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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    NVMJS1D2N04CLTWG

    NVMJS1D2N04CLTWG

    MOSFET N-CH 40V 41A/237A 8LFPAK

    onsemi

    		 2,990 -
    RFQ
    		NVMJS1D2N04CLTWG

    Datenblatt

         		- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 41A (Ta), 237A (Tc) 4.5V, 10V 1.2mOhm @ 50A, 10V 2V @ 170µA 93 nC @ 10 V ±20V 5600 pF @ 25 V - 3.8W (Ta), 128W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-LFPAK
    RD3G08CBLHRBTL

    RD3G08CBLHRBTL

    NCH 40V 80A, TO-252 (DPAK), POWE

    Rohm Semiconductor

    		 2,500 -
    RFQ
    		RD3G08CBLHRBTL

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 6V, 10V 3.2mOhm @ 80A, 10V 4V @ 924µA 42 nC @ 10 V ±20V 2800 pF @ 20 V - 96W (Tc) 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252
    STF16N65M2

    STF16N65M2

    MOSFET N-CH 650V 11A TO220FP

    STMicroelectronics

    		 998 -
    RFQ
    		STF16N65M2

    Datenblatt

         		MDmesh™ M2 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 360mOhm @ 5.5A, 10V 4V @ 250µA 19.5 nC @ 10 V ±25V 718 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    STD16N60M6

    STD16N60M6

    MOSFET N-CH 600V 12A DPAK

    STMicroelectronics

    		 2,347 -
    RFQ
    		STD16N60M6

    Datenblatt

         		MDmesh™ M6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 320mOhm @ 6A, 10V 4.75V @ 250µA 16.7 nC @ 10 V ±25V 575 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    NVMFS5C670NWFT1G

    NVMFS5C670NWFT1G

    MOSFET N-CH 60V 17A/71A 5DFN

    onsemi

    		 5,135 -
    RFQ
    		NVMFS5C670NWFT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Ta), 71A (Tc) 10V 7mOhm @ 11A, 10V 4V @ 53µA 14.4 nC @ 10 V ±20V 1035 pF @ 30 V - 3.6W (Ta), 61W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 5-DFNW (4.9x5.9) (8-SOFL-WF)
    DMTH84M1SPSQ-13

    DMTH84M1SPSQ-13

    MOSFET BVDSS: 61V~100V POWERDI50

    Diodes Incorporated

    		 2,500 -
    RFQ
    		DMTH84M1SPSQ-13

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 6V, 10V 4mOhm @ 20A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 4209 pF @ 40 V - 1.6W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerDI5060-8
    RD3G08CBKHRBTL

    RD3G08CBKHRBTL

    NCH 40V 80A, TO-252 (DPAK), POWE

    Rohm Semiconductor

    		 2,500 -
    RFQ
    		RD3G08CBKHRBTL

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 4.5V, 10V 3.1mOhm @ 80A, 10V 2.5V @ 924µA 41 nC @ 10 V ±20V 2570 pF @ 20 V - 96W (Tc) 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252
    DMTH10H4M5LPSWQ-13

    DMTH10H4M5LPSWQ-13

    MOSFET BVDSS: 61V~100V POWERDI50

    Diodes Incorporated

    		 2,170 -
    RFQ
    		DMTH10H4M5LPSWQ-13

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 20A (Ta), 107A (Tc) 4.5V, 10V 4.9mOhm @ 30A, 10V 2.5V @ 250µA 80 nC @ 10 V ±20V 4843 pF @ 50 V - 4.7W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PowerDI5060-8 (Type UX)
    SIHP4N80E-BE3

    SIHP4N80E-BE3

    N-CHANNEL 600V

    Vishay Siliconix

    		 990 -
    RFQ
    		SIHP4N80E-BE3

    Datenblatt

         		E TO-220-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 4.3A (Tc) 10V 1.27Ohm @ 2A, 10V 4V @ 250µA 32 nC @ 10 V ±30V 622 pF @ 100 V - 69W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    SIHF640S-GE3

    SIHF640S-GE3

    MOSFET N-CH 200V 18A D2PAK

    Vishay Siliconix

    		 940 -
    RFQ
    		SIHF640S-GE3

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    IRFI9610GPBF

    IRFI9610GPBF

    MOSFET P-CH 200V 2A TO220-3

    Vishay Siliconix

    		 918 -
    RFQ
    		IRFI9610GPBF

    Datenblatt

         		- TO-220-3 Full Pack, Isolated Tab Tube Active P-Channel MOSFET (Metal Oxide) 200 V 2A (Tc) 10V 3Ohm @ 1.2A, 10V 4V @ 250µA 13 nC @ 10 V ±20V 180 pF @ 25 V - 27W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    IPB80N06S2L11ATMA2

