FETs, MOSFETs

Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

Alles zurücksetzen
Alle anwenden
Ergebnis

FETs und MOSFETs

TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
PJQ5968A-AU_R2_002A1

PJQ5968A-AU_R2_002A1

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3,000 -
RFQ
PJQ5968A-AU_R2_002A1

Datenblatt

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
DMTH6005LPSQ-13

DMTH6005LPSQ-13

MOSFET N-CH 60V 100A PWRDI5060

Diodes Incorporated

2,468 -
RFQ
DMTH6005LPSQ-13

Datenblatt

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 20.6A (Ta), 100A (Tc) 4.5V, 10V 5.5mOhm @ 50A, 10V 3V @ 250µA 47.1 nC @ 10 V ±20V 2962 pF @ 30 V - 3.2W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerDI5060-8
NVTFWS010N10MCLTAG

NVTFWS010N10MCLTAG

MOSFET N-CH 100V 11.7A 8WDFN

onsemi

1,500 -
RFQ
NVTFWS010N10MCLTAG

Datenblatt

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 11.7A (Ta), 57.8A (Tc) 4.5V, 10V 10.6mOhm @ 15A, 10V 3V @ 85µA 30 nC @ 10 V ±20V 2150 pF @ 50 V - 3.2W (Ta), 77.8W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-WDFN (3.3x3.3)
RD3P02BATTL1

RD3P02BATTL1

PCH -100V -20A POWER MOSFET: RD3

Rohm Semiconductor

1,120 -
RFQ
RD3P02BATTL1

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 100 V 20A (Tc) 6V, 10V 116mOhm @ 10A, 10V 4V @ 1mA 39 nC @ 10 V ±20V 1480 pF @ 50 V - 56W (Tc) 150°C (TJ) - - Surface Mount TO-252
DI150N04PQ

DI150N04PQ

MOSFET PWRQFN 5X6 40V 0.0014OHM

Diotec Semiconductor

5,000 -
RFQ
DI150N04PQ

Datenblatt

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 150A (Tc) 10V 1.45mOhm @ 75A, 10V 4V @ 250µA 61 nC @ 10 V ±20V 3950 pF @ 20 V - 125W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount 8-QFN (5x6)
IRFR9110TRLPBF

IRFR9110TRLPBF

MOSFET P-CH 100V 3.1A DPAK

Vishay Siliconix

3,000 -
RFQ
IRFR9110TRLPBF

Datenblatt

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 100 V 3.1A (Tc) 10V 1.2Ohm @ 1.9A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
NVMYS006N08LHTWG

NVMYS006N08LHTWG

T8 80V LL LFPAK

onsemi

2,970 -
RFQ
NVMYS006N08LHTWG

Datenblatt

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 16A (Ta), 77A (Tc) 4.5V, 10V 6.2mOhm @ 15A, 10V 2V @ 95µA 34 nC @ 10 V ±20V 1950 pF @ 40 V - 3.7W (Ta), 89W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK4 (5x6)
PJQ5544-AU_R2_002A1

PJQ5544-AU_R2_002A1

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2,240 -
RFQ
PJQ5544-AU_R2_002A1

Datenblatt

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 24A (Ta), 130A (Tc) 4.5V, 10V 3.3mOhm @ 20A, 10V 2.3V @ 50µA 41 nC @ 10 V ±20V 2851 pF @ 25 V - 3.3W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN5060-8
IAUCN08S7N024ATMA1

IAUCN08S7N024ATMA1

MOSFET_(75V 120V(

Infineon Technologies

1,990 -
RFQ
IAUCN08S7N024ATMA1

Datenblatt

OptiMOS™ 7 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 165A 10V - - 16 nC @ 10 V - - - - -55°C ~ 175°C Automotive AEC-Q101 Surface Mount PG-TDSON-8-34
NTMFS0D9N04XMT1G

NTMFS0D9N04XMT1G

40V T10M IN S08FL PACKAGE

onsemi

1,455 -
RFQ
NTMFS0D9N04XMT1G

Datenblatt

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 48A (Ta), 273A (Tc) 10V 0.9mOhm @ 30A, 10V 3.5V @ 150µA 61 nC @ 10 V ±20V 3918 pF @ 20 V - 121W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
IAUAN04S7N007AUMA1

IAUAN04S7N007AUMA1

IAUAN04S7N007AUMA1

Infineon Technologies

448 -
RFQ
IAUAN04S7N007AUMA1

Datenblatt

OptiMOS™ 7 5-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Ta), 330A (Tj) 7V, 10V 0.72mOhm @ 100A, 10V 3V @ 73µA 94 nC @ 10 V ±20V 6460 pF @ 20 V - 149W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HSOF-5-2
PSMQC094N10NS2_R2_00201

PSMQC094N10NS2_R2_00201

100V/ 9.4M/ EXCELLECT LOW FOM MO

Panjit International Inc.

