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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IPDQ65R099CFD7XTMA1

    IPDQ65R099CFD7XTMA1

    HIGH POWER_NEW

    Infineon Technologies

    		 750 -
    RFQ
    		IPDQ65R099CFD7XTMA1

    Datenblatt

         		CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 29A (Tc) 10V 99mOhm @ 9.7A, 10V 4.5V @ 480µA 39 nC @ 10 V ±20V 1942 pF @ 400 V - 186W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HDSOP-22-1
    DMTH10H2M5STLW-13

    DMTH10H2M5STLW-13

    MOSFET BVDSS: 61V~100V POWERDI10

    Diodes Incorporated

    		 1,257 -
    RFQ
    		DMTH10H2M5STLW-13

    Datenblatt

         		- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 215A (Tc) 10V 2.5mOhm @ 30A, 10V 4V @ 250µA 124.4 nC @ 10 V ±20V 8450 pF @ 50 V - 5.8W (Ta), 230.8W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount POWERDI1012-8
    SIHP17N80E-GE3

    SIHP17N80E-GE3

    MOSFET N-CH 800V 15A TO220AB

    Vishay Siliconix

    		 1,000 -
    RFQ
    		SIHP17N80E-GE3

    Datenblatt

         		E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 15A (Tc) 10V 290mOhm @ 8.5A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2408 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    SPI21N50C3XKSA1

    SPI21N50C3XKSA1

    MOSFET N-CH 560V 21A TO262-3

    Infineon Technologies

    		 940 -
    RFQ
    		SPI21N50C3XKSA1

    Datenblatt

         		CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 560 V 21A (Tc) 10V 190mOhm @ 13.1A, 10V 3.9V @ 1mA 95 nC @ 10 V ±20V 2400 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3-1
    IPA65R150CFDXKSA2

    IPA65R150CFDXKSA2

    MOSFET N-CH 650V 22.4A TO220

    Infineon Technologies

    		 494 -
    RFQ
    		IPA65R150CFDXKSA2

    Datenblatt

         		CoolMOS™ CFD2 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 22.4A (Tc) 10V 150mOhm @ 9.3A, 10V 4.5V @ 900µA 86 nC @ 10 V ±20V 2340 pF @ 100 V - 34.7W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
    SIHA150N60E-GE3

    SIHA150N60E-GE3

    E SERIES POWER MOSFET THIN-LEAD

    Vishay Siliconix

    		 2,000 -
    RFQ
    		SIHA150N60E-GE3

    Datenblatt

         		E TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 155mOhm @ 10A, 10V 5V @ 250µA 36 nC @ 10 V ±30V 1514 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
    S1M1000170D

    S1M1000170D

    MOSFET SILICON CARBIDE SIC 1700V

    SMC Diode Solutions

    		 290 -
    RFQ
    		S1M1000170D

    Datenblatt

         		- TO-247-3 Tube Active N-Channel SiC (Silicon Carbide Junction Transistor) 1700 V 5.2A (Tc) 20V 1.3Ohm @ 2A, 20V 4V @ 500µA 10 nC @ 20 V +25V, -10V 160 pF @ 1000 V - 81W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247AD
    SIHA22N60AE-GE3

    SIHA22N60AE-GE3

    N-CHANNEL 600V

    Vishay Siliconix

    		 979 -
    RFQ
    		SIHA22N60AE-GE3

    Datenblatt

         		E TO-220-3 Full Pack Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 96 nC @ 10 V ±30V 1451 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
    IRFIBF30GPBF

    IRFIBF30GPBF

    MOSFET N-CH 900V 1.9A TO220-3

    Vishay Siliconix

    		 888 -
    RFQ
    		IRFIBF30GPBF

    Datenblatt

         		- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 900 V 1.9A (Tc) 10V 3.7Ohm @ 1.1A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1200 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
    IPP023N08N5AKSA1

    IPP023N08N5AKSA1

    MOSFET N-CH 80V 120A TO220-3

    Infineon Technologies

    		 352 -
    RFQ
    		IPP023N08N5AKSA1

    Datenblatt

         		OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 2.3mOhm @ 100A, 10V 3.8V @ 208µA 166 nC @ 10 V ±20V 12100 pF @ 40 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
    IQDH35N03LM5ATMA1

