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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    MCAC120N04YHE3-TP

    MCAC120N04YHE3-TP

    MOSFET N-CH 40 120A DFN5060

    Micro Commercial Co

    		 5,000 -
    RFQ
    		MCAC120N04YHE3-TP

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 6V, 10V 3.1mOhm @ 20A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 2144 pF @ 20 V - 83W (Tj) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN5060
    IQE004NE1LM7CGATMA1

    IQE004NE1LM7CGATMA1

    TRENCH <= 40V

    Infineon Technologies

    		 9,900 -
    RFQ
    		IQE004NE1LM7CGATMA1

    Datenblatt

         		OptiMOS™ 7 9-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15 V 58A (Ta), 379A (Tc) 4.5V, 7V 0.45mOhm @ 30A, 7V 2V @ 432µA 55 nC @ 7 V ±7V 6240 pF @ 7.5 V - 2.1W (Ta), 89W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TTFN-9-3
    ISC078N12NM6ATMA1

    ISC078N12NM6ATMA1

    TRENCH >=100V

    Infineon Technologies

    		 4,885 -
    RFQ
    		ISC078N12NM6ATMA1

    Datenblatt

         		OptiMOS™ 6 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120 V 13.2A (Ta), 85A (Tc) 8V, 10V 7.8mOhm @ 37A, 10V 3.6V @ 49.6µA 26 nC @ 10 V ±20V 2000 pF @ 60 V - 3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount SuperSO8
    IQE004NE1LM7ATMA1

    IQE004NE1LM7ATMA1

    TRENCH <= 40V

    Infineon Technologies

    		 4,360 -
    RFQ
    		IQE004NE1LM7ATMA1

    Datenblatt

         		OptiMOS™ 7 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15 V 58A (Ta), 379A (Tc) 4.5V, 7V 0.45mOhm @ 30A, 7V 2V @ 432µA 55 nC @ 7 V ±7V 6240 pF @ 7.5 V - 2.1W (Ta), 89W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TSON-8-5
    NTMYS2D1N04CLTWG

    NTMYS2D1N04CLTWG

    MOSFET N-CH 40V 258A

    onsemi

    		 3,000 -
    RFQ
    		NTMYS2D1N04CLTWG

    Datenblatt

         		- SOT-1023, 4-LFPAK Tape & Reel (TR) Active - - - 29A (Ta), 132A (Tc) - - - - - - - - - - - Surface Mount LFPAK4 (5x6)
    PJQ5540V-AU_R2_002A1

    PJQ5540V-AU_R2_002A1

    40V N-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 2,730 -
    RFQ
    		PJQ5540V-AU_R2_002A1

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 29.7A (Ta), 174A (Tc) 7V, 10V 2.1mOhm @ 20A, 10V 3.5V @ 50µA 63 nC @ 10 V ±20V 4690 pF @ 25 V - 3.3W (Ta), 115.4W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN5060X-8L
    DMTH10H003SPSW-13

    DMTH10H003SPSW-13

    MOSFET BVDSS: 61V~100V POWERDI50

    Diodes Incorporated

    		 2,150 -
    RFQ
    		DMTH10H003SPSW-13

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 166A (Tc) 6V, 10V 3mOhm @ 30A, 10V 4V @ 250µA 85 nC @ 10 V ±20V 5542 pF @ 50 V - 2.6W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerDI5060-8 (Type Q)
    BUK766R0-60E,118

    BUK766R0-60E,118

    MOSFET N-CH 60V 75A D2PAK

    Nexperia USA Inc.

    		 1,534 -
    RFQ
    		BUK766R0-60E,118

    Datenblatt

         		TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 10V 6mOhm @ 25A, 10V 4V @ 1mA 62 nC @ 10 V ±20V 4520 pF @ 25 V - 182W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK
    CDMSJ22010-650 SL

    CDMSJ22010-650 SL

    SUPER JUNCTION MOSFETS

    Central Semiconductor Corp

    		 500 -
    RFQ
    		CDMSJ22010-650 SL

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 10A (Tc) 10V 390mOhm @ 5A, 10V 4V @ 250µA 19 nC @ 10 V 30V 726 pF @ 400 V - 29.5W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    SIJ4819DP-T1-GE3

    SIJ4819DP-T1-GE3

    P-CHANNEL 80-V (D-S) MOSFET POWE

    Vishay Siliconix

    		 5,996 -
    RFQ
    		SIJ4819DP-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 80 V 11.5A (Ta), 44.4A (Tc) 4.5V, 10V 20.7mOhm @ 10A, 10V 2.6V @ 250µA 65 nC @ 10 V ±20V 3420 pF @ 40 V - 5W (Ta), 73.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    PJQ5592-AU_R2_002A1

    PJQ5592-AU_R2_002A1

    150V N-CHANNEL ENHANCEMENT MODE

    Panjit International Inc.

