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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IQE046N08LM5ATMA1

    IQE046N08LM5ATMA1

    TRENCH 40<-<100V

    Infineon Technologies

    		 4,100 -
    RFQ
    		IQE046N08LM5ATMA1

    Datenblatt

         		OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 15.6A (Ta), 99A (Tc) 4.5V, 10V 4.6mOhm @ 20A, 10V 2.3V @ 47µA 38 nC @ 10 V ±20V 3250 pF @ 40 V - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSON-8-5
    MSJPFR20N60-BP

    MSJPFR20N60-BP

    N-CHANNEL MOSFET,TO-220AB(H)

    Micro Commercial Co

    		 2,000 -
    RFQ
    		MSJPFR20N60-BP

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 17.9A (Tc) 10V 193mOhm @ 8.5A, 10V 5V @ 1.7mA 30 nC @ 10 V ±30V 1240 pF @ 100 V - 138W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB (H)
    MSJPFFR20N60-BP

    MSJPFFR20N60-BP

    N-CHANNEL MOSFET,TO-220F

    Micro Commercial Co

    		 1,986 -
    RFQ
    		MSJPFFR20N60-BP

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 12.3A (Tc) 10V 193mOhm @ 8.5A, 10V 5V @ 1.7mA 30 nC @ 10 V ±30V 1240 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
    XP65SL190DI

    XP65SL190DI

    MOSFET N-CH 650V 20A TO220CFM

    YAGEO XSEMI

    		 976 -
    RFQ
    		XP65SL190DI

    Datenblatt

         		XP65SL190D TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 190mOhm @ 6.2A, 10V 5V @ 250µA 92.8 nC @ 10 V ±20V 3312 pF @ 100 V - 1.92W (Ta), 34.7W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220CFM
    PSMN4R5-80YSFX

    PSMN4R5-80YSFX

    NEXTPOWER 80/100V MOSFETS

    Nexperia USA Inc.

    		 1,155 -
    RFQ
    		PSMN4R5-80YSFX

    Datenblatt

         		- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 7V, 10V 4.5mOhm @ 25A, 10V 4V @ 1mA 90 nC @ 10 V ±20V 6009 pF @ 40 V - 238W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
    STP18N60DM2

    STP18N60DM2

    MOSFET N-CH 600V 12A TO220

    STMicroelectronics

    		 880 -
    RFQ
    		STP18N60DM2

    Datenblatt

         		MDmesh™ DM2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 295mOhm @ 6A, 10V 5V @ 250µA 20 nC @ 10 V ±25V 800 pF @ 100 V - 90W (Tc) 150°C (TJ) - - Through Hole TO-220
    RS3P070ATTB1

    RS3P070ATTB1

    PCH -100V -7A POWER MOSFET: RS3P

    Rohm Semiconductor

    		 2,763 -
    RFQ
    		RS3P070ATTB1

    Datenblatt

         		- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 100 V 7A (Ta) 4.5V, 10V 36mOhm @ 7A, 10V 2.5V @ 1mA 115 nC @ 10 V ±20V 5150 pF @ 50 V - 2W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
    PSMN2R8-80SSFJ

    PSMN2R8-80SSFJ

    NEXTPOWER 80/100V MOSFETS

    Nexperia USA Inc.

    		 1,990 -
    RFQ
    		PSMN2R8-80SSFJ

    Datenblatt

         		- SOT-1235 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 190A (Ta) 7V, 10V 2.8mOhm @ 25A, 10V 4V @ 1mA 143 nC @ 10 V ±20V 10088 pF @ 40 V - 341W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK88 (SOT1235)
    IRFB4110PBFXKMA1

    IRFB4110PBFXKMA1

    TRENCH >=100V

    Infineon Technologies

    		 968 -
    RFQ

    -

    		 - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 9620 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
    NVMFS6H801NWFT1G

    NVMFS6H801NWFT1G

    MOSFET N-CH 80V 23A/157A 5DFN

    onsemi

    		 4,480 -
    RFQ
    		NVMFS6H801NWFT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 23A (Ta), 157A (Tc) 10V 2.8mOhm @ 50A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 4120 pF @ 40 V - 3.8W (Ta), 166W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 5-DFNW (4.9x5.9) (8-SOFL-WF)
    PJD100N06SA-AU_L2_006A1

    PJD100N06SA-AU_L2_006A1

    60V N-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 3,000 -
    RFQ
    		PJD100N06SA-AU_L2_006A1

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    PJD50N15S-AU_L2_006A1

    PJD50N15S-AU_L2_006A1

    150V N-CHANNEL ENHANCEMENT MODE

    Panjit International Inc.

