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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IPA126N10NM3SXKSA1

    IPA126N10NM3SXKSA1

    MOSFET N-CH 100V 39A TO220

    Infineon Technologies

    		 231 -
    RFQ
    		IPA126N10NM3SXKSA1

    Datenblatt

         		OptiMOS™ 3 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 6V, 10V 12.6mOhm @ 35A, 10V 3.5V @ 45µA 35 nC @ 10 V ±20V 2500 pF @ 50 V - 33W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220 Full Pack
    TPH1400CQ5,LQ

    TPH1400CQ5,LQ

    150V UMOS 10-H SOP ADVANCE

    Toshiba Semiconductor and Storage

    		 4,975 -
    RFQ
    		TPH1400CQ5,LQ

    Datenblatt

         		U-MOSX-H 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 77A (Ta), 32A (Tc) 8V, 10V 14.1mOhm @ 16A, 10V 4.5V @ 600µA 31 nC @ 10 V ±20V 3800 pF @ 75 V - 3W (Ta), 170W (Tc) 175°C - - Surface Mount 8-SOP Advance (5x5.75)
    NTTFS4C50NTAG

    NTTFS4C50NTAG

    MOSFET N-CH 30V 75A 8WDFN

    onsemi

    		 1,292 -
    RFQ

    -

    		 - 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) - 19.4A (Ta) - - - - - - - - - - - Surface Mount 8-WDFN (3.3x3.3)
    STL305N4LF8AG

    STL305N4LF8AG

    POWERFLAT 5X6 WF

    STMicroelectronics

    		 976 -
    RFQ
    		STL305N4LF8AG

    Datenblatt

         		STripFET™ F8 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 1mOhm @ 60A, 10V 2V @ 250µA 70 nC @ 10 V ±16V 5400 pF @ 25 V - 167W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerFlat™ (5x6)
    NTMYS4D6N04CLTWG

    NTMYS4D6N04CLTWG

    MOSFET N-CH 40V 21A/78A LFPAK4

    onsemi

    		 7,124 -
    RFQ
    		NTMYS4D6N04CLTWG

    Datenblatt

         		- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 21A (Ta), 78A (Tc) 4.5V, 10V 4.5mOhm @ 35A, 10V 2V @ 40µA 23 nC @ 10 V ±20V 1300 pF @ 25 V - 3.6W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK4 (5x6)
    NVMJS3D0N06CTWG

    NVMJS3D0N06CTWG

    T6 60V SL LFPAK8 5X6

    onsemi

    		 3,000 -
    RFQ
    		NVMJS3D0N06CTWG

    Datenblatt

         		- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 26.9A (Ta), 139.3A (Tc) 10V 2.9mOhm @ 27A, 10V 4V @ 135µA 34 nC @ 10 V ±20V 2675 pF @ 25 V - 4.2W (Ta), 112.5W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-LFPAK
    TK12P50W,RQ

    TK12P50W,RQ

    PB-F POWER MOSFET TRANSISTOR DPA

    Toshiba Semiconductor and Storage

    		 1,877 -
    RFQ
    		TK12P50W,RQ

    Datenblatt

         		DTMOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 11.5A (Ta) 10V 340mOhm @ 5.8A, 10V 3.7V @ 600µA 25 nC @ 10 V ±30V 890 pF @ 300 V - 100W (Tc) 150°C - - Surface Mount DPAK
    IPP65R420CFDXKSA2

    IPP65R420CFDXKSA2

    MOSFET N-CH 650V 8.7A TO220-3

    Infineon Technologies

    		 488 -
    RFQ
    		IPP65R420CFDXKSA2

    Datenblatt

         		CoolMOS™ CFD2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 8.7A (Tc) 10V 420mOhm @ 3.4A, 10V 4.5V @ 300µA 31.5 nC @ 10 V ±20V 870 pF @ 100 V - 83.3W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
    TK6Q60W,S1VQ

    TK6Q60W,S1VQ

    MOSFET N-CH 600V 6.2A IPAK

    Toshiba Semiconductor and Storage

    		 183 -
    RFQ
    		TK6Q60W,S1VQ

    Datenblatt

         		DTMOSIV TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Ta) 10V 820mOhm @ 3.1A, 10V 3.7V @ 310µA 12 nC @ 10 V ±30V 390 pF @ 300 V - 60W (Tc) 150°C (TJ) - - Through Hole IPAK
    BUK7Y12-100EX

    BUK7Y12-100EX

    MOSFET N-CH 100V 85A LFPAK56

    Nexperia USA Inc.

