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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    SIHP12N50E-BE3

    SIHP12N50E-BE3

    N-CHANNEL 500V

    Vishay Siliconix

    		 836 -
    RFQ
    		SIHP12N50E-BE3

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 10.5A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 50 nC @ 10 V ±30V 886 pF @ 100 V - 114W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    DMT61M5SPSW-13

    DMT61M5SPSW-13

    MOSFET BVDSS: 41V~60V POWERDI506

    Diodes Incorporated

    		 2,181 -
    RFQ
    		DMT61M5SPSW-13

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 215A (Tc) 10V 1.5mOhm @ 30A, 10V 4V @ 250µA 130.6 nC @ 10 V ±20V 8306 pF @ 30 V - 2.7W (Ta), 139W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerDI5060-8 (SWP)
    FDPF041N06BL1-F154

    FDPF041N06BL1-F154

    MOSFET N-CH 60V 77A TO220F-3

    onsemi

    		 772 -
    RFQ
    		FDPF041N06BL1-F154

    Datenblatt

         		PowerTrench® TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 60 V 77A (Tc) - 4.1mOhm @ 77A, 10V 4V @ 250µA 69 nC @ 10 V ±20V 5690 pF @ 30 V - 44.1W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220F-3
    NTMYS9D3N06CLTWG

    NTMYS9D3N06CLTWG

    MOSFET N-CH 60V T6 LFPAK4

    onsemi

    		 2,995 -
    RFQ
    		NTMYS9D3N06CLTWG

    Datenblatt

         		- SOT-1023, 4-LFPAK Tape & Reel (TR) Active - - - 14A (Ta), 50A (Tc) - - - - - - - - - - - Surface Mount LFPAK4 (5x6)
    SIR5110DP-T1-RE3

    SIR5110DP-T1-RE3

    N-CHANNEL 100 V (D-S) MOSFET POW

    Vishay Siliconix

    		 11,972 -
    RFQ
    		SIR5110DP-T1-RE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 13.5A (Ta), 47.6A (Tc) 7.5V, 10V 6mOhm @ 35A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 920 pF @ 50 V - 4.8W (Ta), 59.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    SIR402DP-T1-GE3

    SIR402DP-T1-GE3

    MOSFET N-CH 30V 35A PPAK SO-8

    Vishay Siliconix

    		 3,000 -
    RFQ
    		SIR402DP-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 6mOhm @ 20A, 10V 2.2V @ 250µA 42 nC @ 10 V ±20V 1700 pF @ 15 V - 4.2W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    RH6R025BHTB1

    RH6R025BHTB1

    NCH 150V 25A, HSMT8, POWER MOSFE

    Rohm Semiconductor

    		 2,679 -
    RFQ
    		RH6R025BHTB1

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 25A (Tc) 6V, 10V 60mOhm @ 25A, 10V 4V @ 1mA 16.7 nC @ 10 V ±20V 1010 pF @ 75 V - 59W (Tc) 150°C (TJ) - - Surface Mount 8-HSMT (3.2x3)
    SIHA12N50E-E3

    SIHA12N50E-E3

    MOSFET N-CH 500V 10.5A TO220

    Vishay Siliconix

    		 995 -
    RFQ
    		SIHA12N50E-E3

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 10.5A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 50 nC @ 10 V ±30V 886 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
    STL125N10F8AG

    STL125N10F8AG

    AUTOMOTIVE N-CHANNEL 100 V, 4.6

    STMicroelectronics

    		 956 -
    RFQ
    		STL125N10F8AG

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    STL305N4F8AG

    STL305N4F8AG

    N-CHANNEL ENHANCEMENT MODE 40V,

    STMicroelectronics

    		 170 -
    RFQ
    		STL305N4F8AG

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    IPA126N10NM3SXKSA1

    IPA126N10NM3SXKSA1

    MOSFET N-CH 100V 39A TO220

    Infineon Technologies

    		 231 -
    RFQ
    		IPA126N10NM3SXKSA1

    Datenblatt

         		OptiMOS™ 3 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 6V, 10V 12.6mOhm @ 35A, 10V 3.5V @ 45µA 35 nC @ 10 V ±20V 2500 pF @ 50 V - 33W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220 Full Pack
    TPH1400CQ5,LQ

