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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    MCAC160N06Y-TP

    MCAC160N06Y-TP

    MOSFET N-CH 60 160A DFN5060

    Micro Commercial Co

    		 5,000 -
    RFQ
    		MCAC160N06Y-TP

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 160A (Tc) 6V, 10V 2.5mOhm @ 20A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 3586 pF @ 20 V - 150W (Tj) -55°C ~ 175°C (TJ) - - Surface Mount DFN5060
    TK20G60W,RVQ

    TK20G60W,RVQ

    MOSFET N CH 600V 20A D2PAK

    Toshiba Semiconductor and Storage

    		 1,960 -
    RFQ
    		TK20G60W,RVQ

    Datenblatt

         		DTMOSIV TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 155mOhm @ 10A, 10V 3.7V @ 1mA 48 nC @ 10 V ±30V 1680 pF @ 300 V - 165W (Tc) 150°C (TJ) - - Surface Mount D2PAK
    NVMFS6H824NLWFT1G

    NVMFS6H824NLWFT1G

    MOSFET N-CH 80V 20A/110A 5DFN

    onsemi

    		 1,490 -
    RFQ
    		NVMFS6H824NLWFT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 20A (Ta), 110A (Tc) 4.5V, 10V 4mOhm @ 20A, 10V 2V @ 140µA 52 nC @ 10 V ±20V 2900 pF @ 40 V - 3.8W (Ta), 116W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 5-DFN (5x6) (8-SOFL)
    FDP047N08-F102

    FDP047N08-F102

    MOSFET N-CH 75V 164A TO220-3

    onsemi

    		 3,179 -
    RFQ
    		FDP047N08-F102

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 75 V 164A (Tc) 10V 4.7mOhm @ 80A, 10V 4.5V @ 250µA 152 nC @ 10 V ±20V 9415 pF @ 25 V - 268W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
    NTMJST2D6N08HTXG

    NTMJST2D6N08HTXG

    TRENCH 8 80V LFPAK 5X7

    onsemi

    		 2,900 -
    RFQ
    		NTMJST2D6N08HTXG

    Datenblatt

         		- 10-PowerLSOP (0.209", 5.30mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 28A (Ta), 131.5A (Tc) 10V 2.8mOhm @ 50A, 10V 4V @ 250µA 68 nC @ 10 V ±20V 4405 pF @ 40 V - 5.3W (Ta), 116W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 10-TCPAK
    IPP030N10N5XKSA1

    IPP030N10N5XKSA1

    TRENCH >=100V

    Infineon Technologies

    		 500 -
    RFQ
    		IPP030N10N5XKSA1

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 6V, 10V 3mOhm @ 100A, 10V 3.8V @ 184µA 139 nC @ 10 V ±20V 10300 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
    SIDR220DP-T1-GE3

    SIDR220DP-T1-GE3

    MOSFET N-CH 25V 87.7A/100A PPAK

    Vishay Siliconix

    		 5,973 -
    RFQ
    		SIDR220DP-T1-GE3

    Datenblatt

         		TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25 V 87.7A (Ta), 100A (Tc) 4.5V, 10V 5.8mOhm @ 20A, 10V 2.1V @ 250µA 200 nC @ 10 V +16V, -12V 1085 pF @ 10 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8DC
    XPQ1R004PB,LXHQ

    XPQ1R004PB,LXHQ

    40V U-MOS IX-H L-TOGL 1.0MOHM

    Toshiba Semiconductor and Storage

    		 4,500 -
    RFQ
    		XPQ1R004PB,LXHQ

    Datenblatt

         		U-MOSIX-H 8-PowerBSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 200A (Ta) 6V, 10V 1mOhm @ 100A, 10V 3V @ 500µA 84 nC @ 10 V ±20V 6890 pF @ 10 V - 230W (Tc) 175°C Automotive AEC-Q101 Surface Mount L-TOGL™
    NVMFWS3D0P04M8LT1G

    NVMFWS3D0P04M8LT1G

    MV8 P INITIAL PROGRAM

    onsemi

    		 1,435 -
    RFQ
    		NVMFWS3D0P04M8LT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 28A (Ta), 183A (Tc) 4.5V, 10V 2.7mOhm @ 30A,10V 2.4V @ 2mA 124 nC @ 10 V ±20V 5827 pF @ 20 V - 3.9W (Ta), 171W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
    FDI150N10

    FDI150N10

    MOSFET N-CH 100V 57A I2PAK

    onsemi

    		 3,026 -
    RFQ
    		FDI150N10

    Datenblatt

         		PowerTrench® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 100 V 57A (Tc) 10V 16mOhm @ 49A, 10V 4.5V @ 250µA 69 nC @ 10 V ±20V 4760 pF @ 25 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262 (I2PAK)
    XP10NA011H

    XP10NA011H

    MOSFET N-CH 100V 48.5A TO252

    YAGEO XSEMI

    		 1,000 -
    RFQ
    		XP10NA011H

    Datenblatt

         		XS10NA011 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 48.5A (Tc) 6V, 10V 11mOhm @ 30A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 2288 pF @ 80 V - 2W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
    PSMQC042N10LS2_R2_00201

    PSMQC042N10LS2_R2_00201

    100V/ 4.2M/ EXCELLECT LOW FOM MO

    Panjit International Inc.

