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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    SIR872ADP-T1-RE3

    SIR872ADP-T1-RE3

    MOSFET N-CH 150V 53.7A PPAK SO-8

    Vishay Siliconix

    		 2,901 -
    RFQ
    		SIR872ADP-T1-RE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 53.7A (Tc) 7.5V, 10V 18mOhm @ 20A, 10V 4.5V @ 250µA 47 nC @ 10 V ±20V 1286 pF @ 75 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    NVMFS6H801NLWFT1G

    NVMFS6H801NLWFT1G

    MOSFET N-CH 80V 24A/160A 5DFN

    onsemi

    		 1,400 -
    RFQ
    		NVMFS6H801NLWFT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 24A (Ta), 160A (Tc) 4.5V, 10V 2.7mOhm @ 50A, 10V 2V @ 250µA 90 nC @ 10 V ±20V 5126 pF @ 40 V - 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 5-DFNW (4.9x5.9) (8-SOFL-WF)
    NTMFS0D5N04XMT1G

    NTMFS0D5N04XMT1G

    40V T10M IN S08FL HEFET GEN 2 PA

    onsemi

    		 1,255 -
    RFQ
    		NTMFS0D5N04XMT1G

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 414A (Tc) 10V 0.52mOhm @ 50A, 10V 3.5V @ 240µA 97.5 nC @ 10 V ±20V 6267 pF @ 20 V - 163W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-DFN (5x6)
    IPB80N06S209ATMA2

    IPB80N06S209ATMA2

    MOSFET N-CH 55V 80A TO263-3

    Infineon Technologies

    		 777 -
    RFQ
    		IPB80N06S209ATMA2

    Datenblatt

         		OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 8.8mOhm @ 50A, 10V 4V @ 125µA 80 nC @ 10 V ±20V 2360 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
    IPA65R310CFDXKSA2

    IPA65R310CFDXKSA2

    MOSFET N-CH 650V 11.4A TO220

    Infineon Technologies

    		 536 -
    RFQ
    		IPA65R310CFDXKSA2

    Datenblatt

         		CoolMOS™ CFD2 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 11.4A (Tc) 10V 310mOhm @ 4.4A, 10V 4.5V @ 400µA 41 nC @ 10 V ±20V 1100 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
    IPP65R310CFDXKSA2

    IPP65R310CFDXKSA2

    MOSFET N-CH 650V 11.4A TO220-3

    Infineon Technologies

    		 500 -
    RFQ
    		IPP65R310CFDXKSA2

    Datenblatt

         		CoolMOS™ CFD2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 11.4A (Tc) 10V 310mOhm @ 4.4A, 10V 4.5V @ 400µA 41 nC @ 10 V ±20V 1100 pF @ 100 V - 104.2W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    IPI60R190C6XKSA1

    IPI60R190C6XKSA1

    MOSFET N-CH 600V 20.2A TO262-3

    Infineon Technologies

    		 495 -
    RFQ
    		IPI60R190C6XKSA1

    Datenblatt

         		CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20.2A (Tc) 10V 190mOhm @ 9.5A, 10V 3.5V @ 630µA 63 nC @ 10 V ±20V 1400 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3
    PJD60N04S-AU_L2_002A1

    PJD60N04S-AU_L2_002A1

    40V N-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 2,840 -
    RFQ
    		PJD60N04S-AU_L2_002A1

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 22.5A (Ta), 140A (Tc) 4.5V, 10V 3.3mOhm @ 20A, 10V 2.3V @ 50µA 41 nC @ 10 V ±20V 2862 pF @ 25 V - 3W (Ta), 115W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252AA
    STI20N65M5

    STI20N65M5

    MOSFET N-CH 650V 18A I2PAK

    STMicroelectronics

    		 1,000 -
    RFQ
    		STI20N65M5

    Datenblatt

         		MDmesh™ V TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 190mOhm @ 9A, 10V 5V @ 250µA 36 nC @ 10 V ±25V 1434 pF @ 100 V - 130W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262 (I2PAK)
    MCP70N15YA-BP

    MCP70N15YA-BP

    N-CHANNEL MOSFET,TO-220AB(H)

    Micro Commercial Co

    		 4,994 -
    RFQ
    		MCP70N15YA-BP

    Datenblatt

         		- TO-220-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 70A (Tc) 10V 21mOhm @ 35A, 10V 5V @ 250µA 38 nC @ 10 V ±20V 2511 pF @ 75 V - 136W (Tj) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB (H)
    MCGWF20P06YHE3-TP

    MCGWF20P06YHE3-TP

    POWER MOSFET

    Micro Commercial Co

    		 3,400 -
    RFQ
    		MCGWF20P06YHE3-TP

    Datenblatt

         		- 8-PowerWDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 4.5V, 10V 26mOhm @ 20A, 10V 2.5V @ 250µA 25 nC @ 10 V ±20V 1483 pF @ 25 V - 39W (Tj) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount DFN3333-8
    PSMP032N08NS1_T0_00601

    PSMP032N08NS1_T0_00601

    80V/ 3.4MOHM / TJMAX 175C MV MOS

    Panjit International Inc.

