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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    RX3G07BBGC16

    RX3G07BBGC16

    NCH 40V 70A, TO-220AB, POWER MO

    Rohm Semiconductor

    		 930 -
    RFQ
    		RX3G07BBGC16

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 40 V 70A (Tc) 4.5V, 10V 3mOhm @ 70A, 10V 2.5V @ 1mA 56 nC @ 10 V ±20V 3540 pF @ 20 V - 89W (Tc) 150°C (TJ) - - Through Hole TO-220AB
    NTMJS0D7N03CGTWG

    NTMJS0D7N03CGTWG

    WIDE SOA

    onsemi

    		 2,568 -
    RFQ
    		NTMJS0D7N03CGTWG

    Datenblatt

         		- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 59A (Ta), 410A (Tc) 10V 0.65mOhm @ 30A, 10V 2.2V @ 280µA 147 nC @ 10 V ±20V 12300 pF @ 15 V - 4W (Ta), 188W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-LFPAK
    SIHP150N60E-GE3

    SIHP150N60E-GE3

    E SERIES POWER MOSFET TO-220AB,

    Vishay Siliconix

    		 1,985 -
    RFQ
    		SIHP150N60E-GE3

    Datenblatt

         		E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 155mOhm @ 10A, 10V 5V @ 250µA 36 nC @ 10 V ±30V 1514 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    NVMFWS0D5N04XMT1G

    NVMFWS0D5N04XMT1G

    40V T10M IN S08FL GEN 2 PACKAGE

    onsemi

    		 1,280 -
    RFQ
    		NVMFWS0D5N04XMT1G

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 423A (Tc) 10V 0.52mOhm @ 50A, 10V 3.5V @ 240µA 100 nC @ 10 V ±20V 6250 pF @ 25 V - 163W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6)
    RX3L07BBGC16

    RX3L07BBGC16

    NCH 60V 70A, TO-220AB, POWER MO

    Rohm Semiconductor

    		 920 -
    RFQ
    		RX3L07BBGC16

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 70A (Tc) 4.5V, 10V 4.6mOhm @ 70A, 10V 2.5V @ 1mA 47 nC @ 10 V ±20V 2950 pF @ 30 V - 89W (Tc) 150°C (TJ) - - Through Hole TO-220AB
    IPB120N10S403ATMA1

    IPB120N10S403ATMA1

    MOSFET N-CH 100V 120A D2PAK

    Infineon Technologies

    		 728 -
    RFQ
    		IPB120N10S403ATMA1

    Datenblatt

         		OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 3.5mOhm @ 100A, 10V 3.5V @ 180µA 140 nC @ 10 V ±20V 10120 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-3
    IPT65R125CFD7XTMA1

    IPT65R125CFD7XTMA1

    HIGH POWER_NEW

    Infineon Technologies

    		 2,000 -
    RFQ
    		IPT65R125CFD7XTMA1

    Datenblatt

         		- 8-PowerSFN Tape & Reel (TR) Active - - 650 V - - - - - - - - - - - - Surface Mount PG-HSOF-8-3
    IPL60R115CFD7AUMA1

    IPL60R115CFD7AUMA1

    HIGH POWER_NEW

    Infineon Technologies

    		 2,500 -
    RFQ
    		IPL60R115CFD7AUMA1

    Datenblatt

         		- 4-PowerTSFN Tape & Reel (TR) Active - - - 22A (Tc) - - - - - - - - - - - Surface Mount PG-VSON-4
    IPTG025N08NM5ATMA1

    IPTG025N08NM5ATMA1

    TRENCH 40<-<100V PG-HSOG-8

    Infineon Technologies

    		 1,800 -
    RFQ
    		IPTG025N08NM5ATMA1

    Datenblatt

         		OptiMOS™ 8-PowerSMD, Gull Wing Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 28A (Ta), 184A (Tc) 6V, 10V 2.5mOhm @ 150A 10V 3.8V @ 108µA 87 nC @ 10 V ±20V 6500 pF @ 40 V - 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOG-8-1
    BUK7J1R0-40HX

    BUK7J1R0-40HX

    BUK7J1R0-40H/SOT1023/4 LEADS

    Nexperia USA Inc.