    TPH1400CQ5,LQ

    150V UMOS 10-H SOP ADVANCE

    Toshiba Semiconductor and Storage

    		 4,975 -
    RFQ
    		TPH1400CQ5,LQ

    Datenblatt

         		U-MOSX-H 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 77A (Ta), 32A (Tc) 8V, 10V 14.1mOhm @ 16A, 10V 4.5V @ 600µA 31 nC @ 10 V ±20V 3800 pF @ 75 V - 3W (Ta), 170W (Tc) 175°C - - Surface Mount 8-SOP Advance (5x5.75)
    NTTFS4C50NTAG

    NTTFS4C50NTAG

    MOSFET N-CH 30V 75A 8WDFN

    onsemi

    		 1,292 -
    RFQ

    -

    		 - 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) - 19.4A (Ta) - - - - - - - - - - - Surface Mount 8-WDFN (3.3x3.3)
    STL305N4LF8AG

    STL305N4LF8AG

    POWERFLAT 5X6 WF

    STMicroelectronics

    		 976 -
    RFQ
    		STL305N4LF8AG

    Datenblatt

         		STripFET™ F8 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 1mOhm @ 60A, 10V 2V @ 250µA 70 nC @ 10 V ±16V 5400 pF @ 25 V - 167W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerFlat™ (5x6)
    NTMYS4D6N04CLTWG

    NTMYS4D6N04CLTWG

    MOSFET N-CH 40V 21A/78A LFPAK4

    onsemi

    		 7,124 -
    RFQ
    		NTMYS4D6N04CLTWG

    Datenblatt

         		- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 21A (Ta), 78A (Tc) 4.5V, 10V 4.5mOhm @ 35A, 10V 2V @ 40µA 23 nC @ 10 V ±20V 1300 pF @ 25 V - 3.6W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK4 (5x6)
    NVMJS3D0N06CTWG

    NVMJS3D0N06CTWG

    T6 60V SL LFPAK8 5X6

    onsemi

    		 3,000 -
    RFQ
    		NVMJS3D0N06CTWG

    Datenblatt

         		- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 26.9A (Ta), 139.3A (Tc) 10V 2.9mOhm @ 27A, 10V 4V @ 135µA 34 nC @ 10 V ±20V 2675 pF @ 25 V - 4.2W (Ta), 112.5W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-LFPAK
    TK12P50W,RQ

    TK12P50W,RQ

    PB-F POWER MOSFET TRANSISTOR DPA

    Toshiba Semiconductor and Storage

    		 1,877 -
    RFQ
    		TK12P50W,RQ

    Datenblatt

         		DTMOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 11.5A (Ta) 10V 340mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V - 100W (Tc) 150°C - - Surface Mount DPAK
    IPP65R420CFDXKSA2

    IPP65R420CFDXKSA2

    MOSFET N-CH 650V 8.7A TO220-3

    Infineon Technologies

    		 488 -
    RFQ
    		IPP65R420CFDXKSA2

    Datenblatt

         		CoolMOS™ CFD2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 8.7A (Tc) 10V 420mOhm @ 3.4A, 10V 4.5V @ 300µA 31.5 nC @ 10 V ±20V 870 pF @ 100 V - 83.3W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    TK6Q60W,S1VQ

    TK6Q60W,S1VQ

    MOSFET N-CH 600V 6.2A IPAK

    Toshiba Semiconductor and Storage

    		 183 -
    RFQ
    		TK6Q60W,S1VQ

    Datenblatt

         		DTMOSIV TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Ta) 10V 820mOhm @ 3.1A, 10V 3.7V @ 310µA 12 nC @ 10 V ±30V 390 pF @ 300 V - 60W (Tc) 150°C (TJ) - - Through Hole IPAK
    BUK7Y12-100EX

    BUK7Y12-100EX

    MOSFET N-CH 100V 85A LFPAK56

    Nexperia USA Inc.

    		 3,677 -
    RFQ
    		BUK7Y12-100EX

    Datenblatt

         		TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 85A (Tc) 10V 12mOhm @ 25A, 10V 4V @ 1mA 68 nC @ 10 V ±20V 5067 pF @ 25 V - 238W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56, Power-SO8
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