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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IQDH88N06LM5CGATMA1

    IQDH88N06LM5CGATMA1

    TRENCH 40<-<100V

    Infineon Technologies

    		 3,940 -
    RFQ
    		IQDH88N06LM5CGATMA1

    Datenblatt

         		OptiMOS™ 5 9-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 42A (Ta), 447A (Tc) 4.5V, 10V 0.86mOhm @ 50A, 10V 2.3V @ 163µA 152 nC @ 10 V ±20V 14000 pF @ 30 V - 3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TTFN-9-U02
    MCAC160N06YHE3-TP

    MCAC160N06YHE3-TP

    MOSFET N-CH 60 160A DFN5060

    Micro Commercial Co

    		 4,791 -
    RFQ
    		MCAC160N06YHE3-TP

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 160A (Tc) 6V, 10V 2.5mOhm @ 20A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 3586 pF @ 20 V - 150W (Tj) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN5060
    PJMF190N60E1_T0_00001

    PJMF190N60E1_T0_00001

    600V SUPER JUNCITON MOSFET

    Panjit International Inc.

    		 1,826 -
    RFQ
    		PJMF190N60E1_T0_00001

    Datenblatt

         		- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 190mOhm @ 9.5A, 10V 4V @ 250µA 40 nC @ 10 V ±30V 1410 pF @ 400 V - 38W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220AB-F
    IAUMN08S5N013GAUMA1

    IAUMN08S5N013GAUMA1

    MOSFET_(75V 120V(

    Infineon Technologies

    		 1,965 -
    RFQ
    		IAUMN08S5N013GAUMA1

    Datenblatt

         		OptiMOS™ 5 4-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 250A (Tj) 6V, 10V 1.3mOhm @ 100A, 10V 3.8V @ 214µA 179 nC @ 10 V ±20V 12496 pF @ 40 V - 307W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HSOG-4-1
    FCPF190N60E-F154

    FCPF190N60E-F154

    MOSFET N-CH 600V 20.6A TO220F-3

    onsemi

    		 1,000 -
    RFQ
    		FCPF190N60E-F154

    Datenblatt

         		SuperFET® II TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 20.6A (Tj) - 190mOhm @ 10A, 10V 3.5V @ 250µA 82 nC @ 10 V ±20V 3175 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    IPB65R190CFDATMA2

    IPB65R190CFDATMA2

    MOSFET N-CH 650V 17.5A TO263-3

    Infineon Technologies

    		 893 -
    RFQ
    		IPB65R190CFDATMA2

    Datenblatt

         		CoolMOS™ CFD2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 17.5A (Tc) 10V 190mOhm @ 7.3A, 10V 4.5V @ 700µA 68 nC @ 10 V ±20V 1850 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3
    SIDR570EP-T1-RE3

    SIDR570EP-T1-RE3

    N-CHANNEL 150 V (D-S) 175C MOSFE

    Vishay Siliconix

    		 5,990 -
    RFQ
    		SIDR570EP-T1-RE3

    Datenblatt

         		TrenchFET® Gen V PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 30.8A (Ta), 90.9A (Tc) 7.5V, 10V 7.9mOhm @ 20A, 10V 4V @ 250µA 71 nC @ 10 V ±20V 3740 pF @ 75 V - 7.5W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® SO-8DC
    NVMFS5H600NLT1G

    NVMFS5H600NLT1G

    MOSFET N-CH 60V 35A/250A 5DFN

    onsemi

    		 1,500 -
    RFQ
    		NVMFS5H600NLT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 35A (Ta), 250A (Tc) 4.5V, 10V 1.3mOhm @ 50A, 10V 2V @ 250µA 89 nC @ 10 V ±20V 6680 pF @ 30 V - 3.3W (Ta), 160W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
    IRF740LCPBF-BE3

    IRF740LCPBF-BE3

    MOSFET N-CH 400V 10A TO220AB

    Vishay Siliconix

    		 975 -
    RFQ
    		IRF740LCPBF-BE3

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) - 550mOhm @ 6A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    IQD009N06NM5CGATMA1

    IQD009N06NM5CGATMA1

    OPTIMOS 6 POWER-TRANSISTOR

    Infineon Technologies

    		 4,872 -
    RFQ
    		IQD009N06NM5CGATMA1

    Datenblatt

         		OptiMOS™ 5 9-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 42A (Ta), 445A (Tc) 6V, 10V 0.9mOhm @ 50A, 10V 3.3V @ 163µA 150 nC @ 10 V ±20V 12000 pF @ 30 V - 3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TTFN-9-U02
    TK7R4A15Q5,S4X

