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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    TPW1500CNH,L1Q

    TPW1500CNH,L1Q

    PB-F POWER MOSFET TRANSISTOR DSO

    Toshiba Semiconductor and Storage

    		 6,746 -
    RFQ
    		TPW1500CNH,L1Q

    Datenblatt

         		U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 38A (Tc) 10V 15.4mOhm @ 19A, 10V 4V @ 1mA 22 nC @ 10 V ±20V 2200 pF @ 75 V - 800mW (Ta), 142W (Tc) 150°C - - Surface Mount 8-DSOP Advance
    NVMFS5C430NWFET1G

    NVMFS5C430NWFET1G

    T6-40V N 1.7 MOHMS SL

    onsemi

    		 1,500 -
    RFQ
    		NVMFS5C430NWFET1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 35A (Ta), 185A (Tc) 10V 1.7mOhm @ 50A, 10V 3.5V @ 250µA 47 nC @ 10 V ±20V 3300 pF @ 25 V - 3.8W (Ta), 106W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 5-DFNW (4.9x5.9) (8-SOFL-WF)
    IPP020N06NXKSA1

    IPP020N06NXKSA1

    TRENCH 40<-<100V

    Infineon Technologies

    		 498 -
    RFQ
    		IPP020N06NXKSA1

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 6V, 10V 2mOhm @ 100A, 10V 3.3V @ 143µA 124 nC @ 10 V ±20V 9750 pF @ 30 V - 3W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
    IPP120N04S402AKSA1

    IPP120N04S402AKSA1

    MOSFET N-CH 40V 120A TO220-3

    Infineon Technologies

    		 302 -
    RFQ
    		IPP120N04S402AKSA1

    Datenblatt

         		OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 2.1mOhm @ 100A, 10V 4V @ 110µA 134 nC @ 10 V ±20V 10740 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
    IPP70N12S311AKSA1

    IPP70N12S311AKSA1

    MOSFET N-CHANNEL_100+

    Infineon Technologies

    		 280 -
    RFQ
    		IPP70N12S311AKSA1

    Datenblatt

         		OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 120 V 70A (Tc) 10V 11.6mOhm @ 70A, 10V 4V @ 83µA 65 nC @ 10 V ±20V 4355 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO220-3-1
    DIT195N08

    DIT195N08

    MOSFET TO220AB N 85V 0.0035OHM

    Diotec Semiconductor

    		 981 -
    RFQ
    		DIT195N08

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 85 V 195A (Tc) 10V 4.95mOhm @ 40A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 16880 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    PSMB050N10NS2_R2_00601

    PSMB050N10NS2_R2_00601

    100V/ 5MOHM/ LOW FOM MOSFET

    Panjit International Inc.

    		 642 -
    RFQ
    		PSMB050N10NS2_R2_00601

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tj) 6V, 10V 5mOhm @ 50A, 10V 3.8V @ 270µA 53 nC @ 10 V ±20V 3910 pF @ 50 V - 138W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263
    MCGWF60N04YHE3-TP

    MCGWF60N04YHE3-TP

    POWER MOSFET

    Micro Commercial Co

    		 4,940 -
    RFQ
    		MCGWF60N04YHE3-TP

    Datenblatt

         		- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 10V 3.9mOhm @ 40A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 2144 pF @ 20 V - 93W (Tj) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN3333-8
    NTMFS5H409NLT3G

    NTMFS5H409NLT3G

    MOSFET N-CH 40V 41A/270A 5DFN

    onsemi

    		 9,829 -
    RFQ
    		NTMFS5H409NLT3G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 41A (Ta), 270A (Tc) 4.5V, 10V 1.1mOhm @ 50A, 10V 2V @ 250µA 89 nC @ 10 V ±20V 5700 pF @ 20 V - 3.2W (Ta), 140W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    PJD55N04V-AU_L2_002A1

    PJD55N04V-AU_L2_002A1

    40V N-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 3,000 -
    RFQ
    		PJD55N04V-AU_L2_002A1

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 21.5A (Ta), 128A (Tc) 7V, 10V 3.6mOhm @ 20A, 10V 3.5V @ 50µA 34 nC @ 10 V ±20V 2540 pF @ 25 V - 3W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252AA
    PSMP050N10NS2_T0_00601

    PSMP050N10NS2_T0_00601

    100V/ 5MOHM/ LOW FOM MOSFET

    Panjit International Inc.

