FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
NVTFS5C460NLWFTAG

NVTFS5C460NLWFTAG

MOSFET N-CH 40V 19A/74A 8WDFN

onsemi

1,475 -
RFQ
NVTFS5C460NLWFTAG

Datenblatt

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 19A (Ta), 74A (Tc) 4.5V, 10V 4.8mOhm @ 35A, 10V 2V @ 40µA 11 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-WDFN (3.3x3.3)
IPA052N08NM5SXKSA1

IPA052N08NM5SXKSA1

MOSFET N-CH 80V 64A TO220

Infineon Technologies

360 -
RFQ
IPA052N08NM5SXKSA1

Datenblatt

OptiMOS™ 5 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 80 V 64A (Tc) 6V, 10V 5.2mOhm @ 32A, 10V 3.8V @ 65µA 56 nC @ 10 V ±20V 3800 pF @ 40 V - 38W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220 Full Pack
SISH116DN-T1-GE3

SISH116DN-T1-GE3

MOSFET N-CH 40V 10.5A PPAK

Vishay Siliconix

6,000 -
RFQ
SISH116DN-T1-GE3

Datenblatt

TrenchFET® PowerPAK® 1212-8SH Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 10.5A (Ta) 4.5V, 10V 7.8mOhm @ 16.4A, 10V 2.5V @ 250µA 23 nC @ 4.5 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8SH
DI068P04D1-AQ

DI068P04D1-AQ

MOSFET, DPAK, -40V, -68A, 0, 54W

Diotec Semiconductor

4,590 -
RFQ
DI068P04D1-AQ

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel - - 68A - - - - - - - 54W - - - Surface Mount TO-252 (DPAK)
R6007RND3TL1

R6007RND3TL1

600V 7A TO-252, PRESTOMOS WITH I

Rohm Semiconductor

3,017 -
RFQ
R6007RND3TL1

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 15V 940mOhm @ 3.5A, 15V 7V @ 1mA 17.5 nC @ 15 V ±30V 460 pF @ 100 V - 96W (Tc) 150°C (TJ) - - Surface Mount TO-252
PJD50N04V-AU_L2_002A1

PJD50N04V-AU_L2_002A1

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3,000 -
RFQ
PJD50N04V-AU_L2_002A1

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 16.8A (Ta), 80A (Tc) 7V, 10V 5.9mOhm @ 20A, 10V 3.5V @ 50µA 23 nC @ 10 V ±20V 1287 pF @ 25 V - 3W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252AA
RD3P06BBKHRBTL

RD3P06BBKHRBTL

NCH 100V 59A, TO-252 (DPAK), POW

Rohm Semiconductor

2,945 -
RFQ
RD3P06BBKHRBTL

Datenblatt

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
PSMN4R1-60YLX

PSMN4R1-60YLX

MOSFET N-CH 60V 100A LFPAK56

Nexperia USA Inc.

2,713 -
RFQ
PSMN4R1-60YLX

Datenblatt

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 5V, 10V 4.1mOhm @ 25A, 10V 2.1V @ 1mA 103 nC @ 10 V ±20V 7853 pF @ 25 V - 238W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
R6009KND3TL1

R6009KND3TL1

NCH 600V 9A TO-252, HIGH-SPEED S

Rohm Semiconductor

2,500 -
RFQ
R6009KND3TL1

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 535mOhm @ 2.8A, 10V 5V @ 1mA 16.5 nC @ 10 V ±20V 540 pF @ 25 V - 94W (Tc) 150°C (TJ) - - Surface Mount TO-252
DI5A7N65D1K-AQ

DI5A7N65D1K-AQ

MOSFET, DPAK, 650V, 5.7A, 150C,

Diotec Semiconductor

2,480 -
RFQ
DI5A7N65D1K-AQ

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 5.7A (Tc) 10V 430mOhm @ 4A, 10V 4V @ 250µA 18.4 nC @ 10 V ±30V 722 pF @ 325 V - 36W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA (DPAK)
TK60S06K3L(T6L1,NQ

TK60S06K3L(T6L1,NQ

MOSFET N-CH 60V 60A DPAK

Toshiba Semiconductor and Storage

1,755 -
RFQ
TK60S06K3L(T6L1,NQ

Datenblatt

U-MOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Ta) 6V, 10V 8mOhm @ 30A, 10V 3V @ 1mA 60 nC @ 10 V ±20V 2900 pF @ 10 V - 88W (Tc) 175°C (TJ) - - Surface Mount DPAK+
PSMN1R4-40YSHX

PSMN1R4-40YSHX

NEXTPOWERS3 MOSFETS

Nexperia USA Inc.

