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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    SIHB11N80E-GE3

    SIHB11N80E-GE3

    MOSFET N-CH 800V 12A D2PAK

    Vishay Siliconix

    		 4,800 -
    RFQ
    		SIHB11N80E-GE3

    Datenblatt

         		E TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 800 V 12A (Tc) 10V 440mOhm @ 5.5A, 10V 4V @ 250µA 88 nC @ 10 V ±30V 1670 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    MSJW20N65A-BP

    MSJW20N65A-BP

    MOSFET N-CH TO247

    Micro Commercial Co

    		 5,395 -
    RFQ
    		MSJW20N65A-BP

    Datenblatt

         		- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 180mOhm @ 10A, 10V 5V @ 250µA 54 nC @ 10 V ±30V 1740 pF @ 100 V - 250W (Tj) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    AONA66916

    AONA66916

    LINEAR IC

    Alpha & Omega Semiconductor Inc.

    		 4,700 -
    RFQ

    -

    		 AlphaSGT™ 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 30A (Ta), 197A (Tc) 6V, 10V 3.4mOhm @ 20A, 10V 3.6V @ 250µA 95 nC @ 10 V ±20V 5300 pF @ 50 V - 7.5W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-DFN (5x6)
    IPB65R145CFD7AATMA1

    IPB65R145CFD7AATMA1

    AUTOMOTIVE_COOLMOS PG-TO263-3

    Infineon Technologies

    		 860 -
    RFQ
    		IPB65R145CFD7AATMA1

    Datenblatt

         		CoolMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 17A (Tc) 10V 145mOhm @ 8.5A, 10V 4.5V @ 420µA 36 nC @ 10 V ±20V 1694 pF @ 400 V - 98W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3
    IPP020N08N5AKSA1

    IPP020N08N5AKSA1

    MOSFET N-CH 80V 120A TO220-3

    Infineon Technologies

    		 562 -
    RFQ
    		IPP020N08N5AKSA1

    Datenblatt

         		OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 2mOhm @ 100A, 10V 3.8V @ 280µA 223 nC @ 10 V ±20V 16900 pF @ 40 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
    RX3P07BBHC16

    RX3P07BBHC16

    NCH 100V 70A, TO-220AB, POWER MO

    Rohm Semiconductor

    		 968 -
    RFQ
    		RX3P07BBHC16

    Datenblatt

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 6V, 10V 8.4mOhm @ 70A, 10V 4V @ 1mA 38 nC @ 10 V ±20V 2410 pF @ 50 V - 89W (Tc) 150°C (TJ) - - Through Hole TO-220AB
    IPP100N06S2L05AKSA2

    IPP100N06S2L05AKSA2

    MOSFET N-CH 55V 100A TO220-3

    Infineon Technologies

    		 456 -
    RFQ
    		IPP100N06S2L05AKSA2

    Datenblatt

         		OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 4.5V, 10V 4.7mOhm @ 80A, 10V 2V @ 250µA 230 nC @ 10 V ±20V 5660 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
    AUIRFS8407-7TRL

    AUIRFS8407-7TRL

    MOSFET N-CH 40V 240A D2PAK

    Infineon Technologies

    		 791 -
    RFQ
    		AUIRFS8407-7TRL

    Datenblatt

         		HEXFET® TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.3mOhm @ 100A, 10V 3.9V @ 150µA 225 nC @ 10 V ±20V 7437 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK (7-Lead)
    NVB125N65S3

    NVB125N65S3

    SF3 650V EASY 125MOHM D2PAK AUTO

    onsemi

    		 648 -
    RFQ
    		NVB125N65S3

    Datenblatt

         		SuperFET® III TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 125mOhm @ 12A, 10V 4.5V @ 590µA 46 nC @ 10 V ±30V 1940 pF @ 400 V - 181W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    FDMS86150A

    FDMS86150A

    FET 100V 4.85 MOHM PQFN56

    onsemi

    		 2,950 -
    RFQ
    		FDMS86150A

    Datenblatt

         		PowerTrench® 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 16A (Ta), 60A (Tc) 6V, 10V 4.85mOhm @ 16A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 4665 pF @ 50 V - 2.7W (Ta), 113W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount Power56
    TSM60NE145CIT C0G

    TSM60NE145CIT C0G

    MOSFET

    Taiwan Semiconductor Corporation

    		 2,000 -
    RFQ

    -

    		 - TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 14.5A (Tc) 10V, 12V 135mOhm @ 4.8A, 12V 6V @ 2mA 40 nC @ 10 V ±30V 1661 pF @ 300 V - 69W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220TL
    IAUMN08S5N012GAUMA1

