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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    AON6152A

    AON6152A

    MOSFET N-CH 45V 58A/100A 8DFN

    Alpha & Omega Semiconductor Inc.

    		 2,986 -
    RFQ
    		AON6152A

    Datenblatt

         		AlphaSGT™ 8-PowerSMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 45 V 58A (Ta), 100A (Tc) 4.5V, 10V 1.15mOhm @ 20A, 10V 2.3V @ 250µA 155 nC @ 10 V ±20V 10000 pF @ 22.5 V - 7.3W (Ta), 208W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (5x6)
    IPB65R310CFDAATMA1

    IPB65R310CFDAATMA1

    MOSFET N-CH 650V 11.4A D2PAK

    Infineon Technologies

    		 2,403 -
    RFQ
    		IPB65R310CFDAATMA1

    Datenblatt

         		CoolMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 11.4A (Tc) 10V 310mOhm @ 4.4A, 10V 4.5V @ 440µA 41 nC @ 10 V ±20V 1110 pF @ 100 V - 104.2W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-3
    TSM60NE285CIT C0G

    TSM60NE285CIT C0G

    MOSFET

    Taiwan Semiconductor Corporation

    		 2,000 -
    RFQ

    -

    		 - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 9.5A (Tc) 10V, 12V 274mOhm @ 3.2A, 12V 6V @ 1.4mA 22 nC @ 10 V ±30V 894 pF @ 300 V - 56W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220TL
    SIHG20N50E-GE3

    SIHG20N50E-GE3

    MOSFET N-CH 500V 19A TO247AC

    Vishay Siliconix

    		 485 -
    RFQ
    		SIHG20N50E-GE3

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 19A (Tc) 10V 184mOhm @ 10A, 10V 4V @ 250µA 92 nC @ 10 V ±30V 1640 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
    PJD65N04S-AU_L2_002A1

    PJD65N04S-AU_L2_002A1

    40V N-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 3,000 -
    RFQ
    		PJD65N04S-AU_L2_002A1

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 26A (Ta), 167A (Tc) 4.5V, 10V 2.5mOhm @ 20A, 10V 2.3V @ 50µA 50 nC @ 10 V ±20V 3148 pF @ 25 V - 3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252AA
    NVMJS0D9N04CLTWG

    NVMJS0D9N04CLTWG

    MOSFET N-CH 40V 50A/330A 8LFPAK

    onsemi

    		 2,987 -
    RFQ
    		NVMJS0D9N04CLTWG

    Datenblatt

         		- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Ta), 330A (Tc) 4.5V, 10V 0.82mOhm @ 50A, 10V 2V @ 190µA 143 nC @ 10 V ±20V 8862 pF @ 25 V - 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-LFPAK
    DMT30M9LPS-13

    DMT30M9LPS-13

    MOSFET BVDSS: 25V-30V POWERDI506

    Diodes Incorporated

    		 2,490 -
    RFQ
    		DMT30M9LPS-13

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 1mOhm @ 25A, 10V 3V @ 250µA 160.5 nC @ 10 V ±20V 12121 pF @ 20 V - 2.6W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerDI5060-8 (Type K)
    NVMFWS0D7N04XMT1G

    NVMFWS0D7N04XMT1G

    40V T10M IN S08FL PACKAGE

    onsemi

    		 1,255 -
    RFQ
    		NVMFWS0D7N04XMT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 331A (Tc) 10V 0.7mOhm @ 50A, 10V 3.5V @ 180µA 74.5 nC @ 10 V ±20V 4657 pF @ 25 V - 134W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount, Wettable Flank 5-DFNW (4.9x5.9) (8-SOFL-WF)
    CDMSJ22013.8-650 SL

    CDMSJ22013.8-650 SL

    SUPER JUNCTION MOSFETS

    Central Semiconductor Corp

    		 493 -
    RFQ
    		CDMSJ22013.8-650 SL

    Datenblatt

         		- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 13.8A (Tc) 10V 280mOhm @ 4.4A, 10V 4V @ 250µA 30 nC @ 10 V 30V 1040 pF @ 400 V - 35.7W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220FP
    IPW65R420CFDFKSA2

    IPW65R420CFDFKSA2

    MOSFET N-CH 650V 8.7A TO247-3

    Infineon Technologies

    		 120 -
    RFQ
    		IPW65R420CFDFKSA2

    Datenblatt

         		CoolMOS™ CFD2 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 8.7A (Tc) 10V 420mOhm @ 3.4A, 10V 4.5V @ 300µA 31.5 nC @ 10 V ±20V 870 pF @ 100 V - 83.3W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3-41
    IXFP30N25X3M