1,474 -
RFQ
PSMN1R4-40YSHX

Datenblatt

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.4mOhm @ 25A, 10V 3.6V @ 1mA 96 nC @ 10 V ±20V 7523 pF @ 20 V - 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
SIR5623DP-T1-RE3

SIR5623DP-T1-RE3

P-CHANNEL 60 V (D-S) MOSFET POWE

Vishay Siliconix

10,693 -
RFQ
SIR5623DP-T1-RE3

Datenblatt

- PowerPAK® SO-8 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 10.5A (Ta), 37.1A(Tc) 4.5V, 10V 24mOhm @ 10A, 10V 2.6V @ 250µA 33 nC @ 10 V ±20V 1575 pF @ 30 V - 4.8W (Ta), 59.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
PSMQC074N10NS2_R2_00201

PSMQC074N10NS2_R2_00201

100V/ 7.4M/ EXCELLECT LOW FOM MO

Panjit International Inc.

6,000 -
RFQ

-

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
NVMYS1D7N04CT1G

NVMYS1D7N04CT1G

T6 40V SL AIZU SINGLE NCH LFPAK

onsemi

3,000 -
RFQ
NVMYS1D7N04CT1G

Datenblatt

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 36.6A (Ta), 190A (Tc) 10V 1.7mOhm @ 50A, 10V 4V @ 210µA 50 nC @ 10 V ±20V 3125 pF @ 25 V - 3.9W (Ta), 107.1W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK4 (5x6)
NVMYS1D6N04CLT1G

NVMYS1D6N04CLT1G

T6 40V LL AIZU SINGLE NCH LFPAK

onsemi

2,900 -
RFQ
NVMYS1D6N04CLT1G

Datenblatt

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 35A (Ta), 185A (Tc) 4.5V, 10V 1.6mOhm @ 50A, 10V 3V @ 210µA 71 nC @ 10 V ±20V 4301 pF @ 25 V - 3.8W (Ta), 107.1W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK4 (5x6)
NVD5C460NT4G

NVD5C460NT4G

MOSFET N-CH 40V 18A/70A DPAK

onsemi

2,500 -
RFQ
NVD5C460NT4G

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 18A (Ta), 70A (Tc) 10V 4.9mOhm @ 25A, 10V 4V @ 60µA 26 nC @ 10 V ±20V 1600 pF @ 25 V - 3W (Ta), 47W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK
NVD5C460NLT4G

NVD5C460NLT4G

MOSFET N-CH 40V 18A/73A DPAK

onsemi

2,480 -
RFQ
NVD5C460NLT4G

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 18A (Ta), 73A (Tc) 4.5V, 10V 4.6mOhm @ 25A, 10V 2.2V @ 60µA 36 nC @ 10 V ±20V 2100 pF @ 25 V - 3W (Ta), 47W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK
SIR5108DP-T1-RE3

SIR5108DP-T1-RE3

N-CHANNEL 100 V (D-S) MOSFET POW

Vishay Siliconix

12,000 -
RFQ
SIR5108DP-T1-RE3

Datenblatt

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 15.4A (Ta), 55.9A (Tc) 7.5V, 10V 7.45mOhm @ 10A, 10V 4V @ 250µA 23 nC @ 10 V ±20V 1150 pF @ 50 V - 5.2W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
SIJ4108DP-T1-GE3

SIJ4108DP-T1-GE3

N-CHANNEL 100 V (D-S) MOSFET POW

Vishay Siliconix

11,722 -
RFQ
SIJ4108DP-T1-GE3

Datenblatt

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 15.2A (Ta), 56.7A (Tc) 7.5V, 10V 52mOhm @ 10A, 10V 4V @ 250µA 52 nC @ 10 V ±20V 2440 pF @ 50 V - 5W (Ta), 69.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
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