    IAUMN08S5N012GAUMA1

    MOSFET_(75V 120V(

    Infineon Technologies

    		 1,901 -
    RFQ
    		IAUMN08S5N012GAUMA1

    Datenblatt

         		OptiMOS™ 5 4-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 300A (Tj) 6V, 10V 1.2mOhm @ 100A, 10V 3.8V @ 232µA 194 nC @ 10 V ±20V 13550 pF @ 40 V - 325W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HSOG-4-1
    IPB50R140CPATMA1

    IPB50R140CPATMA1

    MOSFET N-CH 550V 23A TO263-3

    Infineon Technologies

    		 1,000 -
    RFQ
    		IPB50R140CPATMA1

    Datenblatt

         		CoolMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 550 V 23A (Tc) 10V 140mOhm @ 14A, 10V 3.5V @ 930µA 64 nC @ 10 V ±20V 2540 pF @ 100 V - 192W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3-2
    NVMJST2D6N08HTXG

    NVMJST2D6N08HTXG

    TRENCH 8 80V LFPAK 5X7

    onsemi

    		 5,950 -
    RFQ
    		NVMJST2D6N08HTXG

    Datenblatt

         		- 10-PowerLSOP (0.209", 5.30mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 28A (Ta), 131.5A (Tc) 10V 2.8mOhm @ 50A, 10V 4V @ 250µA 68 nC @ 10 V ±20V 4405 pF @ 40 V - 5.3W (Ta), 116W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 10-TCPAK
    IPB240N04S4R9ATMA1

    IPB240N04S4R9ATMA1

    MOSFET N-CH 40V 240A TO263-7

    Infineon Technologies

    		 943 -
    RFQ
    		IPB240N04S4R9ATMA1

    Datenblatt

         		OptiMOS™ TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 0.87mOhm @ 100A, 10V 4V @ 230µA 290 nC @ 10 V ±20V 23000 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-7-3
    STW8NK80Z

    STW8NK80Z

    MOSFET N-CH 800V 6.2A TO247-3

    STMicroelectronics

    		 618 -
    RFQ
    		STW8NK80Z

    Datenblatt

         		SuperMESH™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 6.2A (Tc) 10V 1.5Ohm @ 3.1A, 10V 4.5V @ 100µA 46 nC @ 10 V ±30V 1320 pF @ 25 V - 140W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    MCW240N10Y-BP

    MCW240N10Y-BP

    POWER MOSFET

    Micro Commercial Co

    		 293 -
    RFQ
    		MCW240N10Y-BP

    Datenblatt

         		- TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 240A (Tc) 10V 1.85mOhm @ 50A, 10V 4V @ 250µA 256 nC @ 10 V ±20V 16232 pF @ 50 V - 312.5W (Tj) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    MCTL295N06Y-TP

    MCTL295N06Y-TP

    N-CHANNEL MOSFET, TOLL-8L

    Micro Commercial Co

    		 3,895 -
    RFQ
    		MCTL295N06Y-TP

    Datenblatt

         		- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 295A (Tc) 6V, 10V 2mOhm @ 20A, 10V 4V @ 250µA 108 nC @ 10 V ±20V 8350 pF @ 30 V - 313W (Tj) -55°C ~ 150°C (TJ) - - Surface Mount TOLL-8L
    APT4F120S

    APT4F120S

    MOSFET N-CH 1200V 4A D3PAK

    Microchip Technology

    		 128 -
    RFQ
    		APT4F120S

    Datenblatt

         		POWER MOS 8™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active N-Channel MOSFET (Metal Oxide) 1200 V 4A (Tc) 10V 4.2Ohm @ 2A, 10V 5V @ 500µA 43 nC @ 10 V ±30V 1385 pF @ 25 V - 175W (Tc) - - - Surface Mount D3PAK
    IPTG018N08NM5ATMA1

    IPTG018N08NM5ATMA1

    TRENCH 40<-<100V PG-HSOG-8

    Infineon Technologies

    		 1,784 -
    RFQ
    		IPTG018N08NM5ATMA1

    Datenblatt

         		OptiMOS™ 8-PowerSMD, Gull Wing Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 32A (Ta), 253A (Tc) 6V, 10V 1.8mOhm @ 150A, 10V 3.8V @ 159µA 127 nC @ 10 V ±20V 9200 pF @ 40 V - 3.8W (Ta), 231W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOG-8-1
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