    		 1,966 -
    RFQ
    		PSMP032N08NS1_T0_00601

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 166A (Tc) 7V, 10V 3.4mOhm @ 50A, 10V 3.75V @ 250µA 76 nC @ 7 V ±20V 7430 pF @ 40 V - 156W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB-L
    IPU95R450P7AKMA1

    IPU95R450P7AKMA1

    MOSFET N-CH 950V 14A TO251-3

    Infineon Technologies

    		 1,500 -
    RFQ
    		IPU95R450P7AKMA1

    Datenblatt

         		CoolMOS™ P7 TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 950 V 14A (Tc) 10V 450mOhm @ 7.2A, 10V 3.5V @ 360µA 35 nC @ 10 V ±20V 1053 pF @ 400 V - 104W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
    IPP076N15N5XKSA1

    IPP076N15N5XKSA1

    TRENCH >=100V

    Infineon Technologies

    		 500 -
    RFQ
    		IPP076N15N5XKSA1

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 150 V 112A (Tc) 8V, 10V 7.6mOhm @ 56A, 10V 4.6V @ 160µA 61 nC @ 10 V ±20V 4700 pF @ 75 V - 214W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
    SIDR608DP-T1-RE3

    SIDR608DP-T1-RE3

    MOSFET N-CH 45V 51A/208A PPAK

    Vishay Siliconix

    		 6,000 -
    RFQ
    		SIDR608DP-T1-RE3

    Datenblatt

         		TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 45 V 51A (Ta), 208A (Tc) 4.5V, 10V 1.2mOhm @ 20A, 10V 2.3V @ 250µA 167 nC @ 10 V +20V, -16V 8900 pF @ 20 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8DC
    NTMFSC006N12MC

    NTMFSC006N12MC

    120V PTNG IN 5X6 DUALCOOL

    onsemi

    		 2,935 -
    RFQ
    		NTMFSC006N12MC

    Datenblatt

         		DUAL COOL® 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120 V 14A (Ta), 92A (Tc) 10V 6.1mOhm @ 44A, 10V 4V @ 250µA 39 nC @ 10 V ±20V 3040 pF @ 60 V - 2.7W (Ta), 104W (Tc) 150°C (TJ) - - Surface Mount 8-DFN (5x6.15)
    RS1N110ATTB1

    RS1N110ATTB1

    PCH -80V -43A, HSOP8, POWER MOSF

    Rohm Semiconductor

    		 2,500 -
    RFQ
    		RS1N110ATTB1

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 80 V 11A (Ta), 43A (Tc) 6V, 10V 21mOhm @ 11A, 10V 4V @ 1mA 135 nC @ 10 V ±20V 5800 pF @ 40 V - 3W (Ta), 40W (Tc) 150°C (TJ) - - Surface Mount 8-HSOP
    NVMFS5C646NLWFAFT1G

    NVMFS5C646NLWFAFT1G

    MOSFET N-CH 60V 20A/93A 5DFN

    onsemi

    		 1,475 -
    RFQ
    		NVMFS5C646NLWFAFT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 20A (Ta), 93A (Tc) 4.5V, 10V 4.7mOhm @ 50A, 10V 2V @ 250µA 33.7 nC @ 10 V ±20V 2164 pF @ 25 V - 3.7W (Ta), 79W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 5-DFNW (4.9x5.9) (8-SOFL-WF)
    IPB120N04S4L02ATMA1

    IPB120N04S4L02ATMA1

    MOSFET N-CH 40V 120A D2PAK

    Infineon Technologies

    		 455 -
    RFQ
    		IPB120N04S4L02ATMA1

    Datenblatt

         		OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 1.7mOhm @ 100A, 10V 2.2V @ 110µA 190 nC @ 10 V +20V, -16V 14560 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-3
    NTMJST1D4N06CLTXG

    NTMJST1D4N06CLTXG

    TRENCH 6 60V LFPAK 5X7

    onsemi

    		 3,000 -
    RFQ
    		NTMJST1D4N06CLTXG

    Datenblatt

         		- 10-PowerLSOP (0.209", 5.30mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 42A (Ta), 198A (Tc) 10V 1.49mOhm @ 50A, 10V 2V @ 250µA 92.2 nC @ 10 V ±20V 6555 pF @ 25 V - 5.3W (Ta), 116W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 10-TCPAK
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