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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    NTMFS5C406NLT1G

    NTMFS5C406NLT1G

    MOSFET N-CH 40V 53A/362A 5DFN

    onsemi

    		 1,469 -
    RFQ
    		NTMFS5C406NLT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 53A (Ta), 362A (Tc) 4.5V, 10V 0.7mOhm @ 50A, 10V 2V @ 280µA 149 nC @ 10 V ±20V 9400 pF @ 20 V - 3.9W (Ta), 179W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    NVB260N65S3

    NVB260N65S3

    SF3 650V EASY 260MOHM D2PAK AUTO

    onsemi

    		 740 -
    RFQ
    		NVB260N65S3

    Datenblatt

         		SuperFET® III TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 260mOhm @ 6A, 10V 4.5V @ 290µA 24 nC @ 10 V ±30V 1010 pF @ 400 V - 90W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    IPA600N25NM3SXKSA1

    IPA600N25NM3SXKSA1

    MOSFET N-CH 250V 15A TO220

    Infineon Technologies

    		 276 -
    RFQ
    		IPA600N25NM3SXKSA1

    Datenblatt

         		OptiMOS™ 3 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 250 V 15A (Tc) 10V 60mOhm @ 15A, 10V 4V @ 89µA 29 nC @ 10 V ±20V 2300 pF @ 100 V - 38W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220 Full Pack
    IPP089N15NM6AKSA1

    IPP089N15NM6AKSA1

    TRENCH >=100V

    Infineon Technologies

    		 1,981 -
    RFQ
    		IPP089N15NM6AKSA1

    Datenblatt

         		OptiMOS™ 6 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 150 V 13.6A (Ta), 88A (Tc) 8V, 15V 8.4mOhm @ 32A, 15V 4V @ 73µA 38 nC @ 10 V ±20V 2700 pF @ 75 V - 3.8W (Ta), 158W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
    RCJ200N20TL

    RCJ200N20TL

    MOSFET N-CH 200V 20A LPTS

    Rohm Semiconductor

    		 976 -
    RFQ
    		RCJ200N20TL

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 20A (Tc) 10V 130mOhm @ 10A, 10V 5V @ 1mA 40 nC @ 10 V ±30V 1900 pF @ 25 V - 1.56W (Ta), 106W (Tc) 150°C (TJ) - - Surface Mount LPTS
    NTMFS010N10GTWG

    NTMFS010N10GTWG

    100V MVSOA IN PQFN56 PACKAGE

    onsemi

    		 2,900 -
    RFQ
    		NTMFS010N10GTWG

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 11A (Tc) 10V 10.8mOhm @ 31A, 10V 4V @ 164µA 58.5 nC @ 10 V ±20V 3950 pF @ 50 V - 3W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-PQFN (5x6)
    NVMFS4C302NWFT1G

    NVMFS4C302NWFT1G

    MOSFET N-CH 30V 43A/241A 5DFN

    onsemi

    		 1,500 -
    RFQ
    		NVMFS4C302NWFT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 43A (Ta), 241A (Tc) 4.5V, 10V 1.15mOhm @ 30A, 10V 2.2V @ 250µA 82 nC @ 10 V ±20V 5780 pF @ 15 V - 3.75W (Ta), 115W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 5-DFN (5x6) (8-SOFL)
    TK13A50D(STA4,Q,M)

    TK13A50D(STA4,Q,M)

    MOSFET N-CH 500V 13A TO220SIS

    Toshiba Semiconductor and Storage

    		 110 -
    RFQ
    		TK13A50D(STA4,Q,M)

    Datenblatt

         		π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 13A (Ta) 10V 400mOhm @ 6.5A, 10V 4V @ 1mA 38 nC @ 10 V ±30V 1800 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
    RS6G120BHTB1

    RS6G120BHTB1

    NCH 40V 210A, HSOP8, POWER MOSFE

    Rohm Semiconductor

    		 2,500 -
    RFQ
    		RS6G120BHTB1

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 6V, 10V 1.38mOhm @ 90A, 10V 4V @ 1mA 67 nC @ 10 V ±20V 4790 pF @ 20 V - 3W (Ta), 104W (Tc) 150°C (TJ) - - Surface Mount 8-HSOP
    SI7846DP-T1-GE3

    SI7846DP-T1-GE3

    MOSFET N-CH 150V 4A PPAK SO-8

    Vishay Siliconix

    		 1,914 -
    RFQ
    		SI7846DP-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 4A (Ta) 10V 50mOhm @ 5A, 10V 4.5V @ 250µA 36 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    FDPF035N06B-F154

