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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    IQD020N10NM5ATMA1

    IQD020N10NM5ATMA1

    TRENCH >=100V

    Infineon Technologies

    		 4,985 -
    RFQ
    		IQD020N10NM5ATMA1

    Datenblatt

         		OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 26A (Ta), 276A (Tc) 6V, 10V 2.05mOhm @ 50A, 10V 3.8V @ 159µA 134 nC @ 10 V ±20V 9500 pF @ 50 V - 3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSON-8-9
    IQD016N08NM5ATMA1

    IQD016N08NM5ATMA1

    TRENCH 40<-<100V

    Infineon Technologies

    		 4,978 -
    RFQ
    		IQD016N08NM5ATMA1

    Datenblatt

         		OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 31A (Ta), 323A (Tc) 6V, 10V 1.57mOhm @ 50A, 10V 3.8V @ 159µA 133 nC @ 10 V ±20V 9200 pF @ 40 V - 3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSON-8-9
    SIHB085N60EF-GE3

    SIHB085N60EF-GE3

    E SERIES POWER MOSFET WITH FAST

    Vishay Siliconix

    		 2,000 -
    RFQ
    		SIHB085N60EF-GE3

    Datenblatt

         		EF TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 600 V 34A (Tc) 10V 84mOhm @ 17A, 10V 5V @ 250µA 63 nC @ 10 V ±30V 2733 pF @ 100 V - 184W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    IPB65R150CFDAATMA1

    IPB65R150CFDAATMA1

    MOSFET N-CH 650V 22.4A D2PAK

    Infineon Technologies

    		 1,192 -
    RFQ
    		IPB65R150CFDAATMA1

    Datenblatt

         		CoolMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 22.4A (Tc) 10V 150mOhm @ 9.3A, 10V 4.5V @ 900µA 86 nC @ 10 V ±20V 2340 pF @ 100 V - 195.3W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-3
    IPW60R120C7XKSA1

    IPW60R120C7XKSA1

    MOSFET N-CH 600V 19A TO247-3

    Infineon Technologies

    		 210 -
    RFQ
    		IPW60R120C7XKSA1

    Datenblatt

         		CoolMOS™ C7 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 120mOhm @ 7.8A, 10V 4V @ 390µA 34 nC @ 10 V ±20V 1500 pF @ 400 V - 92W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-3
    FCPF190N65FL1-F154

    FCPF190N65FL1-F154

    MOSFET N-CH 650V 20.6A TO220F-3

    onsemi

    		 845 -
    RFQ
    		FCPF190N65FL1-F154

    Datenblatt

         		FRFET®, SuperFET® II TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 650 V 20.6A (Tc) - 190mOhm @ 10A, 10V 5V @ 2mA 78 nC @ 10 V ±20V 3055 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F-3
    IPDQ60R075CFD7XTMA1

    IPDQ60R075CFD7XTMA1

    HIGH POWER_NEW PG-HDSOP-22

    Infineon Technologies

    		 750 -
    RFQ
    		IPDQ60R075CFD7XTMA1

    Datenblatt

         		CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active - MOSFET (Metal Oxide) 600 V - - - - - - - - - - - - Surface Mount PG-HDSOP-22-1
    MCACLS330N04YAHE3-TP

    MCACLS330N04YAHE3-TP

    MOSFET N-CH 40 330A DFN5060-DSC

    Micro Commercial Co

    		 10,000 -
    RFQ

    -

    		 - 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 330A (Tc) 6V, 10V 1.1mOhm @ 75A, 10V 4V @ 250µA 115.9 nC @ 10 V ±20V 7349 pF @ 25 V - 263W (Tj) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN5060-DSC
    IGLR60R340D1XUMA1

    IGLR60R340D1XUMA1

    GAN HV

    Infineon Technologies

    		 4,842 -
    RFQ
    		IGLR60R340D1XUMA1

    Datenblatt

         		CoolGaN™ 8-PowerTDFN Tape & Reel (TR) Last Time Buy N-Channel GaNFET (Gallium Nitride) 600 V 8.2A (Tc) - - 1.6V @ 530µA - -10V 87.7 pF @ 400 V - 41.6W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-TSON-8-7
    NTMFS7D5N15MC

