FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
NVMFS5C456NWFT1G

NVMFS5C456NWFT1G

MOSFET N-CH 40V 20A/80A 5DFN

onsemi

1,500 -
RFQ
NVMFS5C456NWFT1G

Datenblatt

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 20A (Ta), 80A (Tc) 10V 4.5mOhm @ 35A, 10V 3.5V @ 250µA 18 nC @ 10 V ±20V 1150 pF @ 25 V - 3.6W (Ta), 55W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
NVMFWS005N10MCLT1G

NVMFWS005N10MCLT1G

PTNG 100V LL SO8FL

onsemi

300 -
RFQ
NVMFWS005N10MCLT1G

Datenblatt

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 18.4A (Ta), 108A (Tc) 4.5V, 10V 5.1mOhm @ 34A, 10V 3V @ 192µA 55 nC @ 10 V ±20V 4100 pF @ 50 V - 3.8W (Ta), 131W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 5-DFNW (4.9x5.9) (8-SOFL-WF)
PJQ5572A-AU_R2_002A1

PJQ5572A-AU_R2_002A1

100V N-CHANNEL ENHANCEMENT MODE

Panjit International Inc.

3,000 -
RFQ
PJQ5572A-AU_R2_002A1

Datenblatt

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
XP6NA2R4IT

XP6NA2R4IT

MOSFET N-CH 60V 93A TO220CFM

YAGEO XSEMI

1,000 -
RFQ
XP6NA2R4IT

Datenblatt

XP6NA2R4 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 60 V 93A (Tc) 10V 2.4mOhm @ 40A, 10V 4V @ 250µA 192 nC @ 10 V ±20V 11600 pF @ 50 V - 1.92W (Ta), 34.7W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220CFM
IPA60R210CFD7XKSA1

IPA60R210CFD7XKSA1

LOW POWER_NEW

Infineon Technologies

500 -
RFQ
IPA60R210CFD7XKSA1

Datenblatt

- - Tube Active - - - 7A (Tc) - - - - - - - - - - - - -
TPH4R606NH,L1Q

TPH4R606NH,L1Q

MOSFET N-CH 60V 32A 8SOP

Toshiba Semiconductor and Storage

4,625 -
RFQ
TPH4R606NH,L1Q

Datenblatt

U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 32A (Ta) 6.5V, 10V 4.6mOhm @ 16A, 10V 4V @ 500µA 49 nC @ 10 V ±20V 3965 pF @ 30 V - 1.6W (Ta), 63W (Tc) 150°C (TJ) - - Surface Mount 8-SOP Advance (5x5)
PJD45P03E-AU_L2_006A1

PJD45P03E-AU_L2_006A1

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3,000 -
RFQ
PJD45P03E-AU_L2_006A1

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 11.2A (Ta), 42A (Tc) 4.5V, 10V 15mOhm @ 20A, 10V 2.5V @ 250µA 32 nC @ 10 V ±25V 1270 pF @ 25 V - 3W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252AA
MCB95N04YHE3-TP

MCB95N04YHE3-TP

N-CHANNEL MOSFET,D2-PAK

Micro Commercial Co

1,595 -
RFQ
MCB95N04YHE3-TP

Datenblatt

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 95A (Tc) 10V 3mOhm @ 20A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 2138 pF @ 20 V - 83W (Tj) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK
NVMFS4C03NWFT1G

NVMFS4C03NWFT1G

MOSFET N-CH 30V 31.4A/143A 5DFN

onsemi

1,422 -
RFQ
NVMFS4C03NWFT1G

Datenblatt

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 31.4A (Ta), 143A (Tc) 4.5V, 10V 2.1mOhm @ 30A, 10V 2.2V @ 250µA 45.2 nC @ 10 V ±20V 3071 pF @ 15 V - 3.71W (Ta), 77W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
XP10N3R8P

XP10N3R8P

MOSFET N-CH 100V 130A TO220

YAGEO XSEMI

991 -
RFQ
XP10N3R8P

Datenblatt

XP10N3R8 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 130A (Tc) 10V 3.88mOhm @ 60A, 10V 4V @ 250µA 136 nC @ 10 V ±20V 6560 pF @ 80 V - 2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
NTMYS6D2N06CLTWG