    IQDH35N03LM5ATMA1

    TRENCH <= 40V

    Infineon Technologies

    		 4,823 -
    RFQ
    		IQDH35N03LM5ATMA1

    Datenblatt

         		OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 66A (Ta), 700A (Tc) 4.5V, 10V 0.35mOhm @ 50A, 10V 2V @ 1.46mA 262 nC @ 10 V ±20V 18000 pF @ 15 V - 2.5W (Ta), 278W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TSON-8-9
    DMTH4M70SPGWQ-13

    DMTH4M70SPGWQ-13

    MOSFET BVDSS: 31V~40V POWERDI808

    Diodes Incorporated

    		 4,692 -
    RFQ
    		DMTH4M70SPGWQ-13

    Datenblatt

         		- SOT-1235 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 460A (Tc) 10V 0.7mOhm @ 25A, 10V 4V @ 250µA 117.1 nC @ 10 V ±20V 10053 pF @ 20 V - 5.6W (Ta), 428W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerDI8080-5
    AONS66916

    AONS66916

    N

    Alpha & Omega Semiconductor Inc.

    		 2,756 -
    RFQ
    		AONS66916

    Datenblatt

         		AlphaSGT™ 8-PowerSMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 6V, 10V 3.6mOhm @ 20A, 10V 3.6V @ 250µA 95 nC @ 10 V ±20V 5325 pF @ 50 V - 215W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (5x6)
    TSM60NC196CM2 RNG

    TSM60NC196CM2 RNG

    600V, 28A, SINGLE N-CHANNEL POWE

    Taiwan Semiconductor Corporation

    		 2,394 -
    RFQ
    		TSM60NC196CM2 RNG

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 196mOhm @ 9.5A, 10V 5V @ 1mA 39 nC @ 10 V ±20V 1566 pF @ 300 V - 152W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263AB (D2PAK)
    SIHA155N60EF-GE3

    SIHA155N60EF-GE3

    E SERIES POWER MOSFET THIN-LEAD

    Vishay Siliconix

    		 1,842 -
    RFQ
    		SIHA155N60EF-GE3

    Datenblatt

         		EF TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 89mOhm @ 3.7A, 10V 5V @ 250µA 38 nC @ 10 V ±20V 1465 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
    PSMN2R9-100SSEJ

    PSMN2R9-100SSEJ

    POWERMOS ASFETS

    Nexperia USA Inc.

    		 2,000 -
    RFQ

    -

    		 - SOT-1235 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 210A (Ta) 10V 2.9mOhm @ 25A, 10V 3.6V @ 1mA 188 nC @ 10 V ±20V 13280 pF @ 50 V - 341W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK88 (SOT1235)
    PSMN2R5-80SSEJ

    PSMN2R5-80SSEJ

    POWERMOS ASFETS

    Nexperia USA Inc.

    		 1,995 -
    RFQ

    -

    		 - SOT-1235 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 190A (Ta) 10V 2.5mOhm @ 25A, 10V 3.6V @ 1mA 174 nC @ 10 V ±20V 13485 pF @ 40 V - 341W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK88 (SOT1235)
    FCMT360N65S3

    FCMT360N65S3

    MOSFET N-CH 650V 10A 4PQFN

    onsemi

    		 9,699 -
    RFQ
    		FCMT360N65S3

    Datenblatt

         		SuperFET® III 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 10A (Tc) 10V 360mOhm @ 5A, 10V 4.5V @ 200µA 18 nC @ 10 V ±30V 730 pF @ 400 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 4-PQFN (8x8)
    IQDH45N04LM6ATMA1

    IQDH45N04LM6ATMA1

    TRENCH <= 40V

    Infineon Technologies

    		 4,610 -
    RFQ
    		IQDH45N04LM6ATMA1

    Datenblatt

         		OptiMOS™ 6 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Ta), 637A (Tc) 4.5V, 10V 0.45mOhm @ 50A, 10V 2.3V @ 1.449mA 172 nC @ 10 V ±20V 12000 pF @ 20 V - 3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSON-8-9
    R6014YNX3C16

    R6014YNX3C16

    NCH 600V 14A, TO-220AB, POWER MO

    Rohm Semiconductor

    		 988 -
    RFQ
    		R6014YNX3C16

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 14A (Tc) 10V, 12V 260mOhm @ 5A, 12V 6V @ 1.4mA 20 nC @ 10 V ±30V 890 pF @ 100 V - 132W (Tc) 150°C (TJ) - - Through Hole TO-220AB
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