    IXFP30N25X3M

    MOSFET N-CH 250V 30A TO220

    IXYS

    		 262 -
    RFQ
    		IXFP30N25X3M

    Datenblatt

         		HiPerFET™, Ultra X3 TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 250 V 30A (Tc) 10V 60mOhm @ 15A, 10V 4.5V @ 500µA 21 nC @ 10 V ±20V 1450 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Isolated Tab
    TSM60NC165CI C0G

    TSM60NC165CI C0G

    600V, 24A, SINGLE N-CHANNEL POWE

    Taiwan Semiconductor Corporation

    		 3,989 -
    RFQ
    		TSM60NC165CI C0G

    Datenblatt

         		- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 165mOhm @ 11.3A, 10V 5V @ 1mA 44 nC @ 10 V ±30V 1857 pF @ 300 V - 89W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220
    SUM40012EL-GE3

    SUM40012EL-GE3

    MOSFET N-CH 40V 150A TO263

    Vishay Siliconix

    		 2,434 -
    RFQ
    		SUM40012EL-GE3

    Datenblatt

         		TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 150A (Tc) 4.5V, 10V 1.67mOhm @ 30A, 10V 2.5V @ 250µA 195 nC @ 10 V ±20V 10930 pF @ 20 V - 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
    R6010YNX3C16

    R6010YNX3C16

    600V 10A TO-220AB, HIGH-SPEED SW

    Rohm Semiconductor

    		 1,000 -
    RFQ
    		R6010YNX3C16

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V, 12V 390mOhm @ 4.2A, 12V 6V @ 1.2mA 15 nC @ 10 V ±30V 600 pF @ 100 V - 92W (Tc) 150°C (TJ) - - Through Hole TO-220AB
    IPB60R210CFD7ATMA1

    IPB60R210CFD7ATMA1

    MOSFET N-CH 600V 12A TO263-3

    Infineon Technologies

    		 990 -
    RFQ
    		IPB60R210CFD7ATMA1

    Datenblatt

         		CoolMOS™ CFD7 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 210mOhm @ 4.9A, 10V 4.5V @ 250µA 23 nC @ 10 V ±20V 1015 pF @ 400 V - 64W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3-2
    TK9R7A15Q5,S4X

    TK9R7A15Q5,S4X

    150V UMOS10-HSD TO-220SIS 9.7MOH

    Toshiba Semiconductor and Storage

    		 388 -
    RFQ
    		TK9R7A15Q5,S4X

    Datenblatt

         		U-MOSX-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 150 V 49A (Tc) 8V, 10V 9.7mOhm @ 24.5A, 10V 4.5V @ 1.1mA 50 nC @ 10 V ±20V 3690 pF @ 75 V - 45W (Tc) 175°C - - Through Hole TO-220SIS
    IQE022N06LM5SCATMA1

    IQE022N06LM5SCATMA1

    OPTIMOS 5 POWER-TRANSISTOR 60V

    Infineon Technologies

    		 5,868 -
    RFQ
    		IQE022N06LM5SCATMA1

    Datenblatt

         		OptiMOS™ 5 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 24A (Ta), 151A (Tc) 4.5V, 10V 2.2mOhm @ 20A, 10V 2.3V @ 48µA 53 nC @ 10 V ±20V 4420 pF @ 30 V - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-WHSON-8-1
    IQE022N06LM5CGSCATMA1

    IQE022N06LM5CGSCATMA1

    OPTIMOS 5 POWER-TRANSISTOR 60V

    Infineon Technologies

    		 4,651 -
    RFQ
    		IQE022N06LM5CGSCATMA1

    Datenblatt

         		OptiMOS™ 5 9-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 24A (Ta), 151A (Tc) 4.5V, 10V 2.2mOhm @ 20A, 10V 2.3V @ 48µA 53 nC @ 10 V ±20V 4420 pF @ 30 V - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-WHTFN-9
    PJQ5590-AU_R2_002A1

    PJQ5590-AU_R2_002A1

    150V N-CHANNEL ENHANCEMENT MODE

    Panjit International Inc.

    		 3,000 -
    RFQ
    		PJQ5590-AU_R2_002A1

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    IPP034N08N5AKSA1

    IPP034N08N5AKSA1

    MOSFET N-CH 80V 120A TO220-3

    Infineon Technologies

    		 914 -
    RFQ
    		IPP034N08N5AKSA1

    Datenblatt

         		OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 3.4mOhm @ 100A, 10V 3.8V @ 108µA 87 nC @ 10 V ±20V 6240 pF @ 40 V - 167W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
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