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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IRFR9120PBF-BE3

    IRFR9120PBF-BE3

    P-CHANNEL 100V

    Vishay Siliconix

    		 3,000 -
    RFQ
    		IRFR9120PBF-BE3

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active P-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 10V 600mOhm @ 3.4A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 390 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
    PJQ5520-AU_R2_002A1

    PJQ5520-AU_R2_002A1

    30V N-CHANNEL (LL) SGT MOSFET

    Panjit International Inc.

    		 3,000 -
    RFQ
    		PJQ5520-AU_R2_002A1

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    STP3NK60ZFP

    STP3NK60ZFP

    MOSFET N-CH 600V 2.4A TO220FP

    STMicroelectronics

    		 1,453 -
    RFQ
    		STP3NK60ZFP

    Datenblatt

         		SuperMESH™ TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 2.4A (Tc) 10V 3.6Ohm @ 1.2A, 10V 4.5V @ 50µA 11.8 nC @ 10 V ±30V 311 pF @ 25 V - 20W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    NTMFS0D9N04XLT1G

    NTMFS0D9N04XLT1G

    40V T10S IN S08FL PACKAGE

    onsemi

    		 798 -
    RFQ
    		NTMFS0D9N04XLT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 278A (Tc) 4.5V, 10V 0.9mOhm @ 35A, 10V 2.2V @ 180µA 70 nC @ 10 V ±20V 5160 pF @ 20 V - 136W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    IRFR320TRPBF-BE3

    IRFR320TRPBF-BE3

    N-CHANNEL 400V

    Vishay Siliconix

    		 1,918 -
    RFQ
    		IRFR320TRPBF-BE3

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 400 V 3.1A (Tc) 10V 1.8Ohm @ 1.9A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
    IRFB3306PBFXKMA1

    IRFB3306PBFXKMA1

    TRENCH 40<-<100V

    Infineon Technologies

    		 988 -
    RFQ
    		IRFB3306PBFXKMA1

    Datenblatt

         		- - Tube Active - - - - - - - - - - - - - - - - -
    STF8NM50N

    STF8NM50N

    MOSFET N-CH 500V 5A TO220FP

    STMicroelectronics

    		 950 -
    RFQ
    		STF8NM50N

    Datenblatt

         		MDmesh™ II TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 790mOhm @ 2.5A, 10V 4V @ 250µA 14 nC @ 10 V ±25V 364 pF @ 50 V - 20W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    IPB80N06S405ATMA2

    IPB80N06S405ATMA2

    MOSFET N-CH 60V 80A TO263-3

    Infineon Technologies

    		 231 -
    RFQ
    		IPB80N06S405ATMA2

    Datenblatt

         		OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 5.7mOhm @ 80A, 10V 4V @ 60µA 81 nC @ 10 V ±20V 6500 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-3-2
    DI200N04PQ

    DI200N04PQ

    MOSFET PWRQFN 5X6 40V 0.0013OHM

    Diotec Semiconductor

    		 5,000 -
    RFQ
    		DI200N04PQ

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 200A (Tc) 10V 1.3mOhm @ 100A, 10V 4V @ 250µA 92 nC @ 10 V ±20V 5768 pF @ 20 V - 180W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount 8-QFN (5x6)
    IPI80N06S407AKSA2

    IPI80N06S407AKSA2

    MOSFET N-CH 60V 80A TO262-3

    Infineon Technologies

    		 675 -
    RFQ
    		IPI80N06S407AKSA2

    Datenblatt

         		OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 7.4mOhm @ 80A, 10V 4V @ 40µA 56 nC @ 10 V ±20V 4500 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO262-3-1
    IPI80N04S403AKSA1

    IPI80N04S403AKSA1

    MOSFET N-CH 40V 80A TO262-3

    Infineon Technologies

    		 498 -
    RFQ
    		IPI80N04S403AKSA1

    Datenblatt

         		OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.7mOhm @ 80A, 10V 4V @ 53µA 66 nC @ 10 V ±20V 5260 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
    SISS5108DN-T1-GE3

