10 V ±12V 730 pF @ 400 V - 21W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (8x8)
    IPB180P04P403ATMA2

    IPB180P04P403ATMA2

    MOSFET P-CH 40V 180A TO263-7

    Infineon Technologies

    		 1,741 -
    RFQ
    		IPB180P04P403ATMA2

    Datenblatt

         		OptiMOS™ P2 TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) - 2.8mOhm @ 100A, 10V 4V @ 410µA 250 nC @ 10 V ±20V 17640 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-7-3
    IPB60R145CFD7ATMA1

    IPB60R145CFD7ATMA1

    MOSFET N-CH 600V 16A TO263-3-2

    Infineon Technologies

    		 994 -
    RFQ
    		IPB60R145CFD7ATMA1

    Datenblatt

         		CoolMOS™ CFD7 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 145mOhm @ 6.8A, 10V 4.5V @ 340µA 31 nC @ 10 V ±20V 1330 pF @ 400 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3-2
    IPB339N20NM6ATMA1

    IPB339N20NM6ATMA1

    MOSFET

    Infineon Technologies

    		 850 -
    RFQ
    		IPB339N20NM6ATMA1

    Datenblatt

         		OptiMOS™ 6 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 6.8A (Ta), 39A (Tc) 10V, 15V 31.8mOhm @ 26A, 15V 4.5V @ 52µA 24 nC @ 10 V ±20V 1600 pF @ 100 V - 3.8W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
    MCACL220N06YHE3-TP

    MCACL220N06YHE3-TP

    MOSFET N-CH 60 220A DFN5060-C

    Micro Commercial Co

    		 9,800 -
    RFQ
    		MCACL220N06YHE3-TP

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 220A (Tc) 4.5V, 10V 1.6mOhm @ 20A, 10V 2.5V @ 250µA 119 nC @ 10 V ±20V 7500 pF @ 30 V - 147W (Tj) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount DFN5060-C
    AONS66612T

    AONS66612T

    60V N-CHANNEL ALPHASGT

    Alpha & Omega Semiconductor Inc.

    		 5,937 -
    RFQ
    		AONS66612T

    Datenblatt

         		AlphaSGT™ 8-PowerSMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 48A (Ta), 100A (Tc) 6V, 10V 1.65mOhm @ 20A, 10V 3.5V @ 250µA 110 nC @ 10 V ±20V 5300 pF @ 30 V - 7.5W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-DFN (5x6)
    STL19N60M6

    STL19N60M6

    MOSFET N-CH 600V 11A PWRFLAT HV

    STMicroelectronics

    		 3,000 -
    RFQ
    		STL19N60M6

    Datenblatt

         		MDmesh™ M6 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 308mOhm @ 6.5A, 10V 4.75V @ 250µA 16.8 nC @ 10 V ±25V 650 pF @ 100 V - 90W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerFlat™ (8x8) HV
    STD80N450K6

    STD80N450K6

    N-CHANNEL 800 V, 380 MOHM TYP.,

    STMicroelectronics

    		 2,460 -
    RFQ
    		STD80N450K6

    Datenblatt

         		MDmesh™ K5 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 10A (Tc) 10V 450mOhm @ 5A, 10V 4V @ 100µA 17.3 nC @ 10 V ±30V 700 pF @ 400 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    PSMN2R6-100SSFJ

    PSMN2R6-100SSFJ

    NEXTPOWER 80/100V MOSFETS

    Nexperia USA Inc.

    		 2,000 -
    RFQ
    		PSMN2R6-100SSFJ

    Datenblatt

         		- SOT-1235 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 200A (Ta) 7V, 10V 2.6mOhm @ 25A, 10V 4V @ 1mA 191 nC @ 10 V ±20V 12838 pF @ 50 V - 341W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK88 (SOT1235)
    PSMN3R0-60BS,118

    PSMN3R0-60BS,118

    MOSFET N-CH 60V 100A D2PAK

    Nexperia USA Inc.

    		 3,875 -
    RFQ
    		PSMN3R0-60BS,118

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 3.2mOhm @ 25A, 10V 4V @ 1mA 130 nC @ 10 V ±20V 8079 pF @ 30 V - 306W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    SIHP23N60E-BE3

    SIHP23N60E-BE3

    N-CHANNEL 600V

    Vishay Siliconix

    		 994 -
    RFQ
    		SIHP23N60E-BE3

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 23A (Tc) 10V 158mOhm @ 12A, 10V 4V @ 250µA 95 nC @ 10 V ±30V 2418 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    Total 36284 Record«Prev1... 291292293294295296297298...1815Next»
    TomatoElec

    Suche

     TomatoElec

    Produkte

     TomatoElec

    Telefon

     TomatoElec

    Benutzer
    TomatoElec
    [email protected]
    0755-82798135