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    Startseite > Produkte  > Diskrete Halbleiterprodukte > Transistoren > FETs, MOSFETs > FETs, MOSFETs

    FETs, MOSFETs

    Hersteller Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket

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    FETs und MOSFETs

    TomatoElec liefert FETs und MOSFETs für Industrie, Automotive, Leistungssteuerung, Motorantriebe und allgemeine Elektronikanwendungen. Unsere Beschaffungsunterstützung umfasst Feldeffekttransistoren, Leistungs-MOSFETs und weitere häufig verwendete Halbleiterprodukte für Schalt- und Steuerungsanwendungen.

    Wir unterstützen flexible RFQ-Services für die Beschaffung von FETs und MOSFETs und helfen Kunden, ihre Einkaufseffizienz für reguläre Bedarfe, dringende Anforderungen und ausgewählte schwer beschaffbare Teile zu verbessern.

    Mit Zugang zu mehreren Versorgungskanälen möchte TomatoElec Kunden zuverlässige Unterstützung bei der Beschaffung von FETs und MOSFETs, schnelle Angebotsabgabe und weltweite Lieferung bieten.

    Foto Hersteller-Teilenr. Verfügbarkeit Preis Menge Datenblatt Serie Verpackung/Gehäuse Verpackung Produktstatus FET-Typ Technologie Drain-Source-Spannung (Vdss) Strom - Dauer-Drain (Id) @ 25 °C Antriebsspannung (Max Rds Ein, Min Rds Ein) Rds Ein (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate-Ladung (Qg) (Max) @ Vgs Vgs (Max) Eingangskapazität (Ciss) (Max) @ Vds FET-Funktion Leistungsverlust (Max) Betriebstemperatur Klasse Qualifizierung Montageart Lieferant Gerätepaket
    RBA300N10EANS-3UA02#GB0

    RBA300N10EANS-3UA02#GB0

    100V-300A-N-CHANNEL MOSFET FOR H

    Renesas Electronics Corporation

    		 1,955 -
    RFQ
    		RBA300N10EANS-3UA02#GB0

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    RJ1P07CBHTL1

    RJ1P07CBHTL1

    NCH 100V 70A, TO-263AB, POWER M

    Rohm Semiconductor

    		 800 -
    RFQ
    		RJ1P07CBHTL1

    Datenblatt

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 6V, 10V 5.1mOhm @ 70A, 10V 4V @ 1mA 73 nC @ 10 V ±20V 4650 pF @ 50 V - 135W (Tc) 150°C (TJ) - - Surface Mount TO-263AB
    NVMFS6H800NLWFT1G

    NVMFS6H800NLWFT1G

    MOSFET N-CH 80V 30A/224A 5DFN

    onsemi

    		 1,495 -
    RFQ
    		NVMFS6H800NLWFT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 30A (Ta), 224A (Tc) 4.5V, 10V 1.9mOhm @ 50A, 10V 2V @ 330µA 112 nC @ 10 V ±20V 6900 pF @ 40 V - 3.9W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 5-DFNW (4.9x5.9) (8-SOFL-WF)
    NVMFS5C410NWFAFT1G

    NVMFS5C410NWFAFT1G

    MOSFET N-CH 40V 46A/300A 5DFN

    onsemi

    		 1,355 -
    RFQ
    		NVMFS5C410NWFAFT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 46A (Ta), 300A (Tc) 10V 0.92mOhm @ 50A, 10V 3.5V @ 250µA 86 nC @ 10 V ±20V 6100 pF @ 25 V - 3.9W (Ta), 166W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 5-DFN (5x6) (8-SOFL)
    IPZ60R099C7XKSA1

    IPZ60R099C7XKSA1

    MOSFET N-CH 600V 22A TO247-4

    Infineon Technologies

    		 8,125 -
    RFQ
    		IPZ60R099C7XKSA1

    Datenblatt

         		CoolMOS™ C7 TO-247-4 Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 99mOhm @ 9.7A, 10V 4V @ 490µA 42 nC @ 10 V ±20V 1819 pF @ 400 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO247-4
    NVB099N65S3

    NVB099N65S3

    SF3 650V EASY 99MOHM D2PAK AUTO

    onsemi

    		 3,141 -
    RFQ
    		NVB099N65S3

    Datenblatt

         		SuperFET® III TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 99mOhm @ 15A, 10V 4.5V @ 740µA 61 nC @ 10 V ±30V 2480 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
    PJMP125N60FRC_T0_00601

    PJMP125N60FRC_T0_00601

    600V/ 125M / 30A/ SJ MOSFET WITH

    Panjit International Inc.