5,980 -
RFQ

-

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
CDMSJ2204.7-650 SL

CDMSJ2204.7-650 SL

SUPER JUNCTION MOSFETS

Central Semiconductor Corp

500 -
RFQ
CDMSJ2204.7-650 SL

Datenblatt

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 4.7A (Tc) 10V 990mOhm @ 2A, 10V 4V @ 250µA 9.7 nC @ 10 V 30V 306 pF @ 400 V - 22.5W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
SIHU4N80AE-GE3

SIHU4N80AE-GE3

MOSFET N-CH 800V 4.3A IPAK

Vishay Siliconix

2,994 -
RFQ
SIHU4N80AE-GE3

Datenblatt

E TO-251-3 Long Leads, IPAK, TO-251AB Tube Active N-Channel MOSFET (Metal Oxide) 800 V 4.3A (Tc) 10V 1.27Ohm @ 2A, 10V 4V @ 250µA 32 nC @ 10 V ±30V 622 pF @ 100 V - 69W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK (TO-251)
STD3NK80Z-1

STD3NK80Z-1

MOSFET N-CH 800V 2.5A IPAK

STMicroelectronics

2,395 -
RFQ
STD3NK80Z-1

Datenblatt

SuperMESH™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 800 V 2.5A (Tc) 10V 4.5Ohm @ 1.25A, 10V 4.5V @ 50µA 19 nC @ 10 V ±30V 485 pF @ 25 V - 70W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-251 (IPAK)
IPD65R660CFDATMA2

IPD65R660CFDATMA2

MOSFET N-CH 700V 6A TO252-3-313

Infineon Technologies

1,607 -
RFQ
IPD65R660CFDATMA2

Datenblatt

CoolMOS™ CFD2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 700 V 6A (Tc) 10V 660mOhm @ 2.1A, 10V 4.5V @ 200µA 22 nC @ 10 V ±20V 615 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3-313
XP6NA3R5IT

XP6NA3R5IT

MOSFET N-CH 60V 72A TO220CFM

YAGEO XSEMI

1,000 -
RFQ
XP6NA3R5IT

Datenblatt

XP6NA3R5IT TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 60 V 72A (Tc) 10V 3.5mOhm @ 30A, 10V 4V @ 250µA 125 nC @ 10 V ±20V 5440 pF @ 50 V - 1.92W (Ta), 32.9W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220CFM
PSMQC060N06LS1-AU_R2_006A1

PSMQC060N06LS1-AU_R2_006A1

60V/ 6M / AECQ101 QUALIFIED / SO

Panjit International Inc.

5,455 -
RFQ
PSMQC060N06LS1-AU_R2_006A1

Datenblatt

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 68A (Tc) 4.5V, 10V 6mOhm @ 20A, 10V 3V @ 250µA 37 nC @ 10 V ±20V 2057 pF @ 30 V - 50W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount DFN5060-8
AONS66919

AONS66919

N

Alpha & Omega Semiconductor Inc.

2,770 -
RFQ
AONS66919

Datenblatt

AlphaSGT™ 8-PowerSMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 23A (Ta), 85A (Tc) 4.5V, 10V 5.9mOhm @ 20A, 10V 2.6V @ 250µA 66 nC @ 10 V ±20V 3420 pF @ 50 V - 6.2W (Ta), 113W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (5x6)
IPD85P04P4L06ATMA2

IPD85P04P4L06ATMA2

MOSFET P-CH 40V 85A TO252-3

Infineon Technologies

3,644 -
RFQ
IPD85P04P4L06ATMA2

Datenblatt

OptiMOS™ P2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 85A (Tc) 4.5V, 10V 6.4mOhm @ 85A, 10V 2.2V @ 150µA 104 nC @ 10 V +5V, -16V 6580 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-313
Total 36322 Record«Prev1... 266267268269270271272273...1817Next»
TomatoElec

Suche

TomatoElec

Produkte

TomatoElec

Telefon

TomatoElec

Benutzer