    		 3,000 -
    RFQ
    		PJQ5592-AU_R2_002A1

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    R6010YNXC7G

    R6010YNXC7G

    600V 7A TO-220FM, HIGH-SPEED SWI

    Rohm Semiconductor

    		 983 -
    RFQ
    		R6010YNXC7G

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V, 12V 390mOhm @ 4.2A, 12V 6V @ 1.2mA 15 nC @ 10 V ±30V 600 pF @ 100 V - 47W (Tc) 150°C (TJ) - - Through Hole TO-220FM
    R6027YNX3C16

    R6027YNX3C16

    NCH 600V 27A, TO-220AB, POWER MO

    Rohm Semiconductor

    		 980 -
    RFQ
    		R6027YNX3C16

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 27A (Tc) 10V, 12V 135mOhm @ 7A, 12V 6V @ 2mA 40 nC @ 10 V ±30V 1670 pF @ 100 V - 245W (Tc) 150°C (TJ) - - Through Hole TO-220AB
    TSM60NC196CI C0G

    TSM60NC196CI C0G

    600V, 20A, SINGLE N-CHANNEL POWE

    Taiwan Semiconductor Corporation

    		 3,840 -
    RFQ
    		TSM60NC196CI C0G

    Datenblatt

         		- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 196mOhm @ 9.5A, 10V 5V @ 1mA 39 nC @ 10 V ±30V 1535 pF @ 300 V - 70W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220
    IRFSL5615PBF

    IRFSL5615PBF

    MOSFET N-CH 150V 33A TO262

    Infineon Technologies

    		 964 -
    RFQ
    		IRFSL5615PBF

    Datenblatt

         		- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 42mOhm @ 21A, 10V 5V @ 100µA 40 nC @ 10 V ±20V 1750 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-262
    IQE220N15NM5CGATMA1

    IQE220N15NM5CGATMA1

    TRENCH >=100V

    Infineon Technologies

    		 4,970 -
    RFQ
    		IQE220N15NM5CGATMA1

    Datenblatt

         		OptiMOS™ 5 9-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 44A (Tc) 10V 22mOhm @ 16A, 10V 4.6V @ 46µA 18.3 nC @ 10 V ±20V 1400 pF @ 75 V - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TTFN-9-3
    IQE220N15NM5ATMA1

    IQE220N15NM5ATMA1

    TRENCH >=100V

    Infineon Technologies

    		 5,000 -
    RFQ
    		IQE220N15NM5ATMA1

    Datenblatt

         		OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 7A (Ta), 44A (Tc) 8V, 10V 22mOhm @ 16A, 10V 4.6V @ 46µA 18 nC @ 10 V ±20V 1400 pF @ 75 V - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSON-8-5
    XPJ1R004PB,LXHQ

    XPJ1R004PB,LXHQ

    40V; UMOS9; MOSFET 1MOHM; L-TOGL

    Toshiba Semiconductor and Storage

    		 2,975 -
    RFQ
    		XPJ1R004PB,LXHQ

    Datenblatt

         		- 5-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Ta) 6V, 10V 1mOhm @ 80A, 10V 3V @ 500µA 84 nC @ 10 V ±20V 6890 pF @ 10 V - 223W (Tc) 175°C Automotive AEC-Q101 Surface Mount S-TOGL™
    XP10N3R8IT

    XP10N3R8IT

    FET N-CH 100V 67.7A TO220CFM

    YAGEO XSEMI

    		 1,000 -
    RFQ
    		XP10N3R8IT

    Datenblatt

         		XP10N3R8 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 100 V 67.7A (Ta) 10V 3.88mOhm @ 35A, 10V 4V @ 250µA 131 nC @ 10 V ±20V 6560 pF @ 80 V - 1.92W (Ta), 32.8W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220CFM
    SIHP14N60E-BE3

    SIHP14N60E-BE3

    N-CHANNEL 600V

    Vishay Siliconix

    		 972 -
    RFQ
    		SIHP14N60E-BE3

    Datenblatt

         		E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 309mOhm @ 7A, 10V 4V @ 250µA 64 nC @ 10 V ±30V 1205 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
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