    FDPF035N06B-F154

    MOSFET N-CH 60V 88A TO220F

    onsemi

    		 985 -
    RFQ
    		FDPF035N06B-F154

    Datenblatt

         		PowerTrench® TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 60 V 88A (Tc) - 3.5mOhm @ 88A, 10V 4V @ 250µA 99 nC @ 10 V ±20V 8030 pF @ 30 V - 46.3W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220F
    SIHA20N50E-E3

    SIHA20N50E-E3

    MOSFET N-CH 500V 19A TO220

    Vishay Siliconix

    		 496 -
    RFQ
    		SIHA20N50E-E3

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 19A (Tc) 10V 184mOhm @ 10A, 10V 4V @ 250µA 92 nC @ 10 V ±30V 1640 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
    NTMJS1D2N04CLTWG

    NTMJS1D2N04CLTWG

    MOSFET N-CH 40V 41A/237A 8LFPAK

    onsemi

    		 3,000 -
    RFQ
    		NTMJS1D2N04CLTWG

    Datenblatt

         		- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 41A (Ta), 237A (Tc) 4.5V, 10V 1.2mOhm @ 50A, 10V 2V @ 170µA 93 nC @ 10 V ±20V 5600 pF @ 25 V - 3.8W (Ta), 128W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-LFPAK
    IPI120N04S401AKSA1

    IPI120N04S401AKSA1

    MOSFET N-CH 40V 120A TO262-3

    Infineon Technologies

    		 225 -
    RFQ
    		IPI120N04S401AKSA1

    Datenblatt

         		OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 1.9mOhm @ 100A, 10V 4V @ 140µA 176 nC @ 10 V ±20V 14000 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
    SIRS4302DP-T1-GE3

    SIRS4302DP-T1-GE3

    N-CHANNEL 30 V (D-S) MOSFET POWE

    Vishay Siliconix

    		 11,921 -
    RFQ
    		SIRS4302DP-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 87A (Ta), 478A (Tc) 4.5V, 10V 0.57mOhm @ 20A, 10V 2.2V @ 250µA 230 nC @ 10 V +20V, -16V 10150 pF @ 15 V - 6.9W (Ta), 208W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    RS6L120BHTB1

    RS6L120BHTB1

    NCH 60V 150A, HSOP8, POWER MOSFE

    Rohm Semiconductor

    		 2,500 -
    RFQ
    		RS6L120BHTB1

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 6V, 10V 2.7mOhm @ 90A, 10V 4V @ 1mA 51 nC @ 10 V ±20V 4080 pF @ 30 V - 3W (Ta), 104W (Tc) 150°C (TJ) - - Surface Mount 8-HSOP
    PSMN5R0-80BS,118

    PSMN5R0-80BS,118

    MOSFET N-CH 80V 100A D2PAK

    Nexperia USA Inc.

    		 4,257 -
    RFQ
    		PSMN5R0-80BS,118

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 10V 5.1mOhm @ 25A, 10V 4V @ 1mA 101 nC @ 10 V ±20V 6793 pF @ 40 V - 270W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
    IPI60R199CPXKSA2

    IPI60R199CPXKSA2

    HIGH POWER_LEGACY

    Infineon Technologies

    		 500 -
    RFQ
    		IPI60R199CPXKSA2

    Datenblatt

         		CoolMOS® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 199mOhm @ 9.9A, 10V 3.5V @ 660µA 43 nC @ 10 V ±20V 1520 pF @ 100 V - 139W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3-1
    SIHB25N50E-GE3

    SIHB25N50E-GE3

    MOSFET N-CH 500V 26A TO263

    Vishay Siliconix

    		 1,000 -
    RFQ
    		SIHB25N50E-GE3

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 500 V 26A (Tc) 10V 145mOhm @ 12A, 10V 4V @ 250µA 86 nC @ 10 V ±30V 1980 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    XPJR6604PB,LXHQ

    XPJR6604PB,LXHQ

    40V; UMOS9; 0.66MOHM; S-TOGL

    Toshiba Semiconductor and Storage

    		 7,017 -
    RFQ
    		XPJR6604PB,LXHQ

    Datenblatt

         		U-MOSIX-H 5-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 200A (Ta) 6V, 10V 0.66mOhm @ 100A, 10V 3V @ 1mA 128 nC @ 10 V ±20V 11380 pF @ 10 V - 375W (Tc) 175°C Automotive AEC-Q101 Surface Mount S-TOGL™
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