    		 1,827 -
    RFQ
    		PSMP050N10NS2_T0_00601

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 6V, 10V 5mOhm @ 50A, 10V 3.8V @ 270µA 53 nC @ 10 V ±20V 3910 pF @ 50 V - 138W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB-L
    MCGWF60N06YHE3-TP

    MCGWF60N06YHE3-TP

    POWER MOSFET

    Micro Commercial Co

    		 5,000 -
    RFQ
    		MCGWF60N06YHE3-TP

    Datenblatt

         		- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 4.5V, 10V 6mOhm @ 20A, 10V 2.5V @ 250µA 34.5 nC @ 10 V ±20V 1666 pF @ 30 V - 60W (Tj) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN3333-8
    FDMS4D4N08C

    FDMS4D4N08C

    MOSFET N-CH 80V 123A 8PQFN

    onsemi

    		 2,214 -
    RFQ
    		FDMS4D4N08C

    Datenblatt

         		PowerTrench® 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 123A (Tc) 6V, 10V 4.3mOhm @ 44A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 4090 pF @ 40 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6), Power56
    NVMFWS2D5N08XT1G

    NVMFWS2D5N08XT1G

    T10 80V STD NCH MOSFET SO8FL PRE

    onsemi

    		 1,395 -
    RFQ
    		NVMFWS2D5N08XT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 156A (Tc) 10V 2.55mOhm @ 37A, 10V 3.6V @ 184µA 45 nC @ 10 V ±20V 3200 pF @ 40 V - 133W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 5-DFNW (4.9x5.9) (8-SOFL-WF)
    IPA90R800C3XKSA2

    IPA90R800C3XKSA2

    MOSFET N-CH 900V 6.9A TO220

    Infineon Technologies

    		 474 -
    RFQ
    		IPA90R800C3XKSA2

    Datenblatt

         		CoolMOS™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 900 V 6.9A (Tc) 10V 800mOhm @ 4.1A, 10V 3.5V @ 460µA 42 nC @ 10 V ±20V 1100 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
    IPP90R800C3XKSA2

    IPP90R800C3XKSA2

    MOSFET N-CH 900V 6.9A TO220-3

    Infineon Technologies

    		 458 -
    RFQ
    		IPP90R800C3XKSA2

    Datenblatt

         		CoolMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 900 V 6.9A (Tc) 10V 800mOhm @ 4.1A, 10V 3.5V @ 460µA 42 nC @ 10 V ±20V 1100 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
    NVD260N65S3T4G

    NVD260N65S3T4G

    SF3 EASY AUTO 260MOHM DPAK

    onsemi

    		 3,594 -
    RFQ
    		NVD260N65S3T4G

    Datenblatt

         		SuperFET® III TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 260mOhm @ 6A, 10V 4.5V @ 290µA 23.5 nC @ 10 V ±30V 1042 pF @ 400 V - 90W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
    DMTH61M8LPSQ-13

    DMTH61M8LPSQ-13

    MOSFET BVDSS: 41V~60V POWERDI506

    Diodes Incorporated

    		 2,490 -
    RFQ
    		DMTH61M8LPSQ-13

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 225A (Tc) 4.5V, 10V 1.6mOhm @ 30A, 10V 3V @ 250µA 115.5 nC @ 10 V ±20V 8320 pF @ 30 V - 3.2W (Ta), 187.5W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerDI5060-8 (Type K)
    NTMJS1D7N04CTWG

    NTMJS1D7N04CTWG

    MOSFET N-CH 40V 35A/185A 8LFPAK

    onsemi

    		 3,000 -
    RFQ
    		NTMJS1D7N04CTWG

    Datenblatt

         		- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 35A (Ta), 185A (Tc) 10V 1.7mOhm @ 50A, 10V 3.5V @ 130µA 47 nC @ 10 V ±20V 3300 pF @ 25 V - 3.8W (Ta), 106W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-LFPAK
    IAUCN04S6N007TATMA1

    IAUCN04S6N007TATMA1

    MOSFET_(20V 40V)

    Infineon Technologies

    		 1,624 -
    RFQ
    		IAUCN04S6N007TATMA1

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
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