TomatoElecBestellverfolgung TomatoElecMein Konto
    Beliebte Suche BZX84-B36-QR SD103AW-7-F DFLU1200-7 AP2210K-ADJTRG1 AP3012KTR-E1 DDZ7V5CS-7 RS1MWF-7 BAS116-7-F AP7345D-1833RH4-7 FCX493TA
    TomatoElec

    Verfügbar 24/7 unter

    0755-82798135
    TomatoElec TomatoElec
    Alle Kategorien
    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

    Alles zurücksetzen
    Alle anwenden
    Ergebnis

    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    XP50AN1K5H

    XP50AN1K5H

    MOSFET N-CH 500V 5A TO252

    YAGEO XSEMI

    		 998 -
    RFQ
    		XP50AN1K5H

    Datenblatt

         		XP50AN1K5 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.5Ohm @ 2.5A, 10V 4V @ 250µA 24.6 nC @ 10 V ±30V 800 pF @ 100 V - 2W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
    TJ40S04M3L(T6L1,NQ

    TJ40S04M3L(T6L1,NQ

    MOSFET P-CH 40V 40A DPAK

    Toshiba Semiconductor and Storage

    		 1,754 -
    RFQ
    		TJ40S04M3L(T6L1,NQ

    Datenblatt

         		U-MOSVI TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 40A (Ta) 6V, 10V 9.1mOhm @ 20A, 10V 3V @ 1mA 83 nC @ 10 V +10V, -20V 4140 pF @ 10 V - 68W (Tc) 175°C (TJ) - - Surface Mount DPAK+
    SISS5110DN-T1-GE3

    SISS5110DN-T1-GE3

    N-CHANNEL 100 V (D-S) MOSFET POW

    Vishay Siliconix

    		 12,000 -
    RFQ
    		SISS5110DN-T1-GE3

    Datenblatt

         		TrenchFET® PowerPAK® 1212-8S Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 13.4A (Ta), 46.4A (Tc) 7.5V, 10V 8.9mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V ±25V 920 pF @ 50 V - 4.8W (Ta), 56.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8S
    TJ30S06M3L(T6L1,NQ

    TJ30S06M3L(T6L1,NQ

    MOSFET P-CH 60V 30A DPAK

    Toshiba Semiconductor and Storage

    		 4,000 -
    RFQ
    		TJ30S06M3L(T6L1,NQ

    Datenblatt

         		U-MOSVI TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 30A (Ta) 6V, 10V 21.8mOhm @ 15A, 10V 3V @ 1mA 80 nC @ 10 V +10V, -20V 3950 pF @ 10 V - 68W (Tc) 175°C (TJ) - - Surface Mount DPAK+
    NVMFS5C673NLWFAFT3G

    NVMFS5C673NLWFAFT3G

    MOSFET N-CHANNEL 60V 50A 5DFN

    onsemi

    		 3,975 -
    RFQ
    		NVMFS5C673NLWFAFT3G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 9.2mOhm @ 25A, 10V 2V @ 35µA 9.5 nC @ 10 V ±20V 880 pF @ 25 V - 46W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
    PJQ5544V-AU_R2_002A1

    PJQ5544V-AU_R2_002A1

    40V N-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 2,990 -
    RFQ
    		PJQ5544V-AU_R2_002A1

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 22.7A (Ta), 120A (Tc) 7V, 10V 3.6mOhm @ 20A, 10V 3.5V @ 50µA 34 nC @ 10 V ±20V 2544 pF @ 25 V - 3.3W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN5060-8
    IPD50R399CPATMA1

    IPD50R399CPATMA1

    LOW POWER_LEGACY

    Infineon Technologies

    		 2,500 -
    RFQ
    		IPD50R399CPATMA1

    Datenblatt

         		CoolMOS™ CP TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 9A (Tc) 10V 399mOhm @ 4.9A, 10V 3.5V @ 330µA 23 nC @ 10 V ±20V 890 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3-313
    NTMFS6H824NLT1G

    NTMFS6H824NLT1G

    T8 80V LL SO8FL

    onsemi

    		 1,480 -
    RFQ
    		NTMFS6H824NLT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 20A (Ta), 110A (Tc) 4.5V, 10V 4mOhm @ 20A, 10V 2V @ 140µA 52 nC @ 10 V ±20V 2900 pF @ 40 V - 3.8W (Ta), 116W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    TSM060NB06CZ C0G

    TSM060NB06CZ C0G

    60V, 111A, SINGLE N-CHANNEL POWE

    Taiwan Semiconductor Corporation

    		 1,000 -
    RFQ
    		TSM060NB06CZ C0G

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 13A (Ta), 111A (Tc) 7V, 10V 6mOhm @ 13A, 10V 4V @ 250µA 103 nC @ 10 V ±20V 6842 pF @ 30 V - 2W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
    STF11N60M2-EP