    		 3,000 -
    RFQ
    		PJD50N15S-AU_L2_006A1

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    PJQ5560A-AU_R2_002A1

    PJQ5560A-AU_R2_002A1

    60V N-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 2,490 -
    RFQ
    		PJQ5560A-AU_R2_002A1

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    SQRS140ELP-T1_GE3

    SQRS140ELP-T1_GE3

    AUTOMOTIVE N-CHANNEL 40 V (D-S)

    Vishay Siliconix

    		 2,118 -
    RFQ
    		SQRS140ELP-T1_GE3

    Datenblatt

         		TrenchFET® GenIV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 504A (Tc) 4.5V, 10V 0.6mOhm @ 15A, 10V 2.2V @ 250µA 294 nC @ 10 V ±20V 15398 pF @ 25 V - 266W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8SW
    IRF9620SPBF

    IRF9620SPBF

    MOSFET P-CH 200V 3.5A D2PAK

    Vishay Siliconix

    		 1,997 -
    RFQ
    		IRF9620SPBF

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active P-Channel MOSFET (Metal Oxide) 200 V 3.5A (Tc) 10V 1.5Ohm @ 1.5A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 350 pF @ 25 V - 3W (Ta), 40W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    NTMJS2D5N06CLTWG

    NTMJS2D5N06CLTWG

    MOSFET N-CH 60V 31A/164A 8LFPAK

    onsemi

    		 2,980 -
    RFQ
    		NTMJS2D5N06CLTWG

    Datenblatt

         		- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 31A (Ta), 164A (Tc) 4.5V, 10V 2.4mOhm @ 50A, 10V 2V @ 135µA 52 nC @ 10 V ±20V 3600 pF @ 25 V - 3.9W (Ta), 113W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-LFPAK
    NVMFS5C430NWFAFT1G

    NVMFS5C430NWFAFT1G

    MOSFET N-CH 40V 35A/185A 5DFN

    onsemi

    		 1,480 -
    RFQ
    		NVMFS5C430NWFAFT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 35A (Ta), 185A (Tc) 10V 1.7mOhm @ 50A, 10V 3.5V @ 250µA 47 nC @ 10 V ±20V 3300 pF @ 25 V - 3.8W (Ta), 106W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 5-DFNW (4.9x5.9) (8-SOFL-WF)
    R6020YNZ4C13

    R6020YNZ4C13

    NCH 600V 20A, TO-247, POWER MOSF

    Rohm Semiconductor

    		 563 -
    RFQ
    		R6020YNZ4C13

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V, 12V 185mOhm @ 6A, 12V 6V @ 1.65mA 28 nC @ 10 V ±30V 1200 pF @ 100 V - 182W (Tc) 150°C (TJ) - - Through Hole TO-247
    NVMJS1D0N04CTWG

    NVMJS1D0N04CTWG

    MOSFET N-CH 40V 46A/300A 8LFPAK

    onsemi

    		 2,980 -
    RFQ
    		NVMJS1D0N04CTWG

    Datenblatt

         		- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 46A (Ta), 300A (Tc) 10V 0.92mOhm @ 50A, 10V 3.5V @ 190µA 86 nC @ 10 V ±20V 6100 pF @ 25 V - 3.9W (Ta), 166W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-LFPAK
    FDMS004N08C

    FDMS004N08C

    MOSFET N-CH 80V 126A 8PQFN

    onsemi

    		 2,794 -
    RFQ
    		FDMS004N08C

    Datenblatt

         		PowerTrench® 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 126A (Tc) 6V, 10V 4mOhm @ 44A, 10V 4V @ 250µA 55 nC @ 10 V ±20V 4250 pF @ 40 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6), Power56
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