    IPB80N06S2L11ATMA2

    MOSFET N-CH 55V 80A TO263-3

    Infineon Technologies

    		 863 -
    RFQ
    		IPB80N06S2L11ATMA2

    Datenblatt

         		OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 10.7mOhm @ 40A, 10V 2V @ 93µA 80 nC @ 10 V ±20V 2075 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
    DI080N06PQ-AQ

    DI080N06PQ-AQ

    MOSFET POWERQFN 5X6 N 65V 105A 0

    Diotec Semiconductor

    		 4,820 -
    RFQ
    		DI080N06PQ-AQ

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 65 V 80A (Tc) 4.5V, 10V 4mOhm @ 30A, 10V 3V @ 250µA 56 nC @ 10 V ±20V 4128 pF @ 30 V - 80W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount 8-QFN (5x6)
    PJD55P03E-AU_L2_006A1

    PJD55P03E-AU_L2_006A1

    30V P-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 3,000 -
    RFQ
    		PJD55P03E-AU_L2_006A1

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 12.4A (Ta), 48A (Tc) 4.5V, 10V 12.1mOhm @ 20A, 10V 2.5V @ 250µA 34 nC @ 10 V ±25V 1610 pF @ 25 V - 3W (Ta), 44W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252AA
    IPD65R420CFDAATMA1

    IPD65R420CFDAATMA1

    MOSFET N-CH 650V 8.7A TO252-3

    Infineon Technologies

    		 2,178 -
    RFQ
    		IPD65R420CFDAATMA1

    Datenblatt

         		CoolMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 8.7A (Tc) 10V 420mOhm @ 3.4A, 10V 4.5V @ 345µA 32 nC @ 10 V ±20V 870 pF @ 100 V - 83.3W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO252-3
    R6010YND3TL1

    R6010YND3TL1

    600V 10A TO-252, HIGH-SPEED SWIT

    Rohm Semiconductor

    		 2,500 -
    RFQ
    		R6010YND3TL1

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V, 12V 390mOhm @ 4.2A, 12V 6V @ 1.2mA 15 nC @ 10 V ±30V 600 pF @ 100 V - 92W (Tc) 150°C (TJ) - - Surface Mount TO-252
    IPA040N06NXKSA1

    IPA040N06NXKSA1

    MOSFET N-CH 60V 69A TO220-FP

    Infineon Technologies

    		 420 -
    RFQ
    		IPA040N06NXKSA1

    Datenblatt

         		OptiMOS™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 60 V 69A (Tc) 6V, 10V 4mOhm @ 69A, 10V 3.3V @ 50µA 44 nC @ 10 V ±20V 3375 pF @ 30 V - 36W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-FP
    IPD033N06NATMA1

    IPD033N06NATMA1

    MOSFET N-CH 60V 90A TO252-3

    Infineon Technologies

    		 2,063 -
    RFQ
    		IPD033N06NATMA1

    Datenblatt

         		OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 6V, 10V 3.3mOhm @ 90A, 10V 3.3V @ 50µA 44 nC @ 10 V ±20V 3400 pF @ 30 V - 107W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3
    NTMYS3D5N04CTWG

    NTMYS3D5N04CTWG

    MOSFET N-CH 40V 24A/102A LFPAK4

    onsemi

    		 3,000 -
    RFQ
    		NTMYS3D5N04CTWG

    Datenblatt

         		- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 24A (Ta), 102A (Tc) 10V 3.3mOhm @ 50A, 10V 3.5V @ 60µA 23 nC @ 10 V ±20V 1600 pF @ 25 V - 3.6W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK4 (5x6)
    NTMYS2D9N04CLTWG

    NTMYS2D9N04CLTWG

    MOSFET N-CH 40V 27A/110A 4LFPAK

    onsemi

    		 2,306 -
    RFQ
    		NTMYS2D9N04CLTWG

    Datenblatt

         		- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 27A (Ta), 110A (Tc) 4.5V, 10V 2.8mOhm @ 40A, 10V 2V @ 11µA 35 nC @ 10 V ±20V 2100 pF @ 20 V - 3.7W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK4 (5x6)
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