    NTMFS7D5N15MC

    PTNG 150V 7.4MOHM, POWERCLIP56

    onsemi

    		 2,855 -
    RFQ
    		NTMFS7D5N15MC

    Datenblatt

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 13.5A (Ta) 8V, 10V 7.9mOhm @ 54A, 10V 4.5V @ 295µA 46 nC @ 10 V ±20V 3835 pF @ 75 V - 3.3W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount 8-PQFN (5x6)
    IPB0401NM5SATMA1

    IPB0401NM5SATMA1

    TRENCH >=100V

    Infineon Technologies

    		 990 -
    RFQ

    -

    		 - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    SIHG155N60EF-GE3

    SIHG155N60EF-GE3

    EF SERIES POWER MOSFET WITH FAST

    Vishay Siliconix

    		 925 -
    RFQ
    		SIHG155N60EF-GE3

    Datenblatt

         		EF TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 149mOhm @ 2A, 10V 5V @ 250µA 38 nC @ 10 V ±20V 1465 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247AC
    WI61195TR

    WI61195TR

    POWER GAN IC 8X8 PDFN

    Wise-Integration

    		 2,495 -
    RFQ

    -

    		 - - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    IQD009N06NM5SCATMA1

    IQD009N06NM5SCATMA1

    OPTIMOS POWER MOSFETS 25 V - 150

    Infineon Technologies

    		 5,000 -
    RFQ
    		IQD009N06NM5SCATMA1

    Datenblatt

         		OptiMOS™ 5 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 42A (Ta), 445A (Tc) 6V, 10V 0.9mOhm @ 50A, 10V 3.3V @ 163µA 150 nC @ 10 V ±20V 12000 pF @ 30 V - 3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-WHSON-8-U02
    PSMN028N10NS2_R2_00201

    PSMN028N10NS2_R2_00201

    100V/ 2.8M / TOLL FOR INDUSTRAIL

    Panjit International Inc.

    		 1,980 -
    RFQ
    		PSMN028N10NS2_R2_00201

    Datenblatt

         		- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 240A 4.5V, 10V - - 65 nC @ 10 V ±20V - - - - - - Surface Mount TOLL
    NVMFS5C406NT1G

    NVMFS5C406NT1G

    MOSFET N-CH 40V 52A/353A 5DFN

    onsemi

    		 1,560 -
    RFQ
    		NVMFS5C406NT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 52A (Ta), 353A (Tc) 10V 0.8mOhm @ 50A, 10V 4V @ 280µA 110 nC @ 10 V ±20V 7288 pF @ 20 V - 3.9W (Ta), 179W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
    CCSPG1060N TR PBFREE

    CCSPG1060N TR PBFREE

    100V, 60A, N-CHANNEL CHIP SCALE

    Central Semiconductor Corp

    		 1,442 -
    RFQ
    		CCSPG1060N TR PBFREE

    Datenblatt

         		* 8-XFLGA, CSP Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 100 V 60A (Tc) 5V 5.5mOhm @ 25A, 5V 2.5V @ 9mA 9.2 nC @ 5 V +6V, -4V 1000 pF @ 50 V - 300W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount 8-CSP (3.5x2.13)
    RBA300N10EHPF-5UA02#GB0

    RBA300N10EHPF-5UA02#GB0

    100V-300A-N-CHANNEL MOSFET FOR H

    Renesas Electronics Corporation

    		 1,500 -
    RFQ
    		RBA300N10EHPF-5UA02#GB0

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    IQD063N15NM5ATMA1

    IQD063N15NM5ATMA1

    TRENCH >=100V

    Infineon Technologies

    		 4,872 -
    RFQ
    		IQD063N15NM5ATMA1

    Datenblatt

         		OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 14.1A (Ta), 148A (Tc) 8V, 10V 6.32mOhm @ 50A, 10V 4.6V @ 159µA 60 nC @ 10 V ±20V 4700 pF @ 75 V - 2.5W (Ta), 278W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TSON-8-9
    G3R350MT12J-TR

    G3R350MT12J-TR

    1200V 350M TO-263-7 G3R SIC MOSF

    GeneSiC Semiconductor

    		 623 -
    RFQ
    		G3R350MT12J-TR

    Datenblatt

         		G3R™, LoRing™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 10A (Tc) 15V, 18V 395mOhm @ 4A, 18V 2.7V @ 2mA 10 nC @ 15 V +22V, -10V 331 pF @ 800 V - 64W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
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