    		 2,079 -
    RFQ
    		BUK7J1R0-40HX

    Datenblatt

         		- - Tape & Reel (TR) Active - - - 220A (Tc) - - - - +20V, -10V - - - - Automotive AEC-Q101 - -
    IPA60R120C7XKSA1

    IPA60R120C7XKSA1

    MOSFET N-CH 600V 11A TO220

    Infineon Technologies

    		 614 -
    RFQ
    		IPA60R120C7XKSA1

    Datenblatt

         		CoolMOS™ C7 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 120mOhm @ 7.8A, 10V 4V @ 390µA 34 nC @ 10 V ±20V 1500 pF @ 400 V - 32W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-FP
    IPB60R125CFD7ATMA1

    IPB60R125CFD7ATMA1

    MOSFET N-CH 600V 18A TO263-3

    Infineon Technologies

    		 345 -
    RFQ
    		IPB60R125CFD7ATMA1

    Datenblatt

         		CoolMOS™ CFD7 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 125mOhm @ 7.8A, 10V 4.5V @ 390µA 36 nC @ 10 V ±20V 1503 pF @ 400 V - 92W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3-2
    FQAF11N90C

    FQAF11N90C

    MOSFET N-CH 900V 7A TO3PF

    onsemi

    		 292 -
    RFQ
    		FQAF11N90C

    Datenblatt

         		QFET® TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 900 V 7A (Tc) 10V 1.1Ohm @ 3.5A, 10V 5V @ 250µA 80 nC @ 10 V ±30V 3290 pF @ 25 V - 120W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-3PF
    NTMFSS1D3N06CL

    NTMFSS1D3N06CL

    60V T6 MAX DIE IN 5X6 SOURCE DOW

    onsemi

    		 2,980 -
    RFQ
    		NTMFSS1D3N06CL

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 31A (Ta), 243A (Tc) 4.5V, 10V 1.3mOhm @ 50A, 10V 2V @ 250µA 117 nC @ 10 V ±20V 8190 pF @ 30 V - 2.5W (Ta), 153W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 9-TDFN (5x6)
    SIHP155N60EF-GE3

    SIHP155N60EF-GE3

    EF SERIES POWER MOSFET WITH FAST

    Vishay Siliconix

    		 1,995 -
    RFQ
    		SIHP155N60EF-GE3

    Datenblatt

         		EF TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 155mOhm @ 10A, 10V 5V @ 250µA 38 nC @ 10 V ±20V 1465 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    IQD005N04NM6ATMA1

    IQD005N04NM6ATMA1

    TRENCH <= 40V

    Infineon Technologies

    		 4,889 -
    RFQ
    		IQD005N04NM6ATMA1

    Datenblatt

         		OptiMOS™ 6 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 58A (Ta), 610A (Tc) 6V, 10V 0.47mOhm @ 50A, 10V 2.8V @ 1.449mA 163 nC @ 10 V ±20V 12000 pF @ 20 V - 3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSON-8-9
    CDF56G6511N TR13 PBFREE

    CDF56G6511N TR13 PBFREE

    650V, 11A, N-CHANNEL GAN FET IN

    Central Semiconductor Corp

    		 2,325 -
    RFQ
    		CDF56G6511N TR13 PBFREE

    Datenblatt

         		- 8-PowerVDFN Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 650 V 11.5A (Tc) 6V 190mOhm @ 3.9A, 6V 2.5V @ 12.2mA 2.8 nC @ 6 V +7V, -1.4V 96 pF @ 400 V - 1.1W (Ta), 84W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount, Wettable Flank 8-DFN (5x6)
    PSMB033N10NS2_R2_00201

    PSMB033N10NS2_R2_00201

    100V/ 3.3M / TO-263AB FOR INDUST

    Panjit International Inc.

    		 1,600 -
    RFQ
    		PSMB033N10NS2_R2_00201

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    SIHB17N80E-GE3

    SIHB17N80E-GE3

    MOSFET N-CH 800V 15A D2PAK

    Vishay Siliconix

    		 888 -
    RFQ
    		SIHB17N80E-GE3

    Datenblatt

         		E TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 800 V 15A (Tc) 10V 290mOhm @ 8.5A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2408 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    MSJP11N80A-BP

    MSJP11N80A-BP

    N-CHANNEL MOSFET, TO-220AB(H)

    Micro Commercial Co

    		 4,992 -
    RFQ

    -

    		 - TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 11A (Tc) 10V 470mOhm @ 7.1A, 10V 4.5V @ 250µA 24 nC @ 10 V ±20V 918 pF @ 400 V - 250W (Tj) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB (H)
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