    		 5,980 -
    RFQ

    -

    		 - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    TK9R6E15Q5,S1X

    TK9R6E15Q5,S1X

    150V UMOS10-HSD TO-220 9.6MOHM

    Toshiba Semiconductor and Storage

    		 380 -
    RFQ
    		TK9R6E15Q5,S1X

    Datenblatt

         		U-MOSX-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 150 V 104A (Ta), 52A (Tc) 8V, 10V 9.6mOhm @ 26A, 10V 4.5V @ 1.1mA 50 nC @ 10 V ±20V 3690 pF @ 75 V - 200W (Tc) 175°C - - Through Hole TO-220
    IPL60R210P6AUMA1

    IPL60R210P6AUMA1

    MOSFET N-CH 600V 19.2A 4VSON

    Infineon Technologies

    		 3,000 -
    RFQ
    		IPL60R210P6AUMA1

    Datenblatt

         		CoolMOS™ P6 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 19.2A (Tc) 10V 210mOhm @ 7.6A, 10V 4.5V @ 630µA 37 nC @ 10 V ±20V 1750 pF @ 100 V - 151W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
    RD3G08BBJHRBTL

    RD3G08BBJHRBTL

    PCH -40V -80A, TO-252 (DPAK), PO

    Rohm Semiconductor

    		 2,396 -
    RFQ
    		RD3G08BBJHRBTL

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 80A (Ta) 4.5V, 10V 4.9mOhm @ 80A, 10V 2.5V @ 1mA 145 nC @ 10 V +5V, -20V 7350 pF @ 20 V - 142W (Tc) 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252
    IAUA180N08S5N026AUMA1

    IAUA180N08S5N026AUMA1

    MOSFET_(75V 120V( PG-HSOF-5

    Infineon Technologies

    		 1,468 -
    RFQ
    		IAUA180N08S5N026AUMA1

    Datenblatt

         		OptiMOS™ 5-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 180A (Tj) 6V, 10V 2.6mOhm @ 90A, 10V 3.8V @ 100µA 87 nC @ 10 V ±20V 5980 pF @ 40 V - 179W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-5-4
    NTMFS5C612NT1G

    NTMFS5C612NT1G

    NFET SO8FL 60V 235A 1.5MO

    onsemi

    		 430 -
    RFQ
    		NTMFS5C612NT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 35A (Ta), 230A (Tc) 10V 1.6mOhm @ 50A, 10V 4V @ 250µA 60.2 nC @ 10 V ±20V 4830 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
    IQE046N08LM5SCATMA1

    IQE046N08LM5SCATMA1

    OPTIMOS 5 POWER-TRANSISTOR 60V

    Infineon Technologies

    		 5,670 -
    RFQ
    		IQE046N08LM5SCATMA1

    Datenblatt

         		OptiMOS™ 5 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 15.6A (Ta), 99A (Tc) 4.5V, 10V 4.6mOhm @ 20A, 10V 2.3V @ 47µA 38 nC @ 10 V ±20V 3250 pF @ 40 V - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-WHSON-8-1
    TPW5200FNH,L1Q

    TPW5200FNH,L1Q

    PB-F POWER MOSFET TRANSISTOR DSO

    Toshiba Semiconductor and Storage

    		 4,655 -
    RFQ
    		TPW5200FNH,L1Q

    Datenblatt

         		U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250 V 26A (Tc) 10V 52mOhm @ 13A, 10V 4V @ 1mA 22 nC @ 10 V ±20V 2200 pF @ 100 V - 800mW (Ta), 142W (Tc) 150°C - - Surface Mount 8-DSOP Advance
    PJD60N04V-AU_L2_002A1

    PJD60N04V-AU_L2_002A1

    40V N-CHANNEL ENHANCEMENT MODE M

    Panjit International Inc.

    		 3,000 -
    RFQ
    		PJD60N04V-AU_L2_002A1

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 25A (Ta), 154A (Tc) 7V, 10V 2.7mOhm @ 20A, 10V 3.5V @ 50µA 43 nC @ 10 V ±20V 3054 pF @ 25 V - 3W (Ta), 115W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252AA
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