NTMYS6D2N06CLTWG

MOSFET N-CH 60V 4LFPAK

onsemi

3,000 -
RFQ
NTMYS6D2N06CLTWG

Datenblatt

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Ta), 71A (Tc) - - - - - - - - - - - Surface Mount LFPAK4 (5x6)
DMP22M2UPS-13

DMP22M2UPS-13

MOSFET P-CH 20V 60A PWRDI5060-8

Diodes Incorporated

2,250 -
RFQ
DMP22M2UPS-13

Datenblatt

- 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 60A (Tc) 2.5V, 10V 2.5mOhm @ 25A, 10V 1.4V @ 250µA 476 nC @ 10 V ±12V 12826 pF @ 10 V - 2.3W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerDI5060-8 (Type K)
IPI65R380C6XKSA1

IPI65R380C6XKSA1

MOSFET N-CH 650V 10.6A TO262-3

Infineon Technologies

500 -
RFQ
IPI65R380C6XKSA1

Datenblatt

CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 650 V 10.6A (Tc) 10V 380mOhm @ 3.2A, 10V 3.5V @ 320µA 39 nC @ 10 V ±20V 710 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3
IPAN60R180CM8XKSA1

IPAN60R180CM8XKSA1

IPAN60R180CM8XKSA1

Infineon Technologies

256 -
RFQ

-

CoolMOS™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Tj) 10V 180mOhm @ 5.6A, 10V 4.7V @ 140µA 17 nC @ 10 V ±20V 743 pF @ 400 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220 Full Pack
IPP60R180CM8XKSA1

IPP60R180CM8XKSA1

IPP60R180CM8XKSA1

Infineon Technologies

135 -
RFQ

-

CoolMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 180mOhm @ 5.6A, 10V 4.7V @ 140µA 17 nC @ 10 V ±20V 743 pF @ 400 V - 142W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-1
TK7P60W,RVQ

TK7P60W,RVQ

MOSFET N CH 600V 7A DPAK

Toshiba Semiconductor and Storage

1,988 -
RFQ
TK7P60W,RVQ

Datenblatt

DTMOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Ta) 10V 600mOhm @ 3.5A, 10V 3.7V @ 350µA 15 nC @ 10 V ±30V 490 pF @ 300 V - 60W (Tc) 150°C (TJ) - - Surface Mount DPAK
CDMSJ2207.3-650 SL

CDMSJ2207.3-650 SL

SUPER JUNCTION MOSFETS

Central Semiconductor Corp

500 -
RFQ
CDMSJ2207.3-650 SL

Datenblatt

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 2.1A, 10V 4V @ 250µA 17 nC @ 10 V 30V 554 pF @ 400 V - 32W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
NVMJS1D2N04CLTWG

NVMJS1D2N04CLTWG

MOSFET N-CH 40V 41A/237A 8LFPAK

onsemi

2,990 -
RFQ
NVMJS1D2N04CLTWG

Datenblatt

- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 41A (Ta), 237A (Tc) 4.5V, 10V 1.2mOhm @ 50A, 10V 2V @ 170µA 93 nC @ 10 V ±20V 5600 pF @ 25 V - 3.8W (Ta), 128W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-LFPAK
RD3G08CBLHRBTL

RD3G08CBLHRBTL

NCH 40V 80A, TO-252 (DPAK), POWE

Rohm Semiconductor

2,500 -
RFQ
RD3G08CBLHRBTL

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 6V, 10V 3.2mOhm @ 80A, 10V 4V @ 924µA 42 nC @ 10 V ±20V 2800 pF @ 20 V - 96W (Tc) 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252
STF16N65M2

STF16N65M2

MOSFET N-CH 650V 11A TO220FP

STMicroelectronics

998 -
RFQ
STF16N65M2

Datenblatt

MDmesh™ M2 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 360mOhm @ 5.5A, 10V 4V @ 250µA 19.5 nC @ 10 V ±25V 718 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
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