    		 2,000 -
    RFQ
    		PJMP125N60FRC_T0_00601

    Datenblatt

         		- - Tube Active - - - - - - - - - - - - - - - - -
    IPW65R150CFDAFKSA1

    IPW65R150CFDAFKSA1

    MOSFET N-CH 650V 22.4A TO247-3

    Infineon Technologies

    		 426 -
    RFQ
    		IPW65R150CFDAFKSA1

    Datenblatt

         		CoolMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 22.4A (Tc) 10V 150mOhm @ 9.3A, 10V 4.5V @ 900µA 86 nC @ 10 V ±20V 2340 pF @ 100 V - 195.3W (Tc) -40°C ~ 150°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-3
    SIHA25N60EFL-GE3

    SIHA25N60EFL-GE3

    N-CHANNEL 600V

    Vishay Siliconix

    		 987 -
    RFQ
    		SIHA25N60EFL-GE3

    Datenblatt

         		E TO-220-3 Full Pack Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 146mOhm @ 12.5A, 10V 5V @ 250µA 75 nC @ 10 V ±30V 2274 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
    SIHP25N60EFL-BE3

    SIHP25N60EFL-BE3

    N-CHANNEL 600V

    Vishay Siliconix

    		 897 -
    RFQ
    		SIHP25N60EFL-BE3

    Datenblatt

         		E TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 146mOhm @ 12.5A, 10V 5V @ 250µA 75 nC @ 10 V ±30V 2274 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    SIHP125N60EF-GE3

    SIHP125N60EF-GE3

    MOSFET N-CH 600V 25A TO220AB

    Vishay Siliconix

    		 976 -
    RFQ
    		SIHP125N60EF-GE3

    Datenblatt

         		EF TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 125mOhm @ 12A, 10V 5V @ 250µA 47 nC @ 10 V ±30V 1533 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
    AUIRF2804STRL7P

    AUIRF2804STRL7P

    MOSFET N-CH 40V 240A D2PAK

    Infineon Technologies

    		 3,076 -
    RFQ
    		AUIRF2804STRL7P

    Datenblatt

         		HEXFET® TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.6mOhm @ 160A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 6930 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK (7-Lead)
    PJMF125N60FRC_T0_00601

    PJMF125N60FRC_T0_00601

    600V/ 125M / 30A/ SJ MOSFET WITH

    Panjit International Inc.

    		 2,000 -
    RFQ
    		PJMF125N60FRC_T0_00601

    Datenblatt

         		- - Tube Active - - - - - - - - - - - - - - - - -
    IXFA36N30P3

    IXFA36N30P3

    MOSFET N-CH 300V 36A TO263AA

    Littelfuse Inc.

    		 164 -
    RFQ
    		IXFA36N30P3

    Datenblatt

         		HiPerFET™, Polar3™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 300 V 36A (Tc) 10V 110mOhm @ 18A, 10V 4.5V @ 250µA 30 nC @ 10 V ±20V 2040 pF @ 25 V - 347W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263AA (IXFA)
    IPBE65R115CFD7AATMA1

    IPBE65R115CFD7AATMA1

    AUTOMOTIVE_COOLMOS PG-TO263-7

    Infineon Technologies

    		 976 -
    RFQ
    		IPBE65R115CFD7AATMA1

    Datenblatt

         		CoolMOS™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 21A (Tc) 10V 115mOhm @ 9.7A, 10V 4.5V @ 490µA 41 nC @ 10 V ±20V 1950 pF @ 400 V - 114W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-TO263-7-11
    IPI041N12N3GAKSA1

    IPI041N12N3GAKSA1

    MOSFET N-CH 120V 120A TO262-3

    Infineon Technologies

    		 464 -
    RFQ
    		IPI041N12N3GAKSA1

    Datenblatt

         		OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 120 V 120A (Tc) 10V 4.1mOhm @ 100A, 10V 4V @ 270µA 211 nC @ 10 V ±20V 13800 pF @ 60 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
    TK25V60X5,LQ

    TK25V60X5,LQ

    PB-F POWER MOSFET TRANSISTOR DTM

    Toshiba Semiconductor and Storage

    		 2,488 -
    RFQ
    		TK25V60X5,LQ

    Datenblatt

         		DTMOSIV 4-VSFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Ta) 10V 150mOhm @ 7.5A, 10V 4.5V @ 1.2mA 60 nC @ 10 V ±30V 2400 pF @ 300 V - 180W (Tc) 150°C - - Surface Mount 4-DFN-EP (8x8)
    ISC037N13NM6ATMA1

    ISC037N13NM6ATMA1

    TRENCH >=100V

    Infineon Technologies

    		 4,654 -
    RFQ
    		ISC037N13NM6ATMA1

    Datenblatt

         		- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
    NVMFS5C406NLWFT1G

    NVMFS5C406NLWFT1G

    MOSFET N-CH 40V 53A/362A 5DFN

    onsemi

    		 1,402 -
    RFQ
    		NVMFS5C406NLWFT1G

    Datenblatt

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 53A (Ta), 362A (Tc) 4.5V, 10V 0.7mOhm @ 50A, 10V 2V @ 280µA 149 nC @ 10 V ±20V 9400 pF @ 20 V - 3.9W (Ta), 179W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
    AOK500V120X2

    AOK500V120X2

    1200V SILICON CARBIDE MOSFET

    Alpha & Omega Semiconductor Inc.

    		 238 -
    RFQ
    		AOK500V120X2

    Datenblatt

         		- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 6.3A (Tc) 15V 675mOhm @ 1.2A, 15V 3.5V @ 1.2mA 12 nC @ 15 V +15V, -5V 206 pF @ 800 V - 44W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247
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