    STF11N60M2-EP

    MOSFET N-CH 600V 7.5A TO220FP

    STMicroelectronics

    		 978 -
    RFQ
    		STF11N60M2-EP

    Datenblatt

         		MDmesh™ M2-EP TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 7.5A (Tc) 10V 595mOhm @ 3.75A, 10V 4.75V @ 250µA 12.4 nC @ 10 V ±25V 390 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    TSM038N04LCP ROG

    TSM038N04LCP ROG

    MOSFET N-CHANNEL 40V 135A TO252

    Taiwan Semiconductor Corporation

    		 460 -
    RFQ
    		TSM038N04LCP ROG

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 135A (Tc) 4.5V, 10V 3.8mOhm @ 19A, 10V 2.5V @ 250µA 104 nC @ 10 V ±20V 5509 pF @ 20 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    NVTFS5C658NLTAG

    NVTFS5C658NLTAG

    MOSFET N-CH 60V 109A 8WDFN

    onsemi

    		 225 -
    RFQ
    		NVTFS5C658NLTAG

    Datenblatt

         		- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 109A (Tc) 4.5V, 10V 5mOhm @ 50A, 10V 2.2V @ 250µA 12 nC @ 4.5 V ±20V 1935 pF @ 25 V - 114W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-WDFN (3.3x3.3)
    PJD80N06SA-AU_L2_006A1

    PJD80N06SA-AU_L2_006A1

    60V N-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 3,000 -
    RFQ
    		PJD80N06SA-AU_L2_006A1

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    PJD65N10SA-AU_L2_006A1

    PJD65N10SA-AU_L2_006A1

    100V N-CHANNEL ENHANCEMENT MODE

    Panjit International Inc.

    		 2,990 -
    RFQ
    		PJD65N10SA-AU_L2_006A1

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    PJQ5562A-AU_R2_002A1

    PJQ5562A-AU_R2_002A1

    60V N-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 1,990 -
    RFQ
    		PJQ5562A-AU_R2_002A1

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    ZXMN3A04KTC

    ZXMN3A04KTC

    MOSFET N-CH 30V 18.4A DPAK

    Diodes Incorporated

    		 2,490 -
    RFQ
    		ZXMN3A04KTC

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta) 4.5V, 10V 20mOhm @ 12A, 10V 1V @ 250mA 36.8 nC @ 10 V ±20V 1890 pF @ 15 V - 2.15W (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount TO-252-3
    DI070P04PQ-AQ

    DI070P04PQ-AQ

    MOSFET, POWERQFN 5X6, -40V, -70A

    Diotec Semiconductor

    		 3,230 -
    RFQ
    		DI070P04PQ-AQ

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 70A (Tc) 4.5V, 10V 6.5mOhm @ 20A, 10V 2.5V @ 250µA 125 nC @ 10 V ±20V 7560 pF @ 20 V - 46W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount 8-QFN (5x6)
    DI100N04D1-AQ

    DI100N04D1-AQ

    MOSFET, DPAK, 40V, 100A, 0, 69W

    Diotec Semiconductor

    		 2,494 -
    RFQ
    		DI100N04D1-AQ

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel - - 100A - - - - - - - 69W - - - Surface Mount TO-252 (DPAK)
    BUK7Y8R7-60EX

    BUK7Y8R7-60EX

    MOSFET N-CH 60V 87A LFPAK56

    Nexperia USA Inc.

    		 1,341 -
    RFQ
    		BUK7Y8R7-60EX

    Datenblatt

         		TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 87A (Tc) 10V 8.7mOhm @ 20A, 10V 4V @ 1mA 46 nC @ 10 V ±20V 3159 pF @ 25 V - 147W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56, Power-SO8
    TPH3R008QM,LQ

    TPH3R008QM,LQ

    80V UMOS9-H SOP-ADVANCE(N) 3MOHM

    Toshiba Semiconductor and Storage

    		 10,863 -
    RFQ

    -

    		 U-MOSX-H 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 6V, 10V 3mOhm @ 50A, 10V 3.5V @ 900µA 71 nC @ 10 V ±20V 7200 pF @ 40 V - 3W (Ta), 180W (Tc) 175°C - - Surface Mount 8-SOP Advance (5x5.75)
    Total 36322 Record«Prev1... 267268269270271272273274...1817Next»
    TomatoElec

    Suche

     TomatoElec

    Produkte

     TomatoElec

    Telefon

     TomatoElec

    Benutzer
    TomatoElec
    [email protected]
    0755-82798135