    TK7R4A15Q5,S4X

    150V UMOS10-HSD TO-220SIS 7.4MOH

    Toshiba Semiconductor and Storage

    		 400 -
    RFQ
    		TK7R4A15Q5,S4X

    Datenblatt

         		U-MOSX-H TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 150 V 57A (Tc) 8V, 10V 7.4mOhm @ 28.5A, 10V 4.5V @ 1.4mA 66 nC @ 10 V ±20V 4970 pF @ 75 V - 46W (Tc) 175°C - - Through Hole TO-220SIS
    IPL60R180P6AUMA1

    IPL60R180P6AUMA1

    MOSFET N-CH 600V 22.4A 4VSON

    Infineon Technologies

    		 4,990 -
    RFQ
    		IPL60R180P6AUMA1

    Datenblatt

         		CoolMOS™ P6 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 22.4A (Tc) 10V 180mOhm @ 9A, 10V 4.5V @ 750µA 44 nC @ 10 V ±20V 2080 pF @ 100 V - 176W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-VSON-4
    IPB60R160P6ATMA1

    IPB60R160P6ATMA1

    MOSFET N-CH 600V 23.8A D2PAK

    Infineon Technologies

    		 2,219 -
    RFQ
    		IPB60R160P6ATMA1

    Datenblatt

         		CoolMOS™ P6 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 23.8A (Tc) 10V 160mOhm @ 9A, 10V 4.5V @ 750µA 44 nC @ 10 V ±20V 2080 pF @ 100 V - 176W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3
    TSM60NE200CIT C0G

    TSM60NE200CIT C0G

    MOSFET

    Taiwan Semiconductor Corporation

    		 2,000 -
    RFQ

    -

    		 - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V, 12V 185mOhm @ 4A, 12V 6V @ 1.65mA 30 nC @ 10 V ±30V 1238 pF @ 300 V - 63W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220TL
    IAUA180N10S5N029AUMA1

    IAUA180N10S5N029AUMA1

    MOSFET_(75V 120V( PG-HSOF-5

    Infineon Technologies

    		 1,926 -
    RFQ
    		IAUA180N10S5N029AUMA1

    Datenblatt

         		OptiMOS™ 5-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tj) 6V, 10V 2.9mOhm @ 90A, 10V 3.8V @ 130µA 105 nC @ 10 V ±20V 7673 pF @ 50 V - 221W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-5-4
    TK210V65Z,LQ

    TK210V65Z,LQ

    MOSFET N-CH 650V 15A 5DFN

    Toshiba Semiconductor and Storage

    		 4,630 -
    RFQ
    		TK210V65Z,LQ

    Datenblatt

         		DTMOSVI 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Ta) 10V 210mOhm @ 7.5A, 10V 4V @ 610µA 25 nC @ 10 V ±30V 1370 pF @ 300 V - 130W (Tc) 150°C - - Surface Mount 4-DFN-EP (8x8)
    MCB2D8N04YHQ-TP

    MCB2D8N04YHQ-TP

    POWER MOSFET

    Micro Commercial Co

    		 1,600 -
    RFQ
    		MCB2D8N04YHQ-TP

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 164A (Tc) 10V 2.8mOhm @ 20A, 10V 4V @ 250µA 42 nC @ 10 V ±20V 3540 pF @ 25 V - 136W (Tj) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK
    RD3R05BBHTL1

    RD3R05BBHTL1

    NCH 150V 50A, TO-252, POWER MOSF

    Rohm Semiconductor

    		 2,370 -
    RFQ
    		RD3R05BBHTL1

    Datenblatt

         		- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 50A (Tc) 6V, 10V 29mOhm @ 25A, 10V 4V @ 1mA 37 nC @ 10 V ±20V 2150 pF @ 75 V - 89W (Tc) 150°C (TJ) - - Surface Mount TO-252
    TK7R2E15Q5,S1X

    TK7R2E15Q5,S1X

    150V UMOS10-HSD TO-220 7.2MOHM

    Toshiba Semiconductor and Storage

    		 400 -
    RFQ
    		TK7R2E15Q5,S1X

    Datenblatt

         		U-MOSX-H TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 150 V 130A (Ta), 84A (Tc) 8V, 10V 7.2mOhm @ 42A, 10V 4.5V @ 1.4mA 66 nC @ 10 V ±20V 4970 pF @ 75 V - 230W (Tc) 175°C - - Through Hole TO-220
    IPT65R155CFD7XTMA1

    IPT65R155CFD7XTMA1

    HIGH POWER_NEW

    Infineon Technologies

    		 2,000 -
    RFQ
    		IPT65R155CFD7XTMA1

    Datenblatt

         		- 8-PowerSFN Tape & Reel (TR) Active - - 650 V - - - - - - - - - - - - Surface Mount PG-HSOF-8-3
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