    SISS5108DN-T1-GE3

    N-CHANNEL 100-V (D-S) MOSFET POW

    Vishay Siliconix

    		 12,010 -
    RFQ
    		SISS5108DN-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® 1212-8S Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 15.4A (Ta), 55.9A (Tc) 7.5V, 10V 10.5mOhm @ 10A, 10V 4V @ 250µA 23 nC @ 10 V ±20V 1150 pF @ 50 V - 5W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8S
    SIR5112DP-T1-RE3

    SIR5112DP-T1-RE3

    N-CHANNEL 100 V (D-S) MOSFET POW

    Vishay Siliconix

    		 5,851 -
    RFQ
    		SIR5112DP-T1-RE3

    Datenblatt

         		TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 12.6A (Ta), 42.6A (Tc) 7.5V, 10V 14.9mOhm @ 10A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 790 pF @ 50 V - 5W (Ta), 56.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
    IRFRC20PBF-BE3

    IRFRC20PBF-BE3

    N-CHANNEL 600V

    Vishay Siliconix

    		 3,000 -
    RFQ
    		IRFRC20PBF-BE3

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 4.4Ohm @ 1.2A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
    RD3R02BBHTL1

    RD3R02BBHTL1

    NCH 150V 20A, TO-252, POWER MOSF

    Rohm Semiconductor

    		 2,457 -
    RFQ
    		RD3R02BBHTL1

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 20A (Tc) 6V, 10V 81mOhm @ 10A, 10V 4V @ 1mA 12.4 nC @ 10 V ±20V 730 pF @ 75 V - 50W (Tc) 150°C (TJ) - - Surface Mount TO-252
    NTTFS034N15MC

    NTTFS034N15MC

    PTNG 150V 34MOHM POWERCLIP33

    onsemi

    		 11,988 -
    RFQ
    		NTTFS034N15MC

    Datenblatt

         		PowerTrench® 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 6.2A (Ta), 27A (Tc) 8V, 10V 31mOhm @ 13A, 10V 4.5V @ 70µA 12 nC @ 10 V ±20V 905 pF @ 75 V - 1.2W (Ta), 53.6W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-PQFN (3.3x3.3)
    MCAC125N04YHE3-TP

    MCAC125N04YHE3-TP

    MOSFET N-CH 40 125A DFN5060

    Micro Commercial Co

    		 5,000 -
    RFQ
    		MCAC125N04YHE3-TP

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 125A (Tc) 10V 2.6mOhm @ 20A, 10V 4V @ 250µA 42 nC @ 10 V ±20V 3555 pF @ 25 V - 100W (Tj) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN5060
    IPB80P04P4L08ATMA2

    IPB80P04P4L08ATMA2

    MOSFET P-CH 40V 80A TO263-3

    Infineon Technologies

    		 1,986 -
    RFQ
    		IPB80P04P4L08ATMA2

    Datenblatt

         		OptiMOS™ P2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 8.2mOhm @ 80A, 10V 2.2V @ 120µA 92 nC @ 10 V +5V, -16V 5430 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
    IPD65R420CFDATMA2

    IPD65R420CFDATMA2

    MOSFET N-CH 650V 8.7A TO252-3

    Infineon Technologies

    		 2,490 -
    RFQ
    		IPD65R420CFDATMA2

    Datenblatt

         		CoolMOS™ CFD2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 8.7A (Tc) 10V 420mOhm @ 3.4A, 10V 4.5V @ 300µA 31.5 nC @ 10 V ±20V 870 pF @ 100 V - 83.3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3-341
    DMTH41M8SPSQ-13

    DMTH41M8SPSQ-13

    MOSFET N-CH 40V 100A PWRDI5060-8

    Diodes Incorporated

    		 1,215 -
    RFQ
    		DMTH41M8SPSQ-13

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 1.8mOhm @ 30A, 10V 4V @ 250µA 79.5 nC @ 10 V ±20V 6968 pF @ 20 V - 3.03W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerDI5060-8 (Type K)
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