    		 3,677 -
    RFQ
    		BUK7Y12-100EX

    Datenblatt

         		TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 85A (Tc) 10V 12mOhm @ 25A, 10V 4V @ 1mA 68 nC @ 10 V ±20V 5067 pF @ 25 V - 238W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56, Power-SO8
    NTMFS3D0N08XT1G

    NTMFS3D0N08XT1G

    T10 80V STD NCH MOSFET SO8FL

    onsemi

    		 2,790 -
    RFQ
    		NTMFS3D0N08XT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 154A (Tc) 6V, 10V 2.6mOhm @ 37A, 10V 3.6V @ 184µA 45 nC @ 10 V ±20V 3200 pF @ 40 V - 133W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    TK6P60W,RVQ

    TK6P60W,RVQ

    MOSFET N CH 600V 6.2A DPAK

    Toshiba Semiconductor and Storage

    		 645 -
    RFQ
    		TK6P60W,RVQ

    Datenblatt

         		DTMOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Ta) 10V 820mOhm @ 3.1A, 10V 3.7V @ 310µA 12 nC @ 10 V ±30V 390 pF @ 300 V - 60W (Tc) 150°C (TJ) - - Surface Mount DPAK
    TK11P65W,RQ

    TK11P65W,RQ

    MOSFET N-CH 650V 11.1A DPAK

    Toshiba Semiconductor and Storage

    		 462 -
    RFQ
    		TK11P65W,RQ

    Datenblatt

         		DTMOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 11.1A (Ta) 10V 440mOhm @ 5.5A, 10V 3.5V @ 450µA 25 nC @ 10 V ±30V 890 pF @ 300 V - 100W (Tc) 150°C (TJ) - - Surface Mount DPAK
    IRFR9024PBF-BE3

    IRFR9024PBF-BE3

    P-CHANNEL 60V

    Vishay Siliconix

    		 3,000 -
    RFQ
    		IRFR9024PBF-BE3

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 8.8A (Tc) 10V 280mOhm @ 5.3A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 570 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
    NVMFS5C423NLWFAFT1G

    NVMFS5C423NLWFAFT1G

    MOSFET N-CH 40V 31A/150A 5DFN

    onsemi

    		 2,890 -
    RFQ
    		NVMFS5C423NLWFAFT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 31A (Ta), 150A (Tc) 4.5V, 10V 2mOhm @ 50A, 10V 2V @ 250µA 50 nC @ 10 V ±20V 3100 pF @ 20 V - 3.7W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 5-DFN (5x6) (8-SOFL)
    NVTFWS002N04CTAG

    NVTFWS002N04CTAG

    MOSFET N-CH 40V 27A/136A 8WDFN

    onsemi

    		 1,290 -
    RFQ
    		NVTFWS002N04CTAG

    Datenblatt

         		- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 27A (Ta), 136A (Tc) 10V 2.4mOhm @ 50A, 10V 3.5V @ 90µA 34 nC @ 10 V ±20V 2250 pF @ 25 V - 3.2W (Ta), 85W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-WDFN (3.3x3.3)
    BUK7Y3R1-80MX

    BUK7Y3R1-80MX

    BUK7Y3R1-80M/SOT669/LFPAK

    Nexperia USA Inc.

    		 268 -
    RFQ
    		BUK7Y3R1-80MX

    Datenblatt

         		- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 160A (Tc) 10V 3.1mOhm @ 25A, 10V 4V @ 1mA 108 nC @ 10 V ±20V 6986 pF @ 40 V - 300W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56, Power-SO8
    TSM089N08LCR RLG

    TSM089N08LCR RLG

    MOSFET N-CH 80V 67A 8PDFN

    Taiwan Semiconductor Corporation

    		 8,736 -
    RFQ
    		TSM089N08LCR RLG

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 67A (Tc) 4.5V, 10V 8.9mOhm @ 12A, 10V 2.5V @ 250µA 90 nC @ 10 V ±20V 6119 pF @ 40 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PDFN (5x6)
    DMTH10H4M5LPSW

    DMTH10H4M5LPSW

    MOSFET BVDSS: 61V~100V POWERDI50

    Diodes Incorporated

    		 2,411 -
    RFQ
    		DMTH10H4M5LPSW

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 20A (Ta), 107A (Tc) 4.5V, 10V 4.9mOhm @ 30A, 10V 2.5V @ 250µA 80 nC @ 10 V ±20V 4843 pF @ 50 V - 4.7W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount, Wettable Flank PowerDI5060-8 (Type UX)
    PJD75P04E-AU_L2_006A1

    PJD75P04E-AU_L2_006A1

    40V P-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 3,000 -
    RFQ
    		PJD75P04E-AU_L2_006A1

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 13.3A (Ta), 67A (Tc) 4.5V, 10V 9.4mOhm @ 20A, 10V 2.5V @ 250µA 59 nC @ 10 V ±25V 3477 pF @ 25 V - 3W (Ta), 75W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252AA
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